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51. 发明专利

JP2006310890A Semiconductor module and its manufacturing process 审中-公开
标题翻译：半导体模块及其制造工艺
公开(公告)号：JP2006310890A
公开(公告)日：2006-11-09
申请号：JP2006213401
申请日：2006-08-04
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUI RYOSUKE , MIZUHARA HIDEKI , NAKAMURA TAKESHI
IPC分类号： H01L21/56 , H01L23/14 , H01L23/29 , H01L23/31 , H01L25/04 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/97 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/00014 , H01L2224/85 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To enhance adhesion between an insulating substrate and an insulator formed thereon, e.g. the sealing resin or the bonding member of a semiconductor element, in a semiconductor module. SOLUTION: A plurality of wiring layers each consisting of an interlayer insulating film 405 and copper wiring 407 are laminated and a solder resist layer 408 is formed on the uppermost layer. Elements 410a and 410b are formed on the surface of the solder resist layer 408. Elements 410a and 410b have a structure molded of mold resin 415. Surface of the solder resist layer 408 is modified by plasma processing selecting specific conditions to form a micro protrusion group. On the above-mentioned surface of the solder resist layer 408, X-ray photoelectron spectroscopic analysis spectrum has a value y/x not smaller than 0.4, where x is the detection intensity at bound energy of 284.5 eV, and y is the detection intensity at bound energy of 286 eV. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了增强绝缘基板和其上形成的绝缘体之间的粘附性，例如，密封树脂或半导体元件的接合部件。解决方案：层叠由层间绝缘膜405和铜布线407组成的多个布线层，并且在最上层形成阻焊层408。元件410a和410b形成在阻焊层408的表面上。元件410a和410b具有由模制树脂415模制的结构。阻焊层408的表面通过等离子体处理来改变选择特定条件以形成微突起组。在阻焊层408的上述表面上，X射线光电子能谱分析光谱的y / x为0.4以上，其中x为结合能量时的检测强度为284.5eV，y为检测强度能量为286 eV。版权所有（C）2007，JPO＆INPIT

52. 发明专利

JP2006303531A Semiconductor device and method of manufacturing same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006303531A
公开(公告)日：2006-11-02
申请号：JP2006173798
申请日：2006-06-23
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUI RYOSUKE , MIZUHARA HIDEKI , NAKAMURA TAKESHI
IPC分类号： H01L21/60 , H01L23/12
CPC分类号： H01L2221/68345 , H01L2224/05554 , H01L2224/45 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49 , H01L2224/49171 , H01L2224/85009 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a means for suppressing connection failure between a semiconductor chip and a wiring layer in semiconductor package and improving the reliability and yield of an element. SOLUTION: An adhesion film 464 is formed on the front surface of an electrode film 462. Further, a coating film 466 is formed on the adhesion film. Copper is used as the material of the electrode film 462. Nickel, chromium, molybdenum, tungsten, aluminum, these alloy, and the like are used as a material for constituting the adhesion film 464. Gold, silver, platinum, these alloy, and the like are used as a material for constituting the coating film 466. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于抑制半导体封装中的半导体芯片和布线层之间的连接故障的装置，并且提高元件的可靠性和产量。解决方案：在电极膜462的前表面上形成粘合膜464.此外，在粘合膜上形成涂膜466。使用铜作为电极膜462的材料。镍，铬，钼，钨，铝，这些合金等用作构成粘合膜464的材料。金，银，铂，这些合金和使用类似物作为构成涂膜466的材料。版权所有（C）2007，JPO＆INPIT

53. 发明专利

JP2006179652A Circuit device 有权
标题翻译：电路设备
公开(公告)号：JP2006179652A
公开(公告)日：2006-07-06
申请号：JP2004370774
申请日：2004-12-22
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： OBARA YASUHIRO , USUI RYOSUKE , MIZUHARA HIDEKI , INOUE YASUNORI
IPC分类号： H01L23/12 , H01L21/60
CPC分类号： H01L21/6835 , H01L21/561 , H01L21/563 , H01L21/568 , H01L23/293 , H01L23/3114 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/04105 , H01L2224/05573 , H01L2224/05647 , H01L2224/12105 , H01L2224/73203 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/10157 , H01L2924/14 , H01L2924/181 , H01L2924/18162 , H01L2924/3511 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a circuit device high in the reliability of resin sealing and its manufacturing method.
SOLUTION: One surface of an insulating resin film 2 is provided with a semiconductor chip 1 and the other surface of the insulating resin film 2 is provided with a conductive layer 3 electrically connected to the semiconductor chip 1. The conductive layer 3 is provided with a solder ball (electrode) 4 for connecting the same to the circuit substrate 5 and, further, an insulating resin layer 6 is provided between the conductive layer 3 and the circuit substrate 5 so as to bury the electrode 4 whereby the circuit device 100a is constituted. In this case, the side surface of the semiconductor chip 1 is covered by the insulating resin film 2.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种树脂密封可靠性高的电路装置及其制造方法。解决方案：绝缘树脂膜2的一个表面设置有半导体芯片1，并且绝缘树脂膜2的另一个表面设置有电连接到半导体芯片1的导电层3.导电层3是设置有用于将其连接到电路基板5的焊球（电极）4，并且还在导电层3和电路基板5之间设置绝缘树脂层6，以便掩埋电极4，由此电路装置 100a构成。在这种情况下，半导体芯片1的侧表面被绝缘树脂膜2覆盖。版权所有（C）2006，JPO＆NCIPI

