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41. 发明专利

JPH10253976A LIQUID CRYSTAL DISPLAY ELEMENT 失效
公开(公告)号：JPH10253976A
公开(公告)日：1998-09-25
申请号：JP5766897
申请日：1997-03-12
申请人： TOSHIBA CORP
发明人： SHIMIZU TOSHIO , NIIMURA TADASHI , SAITO SHUICHI , KANO MASAAKI
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To enable the use of an electrode wiring consisting of a low-resistance alloy and to improve the aperture ratio by making the width of the electrode wiring minute without deteriorating the operation and function, by covering the contact surfaces of respective electrode bodies and other layers with films consisting of a specified material. SOLUTION: The gate electrodes 9 are formed of the electrode bodies 9a which consist of Al or Al alloy or Cu or Cu alloy and the films 9b which consist of at least one kind of the materials selected from TiN, MoTa, MoW and cover at least the contact surfaces existing between the electrode bodies 9a and channel parts 18 among the surfaces at which the electrode bodies 9a come into contact with first gate insulating layers 10. The source electrodes 15 (drain electrodes 16) are formed of the electrode bodies 15a (16a) which consist of Al or an Al alloy or Cu or a Cu alloy and the films 15b (16b) which consist of at least one kind of the materials selected from among TiN, MoTa, MoW and cover the contact surfaces (contact surfaces and pixel electrodes 7) with at least the high concn. silicon active layers 14 of the electrode bodies 15a (16a).

42. 发明专利

JPH11168085A DRY ETCHING 失效
公开(公告)号：JPH11168085A
公开(公告)日：1999-06-22
申请号：JP27904698
申请日：1998-09-30
申请人： TOSHIBA CORP
发明人： TONOTANI JIYUNICHI , SAITO SHUICHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide using an inorganic mask a method of dry etching which allows the formation of a high precision pattern faithful to a mask pattern by forming a protective film on an etching sidewall from a reactive product of gas itself which is introduced into a chamber. SOLUTION: This method is provided with a process, wherein a substrate which is a target of etching and has an inorganic mask 22 formed on its surface is located in a chamber and a process, wherein etching gas and gas including hydrogen and nitrogen are supplied into the chamber and then the etching gas is activated and a part of the substrate which is not covered by the mask 22 is etched selectively and a compound including ammonium salt is generated on an etching sidewall.

43. 发明专利

JPH10223736A TABLE DEVICE AND PLASMA PROCESSOR USING THE SAME 失效
公开(公告)号：JPH10223736A
公开(公告)日：1998-08-21
申请号：JP2520297
申请日：1997-02-07
申请人： TOSHIBA CORP
发明人： YAMAZAKI OSAMU , SAITO SHUICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a table device and plasma processor using the same capable of controlling temperature excellently without destructing a processed body even under low pressure. SOLUTION: A table device 17 for temperature-controlling a processed body to be processed inside a chamber 11 is to be equipped with a table main body 19 wherein the shape of a mounting surface 20 is formed in a recessed and curved shape, a temperature control means 21 provided inside the table main body 19 for controlling the temperature of the mounting surface 20, as well as a clamping means 26 provided on the mounting surface 20 side of the table main body 19 tightly pressing the processed body 18 against the mounting surface 20.

44. 发明专利

JPH0964012A ETCHING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH0964012A
公开(公告)日：1997-03-07
申请号：JP21615495
申请日：1995-08-24
申请人： TOSHIBA CORP
发明人： MUSUTAFUA ERIAKOBI , TONOYA JIYUNICHI , SAITO SHUICHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To etch an aluminum into a shape having low taper angle by using as an etching gas a mixing gas consisting of a gas including at least a chlorine and a gas including an oxygen element. SOLUTION: After an etching gas is excited, an aluminum thin film is etched by at least a reactive ion generated through the excitation. In such a case, a mixing gas consisting of a gas including at least a chlorine and a gas including an oxygen element is used as an etching gas. For example, a helicon wave plasma device using low-pressure high-density plasma is used as an etching device, and a mixing gas BCl3 /O2 consisting of a gas including BCl3 and a gas including O2 is introduced as an etching gas from a first gas introduction tube 18. Then a high-density plasma is generated in a cylindrical quartz belljar 10, and an Al of a sample 20 is etched by reactive ions generated through excitation of the mixing gas BCl3 O2 and neutral active species.

45. 发明专利

JPH08195393A FORMATION OF METAL WIRING 失效
公开(公告)号：JPH08195393A
公开(公告)日：1996-07-30
申请号：JP514295
申请日：1995-01-17
申请人： TOSHIBA CORP
发明人： SAITO SHUICHI
IPC分类号： H01L23/52 , H01L21/304 , H01L21/3205
摘要： PURPOSE: To polish a metal layer with high uniformity. CONSTITUTION: A metal layer is formed on an under-coat layer 2 having a groove 11 formed therein, and the metal layer is flattened by CMP to form a buried metal wiring 14. In this process, a dummy pattern 12 is formed in the groove 11 along with formation of the groove 11, and then the metal layer is formed and flattened by chemi mechanical abrasion.

