专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JP2007204810A Powder treatment device 有权
标题翻译：粉末处理装置
公开(公告)号：JP2007204810A
公开(公告)日：2007-08-16
申请号：JP2006024584
申请日：2006-02-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： C23C14/56 , C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a powder treatment device capable of uniformly depositing ultra-fine particles on raw material particles.
SOLUTION: The powder treatment device 1 deposits the ultra-fine particles in the vacuum atmosphere while moving raw material particles by a moving mechanism, and makes the vapor reach the surface of the raw material while the raw particles are rolled moved by a vibration generator 29. The ultra-fine particles in the vapor are uniformly deposited thereon. Fine charged particles having a large charge to mass ratio are deflected by a deflector 52 and are made to reach the raw particles. By preventing any neutral particles or huge charged particles from reaching the raw material particles, a uniform thin film can be deposited by the ultra-fine particles.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够在原料颗粒上均匀地沉积超细颗粒的粉末处理装置。解决方案：粉末处理装置1在真空气氛中沉积超细颗粒，同时通过移动机构移动原料颗粒，并使蒸汽到达原料的表面，同时原料被滚动移动振动发生器29.蒸气中的超细颗粒均匀地沉积在其上。具有大的电荷质量比的微细带电粒子被偏转器52偏转并被制成达到原始颗粒。通过防止任何中性粒子或巨大的带电粒子到达原料颗粒，可以通过超细颗粒沉积均匀的薄膜。版权所有（C）2007，JPO＆INPIT

32. 发明专利

JP2004311071A Oxygen minus ion generator 有权
公开(公告)号：JP2004311071A
公开(公告)日：2004-11-04
申请号：JP2003099539
申请日：2003-04-02
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , OBA MASATOSHI , HARA YASUHIRO , AMANO SHIGERU , TERASAWA HISAHIRO , YUYAMA JUNPEI
IPC分类号： H01T23/00
摘要： PROBLEM TO BE SOLVED: To suppress the generation of flexural stress on an oxygen minus ion emission member by reducing the temperature difference between each central portion and peripheral portion on a surface side and a back face side of the member, when heating the member composed of a solid electrolyte. SOLUTION: An oxygen minus ion generator can heat the member so that the temperature difference between each central portion and peripheral portion on a surface side and a back face side of an oxygen minus ion emission part 1a is reduced by heating the back face side of the emission part 1a by a halogen lamp 12 and heating the surface side of the emission part 1a by a circle lamp 22. Thereby, the generation of the flexural stress on the emission part 1a can be suppressed. COPYRIGHT: (C)2005,JPO&NCIPI

33. 发明专利

JP2004296221A Oxygen negative ion generator 有权
公开(公告)号：JP2004296221A
公开(公告)日：2004-10-21
申请号：JP2003085911
申请日：2003-03-26
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , OBA MASATOSHI , HARA YASUHIRO , AMANO SHIGERU , TERASAWA HISAHIRO , YUYAMA JUNPEI
IPC分类号： H01T23/00
摘要： PROBLEM TO BE SOLVED: To emit oxygen negative ions well by preventing the temperature on the front side for emitting the oxygen negative ions from being set relatively low in heating an oxygen negative ion emission member formed of a solid electrolyte.
SOLUTION: Since the temperature on the front side (extraction electrode 7 side) for emitting the oxygen negative ions can be set higher than that on the back side (side opposite to the extraction electrode 7) of an oxygen negative ion emission part 1a by installing a halogen lamp 22 adjacently to the circumference on the side of a tip having the emission part 1a of an oxygen negative ion generation member 1 formed of the solid electrolyte to heat the emission part 1a from the front side, a lot of the oxygen negative ions can be stably emitted.
COPYRIGHT: (C)2005,JPO&NCIPI

34. 发明专利

JP2004197176A Vapor deposition source, and vapor deposition system 有权
公开(公告)号：JP2004197176A
公开(公告)日：2004-07-15
申请号：JP2002367956
申请日：2002-12-19
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HORIUCHI TAKASHI , CHIN KOKUKA , HARA YASUHIRO , AMANO SHIGERU , YAMAGUCHI KOICHI
IPC分类号： C23C14/24 , G11B5/85 , H01L21/285 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition source having a long service life for a film deposition system of diamond like carbon (DLC) and a semiconductor.
SOLUTION: A vapor deposition source 3 comprises a plurality of vapor deposition materials 31
1 to 31
4 , and a plurality of trigger electrodes 34
1 to 34
4 , voltage can individually be applied to the trigger electrodes 34
1 to 34
4 . Thus, at the time when the induction of arc discharge is stopped, the trigger electrodes 34
1 to 34
4 to which voltage is applied are exchanged, and voltage is applied to new trigger electrodes 34
1 to 34
4 , so that trigger discharge is generated between the new trigger electrodes 34
1 to 34
4 and the vapor deposition materials 31
1 to 31
4 , and arc discharge is induced. Thus, by the use of the vapor deposition source 3, film deposition can continuously be performed without stopping the arc discharge and without exchanging the vapor deposition source 3.
COPYRIGHT: (C)2004,JPO&NCIPI

