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51. 发明专利

JPH1160391A PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH1160391A
公开(公告)日：1999-03-02
申请号：JP21504497
申请日：1997-08-08
申请人： DENSO CORP
发明人： KONDO HIROYUKI , KITO YASUO , MAKINO HAJIME
IPC分类号： C30B25/18 , C30B29/36 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a producing method of a silicon carbide single crystal by which a high-quality α-type bulk silicon carbide single crystal can be accurately obtd. SOLUTION: A sapphire substrate 8 is prepared, and an α-type silicon carbide single crystal layer 5 is grown on the surface of the sapphire substrate 8 at a temp. higher than the melting point of silicon and lower than the melting point of sapphire. The obtd. α-type silicon carbide single crystal layer 5 is used as a seed crystal to form a silicon carbide single crystal 7. By growing the crystal at a temp. higher than the melting point of silicon and lower than the melting point of sapphire on the sapphire substrate 8, the α-type silicon carbide single crystal layer 5 can be obtd. when using the α-type silicon carbide single crystal layer 5 as a seed crystal to form a silicon carbide single crystal 7, a high quality α-type (6H) silicon carbide single crystal 7 can be accurately produced without inducing such a crystal defect caused by a solid phase transfer in the case that a cubic (3C) silicon carbide single crystal is subjected to solid phase transfer into a 6H silicon carbide single crystal.

52. 发明专利

JPH1160389A PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH1160389A
公开(公告)日：1999-03-02
申请号：JP21354597
申请日：1997-08-07
申请人： DENSO CORP
发明人： KITO YASUO , KONDO HIROYUKI , KITAOKA EIJI , ONDA SHOICHI
IPC分类号： C30B25/18 , C30B29/36 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To obtain a high-quality silicon carbide single crystal in bulk state by preventing cracks or warpage produced in a silicon carbide single crystal layer becoming a seed crystal. SOLUTION: Plural grooves 4 crossing one another are formed in a silicon single crystal substrate 3 to divide the surface of the silicon single crystal substrate 3 into plural regions. The silicon carbide single crystal layer 5 is grown on the surface of the silicon single crystal substrate 3, and further, a silicon carbide single crystal 7 is grown on the silicon carbide single crystal layer 5. In this method, by forming the grooves 4 to have such a width that is twice or less than twice of the growing length of the silicon carbide single crystal layer 5 in the parallel direction to the surface of the silicon single crystal substrate 5, the silicon carbide single crystal layer 5 divided by the grooves 4 is joined to form a continuous large-size layer while the silicon carbide single crystal layer 5 grows. Therefore, by forming the silicon carbide single crystal 7 on the large-size silicon carbide single crystal layer 5 above described, the silicon carbide single crystal 7 can be grown into bulk state.

53. 发明专利

JP2001226199A METHOD AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001226199A
公开(公告)日：2001-08-21
申请号：JP2000046795
申请日：2000-02-18
申请人： DENSO CORP
发明人： OGURI HIDEMI , HIROSE FUSAO , KONDO HIROYUKI
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L33/00 , H01L33/34 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To suppress the fluctuation of Si/C ratio in a sublimation gas without previously forming silicon carbide polycrystal or coating with tantalum carbide and to produce a high quality single crystal nearly free from detects by preventing the intake of impurities contained in graphite fine particles or a graphite vessel. SOLUTION: A flow-in port is formed by providing a gap S2 between a crucible body 1a and a raw material vessel 1b, and a flow-out port is formed by providing a gap S1 between the crucible body 1a and a cap material 1b so that a gas 5 flows from the flow-in port to the flow-out port when an SiC single crystal 4 is grown. Thereby, a layer 5a of gas fluid is formed due to the gas 5 and the inner surface of the graphic crucible 1 is covered with the layer 5a of the gas fluid.

54. 发明专利

JP2001158696A METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001158696A
公开(公告)日：2001-06-12
申请号：JP33838999
申请日：1999-11-29
申请人： TOYOTA CENTRAL RES & DEV , DENSO CORP
发明人： OKAMOTO ATSUHITO , SUGIYAMA NAOHIRO , TANI TOSHIHIKO , KAMIYA NOBUO , KONDO HIROYUKI
IPC分类号： C30B29/36 , C30B31/02
摘要： PROBLEM TO BE SOLVED: To seal micropipe defects present in a silicon carbide single crystal in the inside of the silicon carbide single crystal. SOLUTION: A silicon carbide crystal substrate 1 having micropipe defects 6 is prepared. Coating materials 5 are arranged so as to be brought into contact with both the sides of the silicon carbide crystal substrate 1. Then the silicon carbide crystal substrate 1 on which the coating materials 5 are arranged is heat-treated under pressure and the silicon carbide crystal substrate 1 is integrated with the coating materials 5. Then the silicon carbide crystal substrate 1 integrated with the coating materials 5 is heat-treated to seal the micropipe defects 6 present in the silicon carbide crystal substrate 1 in the inside of the silicon carbide crystal substrate 1. Since the micropipe defects formed in the silicon carbide crystal substrate 1 can be packed with the coating materials 5 without gaps by the heat treatment under pressure, the micropipe defects 6 can be effectively sealed by a micropipe defect sealing process.

