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51. 发明专利

JPH06310967A AMPLIFIER CIRCUIT 失效
公开(公告)号：JPH06310967A
公开(公告)日：1994-11-04
申请号：JP11648393
申请日：1993-04-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ISHIHARA NOBORU , NAKAMURA MAKOTO , ISHIKAWA MASAYUKI , AKAZAWA YUKIO
IPC分类号： H03F3/08 , H03F3/34 , H03G11/00 , H04B10/07 , H04B10/40 , H04B10/50 , H04B10/60 , H04B10/69 , H04B10/04 , H04B10/06
摘要： PURPOSE:To keep a predetermined amplitude to be outputted by combining an automatic threshold level setting circuit and an amplitude limit amplifier circuit keeping its output amplitude constant so as to execute offset compensation and gain compensation against the fluctuation of an input signal level momentarily. CONSTITUTION:A peak level detection latch circuit 20 and a bottom level detection latch circuit 30 extract respectively a peak level and a bottom level of an input signal waveform. Then a potential being a median of the peak level and the bottom level is obtained through resistance division of resistors R1, R2, the potential being the median is given as a threshold level of an amplitude limit amplifier circuit 40, that is, an offset voltage to compensate the offset. The circuit 40 receives the input signal and a threshold voltage to limit the output amplitude. In this case, since a threshold level is set to a median of the input signal wave, the output signal waveform of the circuit 40 keeps a signal of a predetermined amplitude without almost causing waveform distortion and duty fluctuation.

52. 发明专利

JPH06125224A DISTRIBUTED AMPLIFIER 失效
公开(公告)号：JPH06125224A
公开(公告)日：1994-05-06
申请号：JP29795892
申请日：1992-10-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KIMURA SHUNJI , IMAI YUUKI , NAKAMURA MAKOTO
IPC分类号： H03F1/18 , H03F1/42 , H03F3/60
摘要： PURPOSE:To compensate the deterioration of an output impedance and to improve the gain frequency characteristic by connecting a series circuit of a resistor and a capacitor to an output terminating circuit in parallel to a terminating resistor. CONSTITUTION:A drain side terminating circuit 13 is constructed by connecting a series circuit consisting of a capacitor 14 and a resistor 15 in parallel to a terminating resistor 8. The impedance of the circuit 13 has the frequency characteristic to show a low level at the high frequency side and a high level at the low frequency side respectively. Thus the circuit 13 compensates the frequency characteristic of the characteristic impedance of a distribution constant circuit at the drain side. That is, the resistance value of the resistor 8 and a bias circuit 10 are properly set at different levels so that the impedance is increased at the low frequency side. Thus the gain is increased at the low frequency side. At the same time, the resistance value of the resistor 15 is properly set so that the increase of the gain is suppressed at the high frequency side.

53. 发明专利

JPH04304707A DISTRIBUTION AMPLIFIER 失效
公开(公告)号：JPH04304707A
公开(公告)日：1992-10-28
申请号：JP6862191
申请日：1991-04-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： IMAI YUUKI , NAKAMURA MAKOTO
IPC分类号： H03F1/42 , H03F3/60 , H03F3/68 , H03H11/36
摘要： PURPOSE:To realize the broad band distribution amplifier independently of number of output terminals. CONSTITUTION:The amplifier consists of an input section (16), a distributer (18) and an output section (17) employing a transistor(TR), each consists of a transmission line comprising multi-stage of constant-K filters using a capacitance of the TR as its parallel element, one terminal of the transmission line in the input section (16) and the output section (17) is connected to ground in terms of a high frequency via resistors (12), (13) and the other terminal is used for an input terminal (6) or an output terminal (7) of each distribution amplifier and both terminals of the transmission line in the distribution section (18) are connected to ground in terms of high frequency via a resistor (14).

54. 发明专利

JPS58141016A PULSE OPERATING TYPE HIGH POWER AMPLIFYING DEVICE 失效
公开(公告)号：JPS58141016A
公开(公告)日：1983-08-22
申请号：JP2280782
申请日：1982-02-17
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAKAMURA MAKOTO
IPC分类号： H03F3/22 , H03F3/58
摘要： PURPOSE:To reduce the power consumption and size of an HPA, to reduce the heating value of a collector, and to prolong the life of a TWT, by using an anode power source as a pulse type AC power source of high frequency (20- 100kHz) and interrupting the pulse type AC power source by a burst control signal from a TDMA, etc. CONSTITUTION:An electron beam is led out of a cathode 2 heated by a heater power source 1 by the pulse type anode power source 6 and accelerated by a body power source 7 to be collected to a collector 5 by a collector power source 8, so that the kinetic energy of the electron beam is supplied to an input signal to perform amplifying operation. The electron beam is brought under interruption control by controlling the pulse type anode power source 6 by a control signal generator 9. For TDMA communication, its control signal is supplied by the burst control signal of a TDMA device. Normally, prescribed high voltages are applied to the body electrode 4 and collector electrode 5. When, however, the pulse type anode power source 6 is not turned on, the TWT is only applied with a voltage and no beam current flows.

