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    • 51. 发明专利
    • Magnetic bubble memory device
    • 磁性气泡存储器件
    • JPS5958682A
    • 1984-04-04
    • JP16750282
    • 1982-09-28
    • Fujitsu Ltd
    • MINEMURA TOSHIMITSUTAKAI SHIGERUIIDA TAKENORI
    • G11C11/14
    • G11C11/14
    • PURPOSE:To set optionally a write inhibiting area in software mode, by collating a write area and an inhibiting area, and inhibiting the execution of write instruction when an overlapped part exists on the two areas. CONSTITUTION:When a write instruction is commanded from a CPU1, a write start page address and a data of write page number are read in a bubble memory control section 2, and a data of a sub-page of a magnetic bubble memory device 5 is transferred to an RAM of a sequencer 22 at the same time. The data in a write inhibition designating area in the data transferred in the RAM and the data of write area designated with the write instruction are collated, and when there exists no duplicated part in the two areas, the write is executed. If any duplicated part exists, it is processed as a write inhibiting error, and the execution of the write instruction is inhibited.
    • 目的:在软件模式下,通过整理写入区域和禁止区域可选地设置写入禁止区域,并且在两个区域上存在重叠部分时禁止写入指令的执行。 构成:当从CPU1命令写入指令时,在气泡存储器控制部分2中读取写入起始页地址和写入页码的数据,并且磁性气泡存储器件5的子页面的数据是 同时转移到定序器22的RAM。 在RAM中传送的数据中的写入禁止指定区域中的数据和用写入指令指定的写入区域的数据进行整理,并且当在两个区域中不存在复制部分时,执行写入。 如果存在任何复制部分,则将其作为写禁止错误进行处理,并禁止写指令的执行。
    • 53. 发明专利
    • Magnetic bubble storage device
    • 磁性泡沫储存装置
    • JPS5727483A
    • 1982-02-13
    • JP10122880
    • 1980-07-25
    • Fujitsu Ltd
    • TAKAI SHIGERUIIDA TAKENORI
    • G11C11/14G11C29/00
    • G11C29/86
    • PURPOSE:To reduce the unnecessary time at device switching, by providing RAMs storing bubble stop address to defective memories by the number of devices. CONSTITUTION:When the power supply is applied, initializing is made so that the head of bubbles are at specified position for each loop of magnetic memory devices D1-Dn. When an instruction comes to select the D2, for example, a control circuit 9 selects the designated device D2 and reads out the defective loop data from an RAM10. The access of readout or write-in of the device D2 is made while skipping defective loop, and the access time can be reduced. When this readout or write-in is finished, the bubble stop address of the device D2 is stored in a register L2.
    • 目的:为了减少器件切换所需的时间,通过设备数量为存储器将存储气泡停止地址的RAM提供给有缺陷的存储器。 构成:当施加电源时,进行初始化,使得气泡的头部在磁存储器件D1-Dn的每个环路处于指定位置。 当指令选择D2时,例如,控制电路9选择指定的设备D2,并从RAM10读出有缺陷的环路数据。 在跳过有缺陷的环路时进行设备D2的读出或写入的访问,并且可以减少访问时间。 当该读出或写入完成时,器件D2的气泡停止地址存储在寄存器L2中。