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51. 发明专利

JPH0982978A SEMICONDUCTOR DEVICE AND LIQUID-CRYSTAL DISPLAY USING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0982978A
公开(公告)日：1997-03-28
申请号：JP24122795
申请日：1995-09-20
申请人： HITACHI LTD
发明人： TANAKA TAKESHI , MIKAMI YOSHIAKI
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/739 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To simplify the process of circuit formation, and to reduce power consumption by mounting unipolar and bipolar semiconductor elements in a peripheral circuit region. SOLUTION: In a reverse stagger type TFT formed on a glass substrate 10, gate electrodes 113, a gate insulating film 140, source electrodes 137, drain electrodes 138, semiconductor films 110, N regions 135 and P regions 136 are laminated successively. 110c represents channel regions induced in the semiconductor films. Both polar high-impurity concentration regions, the N regions 135 and the P regions 136, are formed even in both TFTs. However, only parts of the N regions 135 are superposed on the gate electrode and the P regions are placed on the outside of the gate electrode 113 in the unipolar TFT T2 though both the N regions 135 and the P regions 136 are formed onto the gate electrode in the bipolar TFT T1. Accordingly, the bipolar TFT and the unipolar TFT are discriminated singly only by the positional relationship of the gate electrodes and high impurity-concentration regions.

52. 发明专利

JPH098311A FABRICATION AND STRUCTURE OF THIN FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH098311A
公开(公告)日：1997-01-10
申请号：JP15434895
申请日：1995-06-21
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , TANAKA TAKESHI
IPC分类号： H01L29/786
摘要： PURPOSE: To decrease the number of fabrication steps for reversely staggered thin film transistor having an etching stopper layer. CONSTITUTION: A Cr gate electrode 2, a silicon nitride gate insulation film 3, a collectively patterned insular active layer 8 and an etching stopper layer 9 are formed on a glass substrate 1. An n-type amorphous silicon 7 is then deposited thereon and eventually removed by anisotropic etching except the side wall of active layer 8 and etching stopper layer 9 thus forming an ohmic contact layer 10. Subsequently, source-drain electrodes 11, 12 are formed and the residual n-type amorphous silicon is removed tram between the source-drain electrodes by isotropic etching before deposition of a protective film 13.

53. 发明专利

JPH08339972A MANUFACTURE OF THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY USING IT 失效
公开(公告)号：JPH08339972A
公开(公告)日：1996-12-24
申请号：JP14709195
申请日：1995-06-14
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , TANAKA TAKESHI
IPC分类号： H01L21/28 , H01L21/283 , H01L21/336 , H01L29/786
摘要： PURPOSE: To prevent the surface roughing of an active layer during laser irradiation and degradation in crystal quality associated therewith, by forming on a semiconductor in contact with a gate insulating film, another semiconductor the coefficient of laser light absorption of which is lower than that of the semiconductor, and the melting point of which is higher than that of the semiconductor, and irradiating it with laser. CONSTITUTION: ACr gate electrode 2, a silicon nitride film 3 as a gate insulating film, an amorphous silicon film 7 to be an active layer, and a microcrystalline silicon film 5 are continuously deposited on a glass substrate 1. Excimer laser of XeCl is applied in vacuum, and the amorphous silicon film is thereby crystallized to form a polycrystalline silicon film 6. Here, laser is absorbed only 10% or so if the thickness of the microcrystalline silicon film 5 is adjusted so that its coefficient of laser light absorption is lower than that of the amorphous silicon. Further, since the melting point of the microcrystalline silicon film is higher than that of the amorphous silicon film, the shape of the microcrystalline silicon film does not change, and the surface roughing of the polycrystalline silicon 6 is reduced. As a result it is possible to prevent degradation in crystal quality.

54. 发明专利

JPH07263698A THIN FILM TRANSISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH07263698A
公开(公告)日：1995-10-13
申请号：JP4680394
申请日：1994-03-17
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , TANAKA TAKESHI
IPC分类号： H01L21/306 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a thin film transistor whose active layer is very thinned, by decreasing the dry etching rate to an N-type semiconductor, and enabling selective etching elimination of an N-type semiconductor on the active layer. CONSTITUTION:On a glass substrate 1 the following are formed; a Cr gate electrode 2, gate insulating silicon nitride 3, an active layer 4 composed of amorphous or polycrystalline silicon, P-type nanocrystalline silicon 5, N-type nanocrystalline silicon 6, and source-drain electrodes 10, 11. An ohmic contact layer 12 is formed by selectively dry-etching the N-type nanocrystalline silicon.

