专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JPS59142842A Vapor deposition device 失效
标题翻译：蒸气沉积装置
公开(公告)号：JPS59142842A
公开(公告)日：1984-08-16
申请号：JP1846383
申请日：1983-02-05
申请人： Konishiroku Photo Ind Co Ltd
发明人： MANO SHIGERU , SATOU SHIGERU
IPC分类号： B01J19/00 , C23C14/24 , C23C14/32
CPC分类号： C23C14/24 , C23C14/32
摘要： PURPOSE:To make the distribution of ionized or activated gas uniform and to make the content in the film deposited by evaporation uniform by changing the direction or the position of a gas discharger facing a substrate to be subjected to vapor deposition with time. CONSTITUTION:An evaporating source 7 and a gas discharging part 18 which supplies modifying gas in an ionized or activated state are disposed respectively oppositely to a substrate 4 to be subjected to vapor deposition. The direction or the position of the part 18 with respect to the substrate 4 is changed with time by a driving means consisting of a fixing plate 13, bellows 14, 15, rods 27, 28, a motor 19, a cam 20, etc. The ionized or activated gas is thus evenly distributed and the content in the film deposited by evaporation is made uniform.
摘要翻译：目的：使离子化或活性气体的分布均匀，并通过改变朝向衬底的气体放电器的方向或位置随时间进行气相沉积，使蒸发器中沉积的成分均匀。构成：将蒸发源7和气体排出部18供给到电离或活化状态的改性气体分别与要进行气相沉积的基板4相对配置。通过由固定板13，波纹管14,15，杆27,28，电动机19，凸轮20等组成的驱动装置，部件18相对于基板4的方向或位置随时间而改变。因此，电离或活化气体均匀分布，通过蒸发沉积的膜中的含量均匀。

42. 发明专利

JPS5956578A Ion plating method 失效
标题翻译：离子镀层法
公开(公告)号：JPS5956578A
公开(公告)日：1984-04-02
申请号：JP16816782
申请日：1982-09-27
申请人： Tanaka Kikinzoku Kogyo Kk
发明人： SHIMAZATO TOSHIAKI
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/0021 , C23C14/32
摘要： PURPOSE:To form a stable compd. film without heating an object to be treated to a high temp., by ionizing an evaporating material with a filament or an ionization electrode and ionizing a gas for reaction with a thermion filament and a thermion electrode. CONSTITUTION:The evaporated material 4 of a vapor source 3 is melted and evaporated and is ionized with an ionization electrode 5. On the other hand, a gas for reaction is admitted through a gas introducing port 6 into an evacuation chamber 1 to maintain the inside of said chamber below the reduced pressure. A thermion filament 9 is then heated to ionize the gas for reaction and the electrons generated with the ionization are absorbed in a thermion electrode 10. A negative voltage is impressed to an object 7 to be treated to apply coating on the object 7, whereby the compd. film free from defects such as cracking, peeling or the like is formed. The object 7 is heated to a relatively low temp. with a heater 8 or is not heated in this case.
摘要翻译：目的：形成一个稳定的compd。薄膜，而不需要将待处理物体加热到高温，通过用丝或电离电极离子化蒸发材料并离子化气体以与热电极丝和热电极反应。构成：将蒸气源3的蒸发材料4熔化并蒸发，并用电离电极5离子化。另一方面，反应气体通过气体导入口6进入抽真空室1，以保持内部的所述室低于减压。然后加热热丝9将气体电离以进行反应，并且用电离产生的电子被吸收在热电极10中。将负电压施加到待处理的物体7上，以将涂层涂覆在物体7上，由此，卤素化合物。形成无裂纹，剥离等缺陷的薄膜。将物体7加热到相对低的温度。在这种情况下，加热器8或不加热。

