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    • 61. 发明专利
    • Led lighting lamp
    • LED照明灯
    • JP2012129097A
    • 2012-07-05
    • JP2010280464
    • 2010-12-16
    • Denki Kagaku Kogyo Kk電気化学工業株式会社
    • KATO TAKANORIHARADA AKIO
    • F21V29/00F21S2/00F21Y101/02H01L33/64
    • PROBLEM TO BE SOLVED: To provide an LED lighting lamp with temperature at a light-emitting part low, brightness of LED illumination high, and, especially, with high thermal emittance.SOLUTION: The LED lighting lamp is provided with a resin-made LED lighting case 1 and a thermally conductive LED lighting substrate mounting base plate 2 with an LED lighting substrate 4 mounted. A contact area ratio which is an area ratio of a part of an upper surface of the resin-made LED lighting case 1 in contact with the LED lighting substrate mounting base plate 2 to an area of the upper surface of the lighting case 1 is to be 25% or more. A metal material is mounted along a heat dissipation surface 8 of the resin-made LED lighting case 1 to connect to the LED lighting substrate mounting base plate 2.
    • 要解决的问题:为了提供发光部分的温度低的LED照明灯,LED照明的亮度高,特别是具有高的热发射率。 解决方案:LED照明灯具有树脂制的LED照明盒1和安装有LED照明基板4的导热LED照明基板安装基板2。 将与LED照明基板安装基板2接触的树脂制LED发光体1的上表面的一部分的面积比与照明箱1的上表面的面积的面积比率为 为25%以上。 沿着树脂制的LED照明箱1的散热面8安装金属材料,以连接到LED照明基板安装基板2.(C)2012年,JPO&INPIT
    • 64. 发明专利
    • Ceramic circuit board and module using same
    • 陶瓷电路板和使用相同的模块
    • JP2012119519A
    • 2012-06-21
    • JP2010268510
    • 2010-12-01
    • Denki Kagaku Kogyo Kk電気化学工業株式会社
    • GOTO TAKESHITERADA MASUOOTSUKA TAKAHARU
    • H05K1/02H01L23/13H01L23/15
    • H01L2224/32225
    • PROBLEM TO BE SOLVED: To provide a ceramic circuit board on which a semiconductor is mounted and a module using it, of which thermal shock resistance is further improved.SOLUTION: A metal circuit 3 is provided on one surface of a ceramic board 1 while a metal heat radiation plate 4 is provided on the other surface. A thin-wall portion having a thickness d of 20-60% a total thickness D of the metal circuit 3 and a solder 2 is formed in a range of 0.3-2 mm from a semiconductor mounting region end part of the metal circuit 3. The thin-wall portion is formed as a groove or as a plurality of holes. In the case where it is formed as the groove, the width of the groove is 0.1-0.8 mm. In the case where it is formed as the plurality of holes, the diameter of the hole is 0.1-0.8 mm. By using the ceramic circuit board as having above stated characteristics, cracking at a solder layer and a metal circuit end part after a semiconductor element 5 is mounted is reduced.
