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61. 发明专利

JPS6060756A SOLID-STATE IMAGE PICKUP ELEMENT WITH MICROLENS AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6060756A
公开(公告)日：1985-04-08
申请号：JP16816683
申请日：1983-09-14
申请人： HITACHI LTD
发明人： NAKANO TOSHIO , TSUTSUI KEN , SASANO AKIRA , TSUKADA TOSHIHISA
IPC分类号： H01L27/14 , H01L31/0232
摘要： PURPOSE:To form a microlens array directly on a solid-state image pickup element by using a photolithographic method. CONSTITUTION:A lens fixing layer such as a polyglycidyl methacrylate layer 2 is formed on a solid-state image pickup element 3. A photoresist is applied on the layer 2 and exposed and developed to shape a pattern 1 just above a light- absorbing section 4. The pattern 1 is irradiated with ultraviolet rays, and deformed to a lens-shaped pattern 1' through heat treatment.

62. 发明专利

JPS59192208A Production of color filter 失效
标题翻译：彩色滤光片的制作
公开(公告)号：JPS59192208A
公开(公告)日：1984-10-31
申请号：JP3854184
申请日：1984-03-02
申请人： Hitachi Ltd
发明人： TANIGUCHI MORIO , NAKANO TOSHIO , KANEKO TADAO , TSUTSUI KEN , HASHIMOTO MICHIAKI , SASANO AKIRA , IZUMI AKIYA
IPC分类号： H04L9/22 , G02B5/20 , H01L27/14 , H04L9/38
CPC分类号： H01J9/233
摘要： PURPOSE:To obtain uniform color filter film by providing coating films of a high polymer compd. soluble in an org. solvent or a photosensitive material on a base plate or color filter, subjecting the films to a plasma treatment, forming a coating film of a water soluble photosensitive material thereon and patterning and dyeing said material. CONSTITUTION:Protective films 3-5 are provided by using a high polymer compd. soluble in an org. solvent or photosensitive material, for example, polyglycidyl methacrylate (PGMA), etc. on a base plate 1 or a color filter film 6 to be provided thereon and are then subjected to a plasma treatment. A coating film of a water soluble photosensitive material is thereafter provided thereon and is patterned and dyed. The protective films 2-4 are obtd. and the color filter films 6-8 are obtd. By repeating successively the above-mentioned operation. A protective film 5 is disposed on the uppermost layer. After the film 5 is formed in such a way, the film is subjected to a plasma treatment, by which the coating characteristic of the filter film is improved. The residual film rate is improved by adding a small amt. of water to a developing agent for the PGMA. The uniform and satisfactory color filter for a solid state image pickup element, etc. is thus obtd.
摘要翻译：目的：通过提供高分子化合物的涂膜来获得均匀的滤色膜。可溶于组织。溶剂或感光材料在基板或滤色器上进行等离子体处理，在其上形成水溶性感光材料的涂膜并对所述材料进行图案化和染色。构成：通过使用高分子化合物来提供保护膜3-5。可溶于组织。溶剂或感光材料，例如在基板1上的聚甲基丙烯酸缩水甘油酯（PGMA）等或其上提供的滤色器膜6，然后进行等离子体处理。然后在其上提供水溶性感光材料的涂膜并进行图案化和染色。保护膜2-4是可以得到的。滤色膜6〜8。通过重复上述操作。保护膜5设置在最上层。在以这种方式形成膜5之后，对膜进行等离子体处理，由此改善了过滤膜的涂布特性。通过添加小的amt来改善残留膜速率。的水用于PGMA的显影剂。因此，可以获得用于固态图像拾取元件等的均匀且令人满意的滤色器。