43. 发明专利

JPS5928567A Film forming method 失效
标题翻译：电影制作方法
公开(公告)号：JPS5928567A
公开(公告)日：1984-02-15
申请号：JP13874482
申请日：1982-08-09
申请人： Sumitomo Electric Ind Ltd
发明人： OOTSUKA AKIRA , KANEHIRO KAZUO , SHIMIZU YASUHIRO , OKAZAKI MAMORU
IPC分类号： C23C14/24 , C23C14/02 , C23C14/22 , C23C14/32
CPC分类号： C23C14/32 , C23C14/022
摘要： PURPOSE:To reduce installation cost, in a wind-up type physical vapor deposition method of a metal plate, by continuously forming a coating layer formed by ionizing the part of evaporated particles from a single evaporation source to perform ion plating and a coating layer due to vacuum vapor deposition. CONSTITUTION:A metal tape 1 is sent out from a supply reel 2 by a feeding roll 3 and introduced into an ion bombard region 4 where subjected to surface cleaning to be introduced into a coating treatment chamber 11. At first, evaporated particles from an evaporation source are ionized by a high frequency coil 5 to form the ionized particles 12 which are, in turn, subjected to ion plating with respect to the under surface of the tape 1 to form a coating layer 8. In the next step, the evaporated particles evaporated from the evaporation source 10 are precipitated to the surface of the ion plating coating layer 8 by vacuum vapor deposition to form a vacuum deposition layer 9.
摘要翻译：目的：为了降低安装成本，在金属板的卷绕式物理气相沉积法中，通过连续地形成通过从单个蒸发源电离蒸发的颗粒的一部分而进行离子镀和形成的涂层以真空气相沉积。构成：金属带1通过供给辊3从供带盘2送出，并被引入到进行表面清洁的离子轰击区域4中，以引入涂覆处理室11.首先，蒸发的蒸发颗粒源被高频线圈5电离以形成电离粒子12，电离粒子12又相对于带1的下表面进行离子电镀以形成涂层8.在下一步骤中，蒸发的粒子通过真空蒸镀沉积从蒸发源10蒸发的离子镀覆层8的表面，形成真空蒸镀层9。

44. 发明专利

JPS5917222A Manufacture of multilayer magnetic thin-film 失效
标题翻译：多层磁薄膜的制造
公开(公告)号：JPS5917222A
公开(公告)日：1984-01-28
申请号：JP12569082
申请日：1982-07-21
申请人： Hitachi Ltd
发明人： OOTA NORIO , KAMIYAMA KAZUYA , ANDOU KEIKICHI , HOSOE YUZURU , SUGITA KEN
IPC分类号： C23C14/40 , C23C14/02 , C23C14/32 , H01F10/12 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18
CPC分类号： H01F41/18 , C23C14/02 , C23C14/32
摘要： PURPOSE:To form the multilayer amorphous magnetic thin-film, magnetic characteristics and film thickness thereof differ respectively, continuously by changing the magnitude and applying time of negative bias voltage applied to a substrate by stages. CONSTITUTION:The silicon single crystalline substrate 1 is bonded with a conductive substrate holder 2. A target parent material 3 is placed on a target base. The inside of a bell jar 5 is evacuated up to the high vacuum of approximately 10 Torr, and Ar gas is introduced to increase pressure up to 5X10 Torr. Ar Gas is changed into plasma to sputter a target when high-frequency voltage is applied to the target by the power of 100W from a high-frequency power supply 7, and the substrate 1 is coated with sputtering particles when opening a shutter 6. Negative bias voltage Vb is applied to the substrate from a power supply 8 at that time. Accordingly, the same target parent material is used, and the multilayer films of diffferent magnetic characteristics can be formed continuously in the same sputtering device.
摘要翻译：目的：为了形成多层非晶磁性薄膜，通过分阶段改变施加到衬底上的负偏置电压的大小和施加时间来连续地不同地分别使其磁特性和膜厚度不同。构成：将硅单晶衬底1与导电衬底保持器2结合。将靶母材3放置在靶基底上。将钟罩5的内部抽真空至大约10 -7乇的高真空，并引入Ar气体以将压力增加至5×10 -3乇。当从高频电源7通过100W的功率向目标物施加高频电压时，Ar气体变为等离子体，以溅射靶，当打开快门6时，基板1被溅射颗粒涂覆。负极此时，偏置电压Vb从电源8施加到基板。因此，使用相同的目标母体材料，并且可以在相同的溅射装置中连续形成不同磁特性的多层膜。

