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41. 发明专利

JPH08307290A IF SIGNAL AMPLIFIER CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND DIGITAL MOBILE RADIO EQUIPMENT USING IT 失效
公开(公告)号：JPH08307290A
公开(公告)日：1996-11-22
申请号：JP10772795
申请日：1995-05-02
申请人： HITACHI LTD
发明人： KITA MASAHITO , OKAZAKI TAKAO
IPC分类号： H03K19/0948 , H04B1/10 , H04B1/26 , H04L27/18
摘要： PURPOSE: To provide the IF signal amplifier circuit, the semiconductor integrated circuit device, and the digital mobile radio equipment in which malfunction of an inverter is prevented by preventing noise superimposed on a power supply and GND from an inverter circuit of a digital signal waveform shape block from being intruded to a power supply and GND of an analog small signal amplifier block. CONSTITUTION: The amplifier circuit is a small signal amplifier circuit comprising multi-stage inverters and made up of an analog small signal amplifier section 3 consisting of two stages inverter circuits 1, 2 and a digital signal waveform shaping section 6 consisting of 2-stage inverter circuits 4, 5. In the layout of the IF signal amplifier circuit to an LSI, the power supply line of the analog small signal amplifier section 3 and the digital signal waveform shape section 6 is laid out by separating wires 11, 12 directly from a power supply pad 10 and GND wires 14, 15 are directly separated and laid out from a GND pad 13.

42. 发明专利

JPH08274266A FUSE TRIMMING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT EQUIPPED THEREWITH 失效
公开(公告)号：JPH08274266A
公开(公告)日：1996-10-18
申请号：JP9632095
申请日：1995-03-29
申请人： HITACHI LTD
发明人： OKAZAKI TAKAO
IPC分类号： H01L27/04 , G11C17/14 , H01L21/822
摘要： PURPOSE: To accurately measure the resistance of a fuse by a method wherein one end of the fuse is put in a cut state by second control signals, a prescribed voltage is applied between external terminals connected to the ends of the fuse, and only a current from the external terminals is made to flow through the fuse. CONSTITUTION: A trimming circuit 100 is equipped with pad terminals PAD1 and PAD2 which feed a potential to a fuse 113 for fusing, a P-channel type MOSFET 101 which connects the fuse 113 to a power supply potential Vss and controls them, and an N-channel type MOSFET 104 which connects the fuse 113 to a power supply potential Vdd and controls them. One end of the fuse 113 is put in a cut state, and when the prescribed voltages Vdd and Vss are applied to the outer terminals PAD1 and PAD2 connected to the ends of the fuse 113, only a current from the outer terminal PAD1 is made to flow through the fuse 113. Therefore, the resistance of the fuse 113 can be precisely measured.

43. 发明专利

JPH07321573A INVERTER TYPE AMPLIFIER AND PORTABLE COMMUNICATION TERMINAL EQUIPMENT PROVIDED WITH THE SAME 失效
公开(公告)号：JPH07321573A
公开(公告)日：1995-12-08
申请号：JP13132994
申请日：1994-05-20
申请人： HITACHI LTD
发明人： NISHIKAWA NORIMITSU , ISHIHARA HAYATO , OKAZAKI TAKAO
IPC分类号： H03F3/72
摘要： PURPOSE:To provide an inverter type amplifier with low power consumption provided with the frequency characteristics of a high band and capable of high speed power-on and power-down. CONSTITUTION:By the operations of the switch for the power-down of an amplifier main body 110, the switch for the power-down of a bias circuit 120 for generating the bias voltage of the operating point 130 separately from the amplifier main body 110 and the charging element 201 and discharging element 202 of a switching circuit 200 controlled by the control signals of a switch control circuit 300 whose input is the output level 134 of the amplifier main body 110, the voltage level of the operating point 130 of the amplifier main body 110 is adjusted at a high speed.

44. 发明专利

JPH07249961A LOW PASS FILTER, COMMUNICATION LSI AND COMMUNICATION TERMINAL EQUIPMENT 失效
公开(公告)号：JPH07249961A
公开(公告)日：1995-09-26
申请号：JP6555494
申请日：1994-03-08
申请人： HITACHI LTD
发明人： KITA MASAHITO , OKAZAKI TAKAO
IPC分类号： H03H11/12 , H04L27/22
摘要： PURPOSE:To obtain a low pass filter capable of reducing current consumption. CONSTITUTION:The low pass filter is provided with an output-only active element 13 of which frequency band is limited as low as possible within a passable range of a signal to be processed to reduce current consumption. A feedback- only active element 12 having a wider frequency band as compared with that of the element 13 and low gain is set into a feedback route FB to obtain a required filter characteristic.

