专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JPS5944744A Direct-heated cathode 失效
标题翻译：直接加热阴极
公开(公告)号：JPS5944744A
公开(公告)日：1984-03-13
申请号：JP15618482
申请日：1982-09-08
申请人： Matsushita Electronics Corp
发明人： KIMURA MASAMICHI , YAMASHITA KATSUYUKI , ENDOU JIYUN
IPC分类号： H01J1/15 , H01J1/16
CPC分类号： H01J1/16
摘要： PURPOSE:To reduce loss of radiated heat and increase the cathode supporting stength by securing the each edge of two heaters consisting of metal thin tube bent in the form of letter V respectively to the one edge and other edge of a metal piece having the emitter on the top surface thereof and by supplying power from the other edge. CONSTITUTION:A disk type metal piece 1 which is mainly made of nickel is provided on the top surface thereof with an emitter 2 consisting of electron emitting oxide layer. The edge 3a of heater 3 is fused to the edge 1a of metal piece 1, while the edge 4a of heater 4 to the other edge 1b thereof. The heaters 3, 4 are respectively formed by bending a metal thin tube made of nickel-chromium alloy or nickel-tungsten alloy into the V-shape and the edges 3a, 4a and 3b, 4b are pressed into flat shape. The edges 3b, 4b are respectively fused to metal poles 5, 6. Thereby, loss of radiated heat can be reduced and cathode supporting strength can be increased.
摘要翻译：目的：通过将由金属薄管组成的两个加热器的每个边缘分别固定在具有发射器的金属片的一个边缘和另一个边缘上，从而减少辐射损失并增加阴极支撑长度其顶表面并且通过从另一边缘供电。构成：主要由镍构成的盘状金属片1的顶面上设置有由电子发射氧化物层构成的发射体2。加热器3的边缘3a与金属片1的边缘1a融合，而加热器4的边缘4a熔合到其另一边1b。加热器3,4分别通过将由镍 - 铬合金或镍 - 钨合金制成的金属薄管弯曲成V形并且边缘3a，4a和3b，4b被压扁成形而形成。边缘3b，4b分别熔合到金属极5,6上。从而可以减少辐射热的损失，并且可以提高阴极支撑强度。

42. 实用新型

JPS58166060U JPS58166060U - 失效
公开(公告)号：JPS58166060U
公开(公告)日：1983-11-05
申请号：JP6364082
申请日：1982-04-30
IPC分类号： H01J1/16 , H01L33/30 , H01L33/48 , H01S5/00 , H01L33/00 , H01S3/18

43. 发明专利

JPS5851438A ELECTRON BEAM SOURCE 失效
公开(公告)号：JPS5851438A
公开(公告)日：1983-03-26
申请号：JP14971181
申请日：1981-09-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAKAI TOMOAKI , FUJINAMI AKIHIRA , YASHIRO TAKEHISA
IPC分类号： H01J3/02 , H01J1/16 , H01J37/063 , H01L21/027
摘要： PURPOSE:To obtain a wide molding beam with high current density and brightness and with smooth current density distribution by using a high brightness LaB6 as the emitter of a Pierce type electron gun with a wide emitter area and obtaining an LSI pattern forming beam by the division of a Wehnelt electrode. CONSTITUTION:A cathode 5 uses a high emission and brightness LaB6 single crystal. The emitter surface is provided with (100) or (110) as accurately as possible and for example, a thermoelectron is radiated by heating it at a high vacuum of 10 Torr. Besides, a Pierce type electrode 6 is mechanically divided into a number of electrodes, for example, four electrodes 6-1 to 6-4, each of which is separated electrically. In order to operate these components, the voltage in the vicinity of cathode potential is applied to 6-1 to 6-4 independently and the field distribution near the tip of a cathode 5 is controlled. As a result, a wide molding beam with high current density and brightness and with smooth current density distribution can be obtained on the surface vertical to an optical axis.

