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    • 54. 发明专利
    • LINE CONCENTRATION DISTRIBUTING SYSTEM
    • JPS60256245A
    • 1985-12-17
    • JP11091884
    • 1984-06-01
    • TOSHIBA KK
    • KOBAYASHI HIROSHIHARUYAMA HIDEOHIROSE TSUGUHIRO
    • H04L12/413
    • PURPOSE:To simplify the system constitution by providing a means detecting surely the signal collision to a sole medium attachment unit MAU so as to connect plural information processing units to the MAU. CONSTITUTION:The medium attachment unit MAU13 is connected to a transmission line 11 of the line concentration distributing system and plural information processing units 15 are connected to each MAU13. The MAU13 is provided with a line concentration distributing circuit 31, and transmission, reception, collision display and power lines comprising AUI cables 1-n are connected to the distributing circuit 31. An output from the distributing circuit 31 is processed by a transmission system 33, a reception system 35 and a collision detecting system 37. The collision detecting system 37 consists of an envelope detecting circuit 61 detecting the envelope of the signal from the reception system 35, a beat signal detecting circuit 63, an OR gate 65 and a collision display signal generating device 67. Further, the collision of the signal is detected surely to the MAU13 and plural information processing units 15 are connected to the sole MAU13.
    • 55. 发明专利
    • INFORMATION TRANSMISSION SYSTEM
    • JPS60256244A
    • 1985-12-17
    • JP11251684
    • 1984-06-01
    • TOSHIBA KK
    • HIROSE TSUGUHIROHARUYAMA HIDEOKOBAYASHI HIROSHI
    • H04L12/10H04L12/413
    • PURPOSE:To improve the reliability of an MAU by providing a drive circuit converting a signal from a transmission line into signal proper to a cable to a medium attachment unit MAU for base band transmission so as to improve the performance of the MAU. CONSTITUTION:An information processing unit (not shown in figure) is connected to a carrier band transmission line 1 of the information transmission system and the MAU2 and the power supply 3 are connected to the transmission line. A carrier band signal from transmission line 1a of the transmission line 1 is fed to a reception signal line 1c, demodulated by a receiver 14 of the MAU2 and the carrier band signal is formed into the original base band signal and transmitted to a processing unit from line driver 16. Further, the reception signal is detected by an envelope detector 17, the amplitude component is fed to a collision detecting circuit 18a, where the collision of signals is detected and a collision display signal is outputted from a collision display signal generating section 18b. The power is supplied from a power supply unit 21 in the MAU2 is supplied to the detector 17, the circuit 18a and the signal generating section 18b to which no power is supplied from the transmission line 1 of the said MAU2 so as to improve the performance of the MAU2.
    • 58. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS60176270A
    • 1985-09-10
    • JP3206184
    • 1984-02-22
    • TOSHIBA KK
    • KOBAYASHI HIROSHINIHEI HIROYUKIKANZAKI KOUICHI
    • H01L21/336H01L29/78
    • PURPOSE:To reduce junction capacitance, and to increase the speed of operation by forming a P type pocket layer to a substrate under the side wall of a gate electrode so as to be able to be completely distinguished from N type ion implantation layers in source and drain regions. CONSTITUTION:A gate insulating film 32 and a P type ion implantation layer 33 are formed on an Si substrate 31 in succession, a polycrystalline Si layer to which P is doped is shaped, and a gate electrode 34 is formed through patterning. When an Si oxide film 35 and an Al film 36 are deposited in succession, grooves 37a, 37b can be formed to the side wall of the gate electrode 34. Opening sections 38a, 38b are shaped through etching, and P type ion implantation layers 39a, 39b are formed to the substrate 31 in a self-control manner. The residual Al film 36 is removed, and the ions of an N type impurity are implanted to the substrate 31 to shape shallow N type ion implantation layers 40a, 40b. Spacers 41a, 41b are formed on the side wall of the gate electrode 34, N type ion implantation layers 42a, 42b are shaped, and P type pocket layers 43a, 43b, a source region 44 and a drain region 45 are each formed through activation.
    • 60. 发明专利
    • ANGLE MODULATOR
    • JPS6074804A
    • 1985-04-27
    • JP18260183
    • 1983-09-30
    • TOSHIBA KK
    • HARUYAMA HIDEOKOBAYASHI HIROSHIHIROSE TSUGUHIRO
    • H03C3/00H03C3/09
    • PURPOSE:To obtain easily an angle modulated signal having a stable frequency by applying reference frequency signal to a control circuit from a reference oscillator in order to fix the reference frequency of the angle modulated signal. CONSTITUTION:The signal to be modulated is applied to an adder 5 from an input terminal 6, and the adder adds this signal to a feedback signal given from an LPF9 constituting a control circuit 3 to apply them to a voltage control type oscillator 4. The oscillator 4 gives a defection to the oscillation frequency according to said addition signal and delivers an angle modulated signal via an output terminal 7. At the same time, the angle modulated signal is applied to a phase comparator 8. The comparator 8 supplies the angle modulated signal and a reference frequency signal given from a reference oscillator 2 and detects the phase angle difference of both signals. This phase angle difference signal is supplied to the adder 5 via the LPF9. In such a constitution, it is possible to obtain easily an angle modulated signal having a stable reference frequency from the oscillator without giving a special frequency stabilizing counterplan to the oscillator 1 itself.