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    • 41. 发明专利
    • VACUUM PUMP
    • JPH03111690A
    • 1991-05-13
    • JP24756689
    • 1989-09-22
    • TOKUDA SEISAKUSHO
    • KURIYAMA NOBORU
    • F04C18/16F04C23/00F04C28/26
    • PURPOSE:To reduce energy loss, and to achieve smooth gas exhaust by forming screw parts in multiple stages on a screw rotor, and by providing a relief valve on an inter-stage position of the screw rotor of a casing, while a gas introducing port on a screw rotor position on the exhaust side. CONSTITUTION:Screw rotors 7, 8, 9 are coaxially installed along shaft at a certain interval, and a screw part of a screw rotor is formed in each stage so as to form the transfer capacity of the screw rotor on the exhaust side smaller than that on the suction side. On the outer surface of a casing 2 on the side of each gap, relief valves 10, 11 are mounted, so as to prevent the pressure of the gas exceeding which gas is in the gap between the respective screw rotors 7, 8, 9. A gas introduction port 12 is connected to the side surface of the casing 2 on the position of the third stage screw rotor, through which the gas in a form of air pressure is supplied in the casing 2 in the vicinity of the third screw rotor 9, and a certain flow of gas stream is formed in the casing 2 and is discharged from an exhaust port 4 at the same time.
    • 45. 发明专利
    • EMISSION CONTROLLER
    • JPH01106210A
    • 1989-04-24
    • JP26419887
    • 1987-10-20
    • TOKUDA SEISAKUSHO
    • KURIYAMA NOBORU
    • G01N27/64G01L21/32G05F1/56H01J41/02H03K17/08
    • PURPOSE:To improve responsiveness by comparing an emission current detecting value with a reference value and controlling the ON/OFF operation of filament current based on the compared output. CONSTITUTION:In the emission controller, a triode type ionization vacuum gauge 10 is constituted of a filament 11, a glid 12 and a collector 13. An ion current measuring circuit 14 is connected to the collector 13 in the vacuum gauge 10 and a constant voltage circuit 15 is connected to the glid 12. On the other hand, power is supplied from a power source 21 to the filament 11 through a power transistor (Tr) Q1 and a switch 22. Emission current is detected by a resistor R4. In addition, the controller is provided with a Schmitt circuit constituted of an operational amplifier 23, a reference voltage power supply 24, etc., a photocoupler 25 and an abnormality detecting circuit 26. Thus, the Tr Q1 can be previously prevented from being damaged due to the short of the filament circuit.
    • 46. 发明专利
    • METHOD AND DEVICE FOR ARC BREAKING OF GLOW DISCHARGER USING HIGH-FREQUENCY POWER SUPPLY
    • JPS63297559A
    • 1988-12-05
    • JP20855887
    • 1987-08-22
    • TOKUDA SEISAKUSHO
    • KURIYAMA NOBORU
    • C23C14/54
    • PURPOSE:To eliminate the damage of a sample and the generation of splashes so that a glow discharge is smoothly continued by interrupting a power supply upon detection of a change element at the time of a shift from the glow discharge to arc discharge and restarting the discharge after a processing period. CONSTITUTION:High-frequency current of a prescribed frequency is supplied from a high-frequency power supply PS via a coupling capacitor C, etc., to a glow discharger DD. The components superposed with the frequency of the power supply PS and the frequency higher than said frequency are removed from the DC voltage VDC generated between the electrodes of the discharger DD by a filter circuit F. The change in the output level of the DC voltage VDC' of the circuit F from which the superposed components mentioned above are removed is detected by a control circuit CC. The feeding of the above-mentioned power supply PS is stopped when the above-mentioned level falls below the prescribed value. The circuit CC starts the power supply PS after lapse of the time when the discharging can be restarted and thereafter, the discharge is shifted to the normal discharge. The glow discharge is thereby continued without problems even if said discharge is the large-power glow discharge having an easy tendency to shift to the arc discharge.