44. 发明专利

JPS587740A ELECTRON EMISSION LAYER 失效
公开(公告)号：JPS587740A
公开(公告)日：1983-01-17
申请号：JP6266082
申请日：1982-04-16
申请人： IBM
发明人： BURUUSU POORU PIGIN
IPC分类号： H01J1/13 , H01J1/16 , H01J9/04 , H01J29/04

45. 实用新型

JPS57124960U JPS57124960U - 失效
公开(公告)号：JPS57124960U
公开(公告)日：1982-08-04
申请号：JP1223281
申请日：1981-01-30
IPC分类号： H01J35/06 , H01J1/16

46. 实用新型

JPS57106164U 失效
公开(公告)号：JPS57106164U
公开(公告)日：1982-06-30
申请号：JP18457380
申请日：1980-12-22
IPC分类号： H01J19/04 , H01J1/16

47. 实用新型

JPS5783648U JPS5783648U - 失效
公开(公告)号：JPS5783648U
公开(公告)日：1982-05-24
申请号：JP16030180
申请日：1980-11-11
IPC分类号： H01J23/04 , H01J1/15 , H01J1/16

48. 实用新型

JPS5764052U JPS5764052U - 失效
公开(公告)号：JPS5764052U
公开(公告)日：1982-04-16
申请号：JP14162280
申请日：1980-10-06
IPC分类号： H01J23/06 , H01J1/15 , H01J1/16 , H01J23/04

49. 发明专利

JPS5736750A Electron gun 失效
标题翻译：空值
公开(公告)号：JPS5736750A
公开(公告)日：1982-02-27
申请号：JP11067280
申请日：1980-08-12
申请人： Sony Corp
发明人： OOGOSHI AKIO , MURAMOTO SHOICHI , UENO KIICHI , KURA TSUNEO , NOMURA KAZUMASA
IPC分类号： H01J29/04 , H01J1/15 , H01J1/16
CPC分类号： H01J1/15
摘要： PURPOSE:To produce an electron gun for a cathode ray tube having a super-low power consumption, by employing a cylindrical cathode where a thermion emitting material is spread over a heater wire wound tightly into a coil. CONSTITUTION:A cylindrical cathode 24 where a thermion emitting material 23 is spread over a heater wire 22 wound tightly into a coil. For example, a metal oxide 23 such as (Ba, Ca, Sr)O3 is spread through electrodeposition or blasting onto the coil-shaped section 22 of a tungsten heater 21 to form a direct-heated cathode 24. Then both ends of the heater wire 21 are secured through pressing, caulking, welding, etc. onto a pair of lead wires 26a, 26b planted on a ceramic insulative supporter 25 to construct a cathode structure 27 which is arranged in the first grid G1 as shown on the drawing to assemble an electron gun. Consequently the thermal capacity of the cathode 24 is reduced while only the required sectiol is locally heated thereby the power consumption of the cathode can be reduced to approximately 1/4 of the conventional one, for example.
摘要翻译：目的：为了制造具有超低功耗的阴极射线管的电子枪，通过使用圆柱形阴极，其中热发射材料分布在紧密缠绕在线圈中的加热丝上。构成：圆柱形阴极24，其中热离子发射材料23分布在紧密缠绕在线圈中的加热丝22上。例如，通过电沉积或喷射将诸如（Ba，Ca，Sr）O 3的金属氧化物23扩散到钨加热器21的线圈状部分22上以形成直接加热的阴极24.然后加热器的两端线21通过压制，铆接，焊接等固定在植入在陶瓷绝缘支撑体25上的一对引线26a，26b上，构成阴极结构27，阴极结构27如图所示设置在第一栅格G1中，以组装一个电子枪。因此，阴极24的热容量减小，而仅需要局部加热所需的塞西欧，从而阴极的功耗可以降低到常规的方法的大约1/4。

50. 发明专利

JPS56132736A ELECTRON GUN 失效
公开(公告)号：JPS56132736A
公开(公告)日：1981-10-17
申请号：JP3476680
申请日：1980-03-21
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： SASAKI ISAO , TAKIGAWA TADAHIRO
IPC分类号： H01J37/06 , H01J1/16 , H01L21/027
摘要： PURPOSE:To provide both the circular crossover configuration and the circular emission pattern of an electron gun without causing any increase of the heating temperature and the bias voltage of the gun, by assigning a special crystal surface to the top surface of a single crystal chip of LaB6, and by forcing electrons to be discharged from this crystal surface. CONSTITUTION:To the top surface of a single crystal chip of LaB6 is assigned a crystal surface possessing a crystal orientation of , or the one slanted from by less than 15 deg., or equivalent to any one of these. Electrons are discharged from this crystal surface at a temperature over 1,450 deg.C. The surface of , appears only on the top of chip end, and electron beams are discharged only from this top.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式