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    • 51. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS62277754A
    • 1987-12-02
    • JP12145286
    • 1986-05-27
    • HITACHI CHEMICAL CO LTD
    • TSUBOMATSU YOSHIAKIFUKUTOMI NAOKIIWASAKI YORIOYASUOKA TAKUYA
    • H01L23/50H01L21/60H01L23/12H01L23/498
    • PURPOSE:To spread a wiring region, to increase density further, to enable dealing-with and to remove the defective slip-off of a lead pin before pulling-up from solder by forming a hole reaching the head section of the lead pin from the surface side of an insulating layer formed on the head section side of the lead pin and being smaller than the head section of the lead pin and conducting the lead pin and the line of the surface of the insulating layer. CONSTITUTION:A hole is bored to a substrate 1 for a wiring board having insulating properties and the plating 2 of a through-hole is shaped, and a lead pin 3 is inserted. An insulating layer 4 is formed to a desired section on the inserting lead-pin head section side of the substrate 1. A metallic plate 6 is incorporated into the insulating layer, a hole is bored to a desired section, and the insulating layer is contact-bonded with a copper foil 5, thus also improving heat dissipation. A section as a via hole 7 in the copper foil 7 is removed through etching, the via hole reaching the head section of the lead pin and having a diameter smaller than the head section of the lead pin is shaped, using the copper foil 5 as a resist, the inside of the hole is conducted, a resist image is formed on the surface, and a desired conductor circuit pattern 8 is shaped. Lastly, a section on which an IC chip 9 is loaded is spot facing- worked up to the metal 6.