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51. 发明专利

JPH04139094A METHOD FOR GROWING MAGNETO-OPTICAL GARNET CRYSTAL 失效
公开(公告)号：JPH04139094A
公开(公告)日：1992-05-13
申请号：JP25970090
申请日：1990-09-28
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO , SATO MASAZUMI
IPC分类号： C30B19/00 , C30B29/28 , H01F10/24 , H01F41/28
摘要： PURPOSE:To reduce film defects with Pt as nuclei by introducing an inert gas such as Ar, He, N2 or CO2 into a furnace for growing a Bi substd. garnet film. CONSTITUTION:An inert gas such as Ar, He, Ne or CO2 is allowed to flow in a growth furnace at a prescribed flow rate and a Pt crucible filled with a prescribed amt. of molten starting material is set in the furnace. A Bi substd. garnet film is grown on a substrate of Ga-Mg-Zr substd. Gd3Ga5O12, etc., by a liq. phase epitaxial growth method at a prescribed growth temp. and a magneto-optical garnet crystal having a low Pt content is obtd.

52. 发明专利

JPS62101012A MAGNETOSTATIC-WAVE MICROWAVE ELEMENT 失效
公开(公告)号：JPS62101012A
公开(公告)日：1987-05-11
申请号：JP23858685
申请日：1985-10-26
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO , TAKEDA SHIGERU
IPC分类号： H01F41/28 , C30B29/28 , H01P1/215 , H01P7/00
摘要： PURPOSE:To obtain a magnetostatic-wave microwave element using a YIG single crystal thin-film containing Pb for simultaneously making a change into a thick-film and low DELTAH (ferromagnetic resonance half-value width) compatible by mixing Pb contained in flux mainly comprising PbO-B2O3 into the single crystal film. CONSTITUTION:A gadolinium.gallium.garnet single crystal substrate is used, a single crystal film mainly comprising yttrium.iron.garnet is grown on the substrate through a liquid-phase epitaxial method while Pb contained in flux mainly comprising PbO-B2O3 is mixed into the single crystal film, and an LPE single crystal film in which the content of Pb is kept within a range of 1wt% or 2.25wt%, the lattice constant of the substrate is made larger than that of the formed single crystal film and the difference of these lattice constants is brought to 9X10 Angstrom or less is employed. According to this invention, a YIG thick-film having low DELTAH can be formed by positively utilizing the mixing of Pb into flux even when No.5 additional element is not used actively with the exception of Fe, Y, Pb and B, thus manufacturing a magnetostatic-wave microwave element having low loss by employing the YIG thick-film.

53. 发明专利

JPH05105580A PRODUCTION OF SINGLE CRYSTAL AND SINGLE CRYSTAL PRODUCING DEVICE 失效
公开(公告)号：JPH05105580A
公开(公告)日：1993-04-27
申请号：JP27363491
申请日：1991-10-22
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO , ITO KOHEI , SATO MASAZUMI , ABE TORU
IPC分类号： C30B11/00 , C30B19/00 , C30B19/06
摘要： PURPOSE:To provide a method for preventing melting of a crucible made of a noble metal Pt for holding a melt for growth, in order to solve problems when a garnet single crystal or an oxide crystal such as a ferrite single crystal is grown by a liquid phase epitaxial method or Bridgeman method. CONSTITUTION:In the method for solidifying and growing a single crystal from a melt 3 heat-molten an oxide raw material filled in a crucible 1 made of a noble metal Pt, the objective producing method is characterized in that an electrode 2 is dipped in a melt and the electric current between the crucible 1 and the electrode dipped in the melt 3 is kept nearly to 0, and a producing device suitable therefor.

