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    • 54. 发明专利
    • ELECTRON BEAM LITHOGRAPHY SYSTEM
    • JPH0582426A
    • 1993-04-02
    • JP24387291
    • 1991-09-25
    • HITACHI LTD
    • ITO HIROYUKISASAKI MINORU
    • G03F7/20H01J37/304H01L21/027H01L21/30
    • PURPOSE:To accurately and efficiently correct the drift of the emitting position of an electron beam by calculating the drift characteristic formula of the position of the electron beam by using a plurality of positional drift values and correcting an electron beam deflecting signal based on the characteristic formula. CONSTITUTION:A sample 100 is irradiated with an electron beam 6 lead out from a cathode 1 after the beam 6 is converged through an electronic lens group 3. A control computer 200 positions a sample table 7 by driving a sample table driving mechanism 8 by sending a sample table position signal to a sample table position control circuit 17 through a deflection correction circuit 12. A reference mark is provided on the table 7 and the drift of the plotting position of the beam 6 is measured from the reference mark. The reference mark is scanned with a beam deflector 4 and the reflected electron signal is detected by means of reflected electron detector 5 and stored in a drift memory 15 through a signal processing circuit 13, and drift calculation circuit 14. A drift characteristic calculation circuit 16 calculates a drift characteristic formula by using the positional drift value stored in the memory 15 and adds drift correction to an electron beam deflecting signal.
    • 55. 发明专利
    • ELECTRON BEAM LITHOGRAPHY EQUIPMENT AND LITHOGRAPHY PROCESS
    • JPH04123418A
    • 1992-04-23
    • JP24233590
    • 1990-09-14
    • HITACHI LTD
    • HAYATA YASUNARITODOKORO HIDEOSHINADA HIROYUKIITO HIROYUKI
    • H01L21/027
    • PURPOSE:To prevent deterioration in positional accuracy due to variable electromagnetic fields by providing a lithography equipment with an electron gun for measuring variable electromagnetic fields. CONSTITUTION:This invention is an electron beam lithography equipment comprising an electron gun 11 for measuring variable electromagnetic fields and an electron-position detector 13 in addition to a lithography electron gun 1: for example, the electron gun is a field emission type electron gun whose electron source is TiW. When electrons for measuring variable electromagnetic fields are kept detected by the detector 13, electromagnetic fields, if generated, other than those for deflection appear in the form of a positional deviation of an electron beam and can be sensed immediately. The intensity of electromagnetic fields can be estimated from the amount of positional deviation, and the distribution of intensity can be realized with a plurality of electron beams. Therefore, processing by estimation and correction of influences of these variable electromagnetic fields on lithography electron orbits allow high-accuracy electron beam lithography.
    • 56. 发明专利
    • METHOD FOR PREVENTING ELECTROSTATIC CHARGE IN ELECTRON BEAM LITHOGRAPHY
    • JPH03194915A
    • 1991-08-26
    • JP33345189
    • 1989-12-22
    • HITACHI LTD
    • NAKAMURA KAZUMITSUITO HIROYUKI
    • H01L21/027H01L21/30
    • PURPOSE:To securely eliminate electrostatic charge during electron beam lithography without need of a special device for removing an insulation film and a device for neutralizing charge and without damaging a wafer surface by causing local electrostatic charge by means of radiating an electron beam to a portion of a wafer which is to be unnecessary and causing dielectric breakdown on a part of the wafer periphery. CONSTITUTION:In an electron beam lithographic method for drawing a pattern by radiating an electron beam B2 to a surface of a semiconductor wafer 9 coated with an insulation film 9A, an electron beam B1 is radiated to a portion of the semiconductor wafer 9 which is to be unnecessary prior to electron beam lithography to cause local electrostatic charge, with which dielectric breakdown is caused on a part of the periphery of the wafer 9 where thickness of the insulation film 9A is relatively thinner than that of other parts. The semiconductor wafer 9 and a wafer holding jig 20 is brought into contact with each other via the dielectric breakdown portion to have the semiconductor wafer 9 grounded. For example the electron beam B1 for dielectric breakdown is higher in current density than the electron beam B2 used for electron beam lithography.
