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51. 发明专利

JP2006004961A Semiconductor module 审中-公开
标题翻译：半导体模块
公开(公告)号：JP2006004961A
公开(公告)日：2006-01-05
申请号：JP2004176338
申请日：2004-06-15
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANBA AKIHIRO , KAMIMURA NORITAKA
IPC分类号： H01L23/473 , H01L23/36
CPC分类号： H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a module structure and a mounting structure with low heat resistance, low cost and high reliability in a power semiconductor module of a structure where cooling water is directly applied to a metal base so as to cool it. SOLUTION: A metal frame with large rigidity is arranged at the periphery of an insulating substrate bonding face so that the metal frame is closely brought into contact with the metal base. In the structure, the metal frame, the metal base and a cabinet are fastened together and cooling water can securely be sealed. Since the metal base is annealed to be thinner than an insulating substrate with circuit pattern, rigidity is small and it is soft. Since the metal base is deformed in the structure, distortion of the insulating substrate bonding layer is relieved and reliability becomes high. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供在将冷却水直接施加到金属基底以冷却它的结构的功率半导体模块中提供具有低耐热性，低成本和高可靠性的模块结构和安装结构。解决方案：在绝缘性基板接合面的周围配置有刚性高的金属框架，使得金属框架与金属基体紧密接触。在该结构中，将金属框架，金属基座和机柜固定在一起，并且可靠地密封冷却水。由于金属基体被退火成比具有电路图案的绝缘基板更薄，所以刚性小并且柔软。由于金属基体在结构中变形，绝缘基板接合层的变形缓和，可靠性变高。版权所有（C）2006，JPO＆NCIPI

52. 发明专利

JP2004235175A Power semiconductor module 有权
公开(公告)号：JP2004235175A
公开(公告)日：2004-08-19
申请号：JP2003018178
申请日：2003-01-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANBA AKIHIRO , KAMIMURA NORITAKA , NAKAMURA TAKAYOSHI , SAITO RYUICHI
IPC分类号： H01L23/36
CPC分类号： H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a structure having a high reliability in the structure in which a linear fin is mounted on a metallic base for a power semiconductor. SOLUTION: In the structure of a power semiconductor module with a power semiconductor element switching a current, an insulating substrate with a circuit pattern on which the element is attached, and the metallic base 101 on which the substrate is attached; the linear type fin 114 is formed in a region under the substrate on the opposed surface of the substrate attached surface of the base 101, and a length in the stripe direction of the fin is formed in the length or less in the vertical direction in the shape of the substrate. Accordingly, even when the fin 114 is formed to the base, the distortion of solder under the substrate is not made larger than a plate with no fin because the fin direction of the fin and the longitudinal direction of the substrate are arranged vertically. COPYRIGHT: (C)2004,JPO&NCIPI

53. 发明专利

JP2004200333A Packaging structure of water cooling power semiconductor module 审中-公开
公开(公告)号：JP2004200333A
公开(公告)日：2004-07-15
申请号：JP2002366015
申请日：2002-12-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： INOUE KOICHI , TANBA AKIHIRO , NAKAMURA TAKAYOSHI , SASAKI MASAKI , SAITO RYUICHI
IPC分类号： H01L23/473
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a structure for effectively guiding heat produced in a power semiconductor element in a power semiconductor module of a direct water cooling structure. SOLUTION: The packaging structure of the water cooling power semiconductor module is adapted such that in the packaging structure of the water cooling power semiconductor module a plurality of plate shaped fins integral with a metal base are formed on an outer wall of the metal base. The structure is further adapted such that a distance between the centers of the adjacent plate shaped fins on a cross section of the plate shaped fins perpendicular to the face of the metal base and the faces of the plate shaped fins is more increased as they go away from the metal base, such that the plate shaped fins are disposed substantially radially around the power semiconductor element, and furthermore an interval between the counterfaces of the plate shaped fins is kept unchanged or narrowed as the fins go from a side of the fins close to the metal base, i.e., from the root of the fins to a side of the fins far away from the metal base, i.e., tip ends of the fins. Heat dissipation is hereby effectively achieved. COPYRIGHT: (C)2004,JPO&NCIPI