54. 发明专利

JPH0462357B2 失效
公开(公告)号：JPH0462357B2
公开(公告)日：1992-10-06
申请号：JP17506785
申请日：1985-08-09
申请人： HITACHI METALS LTD
发明人： TAKEDA SHIGERU , ITAKURA TOSHIO , KUROSAWA HISAO , NAKAJIMA KO
IPC分类号： G01R33/20 , G01N24/10

55. 发明专利

JPH04137716A MANUFACTURE OF BI REPLACING MAGNETIC GARNET CRYSTAL 失效
公开(公告)号：JPH04137716A
公开(公告)日：1992-05-12
申请号：JP25970190
申请日：1990-09-28
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO
IPC分类号： H01F41/22 , H01F41/28
摘要： PURPOSE:To remarkably reduce the number of defective films and sharply improve the yield rate in manufacturing by adding vibration when bringing up Bi replacing magnetic garnet crystals by liquid phase epitaxial method. CONSTITUTION:A Pt crucible filled with material is installed inside the upbringing furnace in atmosphere, and the growth temperature and the growth speed are fixed to approximately 772 deg.C and approximately 0.35mum/min., respectively, and a garnet film is brought up. At this time, the vibration of approximately 20Hz in frequency is added to a substrate fixing jig or a solution for upbringing.

56. 发明专利

JPS58215625A Working method of crystal 失效
标题翻译：晶体工作方法
公开(公告)号：JPS58215625A
公开(公告)日：1983-12-15
申请号：JP9827282
申请日：1982-06-08
申请人： Hitachi Metals Ltd
发明人： NOJIYOU YASUO , KUROSAWA HISAO
IPC分类号： C30B33/00 , G02F1/00 , G02F1/11
CPC分类号： G02F1/0018
摘要： PURPOSE:To recognize the relation between the cutting position of crystal and the position of a wafer before work by forming the 2nd orientation flat in a different direction from the 1st orientation flat and varying its width continuously in a crystal growth axis direction. CONSTITUTION:The shoulder part 7 and part Tail 8 of LiTaO3 single crystal 6 are cut in an X-axis direction to form a boule 9. A specific flank of this boule 9 is ground by a specific extent (width l3) to form the 1st orientation flat 2. Then, the boule 9 is rotated around its center axis by a specific angle and only the end part of the part Tail 8 is installed at specific height and ground more than the 1st orientation flat 2 to form the 2nd orientation flat 5. Then, the body boule 9 having those flats 2 and 5 is cut to a specific thickness at right angles to an X axis. The widths l1 and l2 of the orientation flat 5 of the wafter are not equal, so the correspondence to the position of the crystal is obtained by its length. Thus, the relation between the cutting position of the crystal and the position of the wafer before the work is known.
摘要翻译：目的：通过在与第一取向平面不同的方向上形成第二取向平面并且在晶体生长轴方向上连续地改变其宽度来识别晶体的切割位置与晶片的位置之间的关系。构成：将LiTaO3单晶6的肩部7和部分尾部8沿X轴方向切割以形成圆棒9.将该毛坯9的特定侧面以特定程度（宽度13）研磨以形成第1 定向平面2.然后，将毛坯9围绕其中心轴线旋转一定角度，并且仅将部件尾部8的端部安装在特定高度并且比第一定向平面2多的地面以形成第二定向平面5 然后，将具有这些平板2和5的主体坯料9切割成与X轴成直角的特定厚度。散片的定向平面5的宽度l1和l2不相等，因此与晶体位置的对应关系是通过其长度获得的。因此，已知晶体的切割位置与工件前的晶片的位置之间的关系。

57. 发明专利

JPH1186223A MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD 失效
公开(公告)号：JPH1186223A
公开(公告)日：1999-03-30
申请号：JP23790897
申请日：1997-09-03
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To obtain a highly reliable head having a highly corrosion-resistive conductive lead by providing the conductive lead of WCr alloy, specifying a composition ratio of W and Cr, and preferably forming an alloy film including mainly metallic Cr or Cr as an undercoat film of the conductive lead consisting of the WCr alloy. SOLUTION: The composition ratio of a conductive lead 9 of WCr alloy is 2-50 at.% of Cr and the remaining at.% of W. A content of the Cr is suitably selected with an aim to increase corrosion resistance and adhesion. The corrosion resistance cannot be expected to be improved so much if the content of the Cr is smaller than 2 at.%. An advantage of a small specific resistance of the W cannot be utilized fully if the content of the Cr exceeds 50 at.%. Impurities generally mixed in the W and Cr are allowed so long as the specific resistance of the WCr alloy is not increased. An alloy film including mainly metallic Cr or Cr as an undercoat film 2 of the conductive lead 9 improves the adhesion.

