会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 39. 发明专利
    • PHOTORESIST COMPOSITION
    • JPH02103049A
    • 1990-04-16
    • JP25485688
    • 1988-10-12
    • TOSOH CORP
    • KOSHIYOU MASAAKIYAMAMOTO TAKASHINAGAOKA TSUNEKOKIYOTA TORU
    • G03F7/012G03F7/023G03F7/20
    • PURPOSE:To obtain a photoresist compsn. having high sensitivity and superior transparency in far ultraviolet region and excimer laser region of wavelength by using a combined compsn. of a copolymer of styrene with maleic acid deriv. and a photosensitive material. CONSTITUTION:A photoresist compsn. is constituted of a compsn. consisting of a polymer prepd. by esterifying 5-80% of a carboxylic acid expressed by the general formula I with 1-5C alkyl group and a photosensitive material. In the formula I, R is 1-10C alkyl group or a cycloalkyl group; X is 50-30. The polymer I is prepd. by treating a 1:1 crosslinked polymer obtd. by the radical polymn. of styrene and maleic anhydride, with an alcohol. The polymer has superior transparency in a wavelength region of far ultraviolet rays and excimer laser, having also superior coatability and developability. Moreover, the polymer has appropriate solubility because of its degree of esterification between 5-80%, so the polymer is developable in usual alkali developing soln. Accordingly, a fine resist pattern having high precision is formed easily.