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61. 发明专利

JPH05235485A 失效
公开(公告)号：JPH05235485A
公开(公告)日：1993-09-10
申请号：JP7264892
申请日：1992-02-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01L21/306 , H01S5/00 , H01S3/18
摘要： PURPOSE:To manufacture with a good reproducibility a ridge type semiconductor laser excelling in its laser characteristic and reliability. CONSTITUTION:Ge is used as an etching stopper layer 105. AlGaAs can be etched by an etchant (HCl), and Ge is largely resistant to the etchant (HCl). Therefore, a part of a second upper clad layer 106 made of AlGaAs is etched by the etchant (HCl) until reaching the etching stopper layer 105, and a ridge 110 is formed. Thereby, no oxide exists on the etching stopper layer, since no etching stop is performed by an oxidation, and the crystalline defects caused by oxides can be prevented from being generated in a renewedly growing layer.

62. 发明专利

JPH05152671A MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPH05152671A
公开(公告)日：1993-06-18
申请号：JP20397991
申请日：1991-07-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMISATO TAKESHI , TAKAHASHI SHOGO , ARIMOTO SATOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To facilitate the application to large space wafers for enhancing the operability, increasing the yield and reducing the process numbers by a method wherein the impurities are solid-diffused so as to disorder a natural superlattice. CONSTITUTION:Zn is diffused from a ZnO:SiO2 film 14 by solid diffusing step so as to disorder a natural superlattice of GaInP. Especially, a GaInP natural superlattice active layer 3 is formed so as to make Zn penetrate the diffusion front thereby enabling the regions 17 only to disorder the GaInP natural superlattice. Besides, in order to form a ridge after solid-diffusing step of Zn, an etching mask 6 used for the solid diffusion is used again as the etching mask for the ridge formation. Furthermore, in order to grow an n type GaAs layer after the ridge formation, the etching mask for the ridge formation is used for the growth selecting mask. Through these procedures, the operability can be enhanced for making the title semiconductor laser applicable to a large space wafers thereby enabling the yield to be increased while the process mumbers to be reduced.

63. 发明专利

JPH04303986A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH04303986A
公开(公告)日：1992-10-27
申请号：JP9348491
申请日：1991-03-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To easily and highly accurately form the ridge of an AlGaAs ridge waveguide type laser device. CONSTITUTION:The upper clad layer of a ridge waveguide type semiconductor laser device is constituted in a two-layer structure of the first upper clad layer 4b of p-type AlGaAs and second upper clad layer 4c of p-type AlGaInP. Since these two materials can be completely removed by selective etching, the ridge section of this laser device can be formed only etching the layer 4c to a ridge- like shape by using the layer 4b as an etching stopper.

64. 发明专利

JPH04199589A VISIBLE LIGHT PLANE EMISSION LASER DEVICE 失效
公开(公告)号：JPH04199589A
公开(公告)日：1992-07-20
申请号：JP33583190
申请日：1990-11-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/343
摘要： PURPOSE:To enable realization of a current constriction structure and a structure of confining generated light in an active layer by comprising an active layer of natural superlattice structure sandwiched by clad layers made of Al GaInP material where this active layer is made different in actual refractive index by impurity diffusion. CONSTITUTION:A GaAs substrate 1 is overlaid with an Al GaInP first clad layer 2, an undoped GaInP active layer 4 epitaxially grown under a condition accompanying a natural superlattice, and a double hetero structure made of an Al GaInP second clad layer reverse to the first clad layer 2 in conductivity. The device further comprises a region 8 with natural superlattice disordered formed by diffusing an impurity of conductivity reverse to that of the layer 5 from the side of the second clad layer 5 to a depth not reaching the first clad layer 2 with respect to a region other than the region counter to a groove 18 provided in the substrate 1, and the active layer 4 is made different in actual refractive index by impurity diffusion. This design can realize a current constriction structure and a structure of confining generated light in the active layer 4.

65. 发明专利

JPH04147688A MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04147688A
公开(公告)日：1992-05-21
申请号：JP27263490
申请日：1990-10-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To prevent generation of a barrier of a contact layer, a p-type GaAs layer by removing a dielectric film, further removing a cap layer with a predetermined selective etchant, and forming a contact layer made of second conductivity type semiconductor thereon over a second conductivity type GaAs semiconductor layer and a current block layer of the top of a ridge. CONSTITUTION:With a dielectric film 9 as a selective growth mask current block layers 7 made of n-type GaAs having 1.2mum of thickness are epitaxially grown at both sides of a ridge 12. Further, after the film 9 is removed, only a cap layer 11 is selectively removed by etching with hydrochloric acid etchant, and a p-type GaAs layer 6 and the layer 7 can remain. Eventually, a contact layer 8 made of p-type GaAs is epitaxially grown on the remaining layer thereby to complete a semiconductor laser. Since the layer 6 in contact with the layer 8 is not thermally deformed in the laser, a series resistance component for deteriorating laser characteristics does not exist between the layers 6 and 8 to obtain excellent ohmic characteristic.

66. 发明专利

JPH046889A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH046889A
公开(公告)日：1992-01-10
申请号：JP10960590
申请日：1990-04-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To get a high performance of buried semiconductor laser device by performing buried growth one time, without using a conventional mask for selective growth. CONSTITUTION:Each semiconductor layer 2-5b is formed in order on the surface (100) of an n-GaAs substrate 1, and a photoresist 10 is patterned in the direction of , and using proper etchant, a normal mesa stripe 7b is formed. At this time, the photoresist 10 is removed automatically, and the slant 11 of the normal mesa stripe 7b is exposed at (111) B face. Hereupon, by the MOCVD method, an n-GaAs block layer of 8b and a p-GaAs contact layer of 9b are epitaxially grown in order, whereby each layer is formed, thus a ridge buried layer can be obtained.

67. 发明专利

JPH0375295A BUBBLER FOR ORGANOMETALLIC MATERIAL 失效
公开(公告)号：JPH0375295A
公开(公告)日：1991-03-29
申请号：JP21172289
申请日：1989-08-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI , KAGEYAMA SHIGEMI
IPC分类号： C30B25/14 , C23C16/44 , C23C16/448 , H01L21/363
摘要： PURPOSE:To stably supply saturated vapor of an organometallic material even at an extremely low flow rate by bubbling a liquid organometallic material with a paddle wheel placed in a bubbler. CONSTITUTION:A liquid organometallic material 1 is bubbled with a paddle wheel 6 or 7 placed in a bubbler 5 and the evaporated material is supplied in the state of saturated vapor 4.

68. 发明专利

JPH01282503A FORMATION OF DIFFRACTION GRATING 失效
公开(公告)号：JPH01282503A
公开(公告)日：1989-11-14
申请号：JP11281488
申请日：1988-05-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA MASATOSHI , ARIMOTO SATOSHI
IPC分类号： G02B5/18 , G03C5/00 , G03F7/20 , G03F7/26
摘要： PURPOSE:To form the diffraction grating of uniform depth by forming interference fringes on photoresist applied to a semiconductor substrate and then forming oxide, and etching only the oxide and forming the diffraction grating. CONSTITUTION:The photoresist is applied on the semiconductor substrate 1 first and is exposed to an interference fringe pattern formed by exposure light sources 3. Then development is carried out and an oxide area 4 is formed of the oxide of the semiconductor substrate 1 by anode oxidation at a part where the photoresist 2 is absent. The oxide is etched lastly to form the diffraction grating. Consequently, the diffraction grating of uniform depth is formed without reference to whether a voice pattern of the photoresist is large or small.

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