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61. 发明专利

JPH09114097A PATTERN FORMING METHOD 失效
公开(公告)号：JPH09114097A
公开(公告)日：1997-05-02
申请号：JP30612396
申请日：1996-11-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , SASAKO MASARU
IPC分类号： G03F7/004 , G03F7/039 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To surly form a fine pattern which has improved adhesion property and a good shape and does not cause peeling of the film by including a process to form a film of a pattern forming material containing a specified sulfonyl compd. and a process to remove an exposed part in the film of the pattern forming material and to form a pattern having specified or smaller width. SOLUTION: This method includes a process to form a pattern forming film, a process to selectively expose the pattern forming material film to far UV rays, and a process to develop the pattern forming material film to remove the exposed part and form a pattern having

62. 发明专利

JPH0882933A PATTERN FORMING METHOD 失效
公开(公告)号：JPH0882933A
公开(公告)日：1996-03-26
申请号：JP25975495
申请日：1995-10-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , SASAKO MASARU
IPC分类号： G03F7/004 , G03F7/039 , G03F7/26 , H01L21/027
摘要： PURPOSE: To improve the adhesion property to a hydrophobic substrate by adding a component having hydrophilicity to a resin. CONSTITUTION: A resist thin film is formed on the semiconductor substrate 1 by using a pattern forming material 2 and spin coating the substrate with this material and is then soft-baked by a hot plate 3 to remove solvent in the thin film by evaporation and a pattern forming material thin film of thickness of 1.0μm is obtd. (a). Next, the thin film is exposed to a KrF excimer laser 4 via a mask 5 to photodecompose an acid generating agent 2 (b). Tertial butoxy groups are then brought into alkali soluble reaction by baking (PEB) (c). The exposed parts 2b of the pattern forming material 2 are dissolved away by development with an alkaline developer to obtain positive type patterns 2a, 2c (d). The fine patterns 2c of

63. 发明专利

JPH03223857A PATTERN FORMING METHOD 失效
公开(公告)号：JPH03223857A
公开(公告)日：1991-10-02
申请号：JP1952990
申请日：1990-01-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , SASAKO MASARU
IPC分类号： G03F7/039 , G03F7/09 , G03F7/26 , H01L21/027 , H01L21/30
摘要： PURPOSE:To surely form fine patterns which have a good shape and are free from film peeling by using a resin copolymerizing with components having a functional group which is soluble in alkalis in an acid atmosphere. CONSTITUTION:A pattern forming material film 2 contg. a resin having the functional group which is soluble in the alkalis in the acid atmosphere and a hydrophilic component, a photosensitive compd. which generates an acid by exposing, and a solvent which can dissolve the resin and compd. is formed on a substrate 1. The film material 2 is subjected to selective exposing with far UV rays, heat treatment and developing to form the patterns. The functional group of the resin receives a chemical change by an acid an becomes soluble in the alkalis when subjected to a heat treatment in succession to the exposing stage in this case. This functional group elutes into the developing soln. at the time of development. On the other hand, the acid is not generated in the unexposed parts and, therefore, the chemical change does not arise in spite of the heat treatment and there is no development of the alkaline soluble group. The patterns 2a, 2c of the positive type having a good contrast free from the film peeling are formed in this way.

64. 发明专利

JPH02126264A PATTERN FORMING METHOD 失效
公开(公告)号：JPH02126264A
公开(公告)日：1990-05-15
申请号：JP28078788
申请日：1988-11-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI , ENDO MASATAKA , SASAKO MASARU , TANI YOSHIYUKI
IPC分类号： G03F7/004 , G03F7/022 , G03F7/20 , G03F7/26 , G03F7/38 , H01L21/027
摘要： PURPOSE:To increase the aspect ratio of resist patterns by exposing a resist by using a 1st mask and insolubilizing the exposed part, then exposing the resist by using a 2nd mask reversed from the 1st mask, and developing the resist. CONSTITUTION:The positive resist 2 is formed on a substrate 1 consisting of a semiconductor, etc., and is exposed with UV rays 40 through the mask 3 to insolubilize the exposed part 20. The resist is then irradiated with the UV rays 41 by using the mask 6 reversed from the mask 3 so that the irradiated regions 21 are made soluble in an alkaline developing soln. The resist is then developed to obtain the resist patterns 2A. A wear of the film of the resist surface is suppressed according to this method and, therefore, the patterns having the good shapes are obtd.

