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41. 发明专利

JP2010245231A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2010245231A
公开(公告)日：2010-10-28
申请号：JP2009091403
申请日：2009-04-03
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE
IPC分类号： H01S5/125 , H01S5/0625
CPC分类号： H01S5/06258 , H01S5/0265 , H01S5/0425 , H01S5/1212
摘要： PROBLEM TO BE SOLVED: To provide a wavelength tunable semiconductor laser element whose overall length can be made shorter. SOLUTION: The semiconductor laser element 1A includes a gain region 10 provided on a semiconductor substrate 3 and a reflective region 20 provided on the semiconductor substrate 3 adjacently to the gain region 10, and having wavelength-reflectivity characteristics varying periodically at predetermined wavelength intervals. The gain region 10 includes an active layer 101 where light is generated by current injection, a diffraction grating layer 110 provided along the active layer 101, having a diffraction grating 110a whose grating pitch varies in a light propagation direction, and causing loss of the light generated by the active layer 101, a refractive-index variation layer 109 varying in refractive index by the current injection, an anode electrode 106 for injecting current into the active layer 101, and a plurality of anode electrodes 114 arranged side by side in the light propagation direction to inject current into the refractive-index variation layer 109 independently of the active layer 101. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供其长度可以缩短的波长可调谐半导体激光元件。解决方案：半导体激光元件1A包括设置在半导体衬底3上的增益区域10和与增益区域10相邻设置在半导体衬底3上的反射区域20，并且具有以预定波长周期性变化的波长反射特性间隔。增益区域10包括通过电流注入产生光的有源层101，沿着有源层101设置的衍射光栅层110，具有光栅间距在光传播方向上变化的衍射光栅110a，并导致光的损失由有源层101产生的折射率变化层109，通过电流注入的折射率变化的折射率变化层109，用于向有源层101注入电流的阳极电极106和在光中并排配置的多个阳极电极114 传播方向，以独立于活性层101将电流注入折射率变化层109中。版权所有（C）2011，JPO＆INPIT

42. 发明专利

JP2010171329A Wavelength tunable laser 有权
标题翻译：波长能激光
公开(公告)号：JP2010171329A
公开(公告)日：2010-08-05
申请号：JP2009014327
申请日：2009-01-26
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE
IPC分类号： H01S5/14 , G02F1/017
CPC分类号： H01S5/026 , H01S5/1032 , H01S5/4012 , H01S5/4025 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a wavelength tunable laser capable of readily controlling current.
SOLUTION: The wavelength tunable laser 1 includes a high-reflectivity film HR installed at one end S1; a gain region 3, installed at one end S1 side and having two or more parallel optical elements L1 to L4 generating light by current injection respectively; a multiplexer 5 for multiplexing the light generated in the gain region 3; and a reflector 7, installed at the other end S2 which is opposite to one end S1 and having periodical reflection peaks to the multiplexed light, wherein the multiplexer 5 is installed between the gain region 3 and the reflector 7.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够容易地控制电流的波长可调激光器。
解决方案：波长可调激光器1包括安装在一端S1的高反射膜HR; 增益区域3，安装在一端S1侧，并且具有分别通过电流注入产生光的两个或更多个平行光学元件L1至L4; 多路复用器5，用于多路复用在增益区3中产生的光; 以及反射器7，其安装在与一端S1相对的另一端S2，并且对多路复用的光具有周期性反射峰，其中多路复用器5安装在增益区3和反射器7之间。 C）2010，JPO＆INPIT

43. 发明专利

JP2009141130A Semiconductor laser and method of manufacturing the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2009141130A
公开(公告)日：2009-06-25
申请号：JP2007315996
申请日：2007-12-06
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , ICHIKAWA HIROYUKI , FURUKAWA MASAHITO
IPC分类号： H01S5/028
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser with improved resistance to ESD, and to provide a method of manufacturing the same.
SOLUTION: The method has a deposition step of forming a reflecting film with compressive stress of 700 to 2,000 MPa on the end surface of a semiconductor laser body by the ECR sputtering method. Inventors have found that optical absorption in the end surface reduces when high compressive stress works on the reflecting film formed in the semiconductor laser body, thereby improving ESD resistance. Accordingly, a semiconductor laser with high ESD resistance can be obtained because of the film formation process of the semiconductor laser manufacturing method.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有改善的耐ESD性能的半导体激光器，并提供其制造方法。解决方案：该方法具有通过ECR溅射法在半导体激光器主体的端面上形成具有700至2,000MPa压缩应力的反射膜的沉积步骤。发明人已经发现，当在半导体激光器体中形成的反射膜上产生高的压缩应力时，端面的光吸收减小，从而提高耐ESD性。因此，由于半导体激光器制造方法的成膜工艺，可以获得具有高ESD电阻的半导体激光器。版权所有（C）2009，JPO＆INPIT

