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51. 发明专利

JP2001276761A WASHING SYSTEM 失效
公开(公告)号：JP2001276761A
公开(公告)日：2001-10-09
申请号：JP2000101926
申请日：2000-04-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： G02F1/13 , B08B3/08 , B08B7/04 , G02F1/1333 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To effectively utilize ozone water, which has an intense oxidation property depending on the concentration of ozone and is possible to oxidize and deteriorate a vinyl chloride material commonly used for pipelines, while cancelling the disadvantageous possibility with the utilization effects, without needing dense cost for replacement of the existing pipelines buried in a building owing to possible oxidation deterioration. SOLUTION: Using a washing system comprising a chemical liquid preparation unit, a functional water production and preparation unit, a washing unit, and a liquid discharge and gas discharge unit, functional water containing ozone water and a chemical liquid containing water and diluted hydrofluoric acid are used for a cleaning means so as to clean a substrate and at the same time the waste liquid and the waste gas generated during the process are treated by aeration treatment and treatment with an activated carbon and a catalyst to decrease ozone concentration as close as possible to zero and then the waste liquid and the waste gas are discharged out of the building side to solve the possible problems.

52. 发明专利

JP2001096242A TREATING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001096242A
公开(公告)日：2001-04-10
申请号：JP27576399
申请日：1999-09-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： B08B3/08 , G03F7/38 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To obtain comprehensive washing effect by improving a film surface by a simple method and reducing particles and organic matter remaining on a substrate surface after washed and to form an organic film good in adhesion without any coating unevenness at the following step. SOLUTION: Ozonic water obtained by incorporating ozone gas in ultra pure water is used as functional water being a cleaning means to obtain the comprehensive washing effect in comparison with a combination of washing treatments to gather the cleaning effect of the conventional independent treatment.

53. 发明专利

JP2000315672A METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JP2000315672A
公开(公告)日：2000-11-14
申请号：JP12211099
申请日：1999-04-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： B08B1/00 , B08B3/02 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method and apparatus, which reduce residue particles on a substrate face after cleaned and attain synthetic cleaning effects of reduction in a residue organic substance, etc. SOLUTION: A substrate cleaner in a semiconductor manufacture comprises, under the same environment managing a clean level, an optical process part for decomposing a contamination on the surface of a substrate by a chemical reaction, and a water cleaning part and substrate drying part for eliminating a residue substance on the surface of the substrate by a physical external pressure, and after a face of the semiconductor substrate is irradiated with ultraviolet ray lamp in the optical process part for an optical reaction (optical decomposition) of the contamination of the surface of the substrate, by brush rubbing, megasonic water cleaning, high-pressure spray water cleaning, or the like as a physical external pressure method, the residue substance on the substrate face after optically decomposed is eliminated, thereby purifying the face of the semiconductor substrate.

54. 发明专利

JPH11111995A MANUFACTURE OF DISPLAY DEVICE 失效
公开(公告)号：JPH11111995A
公开(公告)日：1999-04-23
申请号：JP27090397
申请日：1997-10-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To surely fill a contact hole, planarize a substrate surface, and obtain superior coverage of a sputtering film by filling and forming contact metal through a plating method. SOLUTION: A substrate 1 for display is dipped in a plating solution, and first contact holes 21 are filled with a first contact metal 22. When a first etching mask 20 is stripped from the substrate 1, the first contact metal 22 which is superfluous is stripped together with the first etching mask. The first contact metal 22 is self-aligned highly precisely with the inside of the first contact hole 21 and formed with high flatness to a second interlayer insulating film 9. Hence alignment of high precision is performed by using again the first etching mask 20 formed, when the first contact holes 21 are formed. Thereby neither an exclusive mask is needed, nor the number of processes is increased.

55. 发明专利

JPH10209463A METHOD FOR WIRING FORMATION OF DISPLAY DEVICE, MANUFACTURE OF DISPLAY DEVICE, AND DISPLAY DEVICE 失效
公开(公告)号：JPH10209463A
公开(公告)日：1998-08-07
申请号：JP1284697
申请日：1997-01-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To allow reduction of a writing resistance to be compatible with brightness (aperture ratio) of display picture. SOLUTION: A first wiring pattern 2a of light transmitting conductor is formed on a display board 1, and an insulating film 3' formed through a thermal treatment is provided covering the first wiring pattern 2a. Further, an opening 3a is provided to the insulating film 3' so as to reach the first wiring pattern 2a, and shielding electrical conductor is filled into the opening 3a through a plating method which is carried out using the insulating film 3' as a mask, whereby a second wiring pattern 2b is formed by filling.

