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61. 发明专利

JPS61260554A INSIDE REFORMING TYPE FUEL CELL 失效
公开(公告)号：JPS61260554A
公开(公告)日：1986-11-18
申请号：JP10135485
申请日：1985-05-15
申请人： HITACHI LTD
发明人： FUKUI HIROSHI , YOSHIOKA TAKATOSHI , HIYAMA KIYOSHI , YOSHIDA TAKEHIKO
IPC分类号： H01M8/02 , H01M8/06 , H01M8/14
摘要： PURPOSE:To make it possible to treat fuel gas uniformly as well as in plenty by providing catalyst on the interior surface of the fuel gas chamber of a separator substrate. CONSTITUTION:The interior surface of a fuel gas chamber is coated with Fe-group-Al alloy, Ni-group-Al alloy, Co-group-Al alloy and Pt-group-Al alloy by flame-coating method, and the under coating is still consisting of high aluminum content alloy before the development of aluminum by alkali or acid, and since the catalyst layer contains a small quantity of aluminum after the development of aluminum, the corrosion resistance against fuel gas is superior. On the other hand, the separator base material constituting the fuel chamber is made of excellent corrosion resistant materials such as the metal or alloy of Fe-group, Ni-group and Co-group because it comes into contact with fused carbonate and fuel gas, and these metal themselves are available to the catalyst, dependent upon the treatment of them. Therefore, when these materials are coated with aluminum by diffusion coating, the coating layers are made to alloy and intermetallic compound with aluminum to each other, and if the development of aluminum is performed by alkari or acid, the effect of the catalyst layer is obtained. It is suitable for a complicated seaparator structure because the diffusion of aluminum is used in this case especially.

62. 发明专利

JPS61229481A HIGH TEMPERATURE HIGH PRESSURE STEAM TURBINE AND ITS WELDING METHOD 失效
公开(公告)号：JPS61229481A
公开(公告)日：1986-10-13
申请号：JP6843585
申请日：1985-04-02
申请人： HITACHI LTD
发明人： YOSHIOKA TAKATOSHI , KIRIHARA SEISHIN , HIYAMA KIYOSHI , FUKUI HIROSHI , SHIGA MASAO , YOSHIDA TAKEHIKO , KANEKO RYOICHI , KOBAYASHI KAZU , KAWAKAMI MASAMI
IPC分类号： B23K9/23 , B23K9/00 , B23K9/235 , B23K31/00 , F01D25/26
摘要： PURPOSE:To enable the use of the steam of high temp. and high pressure by constituting the inner part casing and main steam pipe with austenitic stainless cast steel and by forming the structure of welding heat influence part in a fine recrystallized structure. CONSTITUTION:The welding of a main steam pipe becomes of the welding structure of austenitic stainless cast steel each other due to its being austenitic stainless cast steel. The whole face of the beveling surface on which welding heat is applied is first subjected to a plastic work in the execution of welding. The chisel peening method using the compressed air or shot peening method is preferable for the plastic work. The groove part is then subjected to build up welding 9 in about 2-5 layers after subjecting the beveling face to the plastic work. After the build up welding of the groove a joint welding 10 is executed. After the welding the annealing treatment for stress removel is executed at the prescribed temp. The structure of the welding heat affected zone being subjected to the peening treatment shows a fine recrystallized structure.

63. 发明专利

JPS61223144A MANUFACTURE OF ELECTRIC CONTACT POINT MATERIAL 失效
公开(公告)号：JPS61223144A
公开(公告)日：1986-10-03
申请号：JP6366485
申请日：1985-03-29
申请人： HITACHI LTD
发明人： WATANABE RYUJI , ANDO HISASHI , FUKUI HIROSHI , SHIMIZU SEIKI
IPC分类号： H01H11/04 , C22C1/04
摘要： PURPOSE:To obtain high m.p. uniform and gas free contact material, by heating and melting contact material which is difficult to manufacture by conventional melting method, under ultrahigh vacuum and gravity free state. CONSTITUTION:As gravity free field and ultrahigh vacuum field, cosmos space is taken up concretely, to manufacture contact point material in the space. For instance, refractory metal 9 fine powder and conductive metal 8 fine powder are mixed uniformly, then compacted, further the compact is heating treated in reducing gas atmosphere, to obtain presintered body 1. This is put in a refractory crucible 2, it is so contrived that these can be heated up to a prescribed melting temp. by an electric furnace 3. Such members 1-3 are set in a cosmos space 5 of space shuttle, then heating treated up to temp. Where the metals 8, 9 are melted. After confirming complete melting of both, these are solidified by stirring finely the crucible 2. Thereby, contact material free from segregation in which the metals 8, 9 are pptd. uniformly is obtd.