63. 发明专利

JPS59117277A Photo detector 失效
标题翻译：照片检测器
公开(公告)号：JPS59117277A
公开(公告)日：1984-07-06
申请号：JP22626182
申请日：1982-12-24
申请人： Hitachi Ltd , Nippon Telegr & Teleph Corp
发明人： SASANO AKIRA , NAKANO TOSHIO , TSUTSUI KEN , TSUKADA TOSHIHISA , TAJIRI TETSUO , OOTA HISAO
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/10
CPC分类号： H01L31/02164
摘要： PURPOSE:To improve optical characteristics without deteriorating electric characteristics of a photo detector and to simplify manufacturing processes, by patterning a light sensitive resin thin film, performing dying with a black dye, thereby forming a shielding film having a high accuracy in dimensions. CONSTITUTION:A transparent protecting film 10 comprising a laminated structure of Si3N4 and the like is formed on a transparent conducting film 12 by a CVD method and the like. A resin, wherein about 5% of a light sensitive agent such as ammonium bichromate is mixed with a water soluble macromolecular resin such as gelatine, is applied to the thickness of 0.5-5mum. Thereafter, exposure and development are performed by a photographic method, and a water soluble macromolecular resin pattern 101 is formed. The pattern is immersed in a black dye, e.g. aqueous solution of Suminol black or the like, and a black organic film pattern is formed. Then, a macromolecular resin film 102 such polyglycidyl methacrylate is applied. Then an epoxy bonding agent 13 is applied on the substrate and bonded to a thin glass plate 14. Thus a closely adhered line sensor is completed.
摘要翻译：目的：为了改善光学特性而不会劣化光电检测器的电特性并简化制造工艺，通过图案化感光树脂薄膜，用黑色染料进行染色，从而形成尺寸精度高的屏蔽膜。构成：通过CVD法等在透明导电膜12上形成由Si 3 N 4等构成的层叠结构的透明保护膜10。将其中约5％的光敏剂如重铬酸铵与水溶性大分子树脂如明胶混合的树脂以0.5-5μm的厚度施加。此后，通过照相法进行曝光和显影，并形成水溶性高分子树脂图案101。将图案浸入黑色染料中，例如苏米诺黑等水溶液，黑色有机膜图形。然后，使用高分子树脂膜102，如聚甲基丙烯酸缩水甘油酯。然后将环氧粘合剂13施加在基板上并结合到薄玻璃板14上。从而完成紧密粘接的线传感器。

64. 发明专利

JPS57207208A PRODUCTION OF COLOR FILTER 失效
公开(公告)号：JPS57207208A
公开(公告)日：1982-12-18
申请号：JP9230181
申请日：1981-06-17
申请人： HITACHI LTD
发明人： TSUTSUI KEN , NAKANO TOSHIO , HASHIMOTO MICHIAKI , SASANO AKIRA , TSUKADA TOSHIHISA
IPC分类号： H04N9/07 , G02B5/20 , G03C1/73 , G03F7/00
摘要： PURPOSE:To stabilize photosensitive characteristics and to provide sufficient adhesive power to backing by providing a stage of applying a heat treatment to a substrate after a stage of providing an org. high polymer thin film. CONSTITUTION:Photosensitive gelatin is coated on a transparent glass substrate 21, whereby a filter base material 22 is provided. An azide compd. is beforehand added to the material 22. The substrate 21 is heated treated to form a filter base material 23 adhered to the substrate 21 tightly. This is exposed by using a mask 24, and the material 23 is developed to form a patterned filter base material 25. This material 25 is baked to form a cured filter material 26, after which the material 26 is dyed, whereby a prescribed color filter 27 is obtained.

65. 发明专利

JPS56125711A MANUFACTURE FOR COLOR FILTER 失效
公开(公告)号：JPS56125711A
公开(公告)日：1981-10-02
申请号：JP2814880
申请日：1980-03-07
申请人： HITACHI LTD
发明人： HASHIMOTO MICHIAKI , NAKANO TOSHIO , SASANO AKIRA , KANEKO TADAO , TSUTSUI KEN , TANIGUCHI MORIO , IZUMI AKIYA
IPC分类号： G02B5/22 , G03F7/00 , H01L27/14
摘要： PURPOSE:To obtain the color filter having stable spectroscopic characteristics while preventing the decoloring of dye once dyed, by the pattern exposure to the photosensitive constituent on the substrate and further by development, dying and rinsing with volatile aqueous acid solution. CONSTITUTION:The coating film of photosensitive constituent is formed on the substrate, exposure and development are made via the mask for the specified pattern for pattern formation. Next, after this is dyed through immersion in an aqueous dye solution having suitable spectroscopic characteristics, and dye attached to the part other than the substrate and required pattern is removed by rinsing. In this case, rinsing is made for 2-3min by the aqueous solution of 0.01-5% volatile acid such as acetic acid, preferably 0.005-1%. Thus, the decoloring speed of dyed pattern can remarkably be reduced in comparison with the case of only water, and the change in the transmissivity rate of light is small and the filter with stable spectroscopic characteristic can be obtained.

