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    • 42. 发明专利
    • CLEANING OF SOLID SURFACE
    • JPH03116832A
    • 1991-05-17
    • JP25207689
    • 1989-09-29
    • MITSUBISHI ELECTRIC CORP
    • OMORI TOSHIAKISUGANO ITARUFUKUMOTO HAYAAKI
    • B08B7/00B24C1/00H01L21/304
    • PURPOSE:To enable any foreign matters or pollutants sticked to by intensive adhesion to be efficiently removed from a solid surface by a method wherein fine frozen particles formed by freezing a liquid are jetted to the surface of a solid to be cleaned up to perform the cleaning up process while the hardness of the fine frozen particles is changed to adjust the damage to the surface of the solid to be cleaned up. CONSTITUTION:A liquid such as water or alcohol, etc., is frozen to manufacture fine frozen particles 7 so as to be jetted from a jetting nozzle 6 to the surface of a solid 2 to be cleaned up by the pressure of a carrier gas e.g. nitrogen gas, etc. When the fine frozen particles 7 are jetted, the hardness of the particles 7 is specified to be equivalent to or not to exceed that of the solid 2 to be cleaned up so that the particles 7 may not do damage to the surface of the solid 2 and the like. The hardness of the fine frozen particles 7 is adjusted by changing the kind of the fluid to be frozen. The fine frozen particles 7 colliding with the solid 2 to be cleaned up are crushed to finer frozen particles 11 due to the difference in their hardness so that the crushed fine frozen particles 11 may collide with fine particle type pollutants 9 partly to take in and remove the pollutants 9.
    • 43. 发明专利
    • DEVICE FOR PRODUCING FINE GRAIN OF ICE
    • JPH0375463A
    • 1991-03-29
    • JP21322489
    • 1989-08-18
    • TAIYO SANSO CO LTDMITSUBISHI ELECTRIC CORP
    • TADA MASUTAFUKUMOTO HAYAAKIHATTORI NOBUMI
    • B08B7/00F25C1/00H01L21/304
    • PURPOSE:To make it possible to produce monodispersed fine frozen grains of desired diameters from a liquid by providing a means for forming fine liquid droplets including means for controlling the flow rate of a liquid to be frozen which is sent from a supply source of the liquid into a cooling vessel. CONSTITUTION:A means 10 for forming fine liquid droplets is formed in an outer framework 12 in which an inner framework 13 is fitted. The inner framework 13 has in it a projecting part 14, with which is connected a means 15 for controlling the flow rate of a liquid to be frozen sent from a liquid supply source 6 for the freezing into a thermally insulated vessel 4. This flow rate controlling means 15 is equipped with a pair of opening-closing plates 19, 19 whose shape is selected in such a manner as to make them close a passage (a small orifice 18) and whose movement consisting of expansion and contraction opens and closes the small orifice 18 formed in an orifice plate 12. Liquid to be frozen is injected under pressure from the liquid supply source 6 for the freezing; the liquid to be frozen is divided by the opening and closing of the small orifice 18 in the orifice plate 17. This constitution controls the formation of fine liquid droplets for the freezing at desired diameters and makes it possible to obtain monodisparsed fine frozen grains of desired diameters.
    • 44. 发明专利
    • SEMICONDUCTOR MANUFACTURING EQUIPMENT AND SEMICONDUCTOR MANUFACTURING METHOD
    • JPH0355842A
    • 1991-03-11
    • JP19058989
    • 1989-07-25
    • MITSUBISHI ELECTRIC CORP
    • OMORI TOSHIAKIFUKUMOTO HAYAAKI
    • H01L21/316
    • PURPOSE:To obtain a device wherein low temperature treatment is enabled and an oxide silicon thin film having uniform thickness and superior controlability can be formed, by using high purity hydrogen peroxide and high purity water which are produced by using high purity hydrogen gas and oxygen gas raw material, and applying silent discharge. CONSTITUTION:The title equipment is provided with the following; a reaction tube 1 in which a silicon wafer 2 is accommodated, a heating means 3 heating the silicon wafer 2 in the reaction tube 1 at a specified temperature, and a means 10 producing high purity hydrogen peroxide and high purity water for forming a silicon oxide thin film on the silicon wafer 2 by using high purity hydrogen gas and high purity oxygen gas as raw material and applying silent discharge. For example, each flow rate of high purity H2, high purity O2 as the raw material and inert gas as carrier gas is adjusted by mass flow controllers 11-13, and the above gas is supplied to a discharging apparatus 10, as mixed gas of arbitrary concentration. Silent discharge is generated by applying a high voltage to an electrode 10b in the discharging apparatus 10, from a high frequency power supply 14, thus producing high purity H2O2 and high purity H2O.
