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    • 70. 发明专利
    • OXIDE SUPERCONDUCTOR FILM MATERIAL
    • JPH0337913A
    • 1991-02-19
    • JP17130289
    • 1989-07-04
    • ASAHI GLASS CO LTD
    • MORIMOTO TAKESHIMATSUBARA TOSHIYAOHASHI SHINICHI
    • C04B41/87C01G1/00C30B28/12C30B29/22H01B12/06H01L39/24
    • PURPOSE:To provide the material with a high critical current density by forming it on a substrate whose coefficient of thermal expansion is smaller than that of an oxide superconductor so that oxide supercondutor film makes a specific angle between the (c) axis of crystal and the surface of the substrate and that a crack vertical to the (c) axis is made with separation of less than 10mum over the whole surface of the film. CONSTITUTION:Oxide superconductor film is formed on a substrate whose coefficient of thermal expansion is smaller than that of an oxide superconductor such that an angle made between the (c) axis of crystal of the oxide supercon ductor film and the surface of the substrate is 0-45 deg., and that a crack vertical to (c) axis is made over the whole surface of the film with separation of less 10mum. That is, when film is formed with a specific orietation and a fine crack is made vertically to the (c) axis by the use of difference of thermal expansion between the substrate and the film, this crack works as an effective stop of pinning so that it is possible to control a movement of magnetic flux under the magnetic field; as a result, a high crytical current density can be indicated even in a condition where the magnetic field is applied.