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31. 发明专利

JP2008296336A Hollow sealing structure and manufacturing method for hollow sealing structure 审中-公开
标题翻译：中空密封结构的中空密封结构和制造方法
公开(公告)号：JP2008296336A
公开(公告)日：2008-12-11
申请号：JP2007145895
申请日：2007-05-31
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , INOUE MICHINOBU , MIYAGI TAKESHI
IPC分类号： B81C1/00 , B81B7/02 , H01H59/00
CPC分类号： B81C1/00333 , B81C2203/0136 , B81C2203/0145 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a hollow sealing structure and manufacturing method for a hollow sealing structure, which downsizes the hollow sealing structure and shortens a removing time of an internal sacrifice layer.
SOLUTION: The hollow sealing structure 1 comprises: substrates 2, 3; a functional element 4 arranged on primary faces of the substrates 2, 3; a first coating structure 7 with a plurality of openings 7a as a coating section for coating the functional element 4 in a hollow section 6, which form the hollow section 6 arranged on the primary faces of the substrates 2, 3; a second coating structure 8 arranged on a virtual straight line joining the openings 7a and functional element 4 on the first coating structure 7; and a sealing structure 9 for sealing a gap formed between the second coating structure 8 and first coating structure 7.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种中空密封结构的中空密封结构和制造方法，其缩小了中空密封结构并缩短了内部牺牲层的去除时间。解决方案：中空密封结构1包括：基底2,3; 布置在基板2,3的主面上的功能元件4; 第一涂层结构7具有多个开口7a作为涂覆部分，用于在中空部分6中涂覆功能元件4，其形成布置在基板2,3的主面上的中空部分6; 布置在连接第一涂层结构7上的开口7a和功能元件4的虚拟直线上的第二涂层结构8; 以及用于密封形成在第二涂覆结构8和第一涂层结构7之间的间隙的密封结构9.版权所有（C）2009，JPO＆INPIT

32. 发明专利

JP2008296335A Hollow sealing structure and manufacturing method of hollow sealing structure 有权
标题翻译：中空密封结构的中空密封结构与制造方法
公开(公告)号：JP2008296335A
公开(公告)日：2008-12-11
申请号：JP2007145830
申请日：2007-05-31
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , OGURO TATSUYA
IPC分类号： B81B3/00 , B81C1/00 , H01H59/00 , H01L23/02
CPC分类号： B81C1/00293 , B81C2203/0136 , H01L21/565 , H01L23/315 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a hollow sealing structure and a manufacturing method of the hollow sealing structure, which reduces a size of the hollow sealing structure and shortens time to remove sacrifice layers in it.
SOLUTION: The manufacturing method of the hollow sealing structure 1 includes processes of: burying a groove structure part 9 formed in a main surface of an insulating layer 3 as a substrate with the first sacrifice layer; forming a functional element 4 on the main surface of the insulating layer 3; forming a second sacrifice layer formed on the functional element to be connected with part of the first sacrifice layer; forming a first sealing body 7 as a coated part on surfaces of the first sacrifice layer and the second sacrifice layer; distributing a fluid for removing the sacrifice layers through an opening 7a provided for the first sealing body 7 contacting with the first sacrifice layer and for removing the first sacrifice layer and the second sacrifice layer; and blocking the opening 7a.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了提供中空密封结构的中空密封结构和制造方法，其减小了中空密封结构的尺寸并缩短了时间以去除其中的牺牲层。解决方案：中空密封结构1的制造方法包括以下步骤：将形成在绝缘层3的主表面中的沟槽结构部分9作为基底与第一牺牲层进行掩埋; 在绝缘层3的主表面上形成功能元件4; 形成在与所述第一牺牲层的一部分连接的所述功能元件上的第二牺牲层; 在第一牺牲层和第二牺牲层的表面上形成作为涂覆部分的第一密封体7; 通过设置用于与第一牺牲层接触的第一密封体7的开口7a分配用于去除牺牲层的流体，并且用于去除第一牺牲层和第二牺牲层; 并阻塞开口7a。版权所有（C）2009，JPO＆INPIT

