专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明专利

JPS60189279A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS60189279A
公开(公告)日：1985-09-26
申请号：JP4365884
申请日：1984-03-07
申请人： Nec Corp
发明人： FURUSE TAKAO
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： PURPOSE:To suppress in a low degree the noise generated by a returned light without having a high frequency current superposed on a driving current by a method wherein a region where a fundamental mode alone will be waveguided and another region which allows the waveguide of a higher transverse mode are provided on the photo waveguide region formed in longitudinal direction of a resonator. CONSTITUTION:The Al0.12Ga0.88As layer 4 located on the constricted position of a layer 5 can be easily removed by performing an etching for several seconds using a chemical etchant and it is formed in the width same as that of an Al0.6Ga0.4As layer 5. Then, an N type Al0.4Ga0.6As layer 9, a P type Al0.35 Ga0.65As layer 10, and an N type Al0.4 Ga0.6As layer 11 are successively formed by performing the second crystal growing process. At this point, the growth of said N type Al0.4Ga0.7As layer 9 can be stopped when the upper side of the boundary surface of a GaAs substrate 1 and an N type Al0.4Ga0.6As layer 2 are brought to come in coincidence with each other, and the P type Al0.35Ga0.65As layer 10 which will be formed subsequently can also be stopped its growth when its upper face is coincided with the layer edge of the constiriction 8 formed at a mesa part. Then, a P type impurity diffusion layer 12 is formed by diffusing Zn and, besides, a P type ohmic electrode 13 and an N type ohmic electrode 14 are formed.
摘要翻译：目的：通过以下方法抑制由返回的光产生的不具有叠加在驱动电流上的高频电流的噪声的噪声，其中单独的基本波导的区域和允许波导较高的区域横向模式设置在谐振器的纵向方向上形成的光波导区域上。构成：位于层5收缩位置的Al0.12Ga0.88As层4可以通过使用化学蚀刻剂进行数秒的蚀刻而容易地除去，并且其形状与Al0.6Ga0的宽度相同。然后，通过进行第二晶体生长，依次形成N型Al0.4Ga0.6As层9，P型Al0.35Ga0.65As层10和N型Al0.4Ga0.6As层11 处理。此时，当GaAs衬底1和N型Al0.4Ga0.6As层2的边界面的上侧达到一致时，可以停止所述N型Al0.4Ga0.7As层9的生长并且随后将形成的P型Al0.35Ga0.65As层10当其上表面与形成在台面部分的形状8的层边缘重合时也可以停止其生长。然后，通过使Zn扩散形成P型杂质扩散层12，此外形成P型欧姆电极13和N型欧姆电极14。

62. 发明专利

JPS59210686A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS59210686A
公开(公告)日：1984-11-29
申请号：JP7849684
申请日：1984-04-20
申请人： Hitachi Ltd
发明人： DOI KOUNEN , HIRAO MOTONAO , NAKAMURA MICHIHARU , TSUJI SHINJI , MORI TAKAO
IPC分类号： H01L21/208 , H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： PURPOSE:To remove a crystal defect induced in a buried layer being in contact with a buffer layer in a laser device, and to manufacture a laser having excellent reproducibility by forming the buried layer in a crystal growth layer of a four-element composition. CONSTITUTION:A buffer layer 2, an active layer 3, a clad layer 4 and a cap layer 5 are grown on a semiconductor substrate 1 in succession through a slide epitaxial method. When forming the each layer 2-5, the composition of a solution is brought close to that of InP, and a grating constant matching with InP is used. Each layer 2-5 is formed as an InP buffer layer 2 in predetermined thickness, an active layer 3 of a four-element composition, an InP clad layer 4 and a cap layer 5 of the four-element composition by the composition of the solution, the layer 3 shall be of In0.74Ga0.26As0.57P0.43, and the layer 4 shall be of In0.84 Ga0.16As0.36P0.64. A first In0.99Ga0.01As0.02P0.98 buried layer 6, an N type InP second buried layer 7 and an In0.74Ga0.26As0.57P0.43 cap layer 8 are shaped through mesa etching, and crystal defects induced in the layers 6, 7 are prevented.
摘要翻译：目的：去除在与激光装置中的缓冲层接触的掩埋层中感应的晶体缺陷，并且通过在四元素组成的晶体生长层中形成掩埋层来制造具有优异再现性的激光。构成：缓冲层2，有源层3，覆盖层4和覆盖层5通过滑动外延法连续生长在半导体衬底1上。当形成每个层2-5时，溶液的组成接近于InP的组成，并且使用与InP匹配的光栅常数。每个层2-5通过溶液的组成形成为具有预定厚度的InP缓冲层2，四元素组合物的有源层3，四元素组合物的InP包覆层4和覆盖层5 ，层3应为In 0.74Ga0.26As0.57P0.43，第4层应为In 0.84 Ga 0.16 As 0.36 P 0.64。第一In0.99Ga0.01As0.02P0.98掩埋层6，N型InP第二掩埋层7和In0.74Ga0.26As0.57P0.43覆盖层8通过台面蚀刻成形，并且在层中引起晶体缺陷 6，7。