    • 46. 发明专利
    • CLEANING MECHANISM OF ASHER DEVICE
    • JPH033313A
    • 1991-01-09
    • JP13793189
    • 1989-05-31
    • MITSUBISHI ELECTRIC CORP
    • TSUKAGUCHI SANENORIOSAKI SABUROFUKUMOTO HAYAAKI
    • H01L21/02
    • PURPOSE:To obtain the title cleaning mechanism capable of cutting down the cleaning time inside a chamber as well as the wafer processing capacity by a method wherein the said mechanism is respectively and specifically provided with a chamber, a pipe-line system, a pump and a control system. CONSTITUTION:The title cleaning mechanism is provided with a chamber 1 with admission port 2 and an exhaust port 3 for internally processing wafers, a pipe-line system 4 connected to the chamber 11 and having a feed valve 5 and an exhaust valve 6 respectively opening and closing the admission port 2 and the exhaust port 3, a pump 7 connected to the pipe-line system 4 and vacuumizing the chamber 1 as well as a control system 9 connected to the pump 7 and the pipe-line system 4 and controlling the opening and closing of respective valves 5, 6 as well as the operation stoppage of the pump 7. In such a constitution, the opening and closing of the feed valve 5 and the exhaust valve 6 as well as the operation.stoppage of the pump 7 can be automated by the control system 9. Accordingly, the cleaning time inside the chamber 1 can be cut down without fail thereby enabling the wafer processing capacity to be augmented.
    • 47. 发明专利
    • DUST COLLECTOR IN WAFER CARRYING DEVICE
    • JPH02310210A
    • 1990-12-26
    • JP12931489
    • 1989-05-23
    • MITSUBISHI ELECTRIC CORP
    • HATTORI NOBUMIFUKUMOTO HAYAAKI
    • B65G49/00B03C3/00
    • PURPOSE:To improve the extent of dust collecting efficiency by installing a floating dust charging device and a duct collecting electrode plate in a closed type carrier, and positioning this plate to a position being opposed to a wafer surface, in a dust collector in a semiconductor manufacturing process. CONSTITUTION:A lot of dust charging devices 11 by means of corona discharge or the like are installed in an upper part in an enclosed tunnel for wafer conveyance. Then, each dust collecting electrode plate 12 is installed at both sides of a wafer carrying rail 4 so as to form an electric field in a direction vertical with a main surface of a wafer 2 as well as so as to be opposed to a wafer surface of this wafer 2. With this constitution, dust floating in the enclosed tunnel 1 is charged by the charging device 11, so that the dust is moved to the electrode plate 12 at a speed depending upon a balance of electric force to be received from an electric field between the wafer 2 and the plate 12 and inertial force of the dust itself, thus it is collected. With this constitution, dust collecting accuracy and efficiency are improved.
    • 49. 发明专利
    • APPARATUS FOR COUNTING FINE PARTICLES ADHERING TO SURFACE OF SOLID
    • JPH01308942A
    • 1989-12-13
    • JP13954088
    • 1988-06-08
    • MITSUBISHI ELECTRIC CORP
    • YANAGI MOTONORIHAMA MASAHARUHATTORI NOBUMIFUKUMOTO HAYAAKI
    • G01D5/48G01N15/02G01N15/06G01N15/10
    • PURPOSE:To enhance the measuring accuracy of adhering fine praticles to a large extent by providing a drive means, a sound wave oscillation means and a measuring means. CONSTITUTION:An inner tank 4 is relatively rotated with respect to an outer tank 1 by a drive means 5 to oscillate a sound wave having two or more different frequen cies from the sound wave oscillation means 6 provided to the outer tank 1 and the entire surface of a sample 2 to be measured is uniformly irradiated with said sound wave. By this method, all of the fine particles adhere to said surface can be washed off to be dispersed in the measuring liquid in the inner tank 4. Therefore, since the particle size distribution of the particles adhering to the surface of the sample 2 to be measured can be reproduced in the measuring liquid 3, the measuring accuracy of the adhering fine particles can be enhanced to a large extent. Further, the release of the fine particles from the surface of a solid and the washing-out thereof can be performed in the hermetically closed inner tank 4 and the measuring liquid 3 containing the released fine particles is transferred to a measuring means without being exposed to the circumferential atmosphere to make it possible to measure the number of fine particles. Therefore, the reliability of measurement can be enhanced without receiving the contamination from the outside.