56. 发明专利

JP2502625B2 失效
公开(公告)号：JP2502625B2
公开(公告)日：1996-05-29
申请号：JP25103087
申请日：1987-10-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： H01L21/205 , H01L21/22

57. 发明专利

JPH08107210A THIN FILM TRANSISTOR ARRAY FOR LIQUID CRYSTAL DISPLAY AND ITS MANUFACTURE 失效
公开(公告)号：JPH08107210A
公开(公告)日：1996-04-23
申请号：JP24252994
申请日：1994-10-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO , KOBAYASHI IKUNORI
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PURPOSE: To provide a thin film transistor array for a liquid crystal display wherein the display screen is bright and the consumption power can be reduced. CONSTITUTION: A metal film is formed on the whole surface of an insulating substrate 1. A pattern turning to a gate electrode (a source/drain electrode) is formed by a resist protecting film. The region of a metal film except the resist protecting film is subjected to anodic oxidation and a transparent insulating film 10 is formed. Since the transparent insulating film 10 is formed neighboring to the gate electrode 2, and the surface step-difference generated by the gate electrode 2 is reduced, process stabilization is realized. Thereby the gate electrode 2 can be made a thin line, so that the aperture of one picture element surrounded by the gate electrode 2 and the source/drain electrode 7 is enlarged. Hence the aperture ratio is improved and the transmission light amount is increased, so that the display screen can be made bright, and the pattern region of an picture element 6 can be enlarged. The load to the back light is reduced and temperature rise can be prevented, so that the consumption power can be reduced.

58. 发明专利

JPH06188265A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06188265A
公开(公告)日：1994-07-08
申请号：JP34183692
申请日：1992-12-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KOBAYASHI IKUNORI , TAKEDA MAMORU , MINO YOSHIKO
IPC分类号： H01L21/3205 , C23C28/00 , G02F1/1368 , H01L21/336 , H01L29/40 , H01L29/45 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To make it possible to always use positive resist in patterning a thin film transistor array of such a structure that Al-based signal wiring and a transparent pixel electrode composed of indium tin oxide (ITO) are on the same major plane. CONSTITUTION:A source/drain electrode 19 of Al or Al allay is formed on the same major plane of a transparent insulating substrate 11 as an ITO pixel electrode 17 is. A Mo or Ti layer 20 whose oxidation potential is higher than the reduction potential of ITO is placed on the source/drain electrode 19 in an alkali solution. This prevents a oxidation-reduction reaction between Al and ITO in positive developer, and thus the corrosion of ITO.

59. 发明专利

JPH06109917A COLOR FILTER AND ITS PRODUCTION 失效
公开(公告)号：JPH06109917A
公开(公告)日：1994-04-22
申请号：JP25955492
申请日：1992-09-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO , KOSEKI HIDEO
IPC分类号： G02B5/20 , G02F1/1335
摘要： PURPOSE:To inexpensively produce the color filters without using a photolithographic method by bundling plural bar-shaped or planar colored glass materials and adhering these materials, then cutting the materials in the direction perpendicular to adhesive surfaces. CONSTITUTION:The bar-shaped colored glass 12R (red), 12G (green), 12B (blue) having desired transmittance and glass 13 for light shielding are arranged and bundled and the respective glass materials are adhered by heating, press welding and stretching. The glass materials are then cut by a hydraulic cutter in the direction perpendicular to the adhesive surfaces. The cut surfaces are polished, by which the mosaic color filters are obtd. Incident light is reflected by the glass 13 for light shielding within a counter substrate layer when transparent electrodes are formed on the mosaic color filters and the filters are used as the counter electrode of a liquid crystal panel. Brightly displayed images are then obtd. without mixing of the adjacent colors with each other.

60. 发明专利

JPH0548307B2 失效
公开(公告)号：JPH0548307B2
公开(公告)日：1993-07-21
申请号：JP28605585
申请日：1985-12-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , MINO YOSHIKO
IPC分类号： H01L21/205 , C23C16/44 , H01L21/31

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