    • 要解决的问题:提供一种其上安装有半导体的陶瓷电路板和使用该半导体的模块,其中进一步提高了耐热冲击性。 解决方案:金属电路3设置在陶瓷板1的一个表面上,而金属散热板4设置在另一个表面上。 在金属电路3的半导体安装区域端部的0.3〜2mm的范围内形成厚度d为金属电路3的总厚度D的20〜60%的薄壁部分和焊料2。 薄壁部形成为槽或多个孔。 在形成为槽的情况下,槽的宽度为0.1-0.8mm。 在形成为多个孔的情况下,孔的直径为0.1-0.8mm。 通过使用具有上述特征的陶瓷电路板,减少了在安装半导体元件5之后的焊料层和金属电路端部的开裂。 版权所有(C)2012,JPO&INPIT
    • 65. 发明专利
    • Aluminum-diamond composite and method for producing the same
    • 铝 - 金刚石复合材料及其制造方法
    • JP2012117085A
    • 2012-06-21
    • JP2010265088
    • 2010-11-29
    • Denki Kagaku Kogyo Kk電気化学工業株式会社
    • HIROTSURU HIDEKITSUKAMOTO HIDEOISHIHARA YOSUKE
    • C22C1/10B22D19/00C22C1/05C22C21/00C22C26/00C22C29/18C23C18/18C25D5/44C25D7/12H01L23/373
    • PROBLEM TO BE SOLVED: To provide an aluminum-diamond composite having both high thermal conductivity and a coefficient of thermal expansion near that of a semiconductor element and further improved in surface roughness of a surface and flatness so as to be suitable for use in a heat sink of a semiconductor element or the like.SOLUTION: The aluminum-diamond composite contains an aluminum-diamond composite material which includes metal containing 40-70 vol.% of a diamond particle and the remainder of aluminum, and is formed in a plate with a thickness of 0.4-6 mm or a plate having a recessed and projecting portion. Both main surfaces of the aluminum-diamond composite are coated with an aluminum-ceramic composite with a thickness of 0.05-0.5 mm, and the aluminum-diamond composite has a structure where the aluminum-diamond composite is exposed at a side face and a hole.
    • 要解决的问题:提供一种具有接近半导体元件的高导热率和热膨胀系数的铝 - 金刚石复合材料,并且进一步提高了表面的表面粗糙度和平坦度以便适合使用 在半导体元件等的散热器中。 解决方案:铝 - 金刚石复合材料包含铝 - 金刚石复合材料,其包括含有40-70体积%的金刚石颗粒和剩余的金属的金属,并且形成为厚度为0.4-6的板 mm或具有凹入和突出部分的板。 铝 - 金刚石复合材料的两个主表面涂覆有厚度为0.05-0.5mm的铝 - 陶瓷复合材料,并且铝 - 金刚石复合材料具有铝 - 金刚石复合材料在侧面和孔处露出的结构 。 版权所有(C)2012,JPO&INPIT
    • 68. 发明专利
    • Silicon carbide powder for producing silicon carbide single crystal, and production method therefor
    • 用于生产碳化硅单晶的碳化硅粉及其生产方法
    • JP2012101996A
    • 2012-05-31
    • JP2010254378
    • 2010-11-15
    • Denki Kagaku Kogyo KkNational Institute Of Advanced Industrial Science & Technology独立行政法人産業技術総合研究所電気化学工業株式会社
    • KATO TOMOHISATAKEDA YUSUKEMURATA HIROSHI
    • C01B31/36C30B29/36
    • C01B31/36C01B32/956C30B23/02C30B29/36C30B35/007Y10T428/2982
    • PROBLEM TO BE SOLVED: To provide silicon carbide powder exhibiting a high and stable sublimation speed during the growth of a single crystal by a sublimation recrystallization method, and a method for producing the same.SOLUTION: The silicon carbide powder for producing the silicon carbide single crystal has an average particle size of 100 μm or more to 700 μm or less, and a specific surface area of 0.05 m/g or more to 0.30 m/g or less, A particle form is preferably one sintered with primary particles having 5 μm or more to 200 μm or less of particle size. The method for producing the silicon carbide powder for producing the silicon carbide single crystal includes a process of pressurization-sintering the silicon carbide powder having 20 μm or less of average particle size, under the condition of non-oxidizing atmosphere where a temperature is 1,900°C or more to 2,400°C or less and where pressure is 70 MPa or less, and of obtaining thereby a sintered body having density of 1.29 g/cmor more; a grain size regulating process of regulating a grain size by pulverizing the obtained sintered body; and an impurity removing process of removing an impurity by acid treatment.