54. 发明专利

JP2003116282A WATER-COOLED INVERTER 审中-公开
公开(公告)号：JP2003116282A
公开(公告)日：2003-04-18
申请号：JP2001311562
申请日：2001-10-09
申请人： HITACHI LTD
发明人： TANBA AKIHIRO , NAKAMURA TAKAYOSHI , SAITO RYUICHI , MONMA NAOHIRO
IPC分类号： H01L23/40 , H01L23/473 , H01L25/07 , H01L25/18 , H02M7/48 , H05K7/20
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable water-cooled inverter structure in which the temperature of a power semiconductor module and a control circuit board can be lowered. SOLUTION: A plurality of shallow recesses and deep recesses are formed in a housing, and the bottom face of a power semiconductor module is bonded into the shallow recess to form a water channel for cooling the power semiconductor module directly. Since the current velocity of cooling water in the shallow recess is high, cooling efficiency can be enhanced and pressure loss can be reduced in a deep channel formed by the deep recess. Since a plurality of recesses are provided, the power semiconductor module can be reduced in size, and since a plurality of power semiconductor modules can be arranged, reliability can be enhanced. The temperature of a control circuit can be lowered by disposing a control board below the water channel thereby isolating it from the power semiconductor module. Since the temperature of the power semiconductor module and the control circuit board can be lowered, a highly reliable water-cooled inverter structure can be realized.

55. 发明专利

JP2003092484A LIQUID-COOLING CIRCUIT DEVICE AND MANUFACTURING METHOD FOR CIRCUIT ELEMENT DEVICE 审中-公开
公开(公告)号：JP2003092484A
公开(公告)日：2003-03-28
申请号：JP2001282543
申请日：2001-09-18
申请人： HITACHI LTD
发明人： YAMADA KAZUJI , TANBA AKIHIRO , NAKAMURA TAKAYOSHI , SAITO RYUICHI , OGAWA TOSHIO , OKAMURA HISANOBU
IPC分类号： B23K20/12 , B23K101/14 , H01L23/40 , H01L23/473 , H01L25/11 , H05K7/20
摘要： PROBLEM TO BE SOLVED: To miniaturize a module substrate while preventing liquid on a circuit element mounted on the module substrate. SOLUTION: A device is provided with a module for which the circuit element 1 is attached to the module substrate 2, a circuit case 5 housing the module, a cooling case 7 through which cooling liquid passes in contact with a back surface 15 of the module substrate, and a module supporting plate 3 supporting a plurality of the modules. The module substrate 2 is put in an opening of the module supporting plate 3, and an opening edge and the module substrate are joined without a clearance by friction diffusion welding. The module supporting plate 3 is attached to the circuit case 5 so as to close the opening 6 of the circuit case 5 from the outer side thereof, and the cooling case 7 is attached to the circuit case 5 so as to face the back surface of the module supporting plate 3.

56. 发明专利

JP2001085613A TRANSFER MOLD POWER MODULE 失效
公开(公告)号：JP2001085613A
公开(公告)日：2001-03-30
申请号：JP25840099
申请日：1999-09-13
申请人： HITACHI LTD
发明人： TANBA AKIHIRO , YAMADA KAZUJI
IPC分类号： H01L25/07 , H01L21/56 , H01L23/29 , H01L23/31 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To arrange a peripheral circuit on a power circuit part through transfer mold by incorporating a gate drive IC which incorporates the control power supply 3 circuit and the level shift circuit of an IGBT and can perform control at the ground level. SOLUTION: A pattern 30 for mounting a high side IGBT and a pattern 31 for mounting a low side IGBT are formed on the opposite sides of an N wiring 33 and a shunt resistor mounting pattern 34 for detecting current is formed on the N wiring 33 wherein a lead frame pattern 35 connects the gate and emitter of the high side IGBT. Similarly, patterns 36, 37 connect the gate and emitter of the low side IGBT, respectively, and the patterns 30, 31 are connected with tie bars on the outer circumference of the lead frame at 32, 38, 39 in order to prevent one point support. Since a sufficient distance can be secured from a heat dissipation fin when the lead frame is bent upward in sealing resin, reliability is enhanced.

57. 发明专利

JP2000068446A POWER SEMICONDUCTOR MODULE 失效
公开(公告)号：JP2000068446A
公开(公告)日：2000-03-03
申请号：JP23809498
申请日：1998-08-25
申请人： HITACHI LTD
发明人： SASAKI MASAKI , TANBA AKIHIRO , SUZUKI KAZUHIRO , SONOBE YUKIO
IPC分类号： H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To reduce stresses caused in solder function section of electrodes due to the thermal expansion of silicone gel by providing inside a cover plate a protrusion retaining an upper control board downward. SOLUTION: This power semiconductor module comprises a power circuit board 16 housed in a lower space of a case 23, a control circuit board 13 housed in an upper space, inner wiring lead pins 15 wired between boards, a sealing resin 12 filled in the case 23, and a cover plate 10 disposed on an upper control board 13. Inside the cover plate 10 a protrusion 11 is provided for pressing downward a control circuit board 13 from above side, thereby preventing the control circuit board from shifting up. The cover 13 is made of the same material as the case 23, a silicone gel pouring hole 24 is sufficiently wide to provide escape for the silicone gel 12 being thermally expanded. This fully suppresses the control circuit printed board 13 from shifting up and relaxes a stress caused in solder function.