63. 发明专利

JPS59208884A Manufacture of buried method type semiconductor laser element 失效
标题翻译： BURIED方法类型半导体激光元件的制造
公开(公告)号：JPS59208884A
公开(公告)日：1984-11-27
申请号：JP8265183
申请日：1983-05-13
申请人： Hitachi Ltd
发明人： SHIGE NORIYUKI
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： PURPOSE:To improve the wetting property of solder at the time of mounting the titled element by flatterning the surface on the side of a multilayer structure by a method wherein a growth promoting layer wherein a GaAs layer grows also at the stripe part is previously provided on a P type clad layer, when the GaAs layer is grown by lamination on a buried layer. CONSTITUTION:An N type GaAlAs clad layer 5, a GaAs active layer 6, a P type Ga1-xAlxAs clad layer 7, and the Ga1-yAly As growth promoting layer 15 are laminated on a GaAs substrate 2. Many mesa etching grooves 16 are provided in parallel in the fixed direction, the P type GaAlAs buried layers 4 are grown, and a GaAs or Ga1-zAlzAs flattened layer 17 is grown. At this time, setting the mixed crystal ratio (y) of the Al of the growth promoting layer 15 at zero causes the buried layer 4 to grow on said layer 15, increasing the ratio (y) does not cause the flattened layer 17 on said layer 15, keeping the ratio (y) at approx. 0.01-0.2 causes said layer 17 also on said layer 15.
摘要翻译：目的：为了提高通过使多层结构侧的表面平坦化而使标题元件安装时的焊料的润湿性，其中，其中GaAs层也在条形部分生长的生长促进层预先设置在当GaAs层通过层叠在掩埋层上生长时，P型覆层。构成：在GaAs衬底2上层叠有N型GaAlAs覆盖层5，GaAs有源层6，P型Ga1-xAlxAs覆盖层7和Ga1-yAlyA生长促进层15，许多台面蚀刻槽16 在固定方向上并联设置，P型GaAlAs掩埋层4生长，并且生长GaAs或Ga1-zAlzAs平坦化层17。此时，将生长促进层15的Al的混晶比（y）设定为零，使得掩埋层4在所述层15上生长，增加比例（y）不会在所述层15上形成平坦化层17 层15，将比率（y）保持在约 0.01-0.2也使所述层17也在所述层15上。

64. 发明专利

JPS59181078A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS59181078A
公开(公告)日：1984-10-15
申请号：JP5411883
申请日：1983-03-30
申请人： Nec Corp
发明人： JINDOU MASAAKI , SAKUMA ISAMU
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/2275
摘要： PURPOSE:To improve the reproducibility in crystal growth by forming an active layer near the boundary between a GaAs substrate and a current narrowing layer in a groove, thereby enabling the crystalline growth with growing vessel having small oversaturation degree. CONSTITUTION:An AlGaAs layer 14, an AlGaAs layer 15 and a GaAs layer 16 are formed on a GaAs substrate 13. Then, a groove 17 which reaches the substrate 13 is formed, and an AlGaAs layer 18, an active layer 19, an AlGaAs layer 10, an AlGaAs layer 21 and a GaAs layer 22 are formed on the surface. Then, electrodes 23, 24 are formed. When thus formed, the active layer is formed near the substrate 13. Accordingly, the reproducibility in the position and the shape can be improved in the crystal growth.
摘要翻译：目的：通过在GaAs衬底和沟槽中的电流变窄层之间的边界附近形成有源层来提高晶体生长中的再现性，从而使生长容器的结晶生长过程具有较小的过饱和度。构成：在GaAs衬底13上形成AlGaAs层14，AlGaAs层15和GaAs层16.然后，形成到达衬底13的沟槽17，并且形成AlGaAs层18，有源层19，AlGaAs 层10，AlGaAs层21和GaAs层22形成在表面上。然后，形成电极23,24。当这样形成时，在基板13附近形成有源层。因此，可以提高晶体生长中的位置和形状的再现性。