    • 待解决的问题:提供通过升华重结晶法在单晶生长期间表现出高且稳定的升华速度的碳化硅粉末及其制造方法。 解决方案:用于制造碳化硅单晶的碳化硅粉末的平均粒径为100μm以上至700μm以下,比表面积为0.05μm 2 < / SP> / g以上至0.30μm 2 / g以下,粒子形状优选为与粒径在5μm以上至200μm以下的一次粒子一起烧结的粒子 尺寸。 制造碳化硅单晶的碳化硅粉末的方法包括在温度为1900℃的非氧化性气氛的条件下对具有平均粒径为20μm以下的碳化硅粉末进行加压烧结的工序 ℃以上至2400℃以下,压力为70MPa以下,得到密度为1.29g / cm 3以上的烧结体。 通过粉碎所获得的烧结体来调节晶粒尺寸的晶粒尺寸调节过程; 以及通过酸处理去除杂质的杂质去除方法。 版权所有(C)2012,JPO&INPIT
    • 69. 发明专利
    • Resin and sheet
    • 树脂和片材
    • JP2012092197A
    • 2012-05-17
    • JP2010239507
    • 2010-10-26
    • Denki Kagaku Kogyo Kk電気化学工業株式会社
    • ARAI TORUMIYAMA AKIRA
    • C08F8/42C08F210/02C08F212/00C08F255/02C08J5/18H01L31/042
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide an industrially advantageous method for granting an efficient and stable adhesiveness of a hydrocarbon resin or its sheet to an inorganic material, for example, a glass plate, etc.; and to provide a resin or its sheet excellent in adhesiveness to an inorganic material, for example, a glass plate, etc.SOLUTION: By graft treatment of an amino group-containing silane coupling agent with a hydrocarbon resin in the presence of a radical initiator, the resin or its sheet excellent in adhesiveness to an inorganic material, especially to glass, is provided. The resin or its sheet is useful, for example, as a sealant of a photovoltaic generation equipment, a liquid crystal, an EL display, sealing of a luminescent device, and an adhesive resin.
    • 待解决的问题:为了提供烃树脂或其片材对无机材料例如玻璃板等的有效且稳定的粘附性的工业上有利的方法; 并且提供与无机材料(例如玻璃板)等的粘合性优异的树脂或其片材。解决方案:通过在烃存在下用烃树脂将含氨基的硅烷偶联剂接枝处理 提供自由基引发剂,与无机材料,特别是玻璃的粘合性优异的树脂或其片。 树脂或其片材例如可用作光伏发电设备,液晶,EL显示器,发光装置的密封和粘合树脂的密封剂。 版权所有(C)2012,JPO&INPIT
    • 70. 发明专利
    • Method for manufacturing aluminum-ceramic composite structural component
    • 制备铝 - 陶瓷复合结构组分的方法
    • JP2012091959A
    • 2012-05-17
    • JP2010240181
    • 2010-10-26
    • Denki Kagaku Kogyo Kk電気化学工業株式会社
    • HIROTSURU HIDEKITSUKAMOTO HIDEO
    • C04B41/88C04B41/80C04B41/91C22C1/10
    • PROBLEM TO BE SOLVED: To inexpensively provide, as a structural component for a semiconductor manufacturing device or the like, an aluminum-ceramic composite structural component applicable to a large component, which is low in thermal expansion and has stable characteristics such as heat conductivity.SOLUTION: A plate ceramic porous body is molded or processed into an outer peripheral shape larger than a product shape, a carbon molding having porosity of 10-40 vol.% is arranged on the outer periphery thereof, and an aluminum alloy mainly composed of aluminum is impregnated therein at pressure of 30 MPa or more to produce an aluminum-ceramic composite having an outer periphery composed of an aluminum-carbon composite. Thereafter, an aluminum alloy layer on the outer periphery of the composite is removed by grinding or the like, and the part of the aluminum-carbon composite is processed by machining or water-jet processing.
    • 要解决的问题:为了廉价地提供作为半导体制造装置等的结构部件的铝 - 陶瓷复合结构部件,其适用于热膨胀低且具有稳定特性的大型部件 导热系数。 解决方案:将板状陶瓷多孔体模制或加工成大于产品形状的外周形状,在其外周上布置具有10-40体积%的孔隙率的碳成型体,主要是铝合金 在30MPa以上的压力下浸渍铝,由此制成铝 - 碳复合体外周的铝 - 陶瓷复合体。 此后,通过研磨等除去复合材料外周上的铝合金层,并且通过机械加工或喷水处理来加工该部分的铝 - 碳复合材料。 版权所有(C)2012,JPO&INPIT