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    • 53. 发明专利
    • SLIDING CONTACT AND MANUFACTURE THEREOF
    • JPH04167383A
    • 1992-06-15
    • JP29179190
    • 1990-10-31
    • ALPS ELECTRIC CO LTD
    • ONO TAIICHIOKUMURA HIROBUMIMIURA AKITO
    • H01R39/18H01H1/36H01H11/04H01R43/02H01R43/12
    • PURPOSE:To stabilize the force of a rare metal contact to push a resistor and enhance reliability of this invention as a contact by extending a base member along a surface on which the contact is slid, and also connecting the rare metal contact to the base member in the direction roughly perpendicular to a position of the contact where it makes contact with the surface on which the contact is slid. CONSTITUTION:The end portion of a base member 13 to which a rare metal contact 14 is fixed is parallel to a resistor 11 and is bent so that the contact 14 is roughly perpendicular to a sliding surface, for the purpose of making uniform a pushing force exerted on the rare metal contact 14. A sliding contact is extended in such a way as permitting the base member 13 to slide on the surface of the resistor 11 and also the rare metal contact 14 is formed in this extended portion whereby the base member 13 can be made longer than usual. Therefore the base member 13 made of an elastic member can stabilize a pushing force for the resistor 11 at its end portion, i.e., where the rare metal contact 14 is fixed. Reliability of the invention as a contact can thus be enhanced.
    • 58. 发明专利
    • CONDUCTIVE COMPOSITION, AND ELECTRONIC EQUIPMENT USING IT
    • JPH10314979A
    • 1998-12-02
    • JP12836097
    • 1997-05-19
    • ALPS ELECTRIC CO LTD
    • ONO TAIICHINIKAIDO TAKASHI
    • B23K35/22H01B1/22H05K3/34
    • PROBLEM TO BE SOLVED: To improve the soldering property. SOLUTION: An electrically conductive layer 10 having the conductive composition consisting of, by weight, 20-45 % metallic powder 11 which is melted with the solder at the soldering temperature, 45-70% metallic powder 12 which is not melted with the solder at the soldering temperature, and the balance the synthetic resin 13 which is not melted with the solder at the soldering temperature, where the total weight of the metallic powder which is melted with the solder and the metallic powder which is not melted with the solder is 65-95% is formed. A second electrically conductive layer 20 having the conductive composition consisting of 45-70% metallic powder 21 which is melted with the solder at the soldering temperature, 20-45% metallic powder 22 which is not melted with the solder at the soldering temperature, and the balance the synthetic resin 23 which is melted with the solder at the soldering temperature, where the total weight of the metallic powder which is melted with the solder and the metallic powder which is not melted with the solder is 65-95%, is laminated on the conductive layer 10.
    • 59. 发明专利
    • CAPACITOR AND ITS MANUFACTURE
    • JPH09213568A
    • 1997-08-15
    • JP1331696
    • 1996-01-29
    • ALPS ELECTRIC CO LTD
    • ONO TAIICHISASAKI YOSHITO
    • H01G4/00H01G4/33
    • PROBLEM TO BE SOLVED: To reduce resistance value of an electrode layer and improve loss characteristics, by forming a wall state substratum on both end edge parts of one surface of a dielectric layer, forming a first electrode layer on the other surface, and forming a second electrode layer on the surface of an inside dielectric layer of the substratum. SOLUTION: A wall state substratum 1 of a square frame type is formed on a peripheral edge part of one surface of a dielectric layer 2. A first electrode layer 3 is formed on almost the whole of the other surface of the dielectric layer 2. The inside dielectric layer 2 of the substratum 1 which is formed on one surface of the dielectric layer 2 is connected with a second electrode layer 4. It is desirable that the specific resistance of metal element constituting the first electrode layer 3 and the second electrode layer 4 is smaller than or equal to 3×10 Ωcm. The thickness of the first electrode layer 3 and the second electrode layer 4 is set as large as possible, which is greater than or equal to 10μm. The substratum 1 is constituted of single crystal of silicon.
    • 60. 发明专利
    • SURGE ABSORBER
    • JPH09148044A
    • 1997-06-06
    • JP30134595
    • 1995-11-20
    • ALPS ELECTRIC CO LTD
    • ONO TAIICHI
    • H01T1/20H01T4/10H01T4/12
    • PROBLEM TO BE SOLVED: To shorten the response time till the start of discharging in a surge absorber in which a gap is formed between resistor layers. SOLUTION: Two resistor layers 12a and 12b are formed on the surface of the base 11 of a flat plate chip while a gap 13 is reserved in between. One of the resistor layers 12a is formed from a high resistance layer (a) while the other resistor layer 12b is set in low resistance in which a low resistance layer (b) is laminated on the high resistance layer (a). Because of low resistance of layer 12b, the time constant determined by this resistance R2 and the capacitance C of the gap 13 becomes short, and the gap charging time is shortened. This allows shortening of the response time till when discharge is started between the main electrodes. If the resistor layers 12a, 12b are covered with an electron emitting material layer 21, the response time can be shortened still more.