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51. 发明专利

JP2012114461A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2012114461A
公开(公告)日：2012-06-14
申请号：JP2012047996
申请日：2012-03-05
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , HONGO CHIE , NUNOUE SHINYA , ONOMURA MASAAKI
IPC分类号： H01S5/323 , H01L21/205 , H01L21/331 , H01L21/338 , H01L29/205 , H01L29/737 , H01L29/778 , H01L29/812 , H01L33/00 , H01L33/16 , H01L33/32
CPC分类号： H01L33/32 , C30B25/18 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/812 , H01L29/861 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To achieve a semiconductor substrate with improved flatness of each semiconductor layer that is crystal-grown on a GaN substrate and to provide a semiconductor light-emitting element with high-performance characteristics based on the semiconductor substrate.SOLUTION: A semiconductor light-emitting element comprises: a p-side electrode 32; an n-side electrode 31; a p-type stacked structure (16 to 20) that is connected to the p-side electrode 32 and is composed of a plurality of p-type nitride-based group III-V compound semiconductors; an n-type stacked structure (11 to 14) that is connected to the n-side electrode 31 and is composed of a plurality of n-type nitride-based group III-V compound semiconductors; and an active layer 15 that is formed between the p-type stacked structure (16 to 20) and the n-type stacked structure (11 to 14), and is composed of a nitride-based group III-V compound semiconductor. The n-type stacked structure (11 to 14) includes a dope layer 10 containing Si with a concentration from 5x10cmor more to 2x10cmor less and having a thickness from 0.3 nm or more to 200 nm or less, and a superlattice layer 13 provided closer to the active layer 15 side than to the dope layer 10.
摘要翻译：要解决的问题：为了实现在GaN衬底上晶体生长的每个半导体层的平坦度提高的半导体衬底，并提供基于半导体衬底的具有高性能特性的半导体发光元件。解决方案：半导体发光元件包括：p侧电极32; n侧电极31; 与p侧电极32连接并由多个p型氮化物系III-V族化合物半导体构成的p型层叠结构体（16〜20）与n侧电极31连接并由多个n型氮化物系III-V族化合物半导体构成的n型层叠结构体（11〜14）以及形成在p型堆叠结构（16〜20）和n型层叠结构（11〜14）之间的有源层15，由氮化物系III-V族化合物半导体构成。 n型堆叠结构（11〜14）包括浓度为5×10 -6 /秒的Si的掺杂层10。 >或更大，至少为0.3nm以上至200nm以下的2×10 6个以上，以及设置在与有源层15侧相比更接近于掺杂层10的超晶格层13.权利要求：（C）2012，JPO＆INPIT

52. 发明专利

JP2012114328A Optical semiconductor element 有权
标题翻译：光学半导体元件
公开(公告)号：JP2012114328A
公开(公告)日：2012-06-14
申请号：JP2010263448
申请日：2010-11-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIODA MICHIYA , YOSHIDA GAKUSHI , TACHIBANA KOICHI , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/205 , H01S5/343
CPC分类号： H01L33/06 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor element with high efficiency.SOLUTION: An optical semiconductor element comprises: an n-type semiconductor layer; a p-type semiconductor layer; a functional portion provided between the n-type semiconductor layer and the p-type semiconductor layer. The functional portion includes a plurality of active layers laminated in a direction toward the p-type semiconductor layer from the n-type semiconductor layer. At least two of the plurality of active layers each include a multilayered laminate, an n-side barrier layer, a well layer, and a p-side barrier layer. The multilayered laminate includes a plurality of thick film layers and a plurality of thin film layers having a thickness less than that of the thick film layers, which are alternately laminated in the direction. The n-side barrier layer is provided between the multilayered laminate and the p-type semiconductor layer. The well layer is provided between the n-side barrier layer and the p-type semiconductor layer. The p-side barrier layer is provided between the well layer and the p-type semiconductor layer.
摘要翻译：要解决的问题：提供高效率的光学半导体元件。解决方案：光学半导体元件包括：n型半导体层; p型半导体层; 设置在n型半导体层和p型半导体层之间的功能部。功能部分包括从n型半导体层朝向p型半导体层的方向层叠的多个有源层。多个活性层中的至少两个各自包括多层层压体，n侧阻挡层，阱层和p侧阻挡层。多层层压体包括多个厚膜层和多个薄膜层，其厚度小于厚膜层的厚度，其沿该方向交替层叠。 n侧阻挡层设置在多层叠层和p型半导体层之间。阱层设置在n侧势垒层和p型半导体层之间。 p侧阻挡层设置在阱层和p型半导体层之间。版权所有（C）2012，JPO＆INPIT

