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61. 发明专利

JPS6177734A Driving method of semiconductor pressure sensor 失效
标题翻译：半导体压力传感器的驱动方法
公开(公告)号：JPS6177734A
公开(公告)日：1986-04-21
申请号：JP20008784
申请日：1984-09-25
申请人： Fujikura Ltd
发明人： OKADA KAZUHIRO , NURI KENJI
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06
CPC分类号： G01L9/06
摘要： PURPOSE:To make the effect of fluctuation in current conduction as small as possible, by applying a pulse current, whose amplitude is larger than that of a rated current, to gage resistors formed in a semiconductor diaphragm when a power source is turned ON. CONSTITUTION:Gage resistors 3a-3d are formed in a semiconductor diaphragm. A bridge circuit BR is constituted of the resistors 3a-3d. When a power source is turned ON, a large current flows to the circuit BR through a capacitor C15 and a variable resistor R2. The resistors 3a-3d are heated, and the temperature of the entire diaphragm is quickly increased to a specified temperature. When the charging of the C15 is finished, a rated current I is supplied to the circuit BR through a constant current circuit 14. Thus the effect of the fluctuation in current conduction can be made as small as possible with respect to the output of a sensor at output terminals 6a and 6b.
摘要翻译：目的：为了使导通波动的效果尽可能小，通过施加振幅大于额定电流的脉冲电流，在电源接通时，形成在半导体膜片中的电容器。规格：量规电阻器3a-3d形成在半导体膜片中。桥接电路BR由电阻器3a-3d构成。当电源接通时，大电流通过电容器C15和可变电阻器R2流向电路BR。电阻器3a-3d被加热，并且整个隔膜的温度快速地增加到指定的温度。当C15的充电结束时，通过恒流电路14向电路BR提供额定电流I.因此，可以使传导波动的影响尽可能地小于传感器的输出在输出端子6a和6b处。

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