44. 发明专利

JP2008262003A Optical waveguide and method of manufacturing the same 审中-公开
标题翻译：光波导及其制造方法
公开(公告)号：JP2008262003A
公开(公告)日：2008-10-30
申请号：JP2007104159
申请日：2007-04-11
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SEKI MORIHIRO , HATTORI TETSUYA , FUKUDA CHIE
IPC分类号： G02B6/13 , G02B6/122
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide capable of suppressing the loss of an optical branching even when the core of the optical branching part is short, and to provide a method of manufacturing the same. SOLUTION: The optical waveguide 1 has a substrate, a lower clad, a core 12 and an upper clad. The core 12 has a Y-shaped branching form, in which a first core part 12a, a second core part 12c and a third core part 12d of the core 12 are connected at a core branching section 12b. The core 12 has a part whose core height H is lower as the core width W is broader at the core branching section 12b which is a branching part. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使当光分支部的芯短时也能够抑制光分支的损失的光波导，并且提供其制造方法。解决方案：光波导1具有基板，下包层，芯12和上包层。芯12具有Y形分支形式，其中芯12的第一芯部12a，第二芯部12c和第三芯部12d在芯分支部12b处连接。芯部12具有芯部高度H在作为分支部的芯分支部12b的芯部宽度W较宽的部分。版权所有（C）2009，JPO＆INPIT

45. 发明专利

JP2007163886A Optical waveguide type device, temperature measuring instrument, and thermometric method 有权
标题翻译：光波导型设备，温度测量仪器和热电偶方法
公开(公告)号：JP2007163886A
公开(公告)日：2007-06-28
申请号：JP2005360721
申请日：2005-12-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE
IPC分类号： G02B6/122 , G01K11/12
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide type device that can be suitably used for accurately measuring temperature. SOLUTION: The optical waveguide type device 10 is constituted so that optical waveguides 111, 112 are formed on a substrate 100 and the waveguides 111, 112 are optically coupled with optical couplers 121, 122 respectively to constitute a Mach-Zehnder interferometer. Between the first and second optical couplers 121, 122 in the Mach-Zehnder interferometer, the temperature dependency of the refractive index of a clad in a certain section 112B of the second optical waveguide 112 is different from those in the first waveguide 111 and the other optical waveguide portions 112A, 112C of the second optical waveguide 112. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种适合用于精确测量温度的光波导型装置。解决方案：光波导型器件10被构造成使得光波导111,112形成在衬底100上，并且波导111,112分别与光耦合器121,122光学耦合以构成马赫 - 曾德干涉仪。在马赫 - 策德尔干涉仪中的第一和第二光耦合器121,122之间，第二光波导112的某个部分112B中的包层的折射率的温度依赖性与第一波导111中的折射率不同第二光波导112的光波导部分112A，112C。版权所有（C）2007，JPO＆INPIT