33. 发明专利

JP2015043462A 半導体発光装置及びその製造方法审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2015043462A
公开(公告)日：2015-03-05
申请号：JP2014232413
申请日：2014-11-17
申请人：株式会社東芝 , Toshiba Corp
发明人： NISHIUCHI HIDEO , HIGUCHI KAZUTO , OBATA SUSUMU , NAKAYAMA TOSHIYA
IPC分类号： H01L33/62 , H01L33/38 , H01L33/44 , H01L33/48 , H01L33/50
CPC分类号： H01L24/97
摘要：【課題】電極の接続性を高く維持し、小型化に適した半導体発光装置及びその製造方法を提供する。【解決手段】実施形態によれば、発光部10dと第1導電部30aと絶縁層20と第2導電部30bと封止部50とを備えた半導体発光装置が提供される。発光部は、第1半導体層、発光層及び第2半導体層を含む半導体積層体10と、第2主面10aの側で第1、第2半導体層に接続された第1、第2電極14、15と、を含む。第1導電部は、第1電極に接続され、第2半導体層と離間しつつ第2半導体層の一部12pを覆う第1柱部31aを含む。絶縁層20は第2半導体層と第1柱部との間に設けられる。第2導電部は第2電極に接続され第2主面の上に立設される。封止部は第1、第2導電部の側面を覆う。【選択図】図1
摘要翻译：要解决的问题：提供一种高度保持电极的连接性并适合于缩小尺寸的半导体发光器件，并提供其制造方法。解决方案：提供一种半导体发光器件，包括：发光部分10d，第一导电部分30a，绝缘层20，第二导电部分30b和密封部分50.发光部分包括：半导体堆叠10，包括第一半导体层，发光层和第二半导体层; 以及在第二主表面10a侧连接到第一和第二半导体层的第一和第二电极14和15。第一导电部分包括连接到第一电极并且与第二半导体层间隔开的第二半导体层的一部分12p的第一柱部分31a。绝缘层20设置在第二半导体层和第一柱部之间。第二导电部分连接到第二电极并且垂直地布置在第二主表面上。密封部分覆盖第一和第二导电部分的侧表面。

34. 发明专利

JP2014160870A Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2014160870A
公开(公告)日：2014-09-04
申请号：JP2014100839
申请日：2014-05-14
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , OBATA SUSUMU
IPC分类号： H01L33/44 , H01L33/32 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that allows obtaining suitable color tone and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device comprises: a semiconductor layer having a first primary surface and a second primary surface on the opposite side of the first primary surface, including a light-emitting layer, and not including a substrate on the first primary surface side; an n-side electrode 16 and a p-side electrode provided in the semiconductor layer; an n-side wiring layer 41 connected to the n-side electrode 16 and having an end portion capable of external connection; a p-side wiring layer 42 connected to the p-side electrode 17 and having an end portion capable of external connection; resin 51 provided between the n-side wiring layer 41 and the p-side wiring layer 42, supporting the n-side wiring layer 41 and the p-side wiring layer 42, and holding the semiconductor layer with the n-side wiring layer 41 and the p-side wiring layer 42; a metal film 35 provided on an outer side of a side surface of the semiconductor layer continuing to the first primary surface; and a phosphor layer 61 provided on the first primary surface side without interposing the substrate.
摘要翻译：要解决的问题：提供一种允许获得合适的色调并提供其制造方法的半导体发光器件。解决方案：半导体发光器件包括：具有第一主表面和第二主表面的半导体层主表面在第一主表面的相对侧上，包括发光层，并且在第一主表面侧不包括基板; 设置在半导体层中的n侧电极16和p侧电极; 连接到n侧电极16并具有能够外部连接的端部的n侧布线层41; 连接到p侧电极17并具有能够外部连接的端部的p侧布线层42; 树脂51设置在n侧布线层41和p侧布线层42之间，支撑n侧布线层41和p侧布线层42，并且用n侧布线层41保持半导体层和p侧配线层42; 设置在与第一主面相连的半导体层的侧面的外侧的金属膜35; 以及设置在第一主表面侧而不插入基板的荧光体层61。

