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51. 发明专利

JPH1072296A PRODUCTION OF BISMUTH SUBSTITUTED RARE EARTH METAL-IRON GARNET SINGLE CRYSTAL FILM 失效
公开(公告)号：JPH1072296A
公开(公告)日：1998-03-17
申请号：JP23062196
申请日：1996-08-30
申请人： TDK CORP
发明人： OIDO ATSUSHI , KAWASAKI KATSUMI
IPC分类号： G02F1/09 , C30B19/12 , C30B29/28
摘要： PROBLEM TO BE SOLVED: To efficiently obtain a thick bismuth substd. rare earth metal-iron garnet single crystal film almost free from crystal defects and cracks and having satisfactory crystal quality by carrying out liq. phase epitaxial growth from a molten mixture of specified metal oxides as starting materials on a single crystal substrate having a specified compsn. SOLUTION: Liq. phase epitaxial growth is carried out from a molten mixture contg. bismuth oxide (A), at least one kind of rare earth metal oxide (B) and iron oxide (C) or further contg. oxide (D) of at least one kind of metal selected from among Ga, Al, In, Sc, Si, Ti, Ge and Mg on a single crystal substrate represented by the formula Cax Nby Gaz O12 (2.99

52. 发明专利

JPH08295594A METHOD FOR GROWING SINGLE CRYSTAL 失效
公开(公告)号：JPH08295594A
公开(公告)日：1996-11-12
申请号：JP11903895
申请日：1995-04-21
申请人： TDK CORP
发明人： OIDO ATSUSHI , YAMAZAWA KAZUTO
IPC分类号： C30B19/08 , C30B29/28 , H01F41/28
摘要： PURPOSE: To provide a single crystal film excellent in quality by using a furnace having a structure packed with heat resistant insulator partially shielding heat on side face of a crucible for growing a single crystal. CONSTITUTION: A platinum crucible 5 for growing a single crystal is housed in an alumina crucible supported on a crucible mount 4 and heat resistant insulators 7 such as ZrO2 or the like are packed around the platinum crucible 5. Next, a magnetic garnet constituting material which is obtained by blending Fe2 O3 , B2 O3 , PbO, Bi2 O3 , Ga2 O3 , Y2 O3 and La2 O3 or the like in a prescribed ratio, is filled up in the platinum crucible 5 and furnace temperature is raised up to about 1000 deg.C to melt and stir the materials in the platinum crucible 5. After that, temperature of the melt is fallen to 700-800 deg.C at a specified temperature discending velocity and by growing for about 5-20 hours on a substrate such as an MgZr-substituted Cd3 Ga5 O12 while revolving the substrate, magnetic garnet single crystal film of a specified thickness having (YLaBi)3 (FeGa)5 O12 composition and small in half value width (ΔH) is obtained.

53. 发明专利

JPH08274509A MAGNETOSTATIC WAVE S/N ENHANCER 失效
公开(公告)号：JPH08274509A
公开(公告)日：1996-10-18
申请号：JP9584395
申请日：1995-03-30
申请人： TDK CORP
发明人： KURATA HITOYOSHI , OIDO ATSUSHI
IPC分类号： H01P1/23 , H04B1/10
摘要： PURPOSE: To apply a magnetostatic wave S/N enhancer to the BS/CS broadcast or high-speed digital data communication having sharp frequency transition by shortening the transient response time of magnetostatic wave elements using magnetic garnet films. CONSTITUTION: Concerning a magnetostatic wave S/N enhancer provided with magnetostatic wave filters 2A and 4, etc., using magnetic garnet films for propagating magnetostatic waves, half-value width ΔH for the absorption peak of ferromagnetic resonance on the magnetic garnet films of the magnetostatic wave filters 2A and 4 at 9.55GHz is made to conform to 90e>=ΔH>=0.70e.

