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31. 发明专利

JP2006052123A N-TYPE AlN CRYSTAL, N-TYPE AlGaN SOLID SOLUTION, AND METHOD FOR PRODUCING THEM 审中-公开
标题翻译： N型AlN晶体，N型AlGaN固溶体及其制造方法
公开(公告)号：JP2006052123A
公开(公告)日：2006-02-23
申请号：JP2005174864
申请日：2005-06-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： TAKEUCHI HISAO , MIYANAGA TOMOMASA , CHIKUNO TAKASHI
IPC分类号： C30B29/38 , C01B21/072 , C01G15/00 , H01L21/203 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To solve the problems that the productivity or the carrier concentration is not sufficient in the production of an n-type AlN crystal and an n-type AlGaN solid solution; and to obtain the n-type AlGaN solid solution having a low resistivity required for being used as a semiconductor element.
SOLUTION: The low resistivity n-type AlN crystal or AlGaN solid solution, having a shallow impurity level can be produced by simultaneously substituting a portion of Al atoms of the AlN crystal or Al or/and Ga atoms of the AlGaN solid solution with group IIa element atoms and two atoms of adjacent N atoms with O atoms. A CVD method, an MBE method or the like can be utilized as the production method of the AlN crystal or the AlGaN solid solution.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了解决在n型AlN晶体和n型AlGaN固溶体的生产中生产率或载流子浓度不足的问题; 并获得用作半导体元件所需的低电阻率的n型AlGaN固溶体。解决方案：具有浅杂质水平的低电阻率n型AlN晶体或AlGaN固溶体可以通过同时代替AlN晶体的Al原子的一部分或AlGaN固溶体的Al或/或Ga原子具有IIa族元素原子和相邻N原子的两个原子与O原子。可以使用CVD法，MBE法等作为AlN晶体或AlGaN固溶体的制造方法。版权所有（C）2006，JPO＆NCIPI

32. 发明专利

JP2004253419A Optical semiconductor package 审中-公开
标题翻译：光学半导体封装
公开(公告)号：JP2004253419A
公开(公告)日：2004-09-09
申请号：JP2003039186
申请日：2003-02-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： IGARASHI TAKASHI , CHIKUNO TAKASHI
IPC分类号： H01S5/022 , H01L31/02
CPC分类号： H01L2224/48091 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor package which is capable of using a general-purpose automatic mounting machine, reducing the deterioration of high-frequency signals in transmission characteristics at a wire-bonded part having a high impedance, and superior in high-frequency characteristics.
SOLUTION: First, a two-stage structured through-hole composed of two through-holes 12a and 12b different from each other in diameter is provided to a metal base 11, the through-hole 12b on the element mounting surface side is set smaller in diameter than the through-hole 12a on the opposite side, a center conductor 13 is supported by a solid dielectric material 14 filling the through-hole 12a, and gas such as air or the like is made to serve as a dielectric material in the through-hole 12b. Second, a metal wall to serve as an installation conductor is provided near a bonding wire connecting the optical semiconductor element to the center conductor or near the center conductor protruding from the solid dielectric material 14, or a ditched part is provided to the metal base 11.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够使用通用自动安装机的光半导体封装，减少了具有高阻抗的引线接合部分的传输特性中的高频信号的劣化，以及优越的高频特性。解决方案：首先，将由直径不同的两个通孔12a和12b构成的两级结构通孔设置在金属基座11上，元件安装面侧的通孔12b为设置成比相对侧的通孔12a的直径小，中心导体13被填充在通孔12a中的固体电介质材料14支撑，并且使诸如空气等的气体用作电介质材料在通孔12b中。第二，在将光学半导体元件连接到中心导体或从固体电介质材料14突出的中心导体附近的接合线附近设置用作安装导体的金属壁，或者将沟槽部分设置到金属基座11 （C）2004，JPO＆NCIPI

33. 发明专利

JP2004175600A Process for manufacturing aluminum nitride sintered compact having metallized layer 审中-公开
公开(公告)号：JP2004175600A
公开(公告)日：2004-06-24
申请号：JP2002341722
申请日：2002-11-26
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： C04B35/581 , C04B35/64
摘要： PROBLEM TO BE SOLVED: To provide a process for manufacturing an aluminum nitride sintered compact having a metallized layer, whereby the resistivity of the metallized layer is decreased and the bonding strength between the metallized layer and aluminum nitride is increased. SOLUTION: In the process, a through-hole is punched on a ceramic green sheet essentially comprising aluminum nitride and is filled with a paste containing a conductive refractory metal, a resin binder, and a solvent. The sheet and the paste put into the hole are simultaneously sintered to manufacture the aluminum nitride sintered compact having a metallized layer. The amount of the solvent in the paste is controlled to 0.5-5 pts.wt. based on 100 pts.wt. metal powder in the paste. The control of the amount of the solvent prevents the decrease in bonding strength between the metallized layer and the base material due to cracks occurring in a via or in the sintered compact. An inorganic powder can be added to the paste to further increase the bonding strength. COPYRIGHT: (C)2004,JPO