54. 发明专利

JP2006013369A Circuit device and manufacturing method thereof 审中-公开
标题翻译：电路设备及其制造方法
公开(公告)号：JP2006013369A
公开(公告)日：2006-01-12
申请号：JP2004191883
申请日：2004-06-29
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUI RYOSUKE , MIZUHARA HIDEKI , INOUE YASUNORI
IPC分类号： H01L25/18 , H01L25/04
CPC分类号： H01L24/82 , H01L2224/24 , H01L2224/24145 , H01L2224/24195 , H01L2224/32145 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19043 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To improve the adhesion properties between the substrate of a circuit device and the insulating film between elements.
SOLUTION: The circuit device comprises: a metal base 140; an insulating resin film 122 provided on the base 140; a plurality of semiconductor elements 142a, 142b buried into the insulating resin film 122; and a passive element 144. A recess in which a thermally conductive member 304 is buried into at least one surface of one or more semiconductor elements 142a, 142b and the passive element 144 is formed. In the above configuration, metal or a semiconductor element is used as a thermal conductive member.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提高电路器件的衬底和元件之间的绝缘膜之间的粘附性。电路装置包括：金属基座140; 设置在基座140上的绝缘树脂膜122; 埋入绝缘树脂膜122中的多个半导体元件142a，142b; 和无源元件144.形成有导热构件304埋设在一个或多个半导体元件142a，142b和无源元件144的至少一个表面中的凹部。在上述结构中，使用金属或半导体元件作为导热构件。版权所有（C）2006，JPO＆NCIPI

55. 发明专利

JP2006013368A Circuit device and manufacturing method thereof 审中-公开
标题翻译：电路设备及其制造方法
公开(公告)号：JP2006013368A
公开(公告)日：2006-01-12
申请号：JP2004191882
申请日：2004-06-29
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUI RYOSUKE , MIZUHARA HIDEKI , INOUE YASUNORI
IPC分类号： H01L25/18 , H01L25/04
CPC分类号： H01L24/82 , H01L2224/24 , H01L2224/24145 , H01L2224/24195 , H01L2224/32145 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19043 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To improve the adhesion properties between the substrate of a circuit device and the insulating film between elements, and also to improve the heat radiation properties of the circuit device.
SOLUTION: The circuit device comprises: a metal base 140 formed by a cladding material; an insulating resin film 122 provided on the base 140; a plurality of semiconductor elements 142a, 142b buried into the insulating resin film 122; and a passive element 144. The base 140 is preferably composed of a cladding material in which metal having improved thermal conductivity is combined with metal having low thermal expansion. The metal having improved thermal conductivity is metal having a thermal conductivity of 200-500 W/mK, and includes Al, Au, Ag, Cu, and its alloy. And the metal having low thermal expansion is metal having a thermal coefficient of expansion of 0.5-5.0×10
-6 /K and includes Fe, Ni, and Co alloys.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了改善电路器件的衬底和元件之间的绝缘膜之间的粘合性，并且还提高电路器件的散热性能。解决方案：电路装置包括：由包层材料形成的金属基座140; 设置在基座140上的绝缘树脂膜122; 埋入绝缘树脂膜122中的多个半导体元件142a，142b; 和无源元件144.基底140优选由包覆材料组成，其中具有改善的导热性的金属与具有低热膨胀的金属组合。具有改善的导热性的金属是具有200-500W / mK的热导率的金属，并且包括Al，Au，Ag，Cu及其合金。而具有低热膨胀性的金属是热膨胀系数为0.5-5.0×10 -6 / K的金属，包括Fe，Ni和Co合金。版权所有（C）2006，JPO＆NCIPI