35. 发明专利

JP2013201273A Semiconductor light emitting element and manufacturing method of the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2013201273A
公开(公告)日：2013-10-03
申请号：JP2012068462
申请日：2012-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： KIMURA AKIYA , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , OBATA SUSUMU , NAKAYAMA TOSHIYA , ITO HISASHI
IPC分类号： H01L33/38 , H01L33/62
CPC分类号： H01L33/62 , H01L25/167 , H01L33/0075 , H01L33/486 , H01L33/52 , H01L33/647 , H01L2224/16245 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light emitting element, and to provide a manufacturing method of the semiconductor light emitting element.SOLUTION: According to one embodiment, a semiconductor light emitting element includes: a light emitting part; first and second conductive pillars; a sealing part; and first and second terminal parts. The light emitting part includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer includes a main surface having a first portion and a second portion. The light emitting layer is located on the first portion. The second semiconductor layer is located on the light emitting layer. The first conductive pillar is located on the second portion and establishes electrical continuity with the first semiconductor layer. The second conductive pillar is located on the second semiconductor layer and establishes electrical continuity with the second semiconductor layer. The sealing part covers the light emitting part and each side surface of the first and second conductive pillars. The first terminal part is located on the first conductive pillar. The second terminal part is located on the second conductive pillar. The first and second terminal parts respectively have portions that overlap with the sealing part without overlapping with the light emitting part when being projected on a flat surface arranged parallel with the main surface.
摘要翻译：要解决的问题：提供一种高度可靠的半导体发光元件，并提供半导体发光元件的制造方法。解决方案：根据一个实施例，半导体发光元件包括：发光部分; 第一和第二导电柱; 密封件; 以及第一和第二终端部件。发光部分包括第一和第二半导体层和发光层。第一半导体层包括具有第一部分和第二部分的主表面。发光层位于第一部分上。第二半导体层位于发光层上。第一导电柱位于第二部分上并与第一半导体层建立电连续性。第二导电柱位于第二半导体层上并与第二半导体层建立电连续性。密封部分覆盖第一和第二导电柱的发光部分和每个侧表面。第一端子部分位于第一导电柱上。第二端子部分位于第二导电支柱上。第一和第二端子部分分别具有与密封部分重叠的部分，而在与主表面平行布置的平坦表面上投影时，与发光部分不重叠。

36. 发明专利

JP2013069815A Semiconductor light-emitting device, light-emitting module and semiconductor light-emitting device manufacturing method 有权
标题翻译：半导体发光器件，发光模块和半导体发光器件制造方法
公开(公告)号：JP2013069815A
公开(公告)日：2013-04-18
申请号：JP2011206632
申请日：2011-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KIMURA AKIYA , HIGUCHI KAZUTO , NISHIUCHI HIDEO , OBATA SUSUMU , NAKAYAMA TOSHIYA , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , AKIMOTO YOSUKE
IPC分类号： H01L33/38
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device, a light-emitting module and a semiconductor light-emitting device manufacturing method, which can improve productivity and achieve downsizing.SOLUTION: A semiconductor light-emitting device comprises: a laminate 15 including a first semiconductor layer 12 of a first conductivity type, a second semiconductor layer 11 of a second conductivity type and a luminescent layer 13 provided between the first semiconductor layer and the second semiconductor layer, for emitting light emitted by the luminescent layer, from a first principal surface 15a on the second semiconductor layer side; a first electrode 16 connected to the first semiconductor layer on the side of a second principal surface 15b of the laminate on the opposite side to the first principal surface 15a; a second electrode 17 connected to the second semiconductor layer on the second principal surface side of the laminate; a first wiring part 21 connected to the first electrode; a second wiring part 22 connected to the second electrode; and an encapsulation part 25 provided on the second principal surface side of the laminate for covering the first wiring part and the second wiring part.
摘要翻译：要解决的问题：提供一种可以提高生产率并实现小型化的半导体发光器件，发光模块和半导体发光器件制造方法。解决方案：半导体发光器件包括：层压体15，其包括第一导电类型的第一半导体层12，第二导电类型的第二半导体层11和设置在第一半导体层和第二半导体层之间的发光层13 用于从第二半导体层侧的第一主表面15a发射由发光层发射的光的第二半导体层; 第一电极16，与层叠体的与第一主表面15a相反的一侧的第二主表面15b的一侧连接到第一半导体层; 连接到层叠体的第二主面侧的第二半导体层的第二电极17; 连接到第一电极的第一布线部21; 与第二电极连接的第二配线部22; 以及设置在层叠体的第二主面侧的用于覆盖第一布线部和第二布线部的封装部25。版权所有（C）2013，JPO＆INPIT