53. 发明专利

JP2012060172A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2012060172A
公开(公告)日：2012-03-22
申请号：JP2011276729
申请日：2011-12-19
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAKO HAJIME , HIKOSAKA TOSHITERU , KIMURA SHIGEYA , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency.SOLUTION: A semiconductor light-emitting element comprises: an n-type semiconductor layer including an n-type GaN layer; an n-side electrode connected to the n-type semiconductor layer; a p-type semiconductor layer including a p-type GaN layer and a p-type GaN contact layer stacked on the p-type GaN layer; a p-side electrode connected to the p-type semiconductor layer; a light-emitting portion that is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a plurality of well layers; a first layer having a thickness of 0.5 to 5 nm that is provided between the light-emitting portion and the p-type semiconductor layer and includes AlGaN having a first Al composition ratio of 0.001 to 0.05; a second layer that is provided between the first layer and the p-type semiconductor layer and includes AlGaN having a second Al composition ration of 0.1 to 0.2; and an intermediate layer having a thickness of 3 to 8 nm that contacts a p-type well layer nearest the p-type semiconductor layer in between the first layer and the light-emitting portion, includes InGaN (0≤z1
摘要翻译：要解决的问题：提供具有高发光效率的半导体发光元件。解决方案：半导体发光元件包括：n型半导体层，包括n型GaN层; 连接到n型半导体层的n侧电极; 包含层叠在p型GaN层上的p型GaN层和p型GaN接触层的p型半导体层; 连接到p型半导体层的p侧电极; 所述发光部分设置在所述n型半导体层和所述p型半导体层之间并且包括多个阱层; 设置在所述发光部和所述p型半导体层之间的厚度为0.5〜5nm的第一层，并且具有第一Al组成比为0.001〜0.05的AlGaN; 第二层，设置在第一层和p型半导体层之间，并且包括具有0.1至0.2的第二Al组成比的AlGaN; 以及与第一层和发光部之间最接近p型半导体层的p型阱层接触的厚度为3〜8nm的中间层，包括In z1 ＆lt; / SB＆gt;＆lt; SB POS =“POST”> 1-z1 N（0≤z1<1），并且具有比第一层高的p型杂质浓度。版权所有（C）2012，JPO＆INPIT

54. 发明专利

JP2012044231A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2012044231A
公开(公告)日：2012-03-01
申请号：JP2011262608
申请日：2011-11-30
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO TOSHIHIDE , TACHIBANA KOICHI , NUNOUE SHINYA
IPC分类号： H01L33/42
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element using an ITON layer as a transparent conductor and achieving low drive voltage, high luminous efficiency, and uniformed luminous intensity distribution.SOLUTION: A semiconductor light emitting element comprises: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and having an uppermost part composed of a p-type GaN layer; an ITON (indium-tin-oxynitride) layer formed on the p-type GaN layer; an ITO (indium-tin-oxide) layer formed on the ITON layer; a first metal electrode formed on a part of the ITO layer; and a second metal electrode formed to be connected with the n-type semiconductor layer.
摘要翻译：要解决的问题：提供使用ITON层作为透明导体并实现低驱动电压，高发光效率和均匀的发光强度分布的半导体发光元件。解决方案：半导体发光元件包括：基板; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 形成在有源层上并具有由p型GaN层构成的最上部的p型半导体层; 形成在p型GaN层上的ITON（铟 - 锡 - 氮氧化物）层; 形成在ITON层上的ITO（铟锡氧化物）层; 形成在ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层连接的第二金属电极。版权所有（C）2012，JPO＆INPIT