    • 47. 发明专利
    • ELECTROSTATIC CHUCK
    • JPS63134145A
    • 1988-06-06
    • JP27941586
    • 1986-11-22
    • TOKUDA SEISAKUSHO
    • KURIYAMA NOBORU
    • B23Q3/15H01L21/68H01L21/683
    • PURPOSE:To cool a wafer so efficiently, by installing an electristatic chuck electrode in upper and lower surfaces of a tray, impressing DC voltage from an electric conductor of a water cooled electrode, and clamping the tray and the wafer as well as the tray and the water cooled electrode to an electrostatic chuck. CONSTITUTION:The wafer 20 mounted on a tray 19 is conveyed to the inside of a vacuum vessel 1, and mounted on a pin 18 piercing through a flat plate part of a lifting shaft 6 and an electrode 8. And, this lifting shaft 6 is made to go up, and the tray 19 is mounted on the electrode 8, while a peripheral edge of the tray 19 is made contact with a projecting part 2 of the vessel 1 and pressed thereto. Under this state, a conductive spring 14 and an electrostatic chuck electrode 23 of the tray 19 are made contact with each other. At this time, DC voltage is impressed via an electrostatic wire 17, and the wafer 20 is clamped to the tray and, in turn, the tray onto the electrode 8 electrostatically, respectively. Thus, the tray 19 is positively clamped to a water cooled electrode 8, thus positive cooling for the wafer 20 is performable.
    • 49. 发明专利
    • SPUTTERING DEVICE
    • JPS61261473A
    • 1986-11-19
    • JP10341385
    • 1985-05-15
    • TOKUDA SEISAKUSHO
    • KURIYAMA NOBORU
    • C23C14/34
    • PURPOSE:To form a sputtered film having high purity by providing a nozzle which discharges intermittently an inert gas and a power source for sputtering and making possible the impression of intermittent voltages between a cathode and anode in synchronization with the gas pulses. CONSTITUTION:The inert gas stored in a gas vessel 10 is intermittently injected onto a target 5 provided between the cathode 2 and the anode 3 via the nozzle 12 by the pulse signal from a pulse controller 15 and 1-0.1Pa pressure is exerted onto the target 5. The voltage is intermittently impressed between the cathode 2 and the anode 3 from the power source 4 for sputtering in synchronization with the gas pulses from the nozzle 12, by which 50-100kW electric power is thrown thereto. Plasma of high density is generated between the above- mentioned two electrodes 2 and 3 and the target metal is stuck onto a substrate 6 without increasing the temp. of the target 5 and the substrate 6.
    • 50. 发明专利
    • Electrostatic chucking device of sputtering device
    • 溅射装置的静电切割装置
    • JPS59129779A
    • 1984-07-26
    • JP288783
    • 1983-01-13
    • Tokuda Seisakusho Ltd
    • KURIYAMA NOBORU
    • C23C14/40C23C14/50C23F4/00
    • C23C14/50
    • PURPOSE:To chuck electrostatically an object to be treated by providing an insulating layer on the surface of an electrode on which the object to be treated is placed, charging between the electrode and the object with said insulating layer in-between, and inserting a current limiting resistor in a current conducting passage for charging. CONSTITUTION:An object 30 to be treated is fed into a treating chamber 11 and is placed on a lifting table 25 in a descending state. The inside of the chamber 11 is put in the condition of enabling formation of plasma ion in this state. The table 25 is then moved upward to bring the top surface of the object 30 into contact with an insulating layer 24, and a DC power source E is connected to a high frequency electrode 23 by closing a switch S1 and opening S2. The object 30 is grounded via the table 25 and a current limiting resistor R and therefore the object 30 is brought into tight contact with the insulator 24 by the electrostatic attraction force between the same and the electrode 23. The table 25 is then lowered and sputtering is performed.
    • 目的:通过在其上放置待处理物体的电极的表面上设置绝缘层来静电吸附待处理的物体,使电极与物体之间的绝缘层在其间进行充电,并且插入电流 用于充电的电流传导通道中的限流电阻。 构成:待处理物体30被送入处理室11,并且处于下降状态而放置在升降台25上。 在这种状态下,室11的内部处于能够形成等离子体离子的状态。 然后将工作台25向上移动以使物体30的顶表面与绝缘层24接触,并且通过闭合开关S1和开口S2将DC电源E连接到高频电极23。 物体30经由工作台25和限流电阻器R接地,因此物体30通过其与电极23之间的静电吸引力与绝缘体24紧密接触。然后将工作台25降低并进行溅射 被执行。