65. 发明专利

JPH02125263A PATTERN FORMING METHOD 失效
公开(公告)号：JPH02125263A
公开(公告)日：1990-05-14
申请号：JP27869988
申请日：1988-11-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI , TANI YOSHIYUKI , ENDO MASATAKA
IPC分类号： G03F7/095 , G03F7/38 , H01L21/027
摘要： PURPOSE:To obtain a vertical resist pattern which has a small film loss and no taper by development by applying resist and processing the surface with a solution of a compound with a photosensitive radical. CONSTITUTION:A substrate 1 is coated with the resist 2, whose surface 20 is processed with the solution 3 of the compound with a sensing radical and made insoluble to a liquid developer; and the resist 20 is exposed selectively, and developed with the liquid developer to remove the exposed part of the resist 2, thereby forming a pattern 2A of the resist. Thus, the resist surface is processed with the solution of the compound with the sensing radical to bind the sensing radical with the resin or sensing radical in the resist, and the resist surface is made insoluble to eliminate the film reduction in the development of the resist at the unexposed part, thereby evading the pattern defect at a mask edge due to light diffraction. Consequently, the resist pattern is formed in an excellent shape.

66. 发明专利

JPH02118655A CONTRAST ENHANCING MATERIAL TO BE USED FOR FORMING PATTERN 失效
公开(公告)号：JPH02118655A
公开(公告)日：1990-05-02
申请号：JP27346388
申请日：1988-10-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , ENDO MASATAKA
IPC分类号： G03F7/095 , H01L21/027
摘要： PURPOSE:To obtain a pattern forming material having high reactivity for KrF excimer laser light, etc., and providing a fine pattern having sufficiently good shape of submicron order by constituting the material of a photosensitive compd. which generates sulfonic acid by exposure, a resin, and a solvent. CONSTITUTION:Diazo groups being weak to the effect of acids cause elimination reaction efficiently by the exposure with DUV rays, when a photosensitive compd. generating sulfonic acid which is a stronger acid than carboxylic acid. Accordingly, a photosensitive compd. generating sulfonic acid in accompany with elimination of diazo groups by the irradiation with DUV rays such as KrF excimer laser light, is used. When such photosensitive compd. is used as a photosensitive agent in a contrast enhancing material for DUV(particularly, for KrF excimer laser), the material exhibits high absorption before exposure, but the absorption decreases at high speed after exposure causing discoloration, so the enhancement of contrast of an exposure part to unexposed part is attained with a small degree of exposure. Thus, a fine pattern realizing an improvement of resolution is formed.

67. 发明专利

JPH02118652A PATTERN FORMING MATERIAL 失效
公开(公告)号：JPH02118652A
公开(公告)日：1990-05-02
申请号：JP27345188
申请日：1988-10-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ENDO MASATAKA , TANI YOSHIYUKI , SASAKO MASARU , NOMURA NOBORU
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , H01L21/027
摘要： PURPOSE:To obtain a pattern forming material capable of providing a resist pattern having high contrast, high resolution, with high precision for exposure to excimer laser light, etc. and development thereafter by constituting the material of a specified photosensitive cyclic body having a double bond, and a resin. CONSTITUTION:A compd. having a bond expressed by the formula I has a preferable characteristic of causing remarkable discoloration by the effect of excimer laser light. When a pattern is formed from a cyclic photosensitive body having a double bond, and contg. a bond expressed by the formula I, and a reactive group, and a resin, the double bond, etc. activates an electronic state in a molecule, which excites a bonding state in the molecule of alkali- soluble group(such as OH group) to hydrogen bond, etc. Suitable resin is styrene resin, phenol resin, etc. Thus, a pattern forming material capable of providing a superfine pattern having sufficiently good shape when it is used for exposure to KrF excimer laser, is obtd.