46. 发明专利

JP2006300564A Analyzing device and analyzer 审中-公开
标题翻译：分析装置和分析仪
公开(公告)号：JP2006300564A
公开(公告)日：2006-11-02
申请号：JP2005118816
申请日：2005-04-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE
IPC分类号： G01N21/01 , G01N21/03 , G01N21/27 , G01N21/64 , G01N21/65
摘要： PROBLEM TO BE SOLVED: To provide an analyzing device capable of obtaining the good precision of an irradiation position when a sample is irradiated with light, and an analyzer. SOLUTION: The analyzer 10 is equipped with a substrate 8 having a groove 2 in which the sample (a) is housed, a light waveguide 4 of which one end 4a and other end 4b are optically connected to the groove 2 and a light waveguide 6 of which one end 6a and other end 6b are optically connected to one end 4a of the light waveguide 4 through the groove 2. A light source 12 is optically connected to the other end 4b of the light waveguide 4 and a photodetector 14 is optically connected to the other end 6b of the light waveguide 6. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在用光照射样品时获得照射位置的良好精度的分析装置和分析器。解决方案：分析仪10配备有具有容纳样品（a）的槽2的基板8，一个端部4a和另一个端部4b光学连接到槽2的光波导4和光波导6的一端6a和另一端6b通过槽2与光波导4的一端4a光学连接。光源12光连接到光波导4的另一端4b，光电检测器14 光学连接到光波导6的另一端6b。版权所有（C）2007，JPO＆INPIT

47. 发明专利

JP2006119379A Manufacturing method of optical waveguide device and optical waveguide device manufactured thereby 审中-公开
标题翻译：光波导器件的制造方法及其制造的光波导器件
公开(公告)号：JP2006119379A
公开(公告)日：2006-05-11
申请号：JP2004307270
申请日：2004-10-21
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , AKIBA KATSUYOSHI , SHIOZUKA KOJI
IPC分类号： G02B6/13 , G02B6/122
CPC分类号： G02B6/132
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an optical waveguide device, a method capable of suppressing cloudiness in a clad layer and increasing fluorine density in the clad layer. SOLUTION: The manufacturing method of the optical waveguide device 1 is characterized by: a process of forming, on the main surface of a substrate, a first clad layer made up of fused quartz with fluorine added; a process of forming a first protective layer made up of pure fused quartz on the main surface of the first clad layer; a process of forming a groove penetrating the first protective layer and reaching the first clad layer; a process of forming, in the groove, a core made up of pure fused quartz; and a process of forming a second clad layer made up of fused quartz added with fluorine, on the main surface of the first protective layer and on the core. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种光波导装置的制造方法，能够抑制包覆层中的浑浊性并且增加包覆层中的氟密度的方法。解决方案：光波导器件1的制造方法的特征在于：在衬底的主表面上形成由熔融石英与氟加成的第一覆层; 在第一覆盖层的主表面上形成由纯熔融石英构成的第一保护层的工艺; 形成贯穿所述第一保护层并到达所述第一覆盖层的槽的工序; 在槽中形成由纯熔融石英构成的芯的过程; 以及在第一保护层的主表面和芯上形成由添加有氟的熔融石英构成的第二包覆层的工序。版权所有（C）2006，JPO＆NCIPI

48. 发明专利

JP2005352202A Optical circuit, optical multiplexer, and optical demultiplexer 审中-公开
标题翻译：光学电路，光学多路复用器和光学解复用器
公开(公告)号：JP2005352202A
公开(公告)日：2005-12-22
申请号：JP2004173093
申请日：2004-06-10
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE
IPC分类号： G02B6/12 , G02B6/26 , G02B6/293 , G02B6/34 , G02F1/01 , G02F1/313 , H04J14/02
CPC分类号： G02B6/4246 , G02B6/29353 , G02B6/29355 , G02B6/2938 , G02B6/29385 , H04J14/0206 , H04J14/0212
摘要： PROBLEM TO BE SOLVED: To provide an optical circuit, an optical multiplexer, and an optical demultiplexer by which light can be multiplexed or demultiplexed even when the wavelengths of a plurality of input wavelength components are changed. SOLUTION: The optical circuit 10 functioning as the optical multiplexer is provided to a substrate 16 and is equipped with a 1st Mach Zehnder interferometer M1, a 2nd Mach Zehnder interferometer M2, and a 3rd Mach Zehnder interferometer M3 which have similar structures. For example, the 1st Mach Zehnder interferometer M1 has a 1st port r1 provided to one end M1a and a 2nd port r2 and a 3rd port r3 provided to another end M1b. The 1st Mach Zehnder interferometer M1 has a 1st optical coupler C1, a 1st optical waveguide w1 and a 2nd optical waveguide w2, and a 2nd optical coupler C2. First heaters H1, H11 are provided on the 1st optical waveguide w1 and the 2nd optical waveguide w2, respectively. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使当多个输入波长分量的波长改变时，提供光电路，光复用器和光解复用器，通过该解复用器光也可以被复用或解复用光。解决方案：用作光复用器的光电路10被提供给基板16，并且配备有具有相似结构的第一马赫曾德尔干涉仪M1，第二马赫曾德尔干涉仪M2和第三马赫赫德干涉仪M3。例如，第一马赫策德尔干涉仪M1具有提供给另一端M1b的一端M1a和第二端口r2的第一端口r1和第三端口r3。第一马赫策德尔干涉仪M1具有第一光耦合器C1，第一光波导w1和第二光波导w2，以及第二光耦合器C2。第一加热器H1，H11分别设置在第一光波导w1和第二光波导w2上。版权所有（C）2006，JPO＆NCIPI