34. 发明专利

JP2004146413A Package for housing semiconductor element and semiconductor device 审中-公开
公开(公告)号：JP2004146413A
公开(公告)日：2004-05-20
申请号：JP2002306474
申请日：2002-10-22
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SAITO HIROHISA , CHIKUNO TAKASHI , KAWAI CHIHIRO , TANAKA KIYOSHI
IPC分类号： H01L23/14 , H01L23/057 , H01L23/06 , H01L23/28 , H01L23/373 , H01L23/38
CPC分类号： H01L23/38 , H01L23/057 , H01L23/3732 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H01L2924/1423 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor package which can normally and stably operate a semiconductor element for a long period by efficiently transmitting a heat generated at a semiconductor element operating time to a heat sink. SOLUTION: The package for housing the semiconductor includes a base 2 having a placing part for placing the semiconductor element 1 on an upper surface, a frame 3 provided to surround the placing part on the upper surface of the base 2 and having a mounting part 3a of an I/O terminal 5 at a side, and the I/O terminal 5 mounted at the mounting part 3a. In this package, the base 2, a part of the base 2, the base 2 and the frame 3 or the part of the base and the frame are formed of a metal diamond composite material obtained by impregnating a base in which diamond particles are connected via a metal carbide with a copper and/or a silver or a metal diamond sintered material made of the diamond particles and the copper. A surface of the metal diamond composite material is covered with a gold plating layer. COPYRIGHT: (C)2004,JPO

35. 发明专利

JP2004127765A Hermetic sealing member, coaxial connector, and semiconductor element housing package 审中-公开
公开(公告)号：JP2004127765A
公开(公告)日：2004-04-22
申请号：JP2002291355
申请日：2002-10-03
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KATO AKIRA , CHIKUNO TAKASHI
IPC分类号： H01L23/02 , H01R24/02
摘要： PROBLEM TO BE SOLVED: To provide a hermetic sealing member, a coaxial connector, and a semiconductor element housing package, which have a good insertion characteristic and can reduce reflection loss.
SOLUTION: The hermetic sealing member 30, which is applied to the semiconductor element housing package 10 having a housing part 20 capable of housing the semiconductor element 12 to be a signal transmission route between the semiconductor element 12 and an external cable 80 and to ensure the airtightness of the housing part 20, comprises a pipe-shaped outer conductor 32 and a conductor pin 34 passed through the outer conductor. In a region between the outer conductor 32 and the conductor pin 34, a space Sb is formed on a side connected to the external cable and an insulation material 36 is disposed on a side connected to the semiconductor element 12.
COPYRIGHT: (C)2004,JPO

36. 发明专利

JP2004054075A Method for manufacturing micro-bench 审中-公开
公开(公告)号：JP2004054075A
公开(公告)日：2004-02-19
申请号：JP2002213440
申请日：2002-07-23
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SAITO HIROHISA , HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： G02B6/24 , C04B41/91
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a micro-bench using a sintered aluminum nitride compact at a low cost with good accuracy.
SOLUTION: The manufacturing method undergoes a step of polishing the surface of the sintered aluminum nitride compact, a step of forming grooves of a V shape or U shape in sectional shape by laser beam machining or plasma electric discharge machining on at least portions on the polished surface, a step of imparting differences in level by grinding to at least portions of the surface formed with the grooves of the V shape or the U shape, a step of providing at least portions of the surface formed with the grooves of the V shape or the U shape with metallic layers, a step of cutting the sintered aluminum nitride compact, and more, may undergo a step of forming optical waveguides in at least portions of the surface formed with the grooves of the V shape or the U shape.
COPYRIGHT: (C)2004,JPO

37. 发明专利

JP2004042303A Method for manufacturing ceramic multi-layer laminate 审中-公开
标题翻译：制造陶瓷多层叠层的方法
公开(公告)号：JP2004042303A
公开(公告)日：2004-02-12
申请号：JP2002199758
申请日：2002-07-09
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： B32B37/06 , B32B31/26
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a ceramic multi-layer laminate which is free from the problems of defective adhesion, warpage, waving and the like, even when a new material such as aluminum nitride is used. SOLUTION: This method for manufacturing a ceramic multi-layer laminate is unique in firing a ceramic green sheet after lamination. That is, a surface layer containing a pulverized inorganic matter whose BET specific surface area is smaller than the specific surface area of a pulverized inorganic matter forming the ceramic green sheet and an adhesive resin, is formed on the surface of the ceramic green sheet and the ceramic green sheet is laminated and fired. In addition, the BET specific surface area of the pulverized inorganic matter which forms the surface layer is preferably not more than 3.0 m 2 /g. COPYRIGHT: (C)2004,JPO
摘要翻译：待解决的问题：即使使用诸如氮化铝的新材料，提供一种不存在粘合不良，翘曲，波动等问题的陶瓷多层层压体的制造方法。
解决方案：该陶瓷多层层压体的制造方法在层压后烧成陶瓷生片是独一无二的。也就是说，在陶瓷生片的表面上形成含有BET比表面积小于形成陶瓷生片的粉碎的无机物的比表面积的粉碎无机物的表面层和粘合树脂，陶瓷生片被层压并烧制。此外，形成表层的粉碎的无机物的BET比表面积优选为3.0μm以下。版权所有（C）2004，JPO

