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61. 发明专利

JPH07122764A MANUFACTURE OF SOLAR BATTERY SUBSTRATE 失效
公开(公告)号：JPH07122764A
公开(公告)日：1995-05-12
申请号：JP26461293
申请日：1993-10-22
申请人： HITACHI LTD
发明人： MURAMATSU SHINICHI , WATANABE TAKESHI , TSUTSUI KEN , TAMURA KATSU
IPC分类号： H01L31/04 , H01L31/052
摘要： PURPOSE:To enhance the comfinement effect of the light impinged upon a solar battery and to form a homogenous thin film by a method wherein the part where a thin film solar battery will be formed is roughened, and the bottom of the thin film, in the thickness less than the average stepping of the roughned part, is ruggedly formed. CONSTITUTION:A diffused reflection surface 5 is formed on the surface of a glass substrate 3 using a sand-blasting method. Then, the surface of the substrate 3 is etched, and the defective layer generated by the sand-blasting is removed. Besides, spin-on-glass is applied on th diffused reflection surface 5 and heat-treatment is conducted. SiO2 10 is applied on the trough part only of the rugged surface. As the recesses and protrusions of the diffused reflection surface 5 are large, the diffused reflection light 2 is reflected at a small angle in left and right directions. As a result, when the light reached the surface again, most of it is reflected at a high reflectivity, or totally reflected, and reflected into the semiconductor thin film 4 again. As a result, light confinement rate can be increased. Also, no cracks are generated in the thin film in the abovementioned structure.

62. 发明专利

JPH06268240A THIN-FILM SOLAR CELL AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06268240A
公开(公告)日：1994-09-22
申请号：JP4895293
申请日：1993-03-10
申请人： HITACHI LTD
发明人： MURAMATSU SHINICHI , WATANABE TAKESHI , TSUTSUI KEN , TAMURA KATSU
IPC分类号： H01L31/04
摘要： PURPOSE:To provide a thin-film solar cell of high efficiency by a method wherein a-SiGe:H formed into an I-type layer of the solar cell is enhanced in quality. CONSTITUTION:A thin-film solar cell has such a structure that the I-type a-SiGe: H film of a thin film semiconductor junction composed of a P-type a-SiC:H film 3, an I-type a-SiGe:H film 4, and a fine crystal N film 5 is formed of non single crystal wherein Si and Ge have a concentration distribution in a depthwise direction, and furthermore B of III element has such a concentration distribution in the I-type a-SiGe:H film layer that it is maximal in concentration at a point where Ge reaches to its concentration peak.

63. 发明专利

JPH05197699A COMPUTER SYSTEM AND CONSTRUCTION CONTROL METHOD FOR COMPUTER SYSTEM 失效
公开(公告)号：JPH05197699A
公开(公告)日：1993-08-06
申请号：JP820992
申请日：1992-01-21
申请人： HITACHI LTD
发明人： YOSHIOKA SEIICHIROU , WATANABE TAKESHI , KITANO MASAHIRO , YAMADA TAKAFUMI , KINOSHITA TOSHIYUKI
IPC分类号： G06F9/00 , G06F11/20 , G06F13/14 , G06F15/16
摘要： PURPOSE:To improve the safety and reliability by preventing an operation mistake in the dynamic change of the device state. CONSTITUTION:In changing the dynamic change of the device state in program operation, an E latch 32 indicating the state permitting the signal connection and an A latch 33 indicating the signal connection state in a state holding control circuit. A signal 347 physically separating the device by operating the SVP console makes the E latch '0' in case of a signal disconnection state (A latch 33 is '0'). A signal 363 connecting the device by signal based on the instruction makes the A latch '1' in case of a signal connection enabling state (E latch 32 is '1').

64. 发明专利

JPH04324539A MONITOR CONTROLLER FOR MULTIPROCESSOR SYSTEM 失效
公开(公告)号：JPH04324539A
公开(公告)日：1992-11-13
申请号：JP9520091
申请日：1991-04-25
申请人： HITACHI LTD , HITACHI MICOM SYST KK
发明人： IKEGAYA NAOKO , UMENO HIDENORI , WATANABE TAKESHI , UEDA AKIHIRO
IPC分类号： G06F11/34 , G06F15/16 , G06F15/177
摘要： PURPOSE:To enable each processor to not only control the actuation of its corresponding hardware monitoring device, but also individually control the actuation of the hardware monitoring devices of other processors. CONSTITUTION:A hardware monitor control instruction executing means analyzes a hardware monitor control instruction containing the designation of one or more processors which actuate a hardware monitoring devices and hardware monitor control information and transfers the hardware monitor control information to the designated processors after extracting the designated processors (including parts). The hardware monitor control means of each processor controls its own hardware monitoring device on the basis of the hardware monitor control information upon receiving the information.