55. 发明专利

JP2012043893A Semiconductor light-emitting element and manufacturing method of the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012043893A
公开(公告)日：2012-03-01
申请号：JP2010182379
申请日：2010-08-17
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO TOSHIHIDE , OKA TOSHIYUKI , ZAIMA KOTARO , SATO TAISUKE , NUNOUE SHINYA
IPC分类号： H01L33/14
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high performance and a manufacturing method of the same.SOLUTION: The semiconductor light-emitting element of the present embodiment comprises: a laminate structure; a first electrode; a second electrode; a high resistance layer; and a transparent conductive layer. The laminate structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second inductivity type and a luminescent layer provided therebetween. The first electrode is provided on the first semiconductor layer on the side opposite to the second semiconductor layer. The second electrode is provided on the second semiconductor layer on the side opposite to the first semiconductor layer and has reflectivity. The high resistance layer contacts the second semiconductor layer between the second semiconductor layer and the second electrode and has a portion overlapping the first electrode viewed along a direction from the first semiconductor layer to the second semiconductor layer, and has resistance higher than that of the second semiconductor layer. The transparent conductive layer contacts the second semiconductor layer between the second conductive layer and the second electrode. The transparent conductive layer has permeability and has a refraction index lower than that of the second semiconductor layer and resistance lower than that of the high resistance layer.
摘要翻译：要解决的问题：提供一种具有高性能的半导体发光元件及其制造方法。解决方案：本实施例的半导体发光元件包括：层叠结构; 第一电极; 第二电极; 高电阻层; 和透明导电层。层叠结构包括第一导电类型的第一半导体层，第二电感型的第二半导体层和设置在其间的发光层。第一电极设置在与第二半导体层相反的一侧的第一半导体层上。第二电极设置在与第一半导体层相对的一侧上的第二半导体层上，并具有反射率。高电阻层与第二半导体层和第二电极之间的第二半导体层接触，并且具有与从第一半导体层到第二半导体层的方向观察的与第一电极重叠的部分，并且具有比第二半导体层的电阻高的电阻半导体层。透明导电层在第二导电层和第二电极之间接触第二半导体层。透明导电层具有导电性，折射率低于第二半导体层，折射率低于高电阻层。版权所有（C）2012，JPO＆INPIT

56. 发明专利

JP2012038950A Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2012038950A
公开(公告)日：2012-02-23
申请号：JP2010178405
申请日：2010-08-09
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO TAISUKE , OKA TOSHIYUKI , TACHIBANA KOICHI , NUNOUE SHINYA
IPC分类号： H01L33/38 , H01L33/32
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2224/29083 , H01L2224/29099 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having high bondability and the high efficiency, and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device comprises a stacked structure, a first conductive layer, a second conductive layer, and a third conductive layer. The stacked structure includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first conductive layer is provided at the side of the second semiconductor layer opposite to the side at which the first semiconductor layer is provided, and has transparency to emission light emitted from the light-emitting layer. The second conductive layer contacts a first primary surface of the first conductive layer opposite to the surface on which the second semiconductor layer is provided. The third conductive layer contacts the first primary surface, and has a higher reflectance for the emission light than that of the second conductive layer. The third conductive layer includes an extension portion in which at least the portion is not covered with the second conductive layer and extends in parallel with the first primary surface.
摘要翻译：要解决的问题：提供一种具有高粘合性和高效率的半导体发光器件，并提供其制造方法。解决方案：半导体发光器件包括层叠结构，第一导电层，第二导电层和第三导电层。层叠结构包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。第一导电层设置在与设置第一半导体层的一侧相反的第二半导体层侧，并且对从发光层发射的发射光具有透明度。第二导电层接触与设置有第二半导体层的表面相对的第一导电层的第一主表面。第三导电层接触第一主表面，并且对于发射光具有比第二导电层更高的反射率。第三导电层包括延伸部分，其中至少该部分不被第二导电层覆盖并且与第一主表面平行延伸。版权所有（C）2012，JPO＆INPIT