66. 发明专利

JPS5564335A MANUFACTURING METHOD OF COLOR IMAGE PICKKUP LIGHT RECEIVING FACE 失效
公开(公告)号：JPS5564335A
公开(公告)日：1980-05-15
申请号：JP13680378
申请日：1978-11-08
申请人： HITACHI LTD , HITACHI ELECTRONICS
发明人： MATSUMARU HARUO , SASANO AKIRA , NAKANO TOSHIO , TSUTSUI KEN , MARUYAMA EIICHI
IPC分类号： H01J9/233 , H01L27/14
摘要： PURPOSE:To shorten the work time by employing a light hardening adhessives for adhering a color filter on the base, while to prevent the shift of position by eliminating the fixing zig. CONSTITUTION:Face board 1 is adhered to supporting board 3 through beeswax 2, then the supporting board 3 is fixed to the supporting base 9 of mask alighner. While color filter substrate 5 is adhered to supporting board 8 through beeswax 7 and fixed to the supporting tool 10 of mask alighner. The color filter is positioned by mask alighner in accordance with the transparent electrode, then ultra-violet hardening adhesives 11 is dripped and coated on the face board 1. Then the face board 1 and the filter face board 5 are contacted tightly by lowering the supporting tool 10, and irradiated with ultra-violet beam.

67. 发明专利

JPS52131418A SEPARATION OF INDIUMMSEALED STRUCTURE 失效
公开(公告)号：JPS52131418A
公开(公告)日：1977-11-04
申请号：JP4764376
申请日：1976-04-28
申请人： HITACHI ELECTRONICS , HITACHI LTD
发明人： SASANO AKIRA , MATSUMARU HARUO , TSUTSUI KEN , NAKANO TOSHIO , NISHIMURA TAKEO
IPC分类号： H01J31/46 , H01J29/02
摘要： PURPOSE:To realize perfect removal of indium from the plate surface using hydrochloric acid without causing any damage on the thin plate glass of pickup tube.

68. 发明专利

JPS5168198A Tomeidenkyokuseizohoho 失效
公开(公告)号：JPS5168198A
公开(公告)日：1976-06-12
申请号：JP14158774
申请日：1974-12-11
申请人： Hitachi Ltd
发明人： TANAKA YASUO , HIRAI TADAAKI , ISHIOKA YOSHIO , TSUTSUI KEN
IPC分类号： H05B33/28 , G09F9/30 , H01J9/02 , H01J9/233 , H01J17/04 , H05B33/12 , H05B33/26

69. 发明专利

JPS5128433A SATSUZOKANMENBAN NO SEISAKUHOHO 失效
公开(公告)号：JPS5128433A
公开(公告)日：1976-03-10
申请号：JP10087574
申请日：1974-09-04
申请人： HITACHI LTD , HITACHI ELECTRONICS
发明人： SASANO AKIRA , NAKANO TOSHIO , MATSUMARU HARUO , TSUTSUI KEN , NISHIMURA TAKEO , KOMURO YOSHUKI
IPC分类号： H01J9/233 , G02B5/20 , H01J29/02 , H01J31/46 , H04N9/07

70. 发明专利

JP2001223378A PHOTOELECTRIC GENERATING ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001223378A
公开(公告)日：2001-08-17
申请号：JP2000034338
申请日：2000-02-07
申请人： HITACHI LTD
发明人： TSUTSUI KEN , UEMATSU TSUYOSHI , OTSUKA HIROYUKI , YAZAWA YOSHIAKI , MIYAMURA YOSHINORI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric generating element wherein a surface- recombination generating region present between its electrode connection portion and a semiconductor layer having a different conduction type from its substrate is made small. SOLUTION: In the photoelectric generating element, on one surface of a semiconductor substrate 11, a first n+ diffusion layer 21 having a different conduction type from the substrate 11 is provided, and on the other surface of the substrate 11, a second n+ diffusion layer 21 having the different conduction type from the substrate 11 which has opening portions is provided, and further, the area of a protective film 31 provided on the second n+ diffusion layer 21 is made larger than the area of the second n+ diffusion layer 21, and moreover, at least a space portion is provided in the peripheral region of each opening portion and between the protective film 31 and the semiconductor substrate 11.

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