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41. 发明专利

JP2010070448A Sintered complex oxide and use thereof 有权
标题翻译：烧结复合氧化物及其使用
公开(公告)号：JP2010070448A
公开(公告)日：2010-04-02
申请号：JP2009162110
申请日：2009-07-08
申请人： Tosoh Corp , 東ソー株式会社
发明人： KURAMOCHI TOSHIHITO , OKASEI EIJI , IIGUSA HITOSHI
IPC分类号： C04B35/453 , C23C14/34
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/62655 , C04B2235/3217 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/77 , C23C14/086
摘要： PROBLEM TO BE SOLVED: To provide a sintered complex oxide which can remarkably suppress an abnormal discharge phenomenon during sputtering when being used as a target.
SOLUTION: The sintered complex oxide includes particles (A) containing zinc oxide, having an average particle diameter of ≤10 μm and having a hexagonal wurtzite structure, and particles (B) containing a metallic element(s) M (M denotes aluminum or the like), having a maximum particle diameter of ≤5 μm and having a spinel structure, wherein when zinc and the metallic element(s) M composing the sintered complex oxide are denoted by atomic ratio, M/(Zn+M)=0.006 to 0.07, and wherein the ratio of the particles having an interparticle distance of ≥0.5 μm between the particles having a spinel structure in the sintered complex oxide to all the particles is ≥10% on a number basis. The above sintered complex oxide is used for film deposition as a sputtering target.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种烧结复合氧化物，其可以在用作靶时显着地抑制溅射期间的异常放电现象。解决方案：烧结复合氧化物包括平均粒径≤10μm且具有六方纤锌矿结构的含有氧化锌的颗粒（A）和含有金属元素M（M表示铝等），其最大粒径≤5μm且具有尖晶石结构，其中当锌和构成烧结复合氧化物的金属元素M以原子比表示时，M /（Zn + M） = 0.006〜0.07，并且其中在复合氧化物烧结体中具有尖晶石结构的颗粒之间的颗粒间距离≥0.5μm的颗粒与所有颗粒的比例在数量上≥10％。上述烧结复合氧化物用作溅射靶的膜沉积。版权所有（C）2010，JPO＆INPIT

42. 发明专利

JP2006315911A Ceramic granule 审中-公开
标题翻译：陶瓷颗粒
公开(公告)号：JP2006315911A
公开(公告)日：2006-11-24
申请号：JP2005140355
申请日：2005-05-12
申请人： Tosoh Corp , 東ソー株式会社
发明人： KURAMOCHI TOSHIHITO , MATSUMURA YUJI , ASANO MUTSUMI
IPC分类号： C04B35/628 , C04B35/14 , C04B35/50
摘要： PROBLEM TO BE SOLVED: To provide a ceramic granule always excellently deformed by pressing during molding, particularly at a low pressure regardless of a granule manufacturing method or water content in the granule and having excellent crushability under low pressure to follow a foreign material such as powdery organic material or metallic powder to easily produce a formed body of mixed powder with the foreign material. SOLUTION: In the ceramic granule obtained by granulating ceramic powder, a ratio (B/A) of the intergranular fine pore diameter B of the ceramic granule to the specific surface area diameter A of the ceramic powder is controlled to 1.3-4.0. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：待解决的问题：提供一种陶瓷颗粒，通常在成型期间特别是在低压下通过压制而始终优异地变形，而不管颗粒制造方法如何，或者颗粒中的含水量，并且在低压下具有优异的压碎性能以跟随异物例如粉状有机材料或金属粉末，以容易地产生与异物混合的粉末的成形体。解决方案：在通过造粒陶瓷粉末获得的陶瓷颗粒中，将陶瓷颗粒的晶间细孔直径B与陶瓷粉末的比表面积直径A的比（B / A）控制在1.3-4.0 。版权所有（C）2007，JPO＆INPIT