38. 发明专利

JP2004026522A Method for manufacturing aluminum nitride sintered compact by grinding or polishing surface 审中-公开
公开(公告)号：JP2004026522A
公开(公告)日：2004-01-29
申请号：JP2002181342
申请日：2002-06-21
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： C04B41/91
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a metallized layer which has the high adhesion strength between aluminum nitride and the metallized layer and is free of cracks in the metallized layer.
SOLUTION: The aluminum nitride sintered compact having the metallized layer is manufactured by applying a paste containing W powder as a conductor high melting metal to a ceramic green sheet essentially consisting of the aluminum nitride, then simultaneously sintering the entire part thereof. At this time, the surface layer of the aluminum nitride sintered compact is removed by more than one-fourth the thickness of the aluminum nitride sintered compact by grinding or polishing after simultaneous sintering. As a result, the occurrence of cracks in vias by the grinding or polishing can be prevented.
COPYRIGHT: (C)2004,JPO

39. 发明专利

JP2003342073A Aluminum nitride sintered compact having metallized layer and its manufacturing process 审中-公开
标题翻译：具有金属层的硝酸铝烧结及其制造工艺
公开(公告)号：JP2003342073A
公开(公告)日：2003-12-03
申请号：JP2002154382
申请日：2002-05-28
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： C04B35/581 , C04B35/64 , C04B41/88
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a metallized layer free from cracks, which shows a high bond strength between aluminum nitride and the metallized layer. SOLUTION: In the aluminum nitride sintered compact having the metallized layer at its surface and/or inside, the metallized layer comprises W which is a conductive, high-melting point metal and an adhesion-enhancing inorganic material comprising at least two selected from Al 2 O 3 , SiO 2 and MgO, wherein the inorganic material has a coefficient of thermal expansion of 3×10 -6 -6×10 -6 /K. Preferably, mullite (3Al 2 O 3 2SiO 2 ) or an inorganic powder obtained by pulverizing the oxide mixture vitrified at a temperature not lower than its melting point, is used as the inorganic material. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有不含裂纹的金属化层的氮化铝烧结体，其显示出氮化铝和金属化层之间的高粘合强度。解决方案：在其表面和/或内部具有金属化层的氮化铝烧结体中，金属化层包括W，其是导电的高熔点金属和粘附增强无机材料，其包含至少两个选定的来自Al 2 O 3，SBO 2，SiO 2和MgO，其中无机材料的热膨胀系数为3×10 6 -6×10 -6 / K。优选地，莫来石（3Al SB 2 O 3 / SiO 2 SiO 2 SBB）或通过粉碎在不低于其的温度下玻璃化的氧化物混合物而获得的无机粉末熔点，用作无机材料。版权所有（C）2004，JPO

40. 发明专利

JP2012253125A Semiconductor device and wiring board 审中-公开
标题翻译：半导体器件和接线板
公开(公告)号：JP2012253125A
公开(公告)日：2012-12-20
申请号：JP2011123277
申请日：2011-06-01
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SUGIMURA TAKAHIRO , CHIKUNO TAKASHI
IPC分类号： H01L23/12 , H01L23/36 , H05K1/09
CPC分类号： H01L23/3735 , H01L23/24 , H01L23/49866 , H01L24/73 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01047 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that allows achieving high reliability and to provide a wiring board on which a semiconductor element is mounted.SOLUTION: A semiconductor device 10 comprises: an insulating substrate 121; a wiring layer 122 formed on a first primary surface 121a of the insulating substrate 121; and a semiconductor element 14 mounted on the wiring layer 122. In the semiconductor device 10, the wiring layer 122 is composed of a first copper-containing material containing copper and a metal having a smaller thermal expansion coefficient than copper, and the thermal expansion coefficient of the first copper-containing material is smaller than that of copper. In addition, the semiconductor device comprises a heat radiation layer 123 formed on a second primary surface 121b on the opposite side of the first primary surface 121a of the insulating substrate 121, and a heat sink 16 bonded to the insulating substrate 121 via the heat radiation layer 123. The heat radiation layer 123 is composed of a second copper-containing material containing copper.
摘要翻译：要解决的问题：提供一种允许实现高可靠性并提供其上安装有半导体元件的布线板的半导体器件。解决方案：半导体器件10包括：绝缘基板121; 形成在绝缘基板121的第一主面121a上的布线层122; 以及安装在布线层122上的半导体元件14.在半导体器件10中，布线层122由铜和第一含铜材料构成，热熔膨胀系数比铜高，热膨胀系数的第一含铜材料比铜的材料小。此外，半导体器件包括形成在绝缘基板121的第一主表面121a的相对侧上的第二主表面121b上的散热层123和通过热辐射结合到绝缘基板121的散热器16 层123.散热层123由含有铜的第二含铜材料构成。版权所有（C）2013，JPO＆INPIT

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