    • 57. 发明专利
    • ELECTRON BEAM LITHOGRAPHY EQUIPMENT AND SIMILAR EQUIPMENT
    • JPS62281246A
    • 1987-12-07
    • JP12331986
    • 1986-05-30
    • HITACHI LTD
    • KURODA KATSUHIROITO HIROYUKI
    • H01J37/153H01J37/21H01L21/027H01L27/14
    • PURPOSE:To aim at the automation of operation of a correcting means, by approximating each deflecting distortion factor at the time of performing focus correction by means of each individual focus correcting means with at least a tertiary polynominal, and performing the correction of each focus correcting means with operating conditions found out of tertiary terms. CONSTITUTION:Currents flowing into focus correcting devices 11-13 are set down to I1-I3 each, and first it is set to I1=I2=I3=0, finding deflecting distortions DELTAx0 and DELTAY0, and a tertiary polynominal expression takes palce, then these focus correcting devices 11-13 are individually operated, whereby these currents I1-I3 are expressed with an equivalent polynominal. Each pf deflecting distortion factors (DELTAX1, DELTAY1)-(DELTAX3, DELTAY3) at the time of operating with these currents IqI..3 is found, these factors are averaged. Numerical solution of a linear equation for this mean value and these factors k1I1-k3I3 is found, and these currents flowing into respective focus correcting devices is made to flow as k1I1-k3I3. With this constitution, a focus slip DELTAZ and deflecting distortions (DELTAX0 and DELTAY0) are correctable at the time.
    • 59. 发明专利
    • Processing system of resumption
    • 恢复处理系统
    • JPS6175699A
    • 1986-04-18
    • JP19670584
    • 1984-09-21
    • Hitachi LtdHitachi Software Eng Co Ltd
    • KUMON MASAHIROITO HIROYUKI
    • H04Q3/545
    • H04Q3/54591
    • PURPOSE:To shorten resumption processing time by executing the resumption processing in the 1st step according to contents of a detected trouble in reliance on programs and data which have been transferred to a main memory device in the previous resumption processing and transferring said program and data to the main memory device from a submemory device in the 2nd step so as to execute the resumption processing. CONSTITUTION:By classifying the resumption processing into two steps, the initialization of a main memory device is executed in the 1st step in reliance on programs and data which have been transferred to a main memory device 1, and only the resumption processing in the 2nd step is executed by transferring said programs and data from a submemory device 5 to the main memory device 1, thereby shortening the resumption processing time. Contents of the main memory device 1 is constituted of programs, a memory protect setting area composed of fixed data and a variable data area, while those of a submemory device 5 is constituted of programs and fixed data. They are transferred to the main memory device 1 from the submemory device 2 by the resumption processing of the 2nd step.
    • 目的:通过根据在先前的恢复处理中传送到主存储装置的程序和数据的检测到的故障的内容,在第一步中执行恢复处理来缩短恢复处理时间,并将所述程序和数据传送到 在第二步骤中从主存储器件从子存储器件执行恢复处理。 构成:通过将恢复处理分为两个步骤,主要存储装置的初始化在第一步中依赖于已经传送到主存储装置1的程序和数据,并且仅在第二步骤中进行恢复处理 通过将所述程序和数据从子存储装置5传送到主存储装置1来执行,从而缩短恢复处理时间。 主存储装置1的内容由程序,由固定数据和可变数据区组成的存储器保护设置区域构成,而子存储装置5的内容由程序和固定数据构成。 它们通过第二步的恢复处理从子存储装置2传送到主存储装置1。
    • 60. 发明专利
    • Elevator device
    • 电梯装置
    • JP2012158454A
    • 2012-08-23
    • JP2011020828
    • 2011-02-02
    • Hitachi Building Systems Co LtdHitachi Ltd株式会社日立ビルシステム株式会社日立製作所
    • NISHIBORI TAKAYUKIOGASAWARA TAKESHISAKURAI KENJIITO HIROYUKI
    • B66B11/02H01T23/00
    • PROBLEM TO BE SOLVED: To provide an elevator device which can efficiently supply generated ions to the inner part of a cage and can efficiently instal an ion generator.SOLUTION: In the elevator device including the ion generator 5 generating ions and an air sending means (6) having an air sending function on the upper part of the cage 1 and supplying ions generated by the ion generator into the cage by the air sending function of the air sending means, the ion generator is independently disposed. The elevator device includes an air sending pipe 8 extended from the ion generator and a passage changing member 9 whose one end is connected to the air sending pipe and the opened port provided to the other end of which is disposed between the air sending means and an air sending port formed on the ceiling of the cage and disposed downward with an inclination of 10-20° in a horizontal direction.
    • 要解决的问题:提供一种可以有效地将产生的离子提供到保持架的内部并可以有效地安装离子发生器的电梯装置。 解决方案:在包括产生离子的离子发生器5的电梯装置和在保持架1的上部具有送气功能的送风装置(6),并且由离子发生器产生的离子通过 送气装置的送风功能,离子发生器是独立设置的。 电梯装置包括从离子发生器延伸的送气管8和一端连接到送气管的通道改变构件9,并且设置在另一端的开口设置在送风装置和 送气口形成在保持架的天花板上,并且沿水平方向以10-20°的倾斜向下设置。 版权所有(C)2012,JPO&INPIT