68. 发明专利

JPH02118649A POSITIVE PATTERN FORMING MATERIAL 失效
公开(公告)号：JPH02118649A
公开(公告)日：1990-05-02
申请号：JP27342888
申请日：1988-10-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , ENDO MASATAKA
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE:To obtain a positive pattern forming material having high photo- reactivity and being capable of providing easily a fine pattern of submicron order having sufficiently good shape by constituting the material of a specified positive photosensitive compd., a base resin, and a solvent. CONSTITUTION:The title positive pattern forming material is constituted of a positive photosensitive compd. having at least one group expressed by the formula I in a molecule (an -SO2Cl group, -SO3H group, -SO3CH3 group is pref. contained in the photosensitive compd. at its terminal), a resin, and a solvent capable of dissolving both of the photosensitive compd. and the resin. The solubility of the photosensitive compd. in an alkaline developing soln. is reduced by providing a long alkyl chain to its molecule. Accordingly, the dissolving velocity of unexposed part of the positive pattern forming material in an alkaline developing soln. contg. the photosensitive compd. is lessened generating great difference of dissolving velocity to that of an exposed part. Thus, a satisfactory resist pattern is obtd. By this constitution, a positive pattern forming material causing a great change of transmittance for excimer laser by the exposure thereto and providing submicron pattern having sufficiently good shape is obtd.

69. 发明专利

JPH02118646A RESIST CONTAINING PHOTOSENSITIVE COMPOUND 失效
公开(公告)号：JPH02118646A
公开(公告)日：1990-05-02
申请号：JP27341988
申请日：1988-10-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , ENDO MASATAKA , OGAWA KAZUFUMI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE:To obtain a resist having high photoreactivity for KrF excimer laser, far ultraviolet rays, etc. and being capable of providing a pattern having sufficiently good shape by incorporating a photosensitive compd. having at least one specified naphthalene ring in the molecule. CONSTITUTION:The title resist contains a photosensitive compd. having at least one bond expressed by the formula I and a naphthalene ring having at least 2 substituents in the molecule. The group expressed by the formula I has an absorption peak at near 248nm, and the height of the absorption peak becomes lower by the cleavage of the C-C bond by the effect of excimer laser, far ultraviolet rays, etc. When the resist is treated with an aq. alkali, only the part of the resist exposed to excimer laser light, etc. becomes soluble in alkali. As a result, a positive pattern is formed. Thus, a resist having high reactivity for KrF excimer laser light, etc. and being capable of forming easily fine pattern of submicron order and having a good shape is obtd.

70. 发明专利

JPH02106753A PATTERN FORMING METHOD 失效
公开(公告)号：JPH02106753A
公开(公告)日：1990-04-18
申请号：JP26004288
申请日：1988-10-14
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ENDO MASATAKA , TANI YOSHIYUKI , SASAKO MASARU , NOMURA NOBORU
IPC分类号： G03F7/008 , G03F1/76 , G03F7/012 , G03F7/016 , G03F7/021 , G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the sensitivity, the resolution and the shapeability of a resist pattern by forming a pattern by irradiating an alkaline-soluble resin film with ArF excimer laser rays. CONSTITUTION:A polymer solution 2 is applied on a substrate 1 of a semiconductor, etc., while rotating the substrate to form a pattern, and a resist 2 is pulse- likely and selectively exposed by the ArF excimer laser rays 4. Finally, the unexposed part 20 of the resist 2 is removed by being subjected the resist 2 to a usual alkali development processing to obtain a resist pattern 2a. Thus, the fine pattern which has a finer width than a short wavelength of the ArF excimer laser rays, is obtd., and the negative type pattern with good shapeability is formed by selectively exposing the ArF excimer laser rays on the resist pattern.

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