55. 发明专利

JP2001158695A METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001158695A
公开(公告)日：2001-06-12
申请号：JP33839099
申请日：1999-11-29
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： KONDO HIROYUKI , HIROSE FUSAO , OKAMOTO ATSUHITO
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To prevent thermal etching of a coating material for covering a silicon carbide crystal substrate and carbonization of a silicon carbide crystal substrate. SOLUTION: When heat treatment is carried out, an atmosphere in a crucible 1 is adjusted to an atmosphere of silicon vapor pressure higher than a saturated vapor pressure of silicon in silicon carbide at a heat treatment temperature during the heat treatment. For example, (the vapor pressure of) the silicon vapor pressure atmosphere in the crucible 1 in the heat treatment can be raised by arranging a silicon-containing material 6 in the crucible 1. When the silicon vapor pressure atmosphere is made higher than the silicon saturated vapor pressure, namely in a state rich in silicon, sublimation of silicon from the coating material 5 can be prevented and micropipe defects 4a can be surely covered with the coating material 5 in the heat treatment. Consequently, the coating material 5 can be prevented from being thermally etched and the silicon carbide crystal substrate 4 can be prevented from being carbonized.

56. 发明专利

JP2000264793A METHOD AND APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2000264793A
公开(公告)日：2000-09-26
申请号：JP7829099
申请日：1999-03-23
申请人： DENSO CORP
发明人： KONDO HIROYUKI , HIROSE FUSAO
IPC分类号： H01L21/203 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a silicon carbide single crystal, which is free from excess Si-enriched atmosphere. SOLUTION: Silicon powder 7 is arranged in a graphite crucible as a material containing at least silicon other than the silicon carbide powdery raw material 4. Further, a partition board 6, which is permeable to gaseous silicon, is provided between the silicon powder 7 and a silicon carbide single crystal substrate 3 so that gaseous silicon generated from the silicon powder 7 is supplied to the silicon carbide single crystal substrate 3 through the partition board 6. Thereby, since the geseous silicon is supplied through the partition board 6, the feed amount of the gaseous silicon is restricted and the formation of the excess Si-enriched atmosphere is prevented. Concretely, porous carbon is used as the partition board 6.

57. 发明专利

JP2001158694A METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001158694A
公开(公告)日：2001-06-12
申请号：JP33838899
申请日：1999-11-29
申请人： TOYOTA CENTRAL RES & DEV , DENSO CORP
发明人： SUGIYAMA NAOHIRO , OKAMOTO ATSUHITO , TANI TOSHIHIKO , KAMIYA NOBUO , KONDO HIROYUKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To seal micropipe defects present in a silicon carbide single crystal in the inside of the silicon carbide single crystal. SOLUTION: A silicon carbide polycrystal 3 is deposited on the surface of a silicon carbide crystal substrate 1 containing micropipe defects 1a to coat the micropipe defects 1a. Then the silicon carbide crystal substrate 1 coated with the silicon carbide polycrystal 3 is heat-treated to seal the micropipe defects 1a in the silicon carbide crystal substrate 1. The micropipe defects 1a are surely coated by depositing the silicon carbide polycrystal 3 on the surface of the silicon carbide crystal substrate 1 in this way and then the micropipe defects 1a can be surely sealed in the silicon carbide crystal substrate 1 by the following heat treatment. For example, the silicon carbide crystal substrate 1 is heat-treated together with particles 2 containing carbon, silicon and silicon carbide so that the silicon carbide polycrystal 3 can be deposited.

58. 发明专利

JPH11268989A PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPH11268989A
公开(公告)日：1999-10-05
申请号：JP9088398
申请日：1998-03-19
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： KURIYAMA HARUNOBU , KONDO HIROYUKI , HARA KAZUTO , SUGIYAMA NAOHIRO , OKAMOTO ATSUHITO
IPC分类号： C30B23/00 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing single crystal, capable of efficiently obtaining a single crystal of SiC, etc., by a simple method and capable of reducing the production cost. SOLUTION: A seed crystal 3 used for a gaseous phase method such as a sublimation method is constituted of the aggregate of plural SiC single crystals 31. A single crystal can grow by closely disposing plural SiC single crystals 31 in the same surface so that the directions of their growth surfaces and the directions of the crystals on the surface are coincident with each other and so that a space is not formed among the SiC single crystals 31. Since the SiC single crystals 31 can be combined with each other to form the arbitrary diameter of the seed crystal 3, it is possible to enlarge the diameter of the single crystal.

59. 发明专利

JPH11255597A APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPH11255597A
公开(公告)日：1999-09-21
申请号：JP8036098
申请日：1998-03-12
申请人： DENSO CORP
发明人： KONDO HIROYUKI , HIROSE FUSAO , KITO YASUO , KURIYAMA HARUNOBU
IPC分类号： C30B23/00 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To prevent the central part of a grown crystal from being thermally etched and provide a continuous length. SOLUTION: This apparatus for producing a single crystal 8 is obtained by oppositely arranging a silicon carbide raw material powder 4 and a single crystal growth substrate 6 in a crucible 2, providing a shielding plate 1 between both, forming the shielding plate 7 into a shape recessed in the central part and making the distance between the single crystal growth substrate 6 and the central part 71 of the shielding plate 7 larger then that between the single crystal growth substrate 6 and the peripheral part 72 of the shielding plate 1. Thereby, the radiant heat from the central part 71 is reduced to lower the temperature in the central part of the single crystal 8. As a result, the thermal etching can be prevented.

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