37. 发明专利

JP2013038212A Semiconductor light-emitting device and light-emitting module 有权
标题翻译：半导体发光器件和发光模块
公开(公告)号：JP2013038212A
公开(公告)日：2013-02-21
申请号：JP2011172875
申请日：2011-08-08
申请人： Toshiba Corp , 株式会社東芝
发明人： AKIMOTO YOSUKE , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , HIGUCHI KAZUTO , NISHIUCHI HIDEO , OBATA SUSUMU
IPC分类号： H01L33/48 , H01L33/38
CPC分类号： H01L27/153 , H01L25/0753 , H01L27/156 , H01L33/0079 , H01L33/505 , H01L33/54 , H01L33/62 , H01L51/50 , H01L2224/24 , H01L2924/12041 , H01L2924/12044 , H01L2933/005 , H01L2933/0066
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and a light-emitting module excellent in reliability.SOLUTION: A semiconductor light-emitting device according to an embodiment comprises: a plurality of chips separated from each other; a p-side external terminal; an n-side external terminal; and a layer having rigidity lower than that of a semiconductor layer. Each chip includes the semiconductor layer, a p-side electrode and an n-side electrode. The p-side external terminal is electrically connected with the p-side electrode of at least one chip on a second surface side. The n-side external terminal is electrically connected with the n-side electrode of at least one chip on the second surface side. The layer having rigidity lower than that of the semiconductor layer is provided at a crossing part of a line passing through a midpoint between the p-side external terminal and the n-side external terminal and also linking the p-side external terminal and the n-side external terminal, a center line perpendicular to the light-emitting layer, and an extended line of the semiconductor layer. The semiconductor layer is not provided on the center line, and the center line is positioned between the chips.
摘要翻译：要解决的问题：提供可靠性优异的半导体发光器件和发光模块。解决方案：根据实施例的半导体发光器件包括：彼此分离的多个芯片; p侧外部端子; n侧外部端子; 以及刚性低于半导体层的刚性层。每个芯片包括半导体层，p侧电极和n侧电极。 p侧外部端子与第二表面侧的至少一个芯片的p侧电极电连接。 n侧外部端子与第二面侧的至少一个芯片的n侧电极电连接。刚性低于半导体层的层设置在穿过p侧外部端子和n侧外部端子之间的中点的线的交叉部分处，并且还连接p侧外部端子和n侧外部端子边缘外部端子，垂直于发光层的中心线以及半导体层的延伸线。半导体层不设在中心线上，中心线位于芯片之间。版权所有（C）2013，JPO＆INPIT

38. 发明专利

JP2012195402A Manufacturing method for semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件的制造方法
公开(公告)号：JP2012195402A
公开(公告)日：2012-10-11
申请号：JP2011057625
申请日：2011-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , NAKA TOMOMICHI , KIMURA AKIYA , NAKAYAMA TOSHIYA , HIGUCHI KAZUTO
IPC分类号： H01L33/54 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor light-emitting device capable of strictly controlling the light emission color.SOLUTION: A manufacturing method for a semiconductor light-emitting device includes: a step of preparing a multilayer body including a first semiconductor layer with a first conductivity type formed on a substrate, a light-emitting layer, and a second semiconductor layer with a second conductivity type, and a structure body including a first electrode formed on a first main plane side of the multilayer body and electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer; a step of forming a resin layer covering the first electrode, the second electrode, and the multilayer body on the first main plane side of the multilayer body; a step of planarizing a surface of the resin layer; a step of removing the substrate; a step of forming a layer including a phosphor on a second main plane of the multilayer body from which the substrate has been removed; and a step of forming the layer including the phosphor so that the total thickness of the resin layer including the multilayer body and the layer including the phosphor becomes predetermined thickness based on the planarized surface of the first resin layer.
摘要翻译：解决的问题：提供能够严格控制发光颜色的半导体发光装置的制造方法。解决方案：半导体发光器件的制造方法包括：制备多层体的步骤，该多层体包括形成在基板上的第一导电类型的第一半导体层，发光层和第二半导体层具有第二导电类型，以及结构体，包括形成在所述多层体的第一主平面侧上并电连接到所述第一半导体层的第一电极和与所述第二半导体层电连接的第二电极; 在所述多层体的第一主面侧形成覆盖所述第一电极，所述第二电极和所述多层体的树脂层的工序; 使树脂层的表面平坦化的工序; 去除衬底的步骤; 在去除了基板的多层体的第二主平面上形成包括磷光体的层的步骤; 以及形成包括磷光体的层的步骤，使得包括多层体的树脂层和包含荧光体的层的总厚度基于第一树脂层的平坦化表面成为预定厚度。版权所有（C）2013，JPO＆INPIT