45. 发明专利

JPH07170166A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07170166A
公开(公告)日：1995-07-04
申请号：JP34193093
申请日：1993-12-13
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： OKAZAKI TAKAO , ISHIHARA HAYATO , TANBA HIROKO , WATANABE HIROBUMI , SONOBE HIROAKI
IPC分类号： H01L27/06 , H03K19/003
摘要： PURPOSE:To prevent through-current by selectively turning off a pull-down mOSFET or a pull-up MOSFET being the component of an input circuit in the low power consumption mode and forming an input logic circuit with a clocked inverter or the like. CONSTITUTION:When a communication LSI device is set to the low power consumption mode and an internal control signal PD is set to a high level, a MOSFETN3 is nonconductive and is not acted as a pull-down MOSFET. In this case, a clocked inverter CV1 is set to a nonconductive state. Furthermore, The FETN 3 is conductive through the reception of an inverted internal control signal PDB at a low level and acts as a pull-up MOSFET. Thus, the input signal level of the inverter V3 is fixed independently of the level of the input signal. Thus, while the level of the internal input signal ISin is fixed to a low level, the input current path via the N3 is interrupted to interrupt a through-current path by the inverter CV1.

46. 发明专利

JPH07122646A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH07122646A
公开(公告)日：1995-05-12
申请号：JP26335993
申请日：1993-10-21
申请人： HITACHI LTD
发明人： OKAZAKI TAKAO
IPC分类号： H01L27/04 , H01L21/82 , H01L21/822
摘要： PURPOSE:To enhance the reliability by blowing out fuses in a semiconductor integrated circuit device positively even if they are reduced in size. CONSTITUTION:A fuse layer 4, where a pair of rectangular contact parts 1 are linked through tapered parts 3 and a linear part 2, is formed on the main plane of a semiconductor substrate 8. An insulation layer 5 is then formed on the fuse layer 4 and a power supply wiring 6 connected with the fuse layer 4 through a contact hole is formed on the insulation layer 5. In such semiconductor integrated circuit device, the tapered part 3 is set narrower on the side connected with the contact part 1 as compared with than the side in the direction including the side of the contact part 1.

47. 发明专利

JPS63226116A PLL CIRCUIT 失效
公开(公告)号：JPS63226116A
公开(公告)日：1988-09-20
申请号：JP5882187
申请日：1987-03-16
申请人： HITACHI LTD
发明人： OKAZAKI TAKAO
IPC分类号： H03L7/10
摘要： PURPOSE:To expand the frequency variable range of a PLL circuit substantially by adopting the plural number of stages of a clock frequency divider circuit for the frequency division ratio and identifying it that a phase control voltage reaches a prescribed upper limit voltage or a lower limit voltage to change over the frequency division ratio. CONSTITUTION:A frequency division ratio control circuit FDC identifying it that a phase control voltage VC formed by a loop filter LF reaches a prescribed upper limit voltage VB or a lower limit voltage VL to form a frequency division ratio control signal and clock frequency division circuits CFD1, CFD2 whose frequency division ratio is switched into 3 stages according to the frequency division ratio control signal, are provided. The frequency division ratio of the clock frequency division circuits CFD1, CFD2 at the time of starting the PLL circuit at its middle frequency division ratio, and when the phase control voltage VC reaches the upper limit voltage VH or the lower limit voltage VL due to the increased dispersion in the frequency characteristic of the voltage controlled oscillation circuit VCO, the frequency division ratio is switched at the same time. Thus, the overall frequency variable range of the PLL circuit is expanded and the product yield is improved.

48. 发明专利

JPS63202130A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS63202130A
公开(公告)日：1988-08-22
申请号：JP3320487
申请日：1987-02-18
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： OKAZAKI TAKAO , KODERA KOICHI
IPC分类号： H03M1/06 , H03M1/74
摘要： PURPOSE:To obtain a circuit with less power supply voltage dependancy and temperature dependancy by transferring a voltage supplied to a base of transistor pair being a component of a reference voltage generating circuit connected in common and a potential corresponding to an output reference voltage of the voltage generating circuit to an output operational amplifier circuit via a corresponding operational amplifier circuit and a resistor. CONSTITUTION:The base of transistor pairs T1, T2 connected in common is connected to a noninverting input terminal of an operational amplifier circuit OA3 (3rd operational amplifier). The inverting input terminal of the operational amplifier circuit OA3 is connected to its output terminal. Thus, the operational amplifier circuit OA3 acts like a voltage transfer circuit having a very high input impedance. On the other hand, the drain of the MOSFETO2 is connected to the noninverting input terminal of the operational amplifier circuit OA2 (2nd operational amplifier circuit). The inverting input terminal of the operational amplifier circuit OA2 is connected to its output terminal. Thus, the operational amplifier circuit OA2 acts like a voltage transfer circuit having a very high input impedance. Thus, the power voltage dependancy is avoided.