49. 发明专利

JP2005221599A Optical waveguide and method for forming optical waveguide film 有权
标题翻译：光波导和形成光波导膜的方法
公开(公告)号：JP2005221599A
公开(公告)日：2005-08-18
申请号：JP2004027518
申请日：2004-02-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , HATTORI TETSUYA
IPC分类号： G02B6/122 , G02B6/10 , G02B6/13 , G02B6/132 , G02B6/136
CPC分类号： G02B6/132 , G02B6/136
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide which has a large difference between the refractive index of the core and that of the clad layer and which has a small optical loss as well as a small size, and also to provide a method for manufacturing the waveguide. SOLUTION: A plasma CVD device is used which is equipped with two or more high frequency power sources 44, 54, a means (coil 50) for generating plasma in a vacuum container 30, and an electrode plate 40 for placing a substrate on. A gaseous starting material is introduced into the vacuum container, a high frequency from the plasma generating high frequency power source 54 is applied to the coil 50. As a result, the gas is guided into a high frequency plasma state, and simultaneously a high frequency with a prescribed frequency value is generated from the stress adjusting high frequency power source 44 connected to the electrode plate, an optical waveguide film is formed while the electric power is adjusted. Consequently, the optical waveguide is obtained which is dense, and has large relative index difference and small transmission loss. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种光学波导，其在芯的折射率与包层的折射率之间具有很大的差异，并且具有小的光学损耗以及小的尺寸，并且还提供一种制造波导的方法。解决方案：使用等离子体CVD装置，其配备有两个或更多个高频电源44,54，用于在真空容器30中产生等离子体的装置（线圈50）和用于放置基板的电极板40 上。将气态原料引入真空容器中，将来自等离子体产生高频电源54的高频施加到线圈50.结果，气体被引导到高频等离子体状态，同时高频等离子体状态从与电极板连接的应力调整高频电源44产生规定的频率值，在调整电力的同时形成光波导膜。因此，得到密集的光波导，相对折射率差大，传输损耗小。版权所有（C）2005，JPO＆NCIPI

50. 发明专利

JP2004021220A Manufacture method of plane waveguide type diffraction grating element 有权
$Manufacture method of plane waveguide type diffraction grating element$
公开(公告)号：JP2004021220A
公开(公告)日：2004-01-22
申请号：JP2002180290
申请日：2002-06-20
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , INOUE SUSUMU
IPC分类号： G02B6/122 , G02B5/18
摘要： PROBLEM TO BE SOLVED: To form an excellent refractive index modulation pattern in the core of an optical waveguide. SOLUTION: A plane waveguide type optical circuit where an under-clad layer 21, a core layer 20 obtained by patterning an optical waveguide layer 15, and an over-clad layer 22 covering over the core layer 20 or the like are formed on an Si substrate 10 is prepared as an optical circuit being an object where a diffraction grating is to be formed (figure 1 (a) to (c)). By irradiating the plane waveguide type optical circuit with an ultraviolet laser beam 50 through a phase grating mask 30, the diffraction grating 25 is formed in the core layer 20 (figure 1 (d)) by the refractive index modulation pattern. At such a time, the optical circuit is irradiated with the ultraviolet ray under an irradiation condition that reflected light by the base plate 10 being the ultraviolet ray is set to pass through the outside of a grating forming area in the core layer 20. COPYRIGHT: (C)2004,JPO

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