58. 发明专利

JPH10288800A PRODUCTION OF NONLINEAR OPTICAL SINGLE CRYSTAL 失效
公开(公告)号：JPH10288800A
公开(公告)日：1998-10-27
申请号：JP9861097
申请日：1997-04-16
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO , MAKIO SATOSHI
IPC分类号： G02F1/35 , C30B29/22 , C30B31/00 , C30B33/02 , G02F1/355
摘要： PROBLEM TO BE SOLVED: To make it possible to suppress the fluctuation in wavelength conversion output, such as SH(second harmonic) output, etc., by subjecting a nonlinear optical single crystal to machining, then to a heat treatment. SOLUTION: The cesium lithium borate nonlinear optical single crystal, etc., which are expressed by CsLiB6 O10 and are liable to generate work strains is subjected to the heat treatment after machining and/or optical polishing, etc. The execution of the heat treatment right after the machining leads to the prevention of cracking and further, the heat treatment after the optical polishing is effective as well. The heat treatment after the optical polishing leads to the change in the properties of the polished surface in some cases and the execution of the heat treatment in any of an oxygen atmosphere, inert gaseous atmosphere or a mixed atmosphere composed of oxygen and inert gas. The heat treatment is poor in the effect of relieving strains in the case of

59. 发明专利

JPH09134510A MAGNETORESISTIVE MAGNETIC HEAD AND ITS MANUFACTURE 失效
公开(公告)号：JPH09134510A
公开(公告)日：1997-05-20
申请号：JP31160495
申请日：1995-11-06
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO , MITSUMATA CHIHARU , KOBAYASHI TOSHIO , NOGUCHI SHIN
IPC分类号： G01R33/09 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To improve an exchange coupling magnetic field, restrict Barkhausen noises and improve reproduction performance, by controlling an orientation degree of NiFe and NiMn when an antiferromagnetic exchange coupling film is used. SOLUTION: A magnetoresistive element of the magnetic head is constituted of a ferromagnetic layer and antiferromagnetic layers. In the magnetic head, the antiferromagnetic layer in a face-centered cubic structure (fcc structure) is layered immediately on the fcc ferromagnetic layer, and the antiferromagnetic layer of a face-centered tetragonal structure (fct structure) is further layered. The antiferromagnetic layer of the fcc structure is formed in the vicinity of an interface of the ferromagnetic layer and antiferromagnetic layer. The interface of the ferromagnetic layer and antiferromagnetic layer maintains continuity owing to the epitaxial growth. The ferromagnetic layer is formed of an NiFe alloy, while the antiferromagnetic layers are formed of an NiMn alloy.

60. 发明专利

JPH07321386A MANUFACTURE OF MAGNETORESISTANCE EFFECT ELEMENT 失效
公开(公告)号：JPH07321386A
公开(公告)日：1995-12-08
申请号：JP10956994
申请日：1994-05-24
申请人： HITACHI METALS LTD
发明人： KUROSAWA HISAO , TEJIMA HIROYUKI , MITSUMATA CHIHARU
IPC分类号： G01R33/09 , G11B5/39 , H01L43/12
摘要： PURPOSE:To increase the rate of change in electric resistance of a ferromagnetic thin film (single layer film of NiFe) by particularizing the amount of O2 contained in the ferromagnetic thin film having a magnetoresistance effect formed by sputtering method. CONSTITUTION:After venting a substrate 28 (30) in a sample exchange chamber 10, the substrate is brought to a film forming chamber 12 through a door valve 14 and is fixed at the position opposite to a target 24. At this time, the film forming chamber 12 is already vented almost the same degree as the sample exchange chamber's, so that atmospheric air does not enter directly the film forming chamber 12 even by opening the door valve. After forming a single layer thin film of NiFe on the substrate 28 (30), the substrate 28 (30) is returned to a sample exchange chamber 10 through the door valve 14 again, the door valve is closed, then the simple exchange chamber 10 is recovered to the atmospheric pressure by a valve 36, and the substrate 28 (30) with a film formed is taken out. Moreover, the film forming chamber 12 is directly exhausted by a cryopump 20, so that water vapor and the like can be fully removed, the possibility of mixing-in of O2 can be restricted to a minimum, and the content of O2 in ferromagnetic thin film can be made less than 150ppm.

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