56. 发明专利

JP2006013367A Circuit device and manufacturing method thereof 审中-公开
标题翻译：电路设备及其制造方法
公开(公告)号：JP2006013367A
公开(公告)日：2006-01-12
申请号：JP2004191881
申请日：2004-06-29
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUI RYOSUKE , MIZUHARA HIDEKI , INOUE YASUNORI
IPC分类号： H01L25/18 , H01L25/04
CPC分类号： H01L24/82 , H01L2224/24 , H01L2224/2413 , H01L2224/24145 , H01L2224/24195 , H01L2225/06568 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To improve the adhesion properties between the substrate of a circuit device and the insulating film between elements.
SOLUTION: Circuit elements, such as a plurality of semiconductor elements 142a, 142b and a passive element 144, buried into an insulating resin film 122, are provided on a metal base 140 whose surface roughness Ra ranges from 0.3 to 10 μm, thus operating an anchor effect between the base 140 and the insulating resin film 122 and improving the adhesion properties between the base 140 and the insulating resin film 122.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提高电路器件的衬底和元件之间的绝缘膜之间的粘附性。解决方案：在表面粗糙度Ra为0.3〜10μm的金属基体140上设置埋入绝缘树脂膜122中的多个半导体元件142a，142b和无源元件144的电路元件，从而在基底140和绝缘树脂膜122之间起锚固作用，并提高基底140和绝缘树脂膜122之间的粘附性。版权所有（C）2006，JPO＆NCIPI

57. 发明专利

JP2005347353A Circuit device and its manufacturing method 审中-公开
标题翻译：电路设备及其制造方法
公开(公告)号：JP2005347353A
公开(公告)日：2005-12-15
申请号：JP2004162652
申请日：2004-05-31
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： IGARASHI YUUSUKE , NAKAMURA TAKESHI , INOUE YASUNORI , MIZUHARA HIDEKI , USUI RYOSUKE
IPC分类号： H05K1/11 , H01L21/48 , H01L23/12 , H01L23/31 , H01L23/48 , H01L23/498 , H01L23/538 , H01L25/04 , H01L25/18 , H05K1/05 , H05K3/00 , H05K3/28 , H05K3/40 , H05K3/42 , H05K3/46
CPC分类号： H05K3/421 , H01L21/4857 , H01L23/3121 , H01L23/49822 , H01L23/5383 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2221/68377 , H01L2224/16225 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/10253 , H01L2924/12042 , H01L2924/1301 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H01L2924/351 , H05K1/056 , H05K3/0035 , H05K3/284 , H05K3/423 , H05K3/4647 , H05K3/4652 , H05K2201/0209 , H05K2201/09563 , H05K2201/096 , H05K2203/0369 , H05K2203/0554 , H05K2203/1476 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/92247 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a preferable circuit device so as to penetrate an insulating layer, and to connect two or more laminated wiring layers mutually. SOLUTION: The manufacturing method for a hybrid integrated circuit device 10 is constituted such that a first electric conduction film 28A is made to laminate via a first insulating layer 17A, and a first wiring layer 18A is formed by patterning a first electric conduction film 28A. Next, a second electric conduction film 28B is made to laminate via a second insulating layer 17B. Further, a terminal area 25 for mutually connecting wiring layers is formed by removing partially the second insulating layer 17B of a desired part, and a second electric conduction film 28B. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供优选的电路装置的穿透绝缘层的制造方法，并且相互连接两个或更多层压布线层。解决方案：混合集成电路器件10的制造方法被构成为使得第一导电膜28A经由第一绝缘层17A层压，并且通过图案化第一导电形成第一布线层18A 电影28A。接下来，使第二导电膜28B经由第二绝缘层17B层压。此外，用于相互连接布线层的端子区域25通过部分地去除所需部分的第二绝缘层17B和第二导电膜28B而形成。版权所有（C）2006，JPO＆NCIPI

58. 发明专利

JP2005286146A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005286146A
公开(公告)日：2005-10-13
申请号：JP2004098802
申请日：2004-03-30
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUI RYOSUKE , MIZUHARA HIDEKI , INOUE YASUNORI
IPC分类号： H01L25/00 , H01L21/56
CPC分类号： H01L2224/24 , H01L2224/48091 , H01L2224/48227 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To further improve a technology for reduction in the size of a semiconductor device and for reduction in the thickness thereof. SOLUTION: The semiconductor device 200 comprises a base material 140, a semiconductor element 142 and a passive element 144 provided on the base material 140, a photosensitive insulating resin film 122 formed on the semiconductor element 142 and a passive element 144, and a conductive film 120 formed on the insulating resin film 122. After the conductive film 120 is selectively removed, the insulating resin film 122 is exposed and developed using the conductive film 120 as a mask to form a via hole to the insulating resin film 122. Subsequently, the via hole is filled with a conductive material to form a via 121. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了进一步改进用于减小半导体器件的尺寸并减小其厚度的技术。解决方案：半导体器件200包括基材140，半导体元件142和设置在基材140上的无源元件144，形成在半导体元件142上的感光绝缘树脂膜122和无源元件144，以及形成在绝缘树脂膜122上的导电膜120.在选择性地去除导电膜120之后，使用导电膜120作为掩模将绝缘树脂膜122曝光和显影，以在绝缘树脂膜122上形成通孔。随后，通孔填充导电材料以形成通孔121.版权所有（C）2006，JPO＆NCIPI