43. 发明专利

JP2000210860A GRINDING METHOD FOR SILICON WAFER 失效
公开(公告)号：JP2000210860A
公开(公告)日：2000-08-02
申请号：JP1049199
申请日：1999-01-19
申请人： TOSOH CORP , SPEEDFAM IPEC CO LTD
发明人： KURAMOCHI TOSHIHITO , KUBOTA YOSHITAKA , KIYONO TOSHIHIRO , INOUE HIROAKI
IPC分类号： B24B37/00
摘要： PROBLEM TO BE SOLVED: To remarkably improve a grinding speed and to inhibit the surface flag phenomenon by grinding a wafer while specifying the temperature of a contact surface of a grinding molding mainly composed of silica and a silicon wafer. SOLUTION: A silicon wafer is ground in a state of being pressed to a grinding molding composed mainly of silica (silicon dioxide), and the abrasive liquid is added thereto while sliding the grinding molding and/or silicon wafer. Temperature of a contact surface of the grinding molding and the silicon wafer is above 35 deg.C. The interruption of the grinding work caused by the exchange of deteriorated abrasive cloth and the like can be remarkably reduced, the efficiency in the grinding work can be improved, and the surface flag of a silicon wafer outer peripheral part can be prevented. Relatively to the abrasive waste liquid including the free abrasive grain generated in the process using the abrasive cloth, the grinding can be executed without using the free abrasive grain, so that the free abrasive grain does not exist in the abrasive waste liquid, and the problem on the processing of the waste liquid can be reduced.

44. 发明专利

JPH11267962A POLISHING METHOD AND DEVICE 失效
公开(公告)号：JPH11267962A
公开(公告)日：1999-10-05
申请号：JP7549698
申请日：1998-03-24
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , KUBOTA YOSHITAKA
IPC分类号： B24B37/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To reduce the problem of the waste liquid of a polishing liquid, obtain the polish finish with the same degree as an usual method, make a polishing work efficient, obtain the smoothness of the surface of the material to be polished more quickly and further obtain the greater smoothness without surface flag, in a process for polishing a substrate material. SOLUTION: When the material to be polished is polished, while adding a polishing liquid, while pushing the material to be polished 4 to a surface plate for polishing 1 and rubbingly sliding the surface plate for polishing and/or the material to be polished, the surface plate for polishing 1 is composed mainly of silica (silicon dioxide) and the forming body for polishing surface area incidental member with a bulk density of 0.2-1.5 g/cm and BET ratio polishing and of 10-400 m /g and an average grain diameter of 0.001-0.5 μm. The area 2 in which the forming body for polishing is arranged, stays more inside than the locus 7 of the outer periphery of the material to be polished.

45. 发明专利

JPH11198030A MOLDED BODY FOR POLISHING, SURFACE PLATE FOR POLISHING USING IT AND METHOD OF POLISHING 失效
公开(公告)号：JPH11198030A
公开(公告)日：1999-07-27
申请号：JP543498
申请日：1998-01-14
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , KUBOTA YOSHITAKA
IPC分类号： B24B1/00 , B24B37/12 , B24B37/14 , B24D3/00 , C04B35/10 , C09K3/14 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To provide a molded body for polishing and a surface plate for polishing, in which the molded body is used, in addition to the method of polishing, which can alleviate the burden of the problem of waste liquid, which allows efficient polishing to a material to be polished in spite of the same degree of finishing in polishing as that attained by the conventional method, and which can increase the efficiency of polishing work owing partly to high durability of the molded body for polishing, in the process of polishing a semiconductor substrate such as a silicone wafer, the material for substrates such as an oxide substrate, and the material for optical instruments requiring precise processing by employing such an abrasive liquid as containing no free, abrasive grains or as containing a little quantity of free, abrasive grains. SOLUTION: A molded body for polishing consists mainly of alumina. Its bulk density is not less than 0.4 g/cm and not more than 2.8 g/cm , its BET ratio surface area is not less than 5 m /g and not more than 250 m /g, and its mean grain size is not less than 0.001 μm and not more than 0.5 μm. This molded body for polishing is used both in the surface plate for polishing and in the method of polishing.

46. 发明专利

JPH11138447A POLISHING MOLDING, POLISHING SURFACE PLATE AND POLISHING METHOD USING THE SAME 失效
公开(公告)号：JPH11138447A
公开(公告)日：1999-05-25
申请号：JP31326897
申请日：1997-11-14
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , KUBOTA YOSHITAKA
IPC分类号： B24D3/00 , B24D7/06 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To enable excellent polishing by molding and working a polishing molding of silica powder, chamfering its boundary portion between a polishing surface and a widthwise surface, assembling the molding into a polishing surface plate, and thereby using polishing fluid containing no floating abrasive grains. SOLUTION: A polishing molding 3 suitable for polishing substrate material of an oxide substrate such as silicon wafer or lithium niobate contains mainly 90 wt.% or more of silica component. In such a molding, a boundary between a polishing surface in contact with the material to be polished of the polishing molding 3 and a widthwise surface is chamfered. An angle 4 formed by a tangential line in the entering direction of the polished material at a contact point, and a tangential line 2 in the widthwise direction of the polishing molding at the contact point shows a counterclockwise value with the tangential line 1 being a reference. The polishing molding 3 preferably shows bulk density ranging between 0.2 and 1.5 g/cm , a BET specific surface area ranging between 10 and 400 m /g, a mean grain size ranging between 0.001 and 0.5 μm.