57. 发明专利

JP2012038824A Method for manufacturing semiconductor light-emitting element 有权
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2012038824A
公开(公告)日：2012-02-23
申请号：JP2010175803
申请日：2010-08-04
申请人： Toshiba Corp , 株式会社東芝
发明人： HIKOSAKA TOSHITERU , SHIODA MICHIYA , HARADA YOSHIYUKI , SUGIYAMA NAOJI , TACHIBANA KOICHI , NUNOUE SHINYA
IPC分类号： H01L21/205 , H01L33/32
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element capable of suppressing the degradation of an active layer.SOLUTION: A method is provided for manufacturing a semiconductor light-emitting element having a crystalline layer containing a nitride semiconductor. The nitride semiconductor comprises In atoms and Ga atoms, and the ratio xs of the number of In atoms with respect to the sum of the number of In atoms and the number of Ga atoms satisfies 0.2≤xs≤0.4. The manufacturing method comprises a step for forming the crystalline layer by supplying a source gas including first molecules containing Ga atoms and second molecules containing In atoms on a main surface of a substrate. The ratio of second partial pressure with respect to the sum of a first partial pressure for the first molecules and degradation species of the first molecules to the source gas and a second partial pressure for the second molecules and degradation species of the second molecules to the source gas is set to be a vapour phase feed ratio xv of In. (1-1/xv)/(1-1/xs) is less than 0.1.
摘要翻译：解决的问题：提供能够抑制活性层劣化的半导体发光元件的制造方法。解决方案：提供一种制造具有含有氮化物半导体的结晶层的半导体发光元件的方法。氮化物半导体包含In原子和Ga原子，并且In原子数相对于In原子数和Ga原子数之和的比xs满足0.2≤xs≤0.4。该制造方法包括通过在基板的主表面上提供包含含有Ga原子的第一分子和含有In原子的第二分子的源气体来形成结晶层的步骤。第二分压相对于第一分子的第一分压和第一分子与源气体的降解物质的总和的比率以及第二分子的第二分压和第二分子对源的降解物质的比率气体被设定为In的气相进料比xv。（1-1 / xv）/（1-1 / xs）小于0.1。版权所有（C）2012，JPO＆INPIT

58. 发明专利

JP2012023264A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012023264A
公开(公告)日：2012-02-02
申请号：JP2010161375
申请日：2010-07-16
申请人： Toshiba Corp , 株式会社東芝
发明人： HARADA YOSHIYUKI , HIKOSAKA TOSHITERU , SHIODA MICHIYA , TACHIBANA KOICHI , NAKO HAJIME , NUNOUE SHINYA
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high emission efficiency in a long-wavelength region, and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device comprises an n-type semiconductor layer 10, a p-type semiconductor layer 20, and a light-emitting part 30. The light-emitting part comprises: a first light-emitting layer LE1 including a first well layer region WR1 having an In composition ratio in group-III elements of 20% or more and a first non-well layer region NR1; a first barrier layer BL1 provided between the first light-emitting layer and the p-type semiconductor layer; a second light-emitting layer LE2 that is provided between the first barrier layer and the p-type semiconductor layer and includes a second well layer region WR2 having the same In composition ratio as that of the first well layer region and a second non-well layer region NR2; a second barrier layer BL2 provided between the second light-emitting layer and the p-type semiconductor layer; and an n-side barrier layer BLn provided between the first light-emitting layer and the n-type semiconductor layer. At least one of the first well layer region and the second well layer region includes a portion having a width of 50 nm or more.
摘要翻译：要解决的问题：提供一种在长波长区域具有高发射效率的半导体发光元件，并提供其制造方法。解决方案：半导体发光器件包括n型半导体层10，p型半导体层20和发光部30.发光部包括：第一发光层LE1 包括III族元素中的In组成比在20％以上的第一阱层区域WR1和第一非阱层区域NR1; 设置在第一发光层和p型半导体层之间的第一势垒层BL1; 设置在第一阻挡层和p型半导体层之间的第二发光层LE2，具有与第一阱层区域相同的In组成比的第二阱层区域WR2和第二非阱阱区域层区NR2; 设置在第二发光层和p型半导体层之间的第二阻挡层BL2; 以及设置在第一发光层和n型半导体层之间的n侧势垒层BLn。第一阱层区域和第二阱层区域中的至少一个包括宽度为50nm以上的部分。版权所有（C）2012，JPO＆INPIT