45. 发明专利

JPS596371A Apparatus for bundling and scattering vapor deposition source 失效
标题翻译：装备和散射蒸汽沉积源的装置
公开(公告)号：JPS596371A
公开(公告)日：1984-01-13
申请号：JP11293682
申请日：1982-06-30
申请人： Toshiba Corp
发明人： MIKAMI HITOSHI
IPC分类号： C23C14/24 , C23C14/32 , C23C14/54
CPC分类号： C23C14/32 , C23C14/24
摘要： PURPOSE:To provide the titled apparatus constituted so as to scatter a vapor deposition source to an arbitrary direction in a bundled form, by providing a means mutually applying an AC electric field to a vapor deposition source in a direction crossing both fields at right angles and in the same phase. CONSTITUTION:Electrodes 2, 3 are arranged in opposed relation to each other so as to hold a vapor deposition source 1 therebetween and an AC power source 4 for generating an electric field is connected to the electrodes 2, 3. Electromagnets 5, 6 are arranged in opposed relationship in a direction crossing the opposed direction of the electrodes 2, 3 at right angles and an AC power source 7 for generating a magnetic field is connected to the electromagnets 5, 6. To the vapor deposition source 1, the electric field due to the electrodes 2, 3 and the magnetic field due to the electromagnets 5, 6 in the direction crossing the above mentioned electric field are respectively applied. In this case, the frequencies of both power sources 4, 7 are made equal and the electric field and the magnetic field are applied to the vapor deposition source 1 in the same phase. By this method, the vapor deposition source 1 can be scattered to an upward direction in a bundled form and a vapor deposition film can be formed on a substrate in good efficiency.
摘要翻译：目的：提供一种标题装置，其构造为将蒸镀源以捆扎形式散布到任意方向，通过提供一种在垂直于两个场的方向上将气相沉积源相互施加AC电场的装置，以及在同一个阶段。构成：电极2,3彼此相对设置，以便在其间保持气相沉积源1，并且用于产生电场的AC电源4连接到电极2,3。电磁体5,6被布置在与电极2,3的相对方向成直角的方向上具有相对关系，并且用于产生磁场的AC电源7连接到电磁体5,6。对于蒸镀源1，分别施加到电极2,3，并且在与上述电场交叉的方向上由于电磁体5,6而产生的磁场。在这种情况下，使两个电源4,7的频率相等，并将电场和磁场以相同的相位施加到气相沉积源1。通过这种方法，气相沉积源1可以以向上的方式被散射成束状，并且可以以高效率在基板上形成气相沉积膜。

46. 发明专利

JPS58224164A Ion plating device 失效
标题翻译：离子镀设备
公开(公告)号：JPS58224164A
公开(公告)日：1983-12-26
申请号：JP10701082
申请日：1982-06-22
申请人： Citizen Watch Co Ltd
发明人： SASANUMA KIYOUYUU , SHIMIZU SHIYOUTAROU , SHINOMIYA HIDEO
IPC分类号： C23C14/32 , H01L21/285
CPC分类号： C23C14/32
摘要： PURPOSE:To improve ionization efficiency and coating yield, by disposing filaments for generation of thermoelectrons near a substrate whcih is at a negative potential with respoect to an evaporating source, and disposing plate-like anodes which are at a positive potential with said filaments and the substrate behind the filaments with the plate surfaces directed toward the substrate side. CONSTITUTION:An ion plating device has filaments 12 for generation of thermoelectrons near a substrate 4 which is at a negative potential with respect to an evaporating source 3. Plate-like anodes 13 which are at a positive potential with respoct to the filaments 12 and the substrate 4 are disposed behind the filaments 12 with the plate surfaces directed toward the substrate 4 side. Since the anodes 16 are disposed above the source 3 in such a way, the ionization efficiency is improved and the anodes 13 function as the 2nd evaporating source, thus improving the coating yield.
摘要翻译：目的：为了提高电离效率和涂层产率，通过在与蒸发源相关的负极上放置用于产生热电子附近的热电子的长丝，并设置与所述长丝成正电势的板状阳极，并且长丝之后的基板，其中板表面指向基板侧。构成：离子镀装置具有用于在衬底4附近产生热电子的细丝12，衬底4相对于蒸发源3处于负电位。与阳极电位相关的板状阳极13与细丝12和衬底4设置在灯丝12后面，其中板表面指向衬底4侧。由于阳极16以这样的方式设置在源3上方，因此电离效率得到改善，阳极13用作第二蒸发源，从而提高涂层产率。