39. 发明专利

JP2011258675A Optical semiconductor device 有权
标题翻译：光学半导体器件
公开(公告)号：JP2011258675A
公开(公告)日：2011-12-22
申请号：JP2010130526
申请日：2010-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/52 , H01L33/50
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/0095 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0058
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of mass production at a low cost and capable of miniaturization to the same extent as a semiconductor light-emitting element, and to provide a method of manufacturing the same.SOLUTION: The optical semiconductor device comprises: a first principal surface; a second principal surface that is the opposite surface of the first principal surface; a light-emitting layer including a first electrode and a second electrode formed on the second principal surface; a translucent layer that is provided on the first principal surface and has translucency; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer that is provided on the second principal surface, seals the first metal post and the second metal post with the end of the first metal post and the end of the second metal post exposed, and covers the side surfaces of the light-emitting layer.
摘要翻译：解决的问题：提供能够以低成本大量生产并能够与半导体发光元件相同程度的小型化的光半导体器件，并提供其制造方法。解决方案：光学半导体器件包括：第一主表面; 第二主表面，其是第一主表面的相对表面; 包括形成在所述第二主表面上的第一电极和第二电极的发光层; 设置在第一主表面上并具有透光性的半透明层; 设置在所述第一电极上的第一金属柱; 设置在所述第二电极上的第二金属柱; 设置在所述第二主表面上的密封层，密封所述第一金属柱和所述第二金属柱，所述第一金属柱与所述第一金属柱的端部和所述第二金属柱的端部暴露，并且覆盖所述发光的侧表面层。版权所有（C）2012，JPO＆INPIT

40. 发明专利

JP2011258671A Semiconductor light-emitting device and method for producing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2011258671A
公开(公告)日：2011-12-22
申请号：JP2010130519
申请日：2010-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , HIGUCHI KAZUTO , OBATA SUSUMU , NAKAYAMA TOSHIYA
IPC分类号： H01L33/38 , H01L33/50 , H01L33/52
CPC分类号： H01L33/647 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L33/58 , H01L33/62 , H01L33/642 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of maintaining high connectivity to electrodes and suitable to miniaturization, and to provide a method for producing the same.SOLUTION: The semiconductor light-emitting device comprises: a light-emitting part 10d; a first conductive part 30a; an insulating layer 20; a second conductive part 30b; a sealing part 50; and a optical layer 60. The light-emitting part includes: a semiconductor laminate 10 including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; and first and second electrodes 14 and 15 that are connected to the first and second semiconductor layers on a second primary surface 10a side. The first conductive part is connected to the first electrode, and includes a first column part 31a covering a part 12p of the second semiconductor layer while apart from the second semiconductor layer. The insulating layer 20 is provided between the second semiconductor layer and the first column part. The second conductive part is connected to the second electrode and is vertically arranged on the second primary surface. The sealing part covers the side surfaces of the first and second conductive parts. The optical layer is provided on a first primary surface 10b of the semiconductor laminate and includes a wavelength conversion section.
摘要翻译：要解决的问题：提供能够保持与电极的高连接性并适合于小型化的半导体发光装置，并提供其制造方法。解决方案：半导体发光器件包括：发光部分10d; 第一导电部30a; 绝缘层20; 第二导电部30b; 密封部50; 光发射部分包括：包括第一半导体层，发光层和第二半导体层的半导体层叠体10; 以及在第二主表面10a侧连接到第一和第二半导体层的第一和第二电极14和15。第一导电部分连接到第一电极，并且包括覆盖第二半导体层的与第二半导体层隔开的部分12p的第一列部分31a。绝缘层20设置在第二半导体层与第一列部之间。第二导电部分连接到第二电极并且垂直地布置在第二主表面上。密封部分覆盖第一和第二导电部件的侧表面。光学层设置在半导体层叠体的第一主表面10b上，并且包括波长转换部。版权所有（C）2012，JPO＆INPIT

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