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41. 发明专利

JP2005101544A Heat-flow rate control system and evaluation system of endothermic/exothermic characteristics of thermoelectric conversion module 有权
标题翻译：热电转换模块的内热/外热特性的热流量控制系统和评估系统
公开(公告)号：JP2005101544A
公开(公告)日：2005-04-14
申请号：JP2004228477
申请日：2004-08-04
申请人： Toshiba Corp , 株式会社東芝
发明人： SASAKI KEIICHI , SHINDOU TAKAHIKO , ITO YOSHIYASU , HINO TAKEHISA , NAKATANI YUJIRO , TAKAKU REKI , MURAKAMI KAZUYA , MOCHIZUKI TOSHIAKI , OISHI TAKASHI
IPC分类号： F25B21/02 , H01L35/28 , H01L35/30 , H02N11/00
摘要： PROBLEM TO BE SOLVED: To provide a heat-flow rate control system by which energy utilization efficiency is improved by making the best use of endothermic/exothermic reactions of thermoelectric conversion modules, a controllable temperature range is expanded, and a degree of freedom of sizes of the thermoelectric conversion modules is increased.
SOLUTION: An intense heat conductive adhesive material 4 is joined to the top face of a chamber 7, and an endothermic face of the thermoelectric conversion module 6c is joined to the top face of the intense heat conductive adhesive material 4. The intense heat conductive adhesive material 4, a heat conductive block 5 and the adhesive material 4 are joined in turn to an exothermic face opposite to the endothermic face of the module 6c and laminated, then an endothermic face of the module 6b is joined to the top face of the adhesive material 4. The adhesive material 4, the heat conductive block 5 and the adhesive material 4 are joined in turn to an exothermic face of the module 6b and laminated, then an endothermic face of the module 6a is joined to the top face of the adhesive material 4. The adhesive material 4 is joined to an exothermic face of the module 6a, and the adhesive material 4 is linked to the bottom face of a chamber 8, and driving current values of these modules 6a to 6c are controlled every module.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供通过充分利用热电转换模块的吸热/放热反应来提高能量利用效率的热流量控制系统，可控温度范围扩大，热电转换模块的尺寸自由度增加。解决方案：强烈的导热粘合材料4连接到腔室7的顶面，并且热电转换模块6c的吸热面接合到强导热粘合剂材料4的顶面。强烈的导热性粘合剂材料4，导热块5和粘合剂材料4依次连接到与模块6c的吸热面相反的放热面并层压，然后将模块6b的吸热面接合到顶面将粘合剂材料4，导热块5和粘合剂材料4依次连接到模块6b的放热面并层叠，然后将模块6a的吸热面接合到顶面粘合材料4与模块6a的放热面接合，粘合材料4与室8的底面连接，驱动这些模块6a〜6的电流值 c每个模块都被控制。版权所有（C）2005，JPO＆NCIPI

42. 发明专利

JP2004228598A Multi-chip semiconductor device 审中-公开
公开(公告)号：JP2004228598A
公开(公告)日：2004-08-12
申请号：JP2004119405
申请日：2004-04-14
申请人： Toshiba Corp , 株式会社東芝
发明人： SASAKI KEIICHI , MATSUO MIE , HAYASAKA NOBUO , OKUMURA KATSUYA
IPC分类号： H01L25/18 , H01L21/60 , H01L25/065 , H01L25/07
CPC分类号： H01L2224/16 , H01L2224/16225 , H01L2224/17181 , H01L2224/73204 , H01L2924/13091 , H01L2924/15311 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a multi-chip semiconductor device which has a small plan area and excellent thermal dissipation. SOLUTION: In the multi-chip semiconductor device constituted by laminating chips 1 1 , 1 2 and 1 3 having silicon substrates 2 on which elements are integrally formed, a connecting substrate 31 1 having through-holes in which conductive plugs 4 are formed is provided between the two upper and lower adjoining chips 1 1 and 1 2 . The chips 1 1 and 1 2 are electrically connected through the conductive plugs 4. A metal plate 32 with a higher thermal conductivity than that of the connecting substrate 31 1 is provided therein. The chips 1 2 and 1 3 are connected and improved in thermal dissipation by a similar technique. COPYRIGHT: (C)2004,JPO&NCIPI

43. 发明专利

JP2004022984A Substrate for printed wiring 审中-公开
公开(公告)号：JP2004022984A
公开(公告)日：2004-01-22
申请号：JP2002178834
申请日：2002-06-19
申请人： Toshiba Corp , 株式会社東芝
发明人： MURAKAMI KAZUYA , SAWADA AKIRA , KURI YUUJI , SASAKI KEIICHI , KAWAKAMI KAZUTO
IPC分类号： H05K1/02 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To provide a substrate for heat-resistant printed wiring which can relax mechanical stress due to a difference between the thermal expansion coefficient of the substrate and that of an electronic component mounted on the same.
SOLUTION: The substrate for printed wiring is constituted of an insulation layer 11 and a wiring conductor 13 while the surface of the insulation layer 11 for mounting the electronic components 201, 203 is formed into a recessed and projected shape 15. The recess and projection of the surface of the insulation layer open or close following the expansion or the contraction of the electronic components 201, 203, whereby thermal stress is relaxed.
COPYRIGHT: (C)2004,JPO