64. 发明专利

JPS61142772A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS61142772A
公开(公告)日：1986-06-30
申请号：JP26447584
申请日：1984-12-17
申请人： Hitachi Ltd
发明人： MATSUZAKI HITOSHI , HARADA EIJI , TOMITA SHIGEO , KIMURA ARATA , MIYAZAKI HIDEKI , FUKUI HIROSHI
IPC分类号： H01L29/74 , H01L21/331 , H01L29/423 , H01L29/73 , H01L29/744
CPC分类号： H01L29/744 , H01L29/42308
摘要： PURPOSE:To improve breaking capacity, by connecting a plurality of auxiliary gate electrodes, thereby improving the current balance between small capacity floating gate GTOs at the final stage of turnoff. CONSTITUTION:At the end part of each n-emitter layer 5 in the longitudinal direction, n-diffused layers 10 are provided on both sides of the n-emitter layer 5. Each layer 10 is separated from the layer 5. A driving gate electrode 3 is contacted to a p-base layer 6 at low resistance on one side of the n-emitter layer 5. An auxiliary gate electrode 11 is likewise contacted to the p-base layer 6 on the other side of the layer 5. An electrode 12 for connecting the auxiliary gate electrode is contacted to the upper main surface of each n-diffused layer 10 at low resistance. The electrodes 12 are connected to the auxiliary gate electrodes 11. Since the n-diffused layers 10 are diffused into the p-base layer, the sheet resistance of the p-base layer 6 at this part is high. The equivalent resistance is considerably high and serves the role of deflecting the current concentration part to the side of the auxiliary electrodes.
摘要翻译：目的：为了提高分断能力，通过连接多个辅助栅极电极，从而改善最终阶段的小容量浮栅GTO之间的电流平衡。构成：在每个n射极层5的纵向方向的末端部分，n扩散层10设置在n发射极层5的两侧。每个层10与层5分离。驱动栅电极 3在n射极层5的一侧以低电阻接触p基层6.辅助栅电极11同样与层5另一侧的p基层6接触。电极用于连接辅助栅极的电极12以低电阻接触每个n扩散层10的上主表面。电极12与辅助栅电极11连接。由于n扩散层10扩散到p基层中，所以p基层6在该部分的薄层电阻高。等效电阻相当高，并且起到将电流集中部分偏转到辅助电极侧的作用。

65. 发明专利

JPS61100019A Amplifier 失效
标题翻译：放大器
公开(公告)号：JPS61100019A
公开(公告)日：1986-05-19
申请号：JP22243284
申请日：1984-10-23
申请人： Hitachi Ltd
发明人： SATO MASAYOSHI , SAKAI KEIJIRO , MUTO NOBUYOSHI , FUKUI HIROSHI
IPC分类号： H03K5/01 , H03K5/125 , H03K17/04 , H03K17/567 , H03K17/691
CPC分类号： H03K17/691
摘要： PURPOSE:To decrease the delay time in a gate drive circuit output signal to a control signal by setting an FF circuit at the leading pulse of the control signal and resetting the circuit at the trailing pulse. CONSTITUTION:The control signal is fed to pulse transformers 27, 28 via the FF circuits 21, 22, an EX-OR circuit 25, AND circuits 23, 24 and FETs 25, 26. Thus, a pulse transformer 27 generates a pulse at the leading of the control signal and the pulse transformer 28 generates a pulse at the trailing of the control signal. Then the FF circuit comprising the FETs 2, 3 and resistors 6-11 is reset by an output pulse of the pulse transformer 27 and reset by the output pulse of the pulse transformer 28. The output of the FF circuit is given to a gate of the FET17 in such way. Thus, the delay time of the output signal of the gate drive circuit to the control signal is decreased.
摘要翻译：目的：通过将FF电路设置在控制信号的引导脉冲并在后续脉冲复位电路，将栅极驱动电路输出信号的延迟时间减少到控制信号。构成：控制信号通过FF电路21,22，EX-OR电路25，AND电路23,24和FET 25,26馈送到脉冲变压器27,28。因此，脉冲变压器27产生脉冲控制信号的前导和脉冲变压器28在控制信号的尾部产生脉冲。然后，由FET2,3和电阻器6-11构成的FF电路由脉冲变压器27的输出脉冲复位，并通过脉冲变压器28的输出脉冲进行复位。将FF电路的输出赋予 FET17以这种方式。因此，栅极驱动电路的输出信号对控制信号的延迟时间减小。

66. 发明专利

JPS60223320A HIGH VOLTAGE SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPS60223320A
公开(公告)日：1985-11-07
申请号：JP7852184
申请日：1984-04-20
申请人： HITACHI LTD
发明人： AMANO HISAO , TOKUNAGA KIICHI , FUKUI HIROSHI
IPC分类号： H03K17/10
摘要： PURPOSE:To simplify the circuit constitution and to reduce the cost by dividing semiconductor elements connected in series into plural groups, giving a drive signal only to a specific element and switching other remaining elements in response to the switching of the elements. CONSTITUTION:An optical signal of a signal generator 1 driving each module is led to an optoelectric converter 3 via an optical guide 2, the signal is amplified by an amplifier 4 so as to drive each module. Since each module is operated independently of other module by a given signal, a voltage-dividing capacitor C in each module is decided in response to a difference DELTAVoff of the voltage division when GTO(1), GTO(n) are turned off. That is, the series number is nXl, and since the voltage dividing capacitors depends on the (n), when the DELTAVoff is made constant, the capacitance value of the n-set series tracking drive is (n-1)/ (n.l-1), nearly 1/l in comparison with the value of n-set series tracking drive. Since the current interruption speed is nearly inversely proportional to the voltage dividing capacitor, it becomes also 1/l.