65. 发明专利

JPS59175780A Buried-type semiconductor laser 失效
标题翻译： BURIED型半导体激光器
公开(公告)号：JPS59175780A
公开(公告)日：1984-10-04
申请号：JP4895683
申请日：1983-03-25
申请人： Hitachi Ltd
发明人： TODOROKI SATORU
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： PURPOSE:To prevent the deterioration on the buried boundary by etching a P type diffusion layer of the part including a boundary of a P type semiconductor light guiding layer and a buried layer to form an insulating protective film on the etched part. CONSTITUTION:On an N type InP substrate 1, an N type InP light guiding layer 2, an InGaAsP active layer 3 whose width of the forbidden band is smaller than that of said layer 2, a P type InP light guiding layer 4 and a cap layer 5 consisting of the same substance as that of the layer 3 or InGaAsP having the width of the forbidden band which is larger than that of the layer 3 and smaller than that of the layer 4, are laminated. Next, a stripe-form protective film is arranged on the layer 5 and mesa etching is made up to part of the layer 2 to form a buried layer 6 consisting of the same substance as that of the layer 2 or 4 or a P-N junction layer whose width of the forbidden band is larger than that of the layer 3. Next, the protective layer is removed and a P type diffusion layer 7 having the depth reaching part of the layer 4 through the layer 5 is formed. Subsequently, part of the layer 7 including a boundary of the layers 4 and 6 is removed by etching and an insulating protective film 8 is formed there and then electrodes 9 and 10 are arranged so as to prevent the deterioration on the buried interface.
摘要翻译：目的：通过蚀刻包含P型半导体光导层和埋层的边界的部分的P +型扩散层，在蚀刻部分上形成绝缘保护膜，以防止掩埋边界的劣化。构成：在N型InP基板1上，N型InP光导层2，禁带宽度小于所述层2的宽度的InGaAsP有源层3，P型InP导光层4和盖层叠由与第3层相同的物质构成的层5或具有比层3的宽度大于层3的宽度的禁带宽度的InGaAsP，并且层叠。接下来，在层5上布置条状保护膜，并且台面蚀刻被制成层2的一部分，以形成由与层2或4的物质相同的物质或PN结层其禁带的宽度大于层3的宽度。接下来，去除保护层，并且形成深度达到通过层5的层4的一部分的P +型扩散层7。随后，通过蚀刻去除包括层4和6的边界的层7的一部分，并且在其中形成绝缘保护膜8，然后布置电极9和10，以防止掩埋界面的劣化。

66. 发明专利

JPS59155980A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS59155980A
公开(公告)日：1984-09-05
申请号：JP3030683
申请日：1983-02-25
申请人： Nec Corp
发明人： UENO SHINSUKE
IPC分类号： H01S5/00 , H01S5/10 , H01S5/227
CPC分类号： H01S5/227 , H01S5/10 , H01S5/2275
摘要： PURPOSE:To make multiple optical oscillation possible subject to low threshold value and high efficiency by a method wherein the band gaps of each active layer on different plane regions separated by step difference in the central region of a resonator are differentiated. CONSTITUTION:An N type clad layer 12, an N type active layer 13 with high concentration, a P type guide layer 14 and an N type clad layer 15 are grown on an N type semiconductor substrate 10 provided with step difference in the central part of a resonator in the longitudinal direction and a recession near the reflecting surfaces of the resonator. At this time, the layer 13 is grown intermittently by the step difference in the central region and near both reflecting surfaces. Firstly the layer 13 is etched until it reaches the substrate 10 as a stripe with specific width in the longitudinal direction of the resonator. Secondly a buried layer 17 subject to electric insulation, refractive index lower than that of the layer 14 and high resistance is buried. Lastly an impurity with similar conductivity to that of the layer 14 is diffused to form P type layer 13 with its impurity compensated. Through these procedures, the band gaps of the layer 13 separated by the step difference may be differentiated to make two different wave length laser oscillation possible.
摘要翻译：目的：通过这样一种方法使得多个光振荡可能受到低阈值和高效率的影响，其中通过在谐振器的中心区域中被阶跃差分开的不同平面区域上的每个有源层的带隙被区分。构成：在具有高浓度的N型覆盖层12，N型有源层13，P型引导层14和N型覆盖层15的N型半导体基板10上生长，在纵向上的谐振器和在谐振器的反射表面附近的凹陷。此时，层13通过中央区域的台阶差并且在两个反射面附近间歇生长。首先，蚀刻层13，直到其到达基板10为条状，在谐振器的纵向具有特定的宽度。其次，进行电绝缘的掩埋层17，折射率低于层14的折射率和高电阻。最后，具有与层14相似的导电性的杂质被扩散以形成P型层13，其杂质被补偿。通过这些程序，可以将由阶梯差分开的层13的带隙区分开来，使两个不同的波长激光振荡成为可能。