65. 发明专利

JPH02308331A MICROPROGRAM CONTROL METHOD 失效
公开(公告)号：JPH02308331A
公开(公告)日：1990-12-21
申请号：JP12882389
申请日：1989-05-24
申请人： HITACHI LTD
发明人： YOSHIOKA MASAICHIROU , WATANABE TAKESHI
IPC分类号： G06F9/22 , G06F9/46 , G06F9/48
摘要： PURPOSE:To simultaneously execute the processing of machine language instructions and another microprogram processing in parallel by switching and alternately executing a microprogram for the execution processing of machine language instructions and another microprogram processing. CONSTITUTION:If an interrupt factor 14 is caused by a background timer during execution of a machine language instruction B, this interrupt factor is accepted in a break 12b of processing whether the interrupt factor can be accepted in the instruction execution state or not, and the background timer interrupt control processing of the microprogram is started to interrupt the execution of a machine language instruction string, and microprogram processings X to Y are executed. When microprogram processings X to Y are executed up to a break 12c of processing, the processing of the machine language instruction string interrupted by the background timer interrupt is restarted, and the execution is started from a machine language instruction C following the interrupted machine language instruction B. Thus, the microprogram processing other than the processing of synchronous instructions can be executed.

66. 发明专利

JPH0283736A OSC DETECTION SYSTEM FOR BUFFER MEMORY CONTROLLER 失效
公开(公告)号：JPH0283736A
公开(公告)日：1990-03-23
申请号：JP23716488
申请日：1988-09-21
申请人： HITACHI LTD , HITACHI COMPUTER ENG
发明人： TANAKA ATSUSHI , WATANABE TAKESHI , WATABE YASUO , SATOU YUKA
IPC分类号： G06F9/38
摘要： PURPOSE:To avoid the excessive detection by detecting a fact that the operands read out based on the columns and rows of the buffer memories that convert the read and write addresses are changed by the preceding write operand. CONSTITUTION:A memory reading address is set to a reading virtual address register 10 serving as a buffer memory reading address register. The virtual address of the register 10 is inputted to a reading address conversion buffer 12 and converted into a real address. While a memory writing address is set to a writing virtual address register 20 and converted into a real address by a writing address conversion buffer 22. Then an OSC detecting part 30 detects that a read operand is changed by the preceding write operand based on the columns and rows of the buffer memories which are converted by the buffer address arrays 14 and 24. Thus the OSC of the buffer memory is detected with no excessive detection.

67. 发明专利

JPH01243032A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH01243032A
公开(公告)日：1989-09-27
申请号：JP6934288
申请日：1988-03-25
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , KENMOCHI AKIHIRO , MATSUZAKI EIJI , YORITOMI YOSHIFUMI , NAKATANI MITSUO
IPC分类号： G09F9/30 , G02F1/133 , G02F1/136 , G02F1/1368
摘要： PURPOSE:To improve resolution and yield by connecting the gate electrode and source electrode of a thin film transistor(TR) to a gate bus and a reference bus respectively, providing a picture element electrode opposite plural data buses in a straddling state and connecting the drain electrode to the picture element electrode. CONSTITUTION:A gate bus 4 selects a display line and connects the picture element electrode 8 formed of a transparent conductive film connected to the drain electrode 17 of the thin film TR electrically to a reference bus 6. When a display signal voltage is applied to a data bus 2 formed on an opposite substrate surface, a voltage is applied between the data bus 2 that the picture element electrode 8 straddles opposite and this picture element electrode 8 corresponding to the display signal voltage to change the array direction of liquid crystal, thereby making a display. Thus, a voltage can be applied between each opposite data bus 2 and the picture element electrode 8 independently by providing the picture element electrode 8 so that the electrode 8 faces and straddles the plural data buses 2. Namely, plural picture elements are driven by one thin film TR. Consequently, the resolution and yield are improved.