67. 发明专利

JPS6043671B2 JPS6043671B2 - 失效
公开(公告)号：JPS6043671B2
公开(公告)日：1985-09-30
申请号：JP67979
申请日：1979-01-10
申请人： Hitachi Ltd
发明人： KARYA TADAAKI , TOMITA SHIGEO , MORITA KEIICHI , FUKUI HIROSHI , TERASAWA YOSHIO
IPC分类号： H01L29/74 , H01L29/747
CPC分类号： H01L29/747

68. 发明专利

JPS60172819A SWITCH CIRCUIT 失效
公开(公告)号：JPS60172819A
公开(公告)日：1985-09-06
申请号：JP2710684
申请日：1984-02-17
申请人： HITACHI LTD
发明人： TOKUNAGA KIICHI , FUKUI HIROSHI , AMANO HISAO , SATOU MASAYOSHI , WATANABE KOUZOU
IPC分类号： H02M1/06 , H03K17/10 , H03K17/687 , H03K17/73
摘要： PURPOSE:To attain stable operation with low loss over a wide current region by providing a capacitor circuit playing a role of absorption of circuit energy at OFF state and of operation of drive energy supply at ON state to MOSFETs operated sequentially in series connection. CONSTITUTION:When a positive gate signal is applied to an MOSFET11, the 11 starts conduction, a capacitor 31 starts discharge and an MOSFET12 starts conduction. The MOSFETs 13-1n start conduction sequentially in the same way as the 12 and the switch circuit is turned on. The MOSFET11 keeps the ON state during the ON period even with a small voltage drop. This is the same as the 12 and preceding MOSFETs. Thus, even if lots of MOSFETs are connected in series, the voltage drop of the switch circuit at ON state is decreased sufficiently. When the application of a gate signal to the MOSFET11 is stopped, the MOSFET11 is interrupted and the drain current reaches 0. Thus, the current of the load circuit flows via the MOSFET12, a diode 61 and a capacitor 31, the current of the MOSFET12 is drawn at ON state and the MOSFET12 is cut off. The same way is applicable to the MOSFET13 and preceding FETs, and the circuit is turned off.

69. 发明专利

JPS6026460A OVERCURRENT PROTECTING CIRCUIT OF GATE TURN-OFF THYRISTOR 失效
公开(公告)号：JPS6026460A
公开(公告)日：1985-02-09
申请号：JP13103683
申请日：1983-07-20
申请人： HITACHI LTD
发明人： YAGINUMA TAKAO , FUKUI HIROSHI , KIMURA ARATA
IPC分类号： H02M1/06
摘要： PURPOSE:To obtain a protecting circuit of small size and low cost by detecting the overcurrent by the anode voltage of a GTO in an overcurrent protecting circuit of the GTO. CONSTITUTION:An overcurrent detecting circuit 20 of a GTO1 is formed of a comparator 5, and AND circuit 7, and a timer 8. The overcurrent protecting circuit of the GTO1 is composed of the circuit 20, and the anode voltage of the GTO1 and a reference voltage Vref for judging the overcurrent flowing state are compared by a comparator 5. The logic product of a firing signal generator 6 for outputting a high level signal only when the gate firing signal SON of the GTO1 is generated and the output of the comparator 5 is obtained by an AND circuit 7, and the output continuing time is measured by a timer 8. When the measured time reaches the prescribed time, it generates an OFF gate signal SOFF. An OFF gate current IOFF is supplied from an OFF gate controller 4 by the signal SOFF.

70. 发明专利

JPS6016171A OVERCURRENT PROTECTING CIRCUIT OF GATE TURN-OFF THYRISTOR 失效
公开(公告)号：JPS6016171A
公开(公告)日：1985-01-26
申请号：JP12335483
申请日：1983-07-08
申请人： HITACHI LTD
发明人： YAGINUMA TAKAO , FUKUI HIROSHI , KIMURA ARATA
IPC分类号： H02M1/06
摘要： PURPOSE:To protect a GTO against an overcurrent by a small-sized and inexpensive circuit by detecting the overcurrent by the state of the anode voltage of the GTO and flowing an OFF gate current to the GTO to extinguish it. CONSTITUTION:The anode voltage of a GTO is raised when the GTO generates an overcurrent, and the state of the prescribed level or higher is continued. When in this state (overcurrent state), a diode D2 is reversely biased, and a capacitor C1 is charged continuously. Therefore, the voltage of the capacitor C1 is raised, and when it reaches the prescribed level, a Zener diode D1 is conducted, and a transistor Tr1 is turned ON. Thus, an OFF gate current is flowed, and the GTO is turned OFF.

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