67. 发明专利

JPS59130492A Semiconductor laser device and manufacture thereof 失效
标题翻译：半导体激光器件及其制造
公开(公告)号：JPS59130492A
公开(公告)日：1984-07-27
申请号：JP417583
申请日：1983-01-17
申请人： Hitachi Ltd
发明人： KOUNO TOSHIHIRO , OOTOSHI SOU , KAYANE NAOKI , KAJIMURA TAKASHI , NAKAMURA MICHIHARU
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227
CPC分类号： H01S5/32 , H01S5/2081 , H01S5/2275
摘要： PURPOSE:To contrive the stabilization of high output and transverse mode by a method wherein the first and fourth semiconductor layers are set smaller than the second and third semiconductor layers in refractive indices, and the refractive index of the third semiconductor layer is set larger than that of the second semiconductor layer, and the first and forth semiconducltors are so provided as to have conductivity types reverse to those of each, then, the forbidden band widths of the second and forth semiconductor layers are so set as to be larger than that of the third semiconductor layer at the same time. CONSTITUTION:A mesa stripe 12 is formed. At this time, mesa depth is made to reach a GaAs substrate in order to facilitate a burial growth thereafter. An active layer 4 exposed to the side surface of the stripe by selective etching is removed with H3PO4 series etchant, thus forming a cross-sectional structure. Next, the mesa stripe is filled with a P-Ga0.55Al0.45As layer 7 and an N-Ga0.55Al0.45As layer 8 by liquid epitaxial growth, and the selective diffusion 9 or entire surface diffusion of Zn is performed, afterwards ohmic electrodes 10 and 11 are formed.
摘要翻译：目的：通过其中第一和第四半导体层的折射率设定得小于第二和第三半导体层的方法来设计高输出和横向模式的稳定性，并且将第三半导体层的折射率设定为大于并且第一和第二半导体元件被设置为具有与之相反的导电类型，则第二和第二半导体层的禁带宽度被设定为大于第三半导体层。构成：形成台条12。此时，为了便于其后的埋藏生长，使台面深度达到GaAs衬底。通过选择性蚀刻暴露于条纹的侧表面的有源层4用H 3 PO 4系列蚀刻剂除去，从而形成横截面结构。接着，通过液体外延生长，用P-Ga0.55Al0.45As层7和N-Ga0.55Al0.45As层8填充台面条，进行选择扩散9或Zn的整个表面扩散，之后欧姆形成电极10和11。

68. 发明专利

JPS5925398B2 JPS5925398B2 - 失效
公开(公告)号：JPS5925398B2
公开(公告)日：1984-06-16
申请号：JP14905979
申请日：1979-11-14
申请人： Mitsubishi Electric Corp
发明人： MUROTANI TOSHIO , ISHII JUN , OOMURA ETSUJI
IPC分类号： H01L21/306 , H01L21/208 , H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275

