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41. 发明专利

JPH0695387A PHOTORESIST COMPOSITION 失效
公开(公告)号：JPH0695387A
公开(公告)日：1994-04-08
申请号：JP31369591
申请日：1991-10-31
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： G03F7/023 , G03F7/004 , G03F7/029 , G03F7/039 , G03F7/075 , H01L21/027
摘要： PURPOSE:To provide a novel photoresist compsn. suitable for forming a fine pattern and to provide a novel photoresist compsn. usable as a compsn. having satisfactory shelf stability. CONSTITUTION:A resin convertible into an alkali-soluble resin when protective groups such as tertiary butyl groups are removed by fluorine and a compd. which releases fluorine when irradiated with active energy beams such as light, e.g. an s-triazinefluoro compd. are used as constituents. The objective photoresist compsn. capable of forming a fine pattern and also capable of ensuring satisfactory shelf stability can be obtd.

42. 发明专利

JPH05210130A ORGANIC NONLINEAR OPTICAL MATERIAL AND NONLINEAR OPTICAL ELEMENT 失效
公开(公告)号：JPH05210130A
公开(公告)日：1993-08-20
申请号：JP5343791
申请日：1991-02-25
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： C09K9/02 , G02F1/35 , G02F1/355 , G02F1/361
摘要： PURPOSE:To obtain an org. nonlinear material which is useful for various purposes such as optical information processing, optical communication and optoelectronics and has enough nonlinear optical characteristics, large 2-dimensional and 3-dimensional nonlinearily, and fast responsibility. CONSTITUTION:This org. nonlinear optical material contains at least one kind of compd. selected from aromatic sulfone amines, aromatic sulfone amides and derivs. of these. Nonlinear optical elements are manufactured by using this nonlinear optical material.

43. 发明专利

JPH05183057A METHOD OF HOLE FORMATION AND MANUFACTURE OF ELECTRONIC MATERIALS BY SAME METHOD 失效
公开(公告)号：JPH05183057A
公开(公告)日：1993-07-23
申请号：JP36052791
申请日：1991-12-30
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PURPOSE:To improve the uniformity of a plane by using the same mask as used for the formation of holes such as contact holes and performing overlay exposure using resist of an opposite polarity. CONSTITUTION:Negative resist is exposed using a mask provided with a large number of contact holes. A pattern of resist 3 of one polarity is formed on an interlayer insulating film 11 on a substrate 1. An insular pattern is formed, using positive resist, in a manner that a hole 2 will be overlaied therewith. A resist pattern 5 of the opposite polarity is formed. Etch back is performed using this resist pattern 5 as a mask. This improves the uniformity of a plane.

44. 发明专利

JPH04372110A RESIST PATTERN FORMATION METHOD 失效
公开(公告)号：JPH04372110A
公开(公告)日：1992-12-25
申请号：JP17610991
申请日：1991-06-20
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027
摘要： PURPOSE:To raise the alignment accuracy in a lithography process and improve the shape of a resist pattern when forming the resist pattern. CONSTITUTION:This is a method of forming a resist pattern by developing a positive resist layer in alkali after regularly exposing the positive resist layer made on a board, and this is characterized by preliminarily exposing the positive resist layer on the alignment mark section of a board selectively before the regular exposure, and next, processing the surface in alkali.

45. 发明专利

JPH04221814A PATTERN FORMING METHOD 失效
公开(公告)号：JPH04221814A
公开(公告)日：1992-08-12
申请号：JP41325790
申请日：1990-12-21
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： H01L21/027
摘要： PURPOSE:To put a high-sensitivity resist to practical use by preventing the variation of the resolution characteristic, such as sensitivity, etc., of the resist caused by the variation of the period the resist is left as it is after application and, at the same time, easily preventing the resist from reflecting light. CONSTITUTION:In the course of a pattern forming method which patterns a resist film of a chemically amplified resist, etc., formed on a substrate to be worked of semiconductor wafer, etc., the characteristic variation of the resist is prevented by forming a water-soluble high polymer film on the resist film or keeping the surface of the substrate to be worked in the atmosphere of

46. 发明专利

JPH0456178A METHOD FOR FORMING SUPERCONDUCTIVE MATERIAL PATTERN 失效
公开(公告)号：JPH0456178A
公开(公告)日：1992-02-24
申请号：JP16313490
申请日：1990-06-21
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： H01L39/24
摘要： PURPOSE:To enable a superconductive material to be subjected to patterning easily and with improved controllability, achieve an accurate patterning, prevent characteristic change, and achieve patterning even to a shape such as a mushroom type by forming a superconductive material part by utilizing an opening of a film to be machined which is formed by an opaque material. CONSTITUTION:A film to be machined 2 is formed on a first main surface 1a of a transparent substrate 1 and the film 2 is subjected to patterning, thus forming an opening 3. Then, light is emitted (light is shown by P) from a second main surface 1b of the substrate and light is emitted only to the opening 3 of the pattern 2a. Then, a superconductive material pattern is formed by selectively forming a superconductive material part 4 on the opening 3 by a superconductive material source gas G for forming a superconductive material pattern, thus obtaining the superconductive material pattern. Thus, by forming a pattern by forming the part 4 while utilizing the opening 3 of the pattern 2a in this manner, the superconductive material pattern can be formed with improved controllability and accuracy and can be machined easily and fully, thus preventing a fine characteristic change. Also, a mushroom type superconductive material pattern can also be formed easily.