47. 发明专利

JPS58221271A Formation of film by ion plating method 失效
标题翻译：通过离子镀法形成薄膜
公开(公告)号：JPS58221271A
公开(公告)日：1983-12-22
申请号：JP10515582
申请日：1982-06-18
申请人： Citizen Watch Co Ltd
发明人： SASANUMA KIYOUYUU , KOSHI MASAO , TAKAHASHI AKIKIMI , SHIMIZU SHIYOUTAROU , ENOMOTO MITSUGI , YOSHIKAWA YOUJI
IPC分类号： C23C14/32 , H01J37/32
CPC分类号： H01J37/32422 , C23C14/32 , Y10T428/31678
摘要： PURPOSE: To form a film having a uniform thickness of the surface of a substrate having an intricate three-dimensional shape, by applying the potential, which is negative with respect to a vapor source, on the substrate in the beginning and end periods of forming the film, and maintaining the substrate at a floating potential in the intermediate period.
CONSTITUTION: The inside of a vacuum chamber 2 is evacuated with an evacuation system 1 and gaseous Ar is introduced through a gas introducing port 10 therein to maintain the inside of said chamber under prescribed pressure. When filaments 12 for generating thermions and a pair of anode electrodes 13, 14 are driven in such a state, the electron flow radiated from the filaments 12 and accelerated by the anodes 13, 14 energizes the gaseous Ar to discharge electricity and to ionize, thus filling the gaseous plasma of the electric discharge in the chamber 2. A power source switch 8 is closed in this stage and a potential which is negative with respect to a vapor source 4 is applied on a substrate 6 to form a film on the substrate 6. The switch 8 is opened to maintain the substrate 6 at a floating potential to form the film on the substrate 6. Again the switch 8 is closed to apply the potential which is negative with respect to the source 4 on the substrate 6.
COPYRIGHT: (C)1983,JPO&Japio
摘要翻译：目的：为了形成具有复杂三维形状的基板表面的均匀厚度的膜，通过在成形的开始和结束周期中将相对于蒸气源为负的电位施加在基板上并且在中间周期中将基板保持在浮动电位。构成：真空室2的内部用排气系统1抽真空，气体Ar通过其中的气体引入口10引入，以将所述室的内部保持在规定压力下。当用于产生热电偶的灯丝12和一对阳极电极13,14在这种状态下被驱动时，从灯丝12辐射并被阳极13,14加速的电子流激发气态Ar以放电并电离，因此填充室2中的放电的气体等离子体。在该阶段中关闭电源开关8，并将相对于蒸气源4的负电位施加在基板6上以在基板6上形成膜打开开关8以将基板6保持在浮动电位，以在基板6上形成薄膜。再次关闭开关8以将相对于源4的负电位施加在基板6上。