59. 发明专利

JP2012019068A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2012019068A
公开(公告)日：2012-01-26
申请号：JP2010155591
申请日：2010-07-08
申请人： Toshiba Corp , 株式会社東芝
发明人： HUANG JONG-IL , SAITO SHINJI , SUGAI MAKI , HASHIMOTO REI , HATTORI YASUSHI , TOYAMA MASAKI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01L33/06 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving luminous efficiency.SOLUTION: The semiconductor light-emitting element includes a nitride semiconductor having a stack of an n-type semiconductor layer 10, a first barrier layer 32a, a first well layer 31a, an Al-containing layer 40, and an intermediate layer 50 in that order toward the [0001] direction. The Al-containing layer contacts the first well layer and has a larger band gap energy than that of the first barrier layer. Besides, the Al-containing layer has a smaller lattice constant than that of the n-type semiconductor layer and has a composition of AlGaInN (0
摘要翻译：要解决的问题：提供能够提高发光效率的半导体发光元件。解决方案：半导体发光元件包括具有n型半导体层10，第一势垒层32a，第一阱层31a，含Al层40和中间层的叠层的氮化物半导体 50朝向[0001]方向。含Al层与第一阱层接触并具有比第一势垒层更大的带隙能量。此外，含Al层的晶格常数比n型半导体层的晶格常数小，并且具有Al x1 Ga 1 -x1-y1 在 y1 N（0

60. 发明专利

JP2015053531A 半導体発光素子审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2015053531A
公开(公告)日：2015-03-19
申请号：JP2014254994
申请日：2014-12-17
申请人：株式会社東芝 , Toshiba Corp
发明人： KIMURA SHIGEYA , TACHIBANA KOICHI , NUNOUE SHINYA
IPC分类号： H01L33/06 , H01L33/32
摘要：【課題】発光効率の高い半導体発光素子を提供する。【解決手段】実施形態に係る半導体発光素子は、窒化物半導体を含むn形半導体層と、窒化物半導体を含むp形半導体層と、前記n形半導体層と前記p形半導体層との間に設けられた発光層と、を備える。前記発光層は、交互に積層された、複数の障壁層と、複数の井戸層と、を含む。前記複数の障壁層のうちで最も前記p形半導体層に近いp側障壁層は、III族元素を含む複数の第1層と、前記第1層と積層されIII族元素を含む第2層であって、前記第2層のIII族元素中におけるIn組成比が、前記第1層のIII族元素中におけるIn組成比よりも高い、複数の第2層と、を含む。【選択図】図1
摘要翻译：要解决的问题：提供一种具有高发光效率的半导体发光器件。解决方案：半导体发光器件包括：包括氮化物半导体的n型半导体层; 包括氮化物半导体的p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光层。发光层包括交替层叠的多个阻挡层和多个阱层。多个势垒层中最靠近p型半导体层的p侧阻挡层包括：多个含有III族元素的第一层; 以及多个第二层，其包括层叠有第一层的III族元素，其中第二层中的III族元素中的In组成比高于第一层中的III族元素中的。

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