47. 发明专利

JPH1038812A MASK DEFECT DETECTING METHOD 失效
公开(公告)号：JPH1038812A
公开(公告)日：1998-02-13
申请号：JP18898496
申请日：1996-07-18
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： G01N21/88 , G01N21/956 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To shorten a detection time by dividing a pattern formed in a mask to be detected into the first detection area and the second detection area and detecting a defect in every divided area with different detection sensitiveness. SOLUTION: In a substrate 10, an active area 12 is formed in the position surrounded by an element separation area consisting of a LOCOS oxide film, and two linear gate patterns 13 are arranged in parallel. The gate pattern 13 in a mask to be detected is divided into the first detection area, which corresponds to an area 13a requiring high dimensional precision and needs highly sensitive detection, and the second detection area, which corresponds to a rough area 13b and needs detection with ordinary sensitiveness. Only the first detection area requiring fine defect detection for high dimensional precision is detected with high sensitiveness, and the second detection area requiring less dimensional precision is detected with sensitiveness lower than that for the first detection area, and as a result, a detection time can be shortened.

48. 发明专利

JPH1027742A EXPOSURE METHOD 失效
公开(公告)号：JPH1027742A
公开(公告)日：1998-01-27
申请号：JP18199996
申请日：1996-07-11
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the dimensional accuracy of a resist pattern by offsetting the dispersion in the dimensional intrinsic accuracy of an exposure pattern in an exposure mask by the dispersion in the illumination intensity distribution fluctuated by the zoom magnification of a capacitor lens. SOLUTION: Within the exposure method wherein an exposure mask is irradiated with exposure beams passing through a zoom capacitor lens, an experimental exposure using the zoom magnification of the capacitor lens as a parameter is performed on a wafer using an exposure mask (S11) to form a resist pattern by developing the resist (S12). Next, the dimensional difference in the resist patterns in the central and peripheral parts in each exposure shot in different zoom magnification are processed as the dimensional dispersion (S13). The zoom magnification minimizing the dimensional dispersion is qualified as the optimum magnification of said exposure mask (S14, S15). Finally, the zoom magnification is set up at the optimum magnification (S16) so as to irradiate said exposure mask with the exposure beams passing through this capacitor lens to expose the resist on the wafer (S17).

49. 发明专利

JPH09325496A PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH09325496A
公开(公告)日：1997-12-16
申请号：JP14189796
申请日：1996-06-04
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent deactivation and form a good pattern by containing one kind of aliphatic amine and aliphatic amine salt in a photosensitive composition containing a photosensitive compound. SOLUTION: At least one kind of aliphatic amine and aliphatic amine salt is contained in a photosensitive composition containing at least one kind of a photosensitive compound at the quantity of 1wt.% or below in the form of a simgle substance or a mixture. A necessary and sufficient effect can be obtained when the quantity of 1wt.%, preferably 0.01wt.%-1wt.%, is contained. 2-mino-cyclohexanol hydrochloride, 2-amino-2-methyl-1, 3-propanediol, 2-amino-2- ethyl-1,3-propanediol, or 6-amino-2-ethyl-1-hexanol can be preferably used as the aliphatic amine.

50. 发明专利

JPH08321487A METHOD AND EQUIPMENT FOR ETCHING 失效
公开(公告)号：JPH08321487A
公开(公告)日：1996-12-03
申请号：JP12640195
申请日：1995-05-25
申请人： SONY CORP
发明人： TO YOICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To attain effective etching using DUV irradiation jointly without necessitating a separate equipment and, accordingly, without bringing about an increase in the area of installation or an increase in the number of processes. CONSTITUTION: In etching equipment having an etching main chamber 2 wherein a material l to be etched (a semiconductor wafer or the like) is disposed and etched, a DUV irradiation mechanism 3 casting a DUV light uniformly at least on a surface to be etched of the material l is incorporated in the etching main chamber 2 or a load lock chamber adjacent thereto. The etching equipment being used, the dry etching resistance of a resist is improved by casting the DUV light thereon before etching, and then the etching is conducted.

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