69. 发明专利

JPS58216487A Buried structure semiconductor laser 失效
标题翻译： BURIED结构半导体激光器
公开(公告)号：JPS58216487A
公开(公告)日：1983-12-16
申请号：JP9881982
申请日：1982-06-09
申请人： Nec Corp
发明人： SUGIMOTO MITSUNORI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/227
CPC分类号： H01S5/0422 , H01S5/06203 , H01S5/2275
摘要： PURPOSE:To increase the maximum light output without saturation in current- optical output characteristics in a buried structure semiconductor laser surrounded by an active layer with a semiconductor layer having large forbidden band width by providing the first electrode formed on a region corresponding to direct above the active layer and the second electrode disposed at the isolated position. CONSTITUTION:A positive voltage is applied to a terminal 12 to implant a current i1 to an active layer 3, a voltage which is lower than the terminal 12 is applied to a terminal 14, and a current i2 is flowed from a P type electrode 10 to a P type electrode 11. The voltage which is applied to an InP homojunction 8 is highest in the vicinity of the layer 3 and becomes lower at the position farther than the active layer due to the voltage drop. Since only the voltage that is lower than the voltage which is applied to the layer 3 is always applied to the InP homojunction 8, the reactive current which flows through the junction 8 can be almost ignored and the current i1 can be almost implanted to the layer 3, a buried structure semiconductor laser which has large maximum output can be manufactured.
摘要翻译：目的：通过提供形成在对应于直接位于上方的区域上的第一电极，在由具有大禁带宽度的半导体层的有源层围绕的掩埋结构半导体激光器中增加电流 - 光输出特性中的最大光输出，有源层和设置在隔离位置的第二电极。构成：向端子12施加正电压以将电流i1注入有源层3，将低于端子12的电压施加到端子14，并且电流i2从P型电极10流出施加到InP均质结8的电压在层3附近是最高的，并且由于电压降而在比有源层更远的位置处变低。由于只有低于施加到层3的电压的电压总是施加到InP同质结8，所以流过结8的无功电流几乎可以被忽略，并且电流i1可以几乎被注入到层如图3所示，可以制造具有大的最大输出的掩埋结构半导体激光器。

70. 发明专利

JPS58194387A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS58194387A
公开(公告)日：1983-11-12
申请号：JP7617182
申请日：1982-05-07
申请人： Nec Corp
发明人： UENO SHINSUKE
IPC分类号： H01S5/00 , H01S5/10 , H01S5/16 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2237 , H01S5/2275 , H01S5/24
摘要： PURPOSE:To enable to perform a large optical output oscillation by a method wherein a multilayer structure having different refractive indexes is provided on a semiconductor having an energy gap smaller than that of the oscillating light, while a guide layer is thickly formed in the inner region of the shallow groove and thinly formed on the regions located at both sides, and a structure wherein a current is applied on the active layer of the shallow groove region is provided. CONSTITUTION:After an SiO2 film 11 has been formed on an N type GaAs substrate 10 having a plane surface (100), a window having the center part width of 3mum and the width of 10mum at both end face part is formed in direction , and then V-groove is formed by performing an etching. Then, after said SiO2 film 11 has been removed and an N type Al0.4Ga0.6As clad layer 12 has been grown, the shallow groove located at the center part is buried by an N type Al0.27Ga0.73As guide layer 13. Then, an undoped Al0.15Ga0.85As active layer 14 is grown. Besides, a P type Al0.4Ga0.6As clad layer 15 is grown in such a manner that the deep groove part will be buried. Subsequently, an N type Al0.02Ga0.98As cap layer 16 is grown. Then, after an SiO2 film 17 has been formed, Zn is diffused by providing a window on the region of the shallow groove, and the front is controlled in such a manner that it will be positioned at the midpoint of the Al0.4Ga0.6As clad layer, and then a P type ohmic contact 19 and an N type ohmic contact 20 are formed respectively, thereby enabling to have the oscillating light to rectilinearly proceed inside the P type clad layer in the vicinity of the end face.
摘要翻译：目的：为了能够通过在具有比振荡光的能隙小的能隙的半导体上设置具有不同折射率的多层结构的方法进行大的光输出振荡，同时在内部区域中厚地形成引导层并且在位于两侧的区域上薄地形成浅槽，并且提供其中在浅槽区域的有源层上施加电流的结构。构成：在具有平面（100）的N型GaAs衬底10上形成SiO 2膜11之后，在方向<110处形成在两端面部分具有3μm的中心部宽度和10μm的宽度的窗口 >，然后通过进行蚀刻形成V形槽。然后，在去除了所述SiO 2膜11并且生长了N型Al 0.4 Ga 0.6 As包层12之后，位于中心部分的浅槽被N型Al 0.27 Ga 0.7 As引导层13掩埋。然后，生长未掺杂的Al 0.15 Ga 0.85 As有源层14。此外，P型Al0.4Ga0.6As包覆层15以这样的方式生长，即深沟槽部分将被埋入。随后，生长N型Al0.02Ga0.98As覆盖层16。然后，在形成SiO 2膜17之后，通过在浅槽的区域上设置窗口来扩散Zn，并且前沿被控制为使其位于Al 0.4 Ga 0.6 As的中点然后分别形成P型欧姆接触19和N型欧姆接触20，从而能够使振荡光在端面附近的P型覆盖层内直线进行。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式