46. 发明专利

JPH06204563A METHOD AND EQUIPMENT FOR MANUFACTURING ELECTRODE 失效
公开(公告)号：JPH06204563A
公开(公告)日：1994-07-22
申请号：JP72393
申请日：1993-01-06
申请人： TOSHIBA CORP
发明人： SHIMIZU TOSHIO , NIIMURA TADASHI , SAITO SHUICHI , NISHIMURA HIROSHI , MINAMIYAMA TAKAYUKI
IPC分类号： H01L33/14 , H01L33/30 , H01L33/40 , H01L33/00
摘要： PURPOSE:To provide a method and an equipment for forming electrodes on a light-emitting device efficiently by depositing electrode material using a simple structure. CONSTITUTION:Gold 8, electrode material, is vaporized by a chemical reaction with reactive gas in a state of plasma. The voporized material is supplied to an electrode formation section of a light-emitting device 10 having a pn junction on a substrate so that the welectrode material is deposited there.

47. 发明专利

JPH06124917A ETCHING DEVICE 失效
公开(公告)号：JPH06124917A
公开(公告)日：1994-05-06
申请号：JP27309492
申请日：1992-10-12
申请人： TOSHIBA CORP
发明人： NIIMURA TADASHI , SAITO SHUICHI , NISHIMURA HIROSHI , MINAMIYAMA TAKAYUKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide an etching device which enables improvement of etching rate when etching is performed by etching reactive gas. CONSTITUTION:The title device is provided with a vapor deposition chamber 3, a vapor deposition source 11 for attaching gold (Au) to a surface of a silicon substrate 8 which is provided to the vapor deposition chamber and is transferred to the vapor deposition chamber, an etching chamber 4 which is provided adjacent to the vapor deposition chamber and is partitioned to be communicated by an opening and closing valve and a supply source 18 which supplies etching reactive gas for etching a silicon substrate to the etching chamber 4.

48. 发明专利

JPH0681149A DEVICE FOR FORMING GOLD FILM 失效
公开(公告)号：JPH0681149A
公开(公告)日：1994-03-22
申请号：JP23069492
申请日：1992-08-31
申请人： TOSHIBA CORP
发明人： NIIMURA TADASHI , SAITO SHUICHI , NISHIMURA HIROSHI , MINAMIYAMA TAKAYUKI
IPC分类号： C23C16/08 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/50 , C23C16/511
摘要： PURPOSE:To provide a device for forming a gold film by which a gold film can be efficiently formed on a substrate as a body to be subjected to film formation with a simple structure. CONSTITUTION:This device for forming a gold film has a chamber 1 in which a substrate 1a is disposed, a gas feeding source 6 for feeding a reactive gas into the chamber 1 through a feeding pipe 5 connected to the chamber 11, a microwave generating source 7 for exciting the reactive gas fed from the gas feeding source 6 into the chamber 1 to a plasma state and solid gold (Au) 8 disposed on the downstream side of the microwave generating source 7 in the flowing direction of the reactive gas. This solid gold 8 is vaporized by a chemical reaction with the reactive gas excited to a plasma state and the resulting vapor deposits on the substrate 1a.

49. 发明专利

JPH05291197A 失效
公开(公告)号：JPH05291197A
公开(公告)日：1993-11-05
申请号：JP8869092
申请日：1992-04-09
申请人： TOSHIBA CORP
发明人： SAITO SHUICHI , DOI TAKAYOSHI , TANIGUCHI YASUYUKI , NIIMURA TADASHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To be able to control the etching rate and selection ratio when executing etching using etching gas. CONSTITUTION:A method for etching amorphous silicon of material 8 to be etched made of silicon nitride and amorphous silicon sequentially formed on a substrate in etching chamber 1 by exciting etching gas which is introduced into this etching chamber, wherein the etching gas containing of fluorine-based gas of a mixture of carbon tetrafluoride and oxygen at a partial pressure ratio of 3:1 and chloric gas, and wherein the fluorine-based gas is mixed at a partial pressure ratio of about 15-67% to the aforementioned chloric gas.

50. 发明专利

JPH0388328A RESIST ASHING METHOD 失效
公开(公告)号：JPH0388328A
公开(公告)日：1991-04-12
申请号：JP22540089
申请日：1989-08-31
申请人： TOSHIBA CORP
发明人： OOMIYA KAYOKO , SAITO SHUICHI , KATAOKA YOSHINORI
IPC分类号： G03F7/42 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To remove resist uniformly and efficiently by heating polymethyl methacrylate (PMMA), and projecting ultraviolet rays in ozone gas atmosphere. CONSTITUTION:A silicon wafer 16 on which PMMA-based resist is applied is provided on a hot plate 6 in a cell 7. The wafer is uniformly heated. Ozone is introduced into the cell 7 through a plurality of ozone introducing pipes 9. Ultraviolet rays are projected on the resist on the substrate 16 from a low- voltage mercury lamp 4, and the ashing of the resist is performed. At this time, the PMMA-based resist on the substrate is heated to a glass transition point or higher where the molecule oscillation in the resist becomes active. Ultraviolet rays are projected in an ozone gas atmosphere wherein the concentration is 3,000ppm or less so that the illuminate at the surface of the resist becomes at least 1mW/cm or more. Thus excited oxygen atoms are removed from the upper part of the substrate. In this way, the PMMA-based resist can be removed uniformly and efficiently without causing damages in the substrate.

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