54. 发明专利

JP2006342013A CRUCIBLE FOR GROWING SINGLE CRYSTAL 审中-公开
公开(公告)号：JP2006342013A
公开(公告)日：2006-12-21
申请号：JP2005168511
申请日：2005-06-08
申请人： TDK CORP
发明人： OIDO ATSUSHI
IPC分类号： C30B19/06
摘要： PROBLEM TO BE SOLVED: To provide a noble metal crucible for growing a single crystal, which is used for growing a magnetic garnet single crystal by utilizing a LPE (Liquid-Phase Epitaxial) method and by which a good quality single crystal film can be obtained. SOLUTION: The crucible 1 for growing the single crystal is used for storing a raw material melt 4 for growing the single crystal and comprises: a Au-made inner wall part 2 having a thickness of ≥0.1 mm and being brought into contact with the raw material melt 4; and a Pt-made outer wall part 3 having a thickness of ≥0.3 mm and covering the outside of the inner wall part 2. COPYRIGHT: (C)2007,JPO&INPIT

55. 发明专利

JP2003195242A HARD MAGNETIC GARNET MATERIAL, FARADAY ROTATOR, OPTICAL ISOLATOR AND OPTICAL COMMUNICATION SYSTEM 审中-公开
公开(公告)号：JP2003195242A
公开(公告)日：2003-07-09
申请号：JP2001399276
申请日：2001-12-28
申请人： TDK CORP
发明人： SUGAWARA TAMOTSU , OIDO ATSUSHI , YAMAZAWA KAZUTO
IPC分类号： G02F1/09 , G02B27/28
摘要： PROBLEM TO BE SOLVED: To provide a hard magnetic bismuth-substituted rare earth iron garnet material having excellent Faraday rotation ability, temperature characteristics, wavelength characteristics and insertion loss. SOLUTION: The bismuth-substituted rare earth iron garnet material having a chemical composition of (Bi 3-x-y-x Gd x Tb y Yb z )Fe (5-w) M w O 12 (wherein M=one or two or more of Ga, Al, Ge, Sc, In, Si and Ti; 0.5≤x+y+z≤2.5; 0.2≤w≤2.5) is provided with a hard magnetic property and has excellent Faraday rotation ability, temperature characteristics, wavelength characteristics and insertion loss. COPYRIGHT: (C)2003,JPO

56. 发明专利

JP2003081693A Device for growing single crystal for faraday rotor 审中-公开
标题翻译：用于生产FARADAY转子单晶的装置
公开(公告)号：JP2003081693A
公开(公告)日：2003-03-19
申请号：JP2001270047
申请日：2001-09-06
申请人： Tdk Corp , ティーディーケイ株式会社
发明人： TODA KAZUSHIGE , ONODERA AKIRA , ITO TAKESHI , OIDO ATSUSHI
IPC分类号： G02F1/09 , C30B29/28
摘要： PROBLEM TO BE SOLVED: To obtain a magnetic garnet single crystal by epitaxially growing after precisely controlling the temperature of a solution at crystal growth and increasing the substitution amount of Bi. SOLUTION: In a single crystal growing device equipped with a furnace tube, a crucible for holding at least one of a single crystal constitutive element and its oxide, and a flux, a supporting part for supporting the crucible at a predetermined position in the furnace tube, and a heating element arranged at the peripheral part of the furnace tube, the inner diameter of the furnace tube is set to be
摘要翻译：要解决的问题：通过在晶体生长后精确控制溶液的温度并增加Bi的置换量后通过外延生长获得磁性石榴石单晶。解决方案：在装有炉管的单晶生长装置中，用于保持单晶构成元素及其氧化物中的至少一种的坩埚和助熔剂，用于将坩埚支撑在炉管中的预定位置的支撑部以及设置在炉管周边部分的加热元件，将炉管的内径设定为<= 110mm。

57. 发明专利

JPH08273931A MAGNETIC GARNET FILM FOR MAGNETOSTATIC WAVE S/N ENHANCER AND ITS MANUFACTURE 失效
公开(公告)号：JPH08273931A
公开(公告)日：1996-10-18
申请号：JP9996395
申请日：1995-03-31
申请人： TDK CORP
发明人： OIDO ATSUSHI , KURATA HITOYOSHI
IPC分类号： H01F10/24 , H01F41/28
摘要： PURPOSE: To obtain a magnetic garnet film by which an S/N ratio can be im proved sufficiently and stably when the magnetic garnet film is used for a device for a magnetostatic wave S/N enhancer, whose yield is enhanced, whose costs can be lowered and which can make an apparatus simple and small. CONSTITUTION: The diameter of a single-crystal wafer for a magnetic garnet film 51 which is grown on the surface of a GGG substrate 50 is set at (a) inch [=(a)×2.54cm]. Then, the distribution of a film thickness on the whole single- crystal wafer is to be set within 2 (a) %.

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