48. 发明专利

JPS58217674A Ion plating apparatus equipped with plural evaporation sources 失效
标题翻译：离子镀设备装备有多个蒸发源
公开(公告)号：JPS58217674A
公开(公告)日：1983-12-17
申请号：JP9820082
申请日：1982-06-08
申请人： Citizen Watch Co Ltd
发明人： SASANUMA KIYOUYUU , SHIMIZU SHIYOUTAROU , ENOMOTO MITSUGI
IPC分类号： B01J3/00 , B01J19/08 , C23C14/32 , H01L21/203 , H01L21/285
CPC分类号： B01J3/006 , C23C14/32
摘要： PURPOSE:To make it possible to control a stable film composition by arranging plural evaporation sources high in mutual interference in a state dispersed above and below through a substrate holder to exclude the mutual interference between plural evaporation sources. CONSTITUTION:Below a substrate holder 3 in a vacuum chamber, an upwardly directed evaporation source A accommodating an evaporative material, for example, Ti is provided. On the other hand, above the holder 3, a downardly directed evaporation source C accommodating an evaporative material, for example, gold is provided. Plural substrates 2 on the holder 3 are revolved by the holder 3 while positive potential is respectively applied to anodes 61, 62 by power sources 81, 82 to ionize the evaporation sources A, C and positive potential is applied to the substrates 2 by a substrate power source 4. In forming an eutectic film of titanium nitride and gold, a N2-containing gas and an inert gas are respectively introduced from introducing ports 91, 92. By this method, nitriding reaction of Ti vapor is promoted and the evaporation amount of gold is also stabilized.
摘要翻译：目的：为了通过在基板保持器上分散上下分散的状态配置多个相互干涉的蒸发源，能够控制稳定的膜组成，以排除多个蒸发源之间的相互干扰。构成：在真空室内的衬底保持器3的下面，提供容纳蒸发材料例如Ti的向上定向蒸发源A. 另一方面，在保持器3的上方，设置容纳蒸发材料例如金的下降的蒸发源C. 保持器3上的多个基板2由保持器3旋转，同时通过电源81,82将正电位分别施加到阳极61,62，以电离蒸发源A，C，并且通过基板将正电位施加到基板2 电源4.在形成氮化钛和金的共晶膜时，分别从引入口91,92引入含有N 2的气体和惰性气体。通过这种方法，促进Ti蒸气的氮化反应和蒸发量黄金也稳定下来。

49. 发明专利

JPS57120666A Coating method and apparatus by utilizing ion for electrically non-conductive substrate 失效
标题翻译：用于非导电基板的涂覆方法和设备
公开(公告)号：JPS57120666A
公开(公告)日：1982-07-27
申请号：JP19462681
申请日：1981-12-04
申请人： Hoohibaakuumu Doresuden Veb
发明人： HERUMUUTO BORINGERU , BERUNTO BIYUTSUKEN , DEIITOMAARU SHIYURUTSUE , RIYUUDEIGERU UIRUBERUKU
IPC分类号： C23C14/24 , C23C14/32 , C23C14/34 , C23C16/26 , C23C16/509
CPC分类号： C23C14/345 , C23C14/32 , C23C16/26 , C23C16/509

50. 发明专利

JPS5779904A Production of optical circuit 失效
标题翻译：生产光电路
公开(公告)号：JPS5779904A
公开(公告)日：1982-05-19
申请号：JP15631080
申请日：1980-11-06
申请人： Nippon Sheet Glass Co Ltd
发明人： TAKAGI TOSHINORI , NISHIZAWA KOUICHI , KATAYAMA SHINYA
IPC分类号： G02B6/13 , C23C14/32
CPC分类号： C23C14/32
摘要： PURPOSE:To obtain an optical circuit having transmission performance easily by heating a furnace contg. a material of a refractive index larger than that of a base material in a high vacuum, ionizing the vapor ejecting through the small hole provided in the furnace by means of electron beam irradiation, accelerating the ions and sticking the same on the base material provided with a mask material. CONSTITUTION:A crucible 1 contg. a film forming material 2 such as Pb is heated in a high vacuum with a heater 3 and vapor is ejected through a nozzle provided to the crucible 1 and is supercooled to make clusters which are ionized by the electron beams irradiated from an electron radiation source 4A. Said ions are accelerated by the voltage applied between the crucible 1 (positive electrode) and lead-out electrode 4 (negative electrode), and are stuck to a base material 8 provided with a mask 6, whereby an optical path film 9 is formed. Thereby, the optical circuit having high transmission performance is obtained easily.
摘要翻译：目的：通过加热炉子来获得具有传输性能的光路。在高真空中折射率大于基底材料的材料，通过电子束照射将通过设置在炉中的小孔喷出的蒸气电离，加速离子并将其粘在设置有基底材料的基材上面具材料。构成：坩埚1 诸如Pb的成膜材料2在加热器3的高真空中被加热，并且通过设置在坩埚1上的喷嘴喷射蒸气，并且被过冷却，使得通过从电子辐射源4A照射的电子束电离的簇。所述离子被施加在坩埚1（正极）和引出电极4（负极）之间的电压加速，并被粘贴到设置有掩模6的基材8上，由此形成光路膜9。由此，容易获得具有高透射性能的光电路。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式