55. 发明专利

JPH0730115A THIN FILM TRANSISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH0730115A
公开(公告)日：1995-01-31
申请号：JP17515493
申请日：1993-07-15
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , TANAKA TAKESHI , OGAWA KAZUHIRO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786
摘要： PURPOSE:To provide a method of manufacturing a thin film transistor with excellent characteristics by utilizing the nature of energy beam such as laser, and the structure of thin film transistor having excellent characteristics, and also to provide a liquid crystal display device with a thin film transistor whose display quality is excellent by the use of the thin film transistor. CONSTITUTION:Relating to a thin film transistor containing, formed on a substrate, a gate electrode 2, gate insulating film 3 an active layer consisting of a semiconductor, an ohmic contact layer 12 formed by doping a semiconductor with impurities, a source electrode 10, and a drain electrode 11, the ohmic contact layer 12 is forced to overflow from the source electrode 10 and the drain electrode 11, and the portion coming out is crystallized.

56. 发明专利

JPH0345499B2 失效
公开(公告)号：JPH0345499B2
公开(公告)日：1991-07-11
申请号：JP19231383
申请日：1983-10-17
申请人： HITACHI LTD
发明人： ATOBE HIDEYUKI , MYAZAKI TERUNOBU , TANAKA TAKESHI
IPC分类号： H01H50/08

57. 发明专利

JPH0259577B2 失效
公开(公告)号：JPH0259577B2
公开(公告)日：1990-12-12
申请号：JP14106783
申请日：1983-08-03
申请人： HITACHI LTD
发明人： ATOBE HIDEYUKI , MYAZAKI TERUNOBU , TANAKA TAKESHI
IPC分类号： H01H36/00 , H01H50/08

58. 发明专利

JPH0249666B2 失效
公开(公告)号：JPH0249666B2
公开(公告)日：1990-10-30
申请号：JP14106683
申请日：1983-08-03
申请人： HITACHI LTD
发明人： ATOBE HIDEYUKI , NAGAYAMA TOORU , MYAZAKI TERUNOBU , TANAKA TAKESHI
IPC分类号： G01R31/00 , G01R31/02 , H01H45/08 , H02H3/04

59. 发明专利

JPS6444844A FILM FORMING MONITOR 失效
公开(公告)号：JPS6444844A
公开(公告)日：1989-02-17
申请号：JP20172787
申请日：1987-08-14
申请人： HITACHI LTD
发明人： MIYAUCHI AKIHIRO , TANAKA TAKESHI , ONOSE HIDEKATSU , OGAMI MICHIO
IPC分类号： G01R33/12 , G01N27/72
摘要： PURPOSE:To observe the crystallinity and magnetic characteristic of a formed film on the spot at the time of formation, by applying a magnetic field to a substrate and measuring the change of the flux transmitting through the formed film by a superconducting quantum interference meter. CONSTITUTION:A growth chamber 21 is evacuated by an oil diffusion pump 22 and a rotary pump 23. A substrate 2 is made of a heat resistant resin and fixed to a substrate holder 1 to be heated by an infrared lamp 3. Cobalt/ chromium 31 being a vapor deposition material is set to a vapor deposition boat 32 and evaporated by resistance heating to be formed into a membrane on the substrate 2. The magnetic field generated by a magnetic field generating coil 41 is uniformly applied to the substrate and transmits through the substrate 2 to be monitored by a superconducting quantum interference meter 11 cooled by a liquid nitrogen shroud 12. The signal from the interference meter 11 is inputted to a microcomputer 51 to be analyzed. By this method, the crystallinity and magnetic characteristic of the film at the time of formation can be monitored on the spot and, therefore, the characteristic of the formed film is enhanced and a film forming process can be elucidated.

60. 发明专利

JPS63226023A EUTECTIC ALLOY SEMICONDUCTOR SUPERLATTICE STRUCTURE 失效
公开(公告)号：JPS63226023A
公开(公告)日：1988-09-20
申请号：JP5884287
申请日：1987-03-16
申请人： HITACHI LTD
发明人： ONOSE HIDEKATSU , TANAKA TAKESHI , OGAMI MICHIO
IPC分类号： H01L21/20 , H01L21/324
摘要： PURPOSE:To make it possible to form the semiconductor superlattice structure of the prescribed thickness by controlling the moving speed and the temperature condition of the source of fusion by a method wherein the solution of eutectic composition is formed by fusing the prescribed narrow band only, and the region to be crystallized is formed into the regular shape eutectic texture such as a layer-like or pole-like eutectic and the like. CONSTITUTION:The substrate 1, on which an alloy thin film 2 and a capping film 5 are formed, is retained in a narrow-band melting device, the interior of the melting device is replaces with helium gas or nitrogen gas. Subsequently, an alloy thin film 2, which is maintained at the temperature TL (such as room temperature) is fused by heating it to the temperature TH (880 deg.C for example) which is higher than the eutectic temperature TE (865 deg.C) through the capping film 5, and it is formed into the Ge-GaAs alloy liquid solution of eutectic composition E. The temperature of the above-mentioned material drops by the movement of the source of fusion, single crystal is grown, and a regular shape eutectic texture, in which a Ge single-crystal layer 42 and a GaAs single crystal layer 41 are alternately superposed in parallel with the substrate 1, is formed. Various kinds of systems are enumerated as the composition with which the regular shape eutectic texture can be obtained besides Si-Gap, GaAs- ZuSe, Ge-AlAs and the like.

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