44. 发明专利

JP2003197855A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003197855A
公开(公告)日：2003-07-11
申请号：JP2001398383
申请日：2001-12-27
申请人： TOSHIBA CORP
发明人： SAWADA KANAKO , SASAKI KEIICHI
IPC分类号： H01L25/18 , H01L21/768 , H01L23/48 , H01L23/52 , H01L25/065 , H01L25/07
摘要： PROBLEM TO BE SOLVED: To reduce a variation in projecting amounts of chip through plugs from the rear face of a substrate. SOLUTION: A metal plug 15c (chip through plug) and a metal plug 15d (detection section) are embedded in the surface of a Si substrate 10, with the metal plug 15d embedded deeper than the metal plug 15c. Next, the rear face of the Si substrate 10 is mechanically ground using a grinding wheel until the metal plug 15d is exposed. Then, the Si substrate 10 is made thinner from the rear face by CMP to allow the metal plug 15c to project from the rear face of the substrate 10. COPYRIGHT: (C)2003,JPO

45. 发明专利

JP2002333398A METHOD AND APPARATUS FOR DIAGNOSING DETERIORATION CAUSED BY POLLUTION 失效
公开(公告)号：JP2002333398A
公开(公告)日：2002-11-22
申请号：JP2001136316
申请日：2001-05-07
申请人： TOSHIBA CORP
发明人： TODO YOKO , SAWADA AKIRA , KANEHIRA KATSUMI , SASAKI KEIICHI , ADACHI KENJI , OKUBO MASAAKI , KIMURA KAZUNARI , IMAI HIROMI , MURAYAMA TADAYOSHI
IPC分类号： G01R31/12 , G01N17/00 , G01N33/20
摘要： PROBLEM TO BE SOLVED: To diagnose the progress of deteriorations in electric equipment by determining the pollution rate of the surface of the electric equipment only requiring the determination of the quantity of environmental factors in the atmospheric air environment, not the recovery of the electric equipment nor direct contact of the surface thereof. SOLUTION: A measuring sample for measuring the harmful degree of the atmospheric environment in which the electric equipment to be diagnosed is used is exposed to the atmospheric air environment for a specified period of time, and then the sample is analyzed to determine the quantities of the environmental factors in the atmospheric air environment. Based on the quantities of the environmental factors thus obtained, the pollution rate of the surface of the electric equipment is determined to diagnose the deteriorations in the electric equipment based on the pollution rate.

46. 发明专利

JP2002289623A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
公开(公告)号：JP2002289623A
公开(公告)日：2002-10-04
申请号：JP2001092542
申请日：2001-03-28
申请人： TOSHIBA CORP
发明人： SASAKI KEIICHI
IPC分类号： H01L23/52 , H01L21/02 , H01L21/3205 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To obtain a highly reliable three dimensional LSI such that an insulation defect or a connection defect can be prevented. SOLUTION: The LSI comprises: a semiconductor substrate 11 having a first semiconductor region 11a and a second semiconductor region 11b outside the first semiconductor region 11a; a conductive plug 12 that penetrates the semiconductor substrate and is surrounded by the first semiconductor region; and an insulating region 13b that penetrates the semiconductor substrate, surrounds the first semiconductor region, and is surrounded by the second semiconductor region.

47. 发明专利

JP2002090413A DIAGNOSTIC APPARATUS FOR INSULATION ABNORMALITY OF HIGH- VOLTAGE DEVICE 失效
公开(公告)号：JP2002090413A
公开(公告)日：2002-03-27
申请号：JP2000282262
申请日：2000-09-18
申请人： TOSHIBA CORP
发明人： SASAKI KEIICHI , SAWADA AKIRA , WATABE TAKESHI , NEMOTO HIDEKI , HIROI KATSUYUKI
IPC分类号： G01R31/12 , G01N27/92 , G01N29/14 , H01H33/56 , H02B13/065 , H02G5/06
摘要： PROBLEM TO BE SOLVED: To provide a diagnostic apparatus, for the insulation abnormality of a high-voltage device, by which a discharged electric charge amount and a discharge part can be estimated even when a partial discharge is generated in the high-voltage device. SOLUTION: A vibration generated in the enclosure of the high-voltage device due to the partial discharge generated by the device is sensed by an AE sensor 15. A leakage current due to the partial discharge is sensed by a CT sensor 17. Sensed results from the AE sensor 15 and the CT sensor 17 and a power- supply signal from the power-supply line 19 of the device are measured by a measuring part 21, respectively. A signal processing operation in which information useful for an abnormality diagnosis is extracted from measured results is performed by a signal processing part 23. On the basis of a signal processed result, the electric charge amount of the partial discharge is calculated by an electric-charge-amount calculation part 27 by referring to an abnormality diagnostic database 25. On the basis of the sensed results by the AE sensor 15 and the CT sensor 17, the partial discharge is estimated by a discharge-part estimation part 31 by referring to a discharge-part estimation database 29.