49. 发明专利

JPS6376522A PLL CIRCUIT 失效
公开(公告)号：JPS6376522A
公开(公告)日：1988-04-06
申请号：JP21958786
申请日：1986-09-19
申请人： HITACHI LTD
发明人： OKAZAKI TAKAO
IPC分类号： H03L7/10
摘要： PURPOSE:To improve utilization efficiency and S/N ratio of a communication network, by setting the current value of the charging current source and discharging current source of a loop filter in such a way that they can become prescribed reference current values in a state where the phase of a PLL circuit is locked and, moreover, causing the current value of the charging current source to change in inverse proportion to a control voltage with the reference current value being a reference. CONSTITUTION:A control voltage Vc is set in such a way that the voltage Vc can become a prescribed reference voltage Vo in a state where the phase of a PLL circuit is locked and the current values of the charging current Iu of a charging current source IS1 and discharging current Id of a discharging current source IS2 are set in such a way that they can become a prescribed current value Io in the same state. Furthermore, the current value of the charging current Iu of the current source IS1 is caused to change in inverse proportion to the fluctuation of the control voltage Vc and the current value of the discharging current Id of the current source IS2 is caused to change proportionally to the fluctuation of the control voltage Vc. Since the charging current Iu of the charging current source IS1 becomes the maximum in the initial state, therefore, the leading-in time of the PLL circuit is sharply shortened. As a result, the S/N of the circuit is improved.

50. 发明专利

JP2015012413A バイアス回路有权
标题翻译：偏置电路
公开(公告)号：JP2015012413A
公开(公告)日：2015-01-19
申请号：JP2013135767
申请日：2013-06-28
申请人：株式会社日立製作所 , Hitachi Ltd
发明人： SOMADA ICHIRO , OKAZAKI TAKAO , MOCHIZUKI KENTA
IPC分类号： H03F3/343 , G05F3/30 , H03F1/30
CPC分类号： H03F3/19 , H03F3/45085 , H03F3/45484 , H03F2200/447
摘要：【課題】準ミリ波帯域以上の高周波増幅器のもつ利得の温度依存性を補償する電流源を実現する。【解決手段】温度係数が所定値以下である電流が第1の電流源より供給され電圧を発生する第1のPN接合素子と、高電圧側は前記第1のPN接合素子の低電圧側と第2のトランジスタのベース端子に繋がる前記第1の電流源と、所定値以上の温度係数をもつ電流が第2の電流源より供給され電圧を発生する第2のPN接合素子と、高電圧側は前記第2のPN接合素子の低電圧側と、第1のトランジスタのベース端子とに繋がる前記第2の電流源と、前記第2の電流源と等しい温度係数を持つ第3の電流源から電流供給を受け、前記第2のトランジスタと、前記第1のトランジスタで構成される差動対において、前記第2のトランジスタのコレクタ端子において前記第2の電流源と比較して電流の温度係数が2逓倍された温度係数を持つ電流を得るように構成されたバイアス回路。【選択図】図5
摘要翻译：要解决的问题：实现补偿高频放大器对于准毫米或更高频带的增益的温度依赖性的电流源。解决方案：在包括提供有电流的第一PN结元件的差分对中，通过第一电流源的温度系数等于或低于预定值以产生电压，所述第一电流源具有连接到第一PN结元件的低压侧的高电压侧和第二晶体管的基极端子，第二PN结元件，其由第二电流源提供具有等于或高于预定值的温度系数的电流以产生电压，所述第二电流源具有连接到第二PN的低电压侧的高压侧第一晶体管的基极端子和第一晶体管的基极端子，第二晶体管提供来自具有相同温度的第三电流源的电流系数作为第二电流源，并且第一晶体管，偏置电路被配置为在第二晶体管的集电极端处产生具有由第二电流源的电流的两倍的温度系数的电流。

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