68. 发明专利

JPH01111876A THIN FILM FORMING DEVICE BY PLASMA TREATMENT 失效
公开(公告)号：JPH01111876A
公开(公告)日：1989-04-28
申请号：JP26810587
申请日：1987-10-26
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , TANAKA MASAHIRO , AZUMA KAZUFUMI , NAKATANI MITSUO , SONOBE TADASHI
IPC分类号： C23C16/50 , C23C16/511 , H01L21/205 , H01L21/31 , H01L21/363
摘要： PURPOSE:To uniformize a film forming speed by specifying the structure of a gas supply system of a titled device by an electron cyclotron resonance plasma treatment. CONSTITUTION:The microwaves generated by a magnetron 1 are guided by a waveguide 2 into a vacuum chamber 3. A discharge tube 4 is formed of quartz glass, etc., in order to allow the passage of the microwaves therethrough. A solenoid coil 5 is a magnetic field generating means for forming magnetic fields in the vacuum chamber 3. A sample substrate 6 is provided on a sample base 7 provided with a heating mechanism and the inside of the vacuum chamber 3 is evacuated through a discharge port 8. A discharge gas and a reaction gas are introduced respectively from introducing pipes 9, 10 into the vacuum chamber 3. The gas discharge part of the discharge gas introducing pipe 9 of such thin film forming device is formed into the toric structure having plural pieces of holes or slits so as to release the discharge gas in the arrow 91 direction of the discharge tube 4 to which the microwaves are supplied. The reaction gas discharge part of the reaction gas introducing pipe 10 is also made into the toric structure having plural pieces of holes or slits to release the reaction gas toward the substrate 6 surface in the arrow 101 direction.

69. 发明专利

JPH0192829A FLOATING POINT COMPUTING ELEMENT 失效
公开(公告)号：JPH0192829A
公开(公告)日：1989-04-12
申请号：JP24780187
申请日：1987-10-02
申请人： HITACHI LTD
发明人： WATANABE TAKESHI
IPC分类号： G06F7/00 , G06F7/02 , G06F9/32
摘要： PURPOSE:To quickly determine a condition code for a floating point instruction by directly comparing two input operands with each other to determine the condition code. CONSTITUTION:A code comparator 51 compares the codes of both operands to check whether operation is real addition or real subtraction and an exponent comparator 52 compares the exponents of both the codes to check their size relation. A mantissa comparator 53 decides the size relation of upper digits of both the operands and checks whether the mantissa part of each operand is all '0's or not and condition code forming part 54 forms a condition code corresponding to the kind of an instruction by using the compared result. A condition code selector 55 selects one of the condition codes corresponding to respective instructions formed by the circuit 54 based on condition code control information to determine the condition code. Consequently, a condition code determined by floating point operation can be quickly determined.

70. 发明专利

JPS6461907A FORMATION OF AMORPHOUS SEMICONDUCTOR ALLOY 失效
公开(公告)号：JPS6461907A
公开(公告)日：1989-03-08
申请号：JP21782587
申请日：1987-09-02
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , AZUMA KAZUFUMI , TANAKA MASAHIRO , NAKATANI MITSUO , SONOBE TADASHI
IPC分类号： H01L21/205 , H01L31/04
摘要： PURPOSE:To form an silicon group amorphous semiconductor alloy film having excellent photoconductive characteristics at high speed by utilizing electron cyclotron resonance plasma shaped by the interaction of a magnetic field and microwaves and alternately decomposing two kinds or more of raw material gases containing the constituent elements of the amorphous semiconductor alloy film with time. CONSTITUTION:SiH4 and GeH4 are fed alternatery from a gas introducing port 7 as raw material gases for film formation, and Ar gas is fed from a gas introducing port 6. Microwave frequency is brought to 2.45GHz, a microwave input to 100W and the temperature of a base body to 100-400 deg.C, and discharge gas pressure is brought to 3X10 -3X10 Torr. The distribution of a magnetic field is set so as to acquire maximally 1750G in the section of a discharge tube 4 and 875G (electron cyclotron resonance magnetic field intensity) at the exhaust side end section of the discharge tube 4. An amorphous silicon germanium alloy film at a bang gap of 1.5eV is obtained in not more than 2nm thickness of a thin layer under such conditions.

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