59. 发明专利

JP2004281704A Signal transmitting circuit, and method of manufacturing signal transmitting circuit and semiconductor circuit 有权
标题翻译：信号发送电路及其制造信号发送电路和半导体电路的方法
公开(公告)号：JP2004281704A
公开(公告)日：2004-10-07
申请号：JP2003070811
申请日：2003-03-14
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUI RYOSUKE , ODA SHINKO , MIZUHARA HIDEKI
IPC分类号： H01L27/04 , H01L21/822
CPC分类号： H01L24/05 , H01L2224/04042 , H01L2224/48091 , H01L2224/48463 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To protect a circuit element from electrostatic breakdown and, at the same time, to transmit high-speed signals in a semiconductor circuit. SOLUTION: The semiconductor circuit comprises a protective circuit 12 which discharges the voltage of a prescribed value or higher when the voltage is impressed, a cell 10 containing the circuit element, and a first pad electrode 14 connected to the cell 10 through the protective circuit 12. The circuit also comprises a second pad electrode 16 connected to the cell 10 without passing through the protective circuit 12 and wiring 18 which connects them to each other. The second pad electrode 16 can be constituted in a state where the electrode 16 is covered with an insulating film 22. In this case, an opening 24 is formed in the insulating film 22 to expose the second pad electrode 16. The opening 24 is formed after a process, such as the so-called pre-process, transportation, dicing, mounting work on a lead frame, etc., during which electrostatic breakdown tends to occur ends in a prescribed manufacturing process of the semiconductor circuit. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了保护电路元件免受静电击穿，并且同时在半导体电路中传输高速信号。解决方案：半导体电路包括保护电路12，其在施加电压时放电规定值以上的电压，容纳电路元件的电池单元10以及通过电池元件连接到电池单元10的第一焊盘电极14 保护电路12.电路还包括连接到电池单元10的第二焊盘电极16，而不通过保护电路12和将它们彼此连接的布线18。第二焊盘电极16可以在电极16被绝缘膜22覆盖的状态下构成。在这种情况下，在绝缘膜22中形成开口24以露出第二焊盘电极16.形成开口24 在半导体电路的规定制造过程中，在静电破坏倾向于发生的处理之后，例如所谓的预处理，输送，切割，引线框架上的安装工作等。版权所有（C）2005，JPO＆NCIPI

60. 发明专利

JP2004186461A Manufacturing method of circuit unit 有权
公开(公告)号：JP2004186461A
公开(公告)日：2004-07-02
申请号：JP2002352141
申请日：2002-12-04
申请人： Kanto Sanyo Semiconductors Co Ltd , Sanyo Electric Co Ltd , 三洋電機株式会社 , 関東三洋セミコンダクターズ株式会社
发明人： USUI RYOSUKE , MIZUHARA HIDEKI , IGARASHI YUUSUKE , SAKAMOTO NORIAKI
IPC分类号： H05K3/28 , H01L21/48 , H01L23/12 , H01L23/31 , H01L23/498 , H05K3/38
CPC分类号： H01L24/97 , H01L21/4846 , H01L23/3128 , H01L23/49894 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/85913 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01011 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H05K3/284 , H05K3/381 , Y10T29/49117 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49165 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/00015
摘要： PROBLEM TO BE SOLVED: To irradiate an overcoat resin formed on a conductive wiring layer with plasma so as to improve the overcoat resin in adhesion to a sealing resin layer. SOLUTION: A first conductive film 23A and a second conductive film 23B are laminated interposing an interlayer insulating layer 22 between them. The first conductive film is selectively removed so as to form a first conductive wiring layer 12A, and the first conductive wiring layer 12A is coated with an overcoat resin 18. The surface of the overcoat resin 18 is turned rough by plasma irradiation. The roughened surface of the overcoat resin 18 and a circuit element 13 are coated with a sealing resin layer 17. COPYRIGHT: (C)2004,JPO&NCIPI

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