专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

32. 发明专利

JP2003055089A Silicon single crystal produced by float zone method and silicon substrate 有权
标题翻译：通过FLOAT ZONE方法和硅基材生产的硅单晶
公开(公告)号：JP2003055089A
公开(公告)日：2003-02-26
申请号：JP2002221342
申请日：2002-07-30
申请人： Wacker Siltronic Ag , ワッカージルトロニックアクチエンゲゼルシャフト
发明人： ALTMANNSHOFER LUDWIG , GRUNDNER MANFRED , VIRBULIS JANIS
IPC分类号： C30B29/06 , C30B13/00 , C30B13/26
CPC分类号： C30B29/06 , C30B13/26 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To provide a silicon single crystal having a diameter which is considerably greater than 150 mm over a defined length and is free of dislocations in the region of this length. SOLUTION: The silicon single crystal obtained by a float zone method has a diameter of at least 200 mm over a length of at least 200 mm and free from dislocations in the region of this length.
摘要翻译：要解决的问题：提供在一定长度上具有大于150mm的直径的硅单晶，并且在该长度的区域中不会发生位错。解决方案：通过浮法法获得的硅单晶在至少200mm的长度上具有至少200mm的直径，并且在该长度的区域中没有位错。

34. 发明专利

JP2002249399A METHOD FOR MANUFACTURING SINGLE CRYSTAL AND SINGLE CRYSTAL 失效
公开(公告)号：JP2002249399A
公开(公告)日：2002-09-06
申请号：JP2001045120
申请日：2001-02-21
申请人： MURATA MANUFACTURING CO
发明人： SEKIJIMA YUUTOKU , SHIMOKATA MIKIO
IPC分类号： C30B29/28 , C30B13/00 , C30B13/24
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a single crystal by which a single crystal having a specified orientation can be easily, stably manufactured. SOLUTION: The manufacturing method for a single crystal is a manufacturing method, e.g. for an oxide single crystal, using no seed crystal. This method includes: a process where a polycrystalline raw material rod S is prepared, a process where the raw material rod is successively heated and melted in a longitudinal direction to form a melting zone B, and then the melting zone is cooled and solidified, and a process where a single crystal is grown in an orientation perpendicular to the most closed packing surface in the form of fibers having the diameter of

35. 发明专利

JP2002028921A METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD 失效
公开(公告)号：JP2002028921A
公开(公告)日：2002-01-29
申请号：JP2001121634
申请日：2001-04-19
申请人： WACKER CHEMIE GMBH
发明人： KRAUS HEINZ , SCHANTZ MATTHAUS , NIEDERMEIER PETER
IPC分类号： B26F3/00 , B28D5/02 , B28D5/04 , C01B33/02 , C30B13/00 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline silicon rod, by accumulating silicon on a carrier rod and cutting the molded object formed at this time. SOLUTION: The polycrystalline silicon rod is rotated centering around the axial line in the longitudinal direction thereof so as to generate at least one rod end part having no crack and peel to be cut by a cutting tool.

36. 发明专利

JP2001354476A HIGH-MELTING POINT CONDUCTIVE OXIDE, ITS MANUFACTURING METHOD AND USE THEREOF 失效
公开(公告)号：JP2001354476A
公开(公告)日：2001-12-25
申请号：JP2000170889
申请日：2000-06-07
申请人： NAT INST OF ADV IND & TECHNOL , IKEDA SHINICHI , SHIRAKAWA NAOKI , BANDO HIROSHI
发明人： IKEDA SHINICHI , SHIRAKAWA NAOKI , BANDO HIROSHI
IPC分类号： C04B35/00 , B22F3/10 , B22F3/24 , C22C1/05 , C22C29/12 , C30B13/00 , C30B29/22 , H01K1/10 , C04B35/495
摘要： PROBLEM TO BE SOLVED: To provide an oxide containing Sr and Ru, its manufacturing method and use thereof as a heat generating material, an electrode material, a light emitting material and a thermocouple material usable at 1,700 deg.C or higher temperature. SOLUTION: Powdered Sr compound is blended with powdered Ru compound or metallic Ru, which is then sintered in an oxygen-containing atmosphere at 900-1,300 deg.C. The obtained sintered compact is again crushed, which is then compacted and sintered again in the oxygen-containing atmosphere at 1,000-1,500 deg.C to obtain the objective Sr-Ru oxide sintered compact. It is used as the heat generating material, the electrode material, the light emitting material and the thermocouple material.

38. 发明专利

JPH11186121A SILICON WAFER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11186121A
公开(公告)日：1999-07-09
申请号：JP36743497
申请日：1997-12-24
申请人： SUMITOMO SITIX CORP
发明人： ITO MASATO
IPC分类号： C30B29/06 , C30B13/00 , C30B15/00 , C30B15/36 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To make uniform a resuscitate distribution in the surface of an N-type wafer which is used for zener diodes and whose crystal axis is oriented in the direction. SOLUTION: For growing an N-type silicon single crystal 3 into which a group V element such as phosphorus is doped using a CZ method or an FZ method, the center axis of the crystal 3 is tilted by 1 to 6 deg. with respect to the crystal axis. For dicing the wafer out of the grown crystal 3, the crystal 3 is diced obliquely at an angle corresponding to the tilt angle, so that a oriented N-type wafer can be obtained.

40. 发明专利

JPH10251095A PRODUCTION OF PHENIUM DIBORIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH10251095A
公开(公告)日：1998-09-22
申请号：JP8191397
申请日：1997-03-14
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , AIZAWA TAKASHI , ISHIZAWA YOSHIO
IPC分类号： C30B13/00 , C30B29/10
摘要： PROBLEM TO BE SOLVED: To obtain a large high quality single crystal by growing a single crystal at a specified growing rate in such a manner that the melting zone compsn. of rhenium diboride has a specified B/Re atomic ratio. SOLUTION: A rhenium diboride powder and a boron powder are mixed in a specified ratio, compacted by a rubber press and heated to sinter in an inert gas atmosphere at 1,600 to 2,000 deg.C to obtain a source sintered rod having >=60% relative density. Then the chamber of a single crystal growing device by floating zone method is prepared as a He gas atmosphere of 2 to 15atm, and the source sintered rod is set to the upper holder, while a seed crystal or sintered rod to form the initial melting zone is set to the lower holder. Then the source sintered rod is joined to the sintered rod to form the initial zone, and the joined part is heated by induction by a work coil to form a melting zone having 1.9 to 2.4 B/Re atomic ratio (66 to 70 atomic % of B). The upper and lower axes are moved downward while rotated at 0.3 to 3cm/hour growing rate to glow the crystal to obtain a large single crystal.

你已经成功收藏专利！

检索式保存成功!

IPRDB