55. 发明专利

JPS53110351A LARGEEPOWER RESISTIVE TERMINATOR 失效
公开(公告)号：JPS53110351A
公开(公告)日：1978-09-27
申请号：JP2512677
申请日：1977-03-08
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU TAKAYA , NAKAMURA MAKOTO
IPC分类号： H01P1/26
摘要： PURPOSE:To realize the practical application of a resistive terminator at a superhigh frequency band as well as to enhance the characteristics, by providing slits to the external conductor of the resistive terminator, bonding an electromagnetic absorber to the outside of the external conductor and then attaching a radiating plate to the outside of the absorber.

56. 发明专利

JPS52130675A MEASURING APPARATUS FOR CARRIER WAVE SIGNAL POWER 失效
公开(公告)号：JPS52130675A
公开(公告)日：1977-11-02
申请号：JP4824176
申请日：1976-04-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU TAKAYA , NAKAMURA MAKOTO , KURAMOTO MINORU
IPC分类号： G01R21/06
摘要： PURPOSE:To measure the peak pwoer without converting the interruption time ratio into power by utilizing the output result from sampling comparison of input interruption carrier wave and basic voltage for comparison.

57. 发明专利

JPS5223243A PROTECTIVE CIRCUIT FOR POWER AMPLIFIER 失效
公开(公告)号：JPS5223243A
公开(公告)日：1977-02-22
申请号：JP9958775
申请日：1975-08-16
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAKAMURA MAKOTO , SAITOU TAKAYA
IPC分类号： H03F1/52 , H03F1/00 , H03F1/42
摘要： PURPOSE:To protect the amplifier when a load deteriorates regardless of the size of the output power.

58. 发明专利

JP2013258238A Electronic apparatus and method for manufacturing the same 有权
标题翻译：电子装置及其制造方法
公开(公告)号：JP2013258238A
公开(公告)日：2013-12-26
申请号：JP2012132758
申请日：2012-06-12
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKAMURA MAKOTO
IPC分类号： H01L23/12
CPC分类号： H01L24/96 , H01L21/568 , H01L2224/04105 , H01L2224/12105 , H01L2224/19 , H01L2224/20 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an electronic apparatus capable of achieving increased fineness, increased density, increased integration or the like, and a method for manufacturing the electronic apparatus.SOLUTION: A method for manufacturing an electronic apparatus includes the steps of: forming a columnar conductor 18 on a supporting substrate 56 and forming a position restricting member 16 restricting the arrangement position of electronic components; disposing electronic components 12a, 12b on the arrangement position restricted by the position restricting member; embedding the electronic components, the position restricting member, and the columnar conductor into a resin layer 10; and removing the supporting substrate.
摘要翻译：要解决的问题：提供一种能够实现提高细度，增加密度，增加集成度等的电子设备及其制造方法。电子设备的制造方法包括以下步骤：形成在支撑基板56上形成柱状导体18，并形成限制电子部件的配置位置的位置限制部件16; 将电子部件12a，12b布置在由位置限制部件限制的布置位置上; 将电子部件，位置限制部件和柱状导体嵌入树脂层10中; 并移除支撑衬底。

59. 发明专利

JP2013044644A Inspection and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的检测和制造方法
公开(公告)号：JP2013044644A
公开(公告)日：2013-03-04
申请号：JP2011182583
申请日：2011-08-24
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKAMURA MAKOTO
IPC分类号： G01N23/223
摘要： PROBLEM TO BE SOLVED: To provide an inspection and manufacturing method of a semiconductor device which enable accurate detection of attachments on a sample surface.SOLUTION: The surface of a sample 11 where a reflection coating 13 and a thin film 14 are formed in order on a substrate 12 is irradiated with an incident X-ray 82a at an incident angle θ shallower than a critical angle θc of the reflection coating 13, and the irradiation of the incident X-ray 82a is used to detect a fluorescent X-ray 83 emitted from attachments 86 on the thin film 14 surface, thereby detecting the attachments 86 on the sample 11 surface.

60. 发明专利

JP2012222040A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2012222040A
公开(公告)日：2012-11-12
申请号：JP2011083744
申请日：2011-04-05
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKAMURA MAKOTO
IPC分类号： H01L25/04 , H01L25/18
CPC分类号： H01L2224/04105 , H01L2224/19 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/3512 , H01L2924/35121 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a technique for repeatedly forming barrier films on a surface of a metallic component.SOLUTION: A method of manufacturing a semiconductor device comprises steps of: forming a lower barrier film 20 on a substrate 15; forming a seed film on the lower barrier film; forming a conductive member on a part of a region of the seed film; forming an upper barrier film 28 on the top surface of the conductive member; removing the seed film in the region where the conductive member is not formed and exposing the lower barrier film in the region where the seed film is removed; forming a lateral barrier film 30 on the side surfaces of the conductive member with lower barrier film exposed; and removing the lower barrier film in the region where the conductive member and the lateral barrier film are not formed.
摘要翻译：要解决的问题：提供在金属部件的表面上重复形成阻挡膜的技术。解决方案：一种制造半导体器件的方法包括以下步骤：在衬底15上形成下阻挡膜20; 在下阻挡膜上形成种子膜; 在种子膜的一部分区域上形成导电构件; 在导电构件的顶表面上形成上阻挡膜28; 在未形成导电部件的区域中除去种子膜，并在去除种子膜的区域中露出下阻挡膜; 在导电构件的侧表面上形成侧面阻挡膜30，其中下阻挡膜暴露; 并且在未形成导电构件和横向阻挡膜的区域中去除下阻挡膜。版权所有（C）2013，JPO＆INPIT

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