48. 发明专利

JP2002071666A DEGRADATION LIFE DIAGNOSTIC METHOD FOR ELECTRONIC CIRCUIT BOARD BY DEGRADATION DEGREE MEASURING KIT 失效
公开(公告)号：JP2002071666A
公开(公告)日：2002-03-12
申请号：JP2000255957
申请日：2000-08-25
申请人： TOSHIBA CORP
发明人： TODO YOKO , SAWADA AKIRA , SASAKI KEIICHI , KANEHIRA KATSUMI , ADACHI KENJI , OKUBO MASAAKI , KIMURA KAZUNARI , IMAI HIROMI , MURAYAMA TADAYOSHI
IPC分类号： G01N33/00 , G01N17/04
摘要： PROBLEM TO BE SOLVED: To diagnose the degradation life of an electronic circuit board taking account of influence on the degradation of an environmental factor, at a low cost without the recovery and destructive test of the electronic circuit board. SOLUTION: A diagnostician supplies a user free of charge with a degradation degree measuring kit 1 enclosing a measuring sample for measuring environmental deleterious degree. The user exposes the measuring sample into atmospheric environment for a specified period and then returns it to the diagnostician. The diagnostician analyzes the returned measuring sample to obtain an index value indicating the environmental deleterious degree, diagnoses the degraded state of an electronic circuit board on the basis of the index value and presents a diagnosis result and a prescription 6 to the user for payment.

49. 发明专利

JP2002062252A SYSTEM FOR REAL TIME DIAGNOSIS OF CORROSION LIFE IN METALLIC PORTION USING ENVIRONMENTAL INFORMATION 失效
公开(公告)号：JP2002062252A
公开(公告)日：2002-02-28
申请号：JP2000251355
申请日：2000-08-22
申请人： TOSHIBA CORP
发明人： SASAKI KEIICHI , SAWADA AKIRA , TODO YOKO , KANEHIRA KATSUMI , ADACHI KENJI , OKUBO MASAAKI , KIMURA KAZUNARI , IMAI HIROMI , MURAYAMA TADAYOSHI
IPC分类号： G01N17/00 , G05B23/02 , G06F17/40 , G06Q10/00 , G06Q50/00 , G06Q50/10 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To quickly and inexpensively diagnose in a real time a life and a degree of deterioration of an equipment having a metallic portion to provide a recipe for maintenance of the equipment. SOLUTION: This system has an environment sensor group 4 for measuring environmental factors in the environment where the equipment having the metallic portion is installed, a diagnostic client 3 for monitoring outputs of sensors, a diagnostic server 1 for estimating the life and the degree of the deterioration based on the sensor outputs transmitted from the diagnostic client 3 via the Internet to provide a diagnostic result therein and the recipe to the diagnostic client 3 via the Internet, and a diagnostic database 2 accumulated with a data group required for diagnosis.

50. 发明专利

JP2002043252A METHOD OF MANUFACTURING SEMICONDUCTOR CHIP FOR MULTI- CHIPS 失效
公开(公告)号：JP2002043252A
公开(公告)日：2002-02-08
申请号：JP2000224259
申请日：2000-07-25
申请人： TOSHIBA CORP
发明人： SASAKI KEIICHI , TAKU SHINYA
IPC分类号： H01L23/52 , H01L21/301 , H01L21/312 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To improve the productivity in a process for obtaining a semiconductor chip for multi-chips constituting a multi-chip semiconductor device from a semiconductor wafer having integrated semiconductor elements. SOLUTION: The method comprises a step of adhering a fixing substrate 33 to a first surface of a semiconductor wafer 100, thereby to the substrate 33 the wafer comprising a plurality of semiconductor chips for multi-chips having integrated semiconductor elements on the first surface and through-plugs for constituting a multi-chip semiconductor device, a step of backing the surface of the wafer 100 on which the semiconductor elements are not integrated with the wafer fixed to the substrate 33, a step of forming a passivation layer 35 on the backed surface of the wafer 100 with the wafer fixed to the substrate 33, and a step of selectively removing a part region of the passivation layer 34 to expose the through-plugs 16.

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