47. 发明专利

JPH08188465A ELECTROCONDUCTIVE CERAMIC AND ITS PRODUCTION 失效
公开(公告)号：JPH08188465A
公开(公告)日：1996-07-23
申请号：JP202395
申请日：1995-01-10
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , MORI TOSHIYUKI , YAMAMURA HIROSHI
IPC分类号： C04B35/00 , C01F11/00 , C01G19/00 , C04B35/495 , H01B1/06
摘要： PURPOSE: To obtain an electroconductive ceramic improved an ionic conductivity in a temperature range in which conventional Ba2 In2 O5 has extremely low ionic conductivity. CONSTITUTION: This electroconductive ceramic is an oxide ceramic shown by Ba-In-Sn-O in the molecular ratio of Ba:In:Sn of 1:(1-x):x (0

48. 发明专利

JPH07301180A PIEZOELECTRIC PUMP 失效
公开(公告)号：JPH07301180A
公开(公告)日：1995-11-14
申请号：JP9331194
申请日：1994-05-02
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , OSADA HIRONARI , KUDO MASAYUKI , OKAMURA TOSHIHIKO , KOIKE TOMOKAZU
IPC分类号： F04B43/04
摘要： PURPOSE:To provide a compact pump by holding a peripheral part of a disc- shaped piezoelectric vibrator with flat casings provided with an intake port and a discharge port for fluid on one side, and setting an electrostatic capacity of the piezoelectric vibrator after installation to indicate a specific value to the electrostatic capacity of the piezoelectric vibrator before installation. CONSTITUTION:A peripheral part of a disc-shaped piezoelectric vibrator 13 is held with flat casings 11a-11c having shield materials of an outer diameter similar to the diameter of the piezoelectric vibrator 13, and an inner diameter of 80% or more of the diameter of the piezoelectric vibrator 13 to be fixed. The casing 11a is provided with an intake port and a discharge port 16, 16' for fluid, and the casing 11b is provided with intake/discharge check valves 12, 12'. In this piezoelectric pump, the piezoelectric vibrator 13 which indicates an electrostatic capacity after installation of 90% or more of the electrostatic capacity of the piezoelectric vibrator 13 before installation in a commertial power supply frequency is used. The pump can thus be formed compact without deteriorating pump characteristics.

49. 发明专利

JPH07257970A ELECTRIC CONDUCTIVE CERAMICS 失效
公开(公告)号：JPH07257970A
公开(公告)日：1995-10-09
申请号：JP4844194
申请日：1994-03-18
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , OSADA HIRONARI
IPC分类号： C04B35/48 , C04B35/50 , H01B1/08
摘要： PURPOSE:To enhance the electric conductivity at a point of time at which temp. is raised to measurement temp. by specifying the mol fraction of Zr to (Zr+Y+Mn). CONSTITUTION:A Zr compd., a Y compd. and an Mn compd. are used so as to satisfy 0.5 pressure and sintered at 1,400-1,650 deg.C.

50. 发明专利

JPH07215763A ELECTRICAL CONDUCTIVE CERAMICS 失效
公开(公告)号：JPH07215763A
公开(公告)日：1995-08-15
申请号：JP973294
申请日：1994-01-31
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , MORI TOSHIYUKI , YAMAMURA HIROSHI
IPC分类号： C04B35/00 , C04B35/495 , H01B1/08
摘要： PURPOSE:To randomly arrange oxygen defects up to a low temp. and to obtain electrical conductive ceramics having improved ionic conductivity in a temp. region in which ionic conductivity is remarkably low previously by using Ba2In2 O5 as a base and adding a proper additive. CONSTITUTION:Powders of oxides of Ba, Pb and In are dry- or wet-mixed in a prescribed ratio, calcined, compacted and.fired to produce the objective electrical conductive ceramics made from a compd. represented by the general formula, (Ba1-xPbx)2In2O5 (where 0

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