58. 发明专利

JPH1116937A TERMINAL STRUCTURE OF POWER SEMICONDUCTOR MODULE 失效
公开(公告)号：JPH1116937A
公开(公告)日：1999-01-22
申请号：JP16687197
申请日：1997-06-24
申请人： HITACHI LTD
发明人： SONOBE YUKIO , TANBA AKIHIRO , SAITO RYUICHI , SHIGEMURA TATSUYA , SASAKI MASAKI , SEKINE SHIGEKI , ISHIKAWA KATSUMI
IPC分类号： H01L25/07 , H01L21/60 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To enable the stable feed of a case and to make it possible to obtain a low-cost product, a power semiconductor module, by a method wherein a control terminal is formed into a PM and IPM combination structure or a terminal structure capable of being interchanged and a package case is used in common as the PM and IPM combination control terminal. SOLUTION: A control terminal 3a is molded integrally with a base substrate 1 and a main terminal 2 with a resin and a package case 6a is formed. The terminal 3a is formed into a terminal structure, wherein the sizes between terminals for the connection of modules with the outside are met the same specification, the intervals between the terminals are widened in the wall surfaces of the case, wherein the terminals are resin-sealed, the surfaces of the terminals are made to expose in the inside of the case and the terminals are formed as bonding pads 4 for power module(PM) use. Moreover, each one part of the said terminals are vertically bent and terminals 5a for connecting with a control circuit board 12 for intelligent power module(IPM) use are formed. Thereby, it is contrived to use the case in common as the PM and IPM combination control terminal 3a.

59. 发明专利

JPH09283681A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09283681A
公开(公告)日：1997-10-31
申请号：JP9380296
申请日：1996-04-16
申请人： HITACHI LTD
发明人： KITANO MAKOTO , TERASAKI TAKESHI , KUMAZAWA TETSUO , TANBA AKIHIRO
IPC分类号： H01L25/07 , H01L21/56 , H01L23/48 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To enable resin sealing according to a transfer molding process and to improve sealing reliability by providing a non-through-tapped-hole on the tip part of an external terminal plate so that the surface of the external terminal provided with the tapped hole is not sealed with a resin and is exposed to the outside. SOLUTION: A semiconductor device 1 is mounted via an insulating plate 2 on a heat sink 3 provided with semiconductor device attaching holes 9 therein. An internal wiring board 4 is provided on the insulating plate 2 and electrodes of the semiconductor device 1 are electrically connected to the internal wiring board 4 with wires 5. Further, an external terminal plate 6 is connected to the insulating plate 2. In particular, the tip of the external terminal plate 6 is bent in the direction parallel to the heat sink 3 and a nut 7 with a tapped hole is joined thereto to form a nonthrough-tapped-hole. The nut 7 with the tapped hole is exposed out of a sealing resin 8 only at the upper surface thereof and this exposed surface coincides with the surface of the sealing resin 8. Thus, resin sealing according to a transfer molding process is enabled so that productivity can be improved.

60. 发明专利

JPH09275155A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09275155A
公开(公告)日：1997-10-21
申请号：JP8121996
申请日：1996-04-03
申请人： HITACHI LTD
发明人： KITANO MAKOTO , TERASAKI TAKESHI , KUMAZAWA TETSUO , TANBA AKIHIRO
IPC分类号： H01L23/28 , H01L23/02 , H01L23/12 , H01L25/04 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To improve sealing reliability and obtain structure excellent in productivity, by making the surface of a trench which is adjacent to a package center, vertical to a base surface, and making the angle between the surface distant from the package center and the base surface obtuse, concerning the sectional form of a trench formed in the base. SOLUTION: A case fixing trench 8 is formed in a base 6, and the edge of the case 5 is fitted in the trench. As to the sectional form of the trench, the surface of the trench which is adjacent to a package center is vertical to the base surface, and the angle between the surface distant from the package center and the base surface is obtuse. The trench is formed in a closed loop type on the base surface. The tip of the edge of the case 5 has the same form as the case fixing trench 8. The case 5 is bonded to the base 6 by using adhesive agent 7. Thereby the internal surface of the case comes closely into contact with the vertical surface of the trench, on account of contaction of the case, and sealing reliability is improved.

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