35. 发明专利

JP2004156121A Process and apparatus for drawing oxygen negative ion 审中-公开
公开(公告)号：JP2004156121A
公开(公告)日：2004-06-03
申请号：JP2002324879
申请日：2002-11-08
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , OBA MASATOSHI , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： C25B13/04 , C25B1/00 , H01J27/02 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide a process and an apparatus for drawing an oxygen negative ion which reduce the oxygen negative ion (O
- ) generated from a side wall of an oxygen negative ion-generating substrate and increase an yield of a current value of the oxygen negative ion (O
- ) which is to be drawn toward a Wehnert electrode.
SOLUTION: The yield of the current value of the oxygen negative ion is increased from that of conventional ones by adjusting the electric potential of a reflector, established around the oxygen negative ion-generating substrate comprising a solid electrolyte containing an electrode formed from an electroconductive deposited film, to a value equal to or lower than that of the electrode by electrically insulating the reflector from the electrode.
COPYRIGHT: (C)2004,JPO

36. 发明专利

JP2004018899A Evaporation source and film-formation equipment 审中-公开
公开(公告)号：JP2004018899A
公开(公告)日：2004-01-22
申请号：JP2002172607
申请日：2002-06-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HORIUCHI TAKASHI , CHIN KOKUKA , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： C23C14/24 , C23C14/32 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To form a thin film with a high quality without decreasing film-formation speed.
SOLUTION: An evaporation source 3 has a magnetic line-forming means 7. Even when magnetic field generated by arc current gets weaker and reduces its force applied to positively charged fine particles, flight direction of the positively charged fine particles are corrected by magnetic lines formed by means 7 to make them reach a substrate 52. By using the evaporation source 3, film-formation speed does not decrease as in conventional film-formation equipment because rate of fine particles reaching the film-formation target 52 does not decrease, even when reducing the arc current.
COPYRIGHT: (C)2004,JPO

37. 发明专利

JP2008214688A Thermal cvd system and film deposition method 有权
标题翻译：热CVD系统和薄膜沉积方法
公开(公告)号：JP2008214688A
公开(公告)日：2008-09-18
申请号：JP2007053085
申请日：2007-03-02
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , OBA MASATOSHI , KITAHAMA OSAMU , HARA YASUHIRO
IPC分类号： C23C16/44 , C01B31/02 , C23C16/26 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a thermal CVD system in which a desired film thickness can be obtained with high accuracy, and the thermal load of a substrate can be reduced and which is optimum when used for production of carbon nanotubes. SOLUTION: The thermal CVD system 20 prevents the gaseous raw material introduced into a reaction chamber 22 from attaining a growth temperature before the gas arrives at the substrate and achieves the mitigation of the growth rate on the substrate by using a heating lamp 23, such as an IR lamp, as a heating source of the substrate W, and operating the substrate W in the reaction chamber 22 to locally heat the substrate. As a result, the formation of the thin film of the desired film thickness with high accuracy is made possible. Also, by using the heating lamp 23 as the heating source, the exposure of the substrate to a high temperature for a long period of time is prevented and the reduction of the thermal load acting on the substrate is made possible. Further, the substrate cooling mechanism for cooling the substrate in the reaction chamber is included, due to which the force cooling of the substrate after the film deposition is made possible and the additional reduction of the thermal load exerted on the substrate is made possible. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以高精度获得所需膜厚的热CVD系统，并且可以降低基板的热负荷，并且在用于制造碳纳米管时是最佳的。解决方案：热CVD系统20防止在气体到达衬底之前引入反应室22中的气态原料达到生长温度，并且通过使用加热灯23来实现衬底上生长速率的缓解，例如IR灯，作为基板W的加热源，并操作反应室22中的基板W，以局部加热基板。结果，可以高精度地形成所需膜厚的薄膜。此外，通过使用加热灯23作为加热源，可以防止基板长期暴露于高温，并且可以降低作用在基板上的热负荷。此外，包括用于冷却反应室中的基板的基板冷却机构，由此可以在膜沉积之后对基板进行强制冷却，并且可以进一步降低施加在基板上的热负荷。版权所有（C）2008，JPO＆INPIT

38. 发明专利

JP2008075122A Plasma cvd apparatus and plasma cvd method 有权
标题翻译：等离子体CVD装置和等离子体CVD方法
公开(公告)号：JP2008075122A
公开(公告)日：2008-04-03
申请号：JP2006255299
申请日：2006-09-21
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , SUZUKI YASUMASA , YAMAGUCHI KOICHI , KATSUMATA TAKASHI , NAKANO MINAO , MURAKAMI HIROHIKO
IPC分类号： C23C16/511 , C01B31/02 , H01J37/32
摘要： PROBLEM TO BE SOLVED: To vapor-deposit carbon nanotubes on the whole surface of a substrate to be treated by utilizing a plasma CVD apparatus and plasma CVD method.
SOLUTION: Carbon nanotubes are vapor-deposited on the whole surface of the substrate S to be treated by: using the plasma CVD apparatus 1 having a substrate stage 14, a plasma generating means, and a mesh-shaped shielding member 15 having the same shape and same area as the substrate stage or the same shape as the substrate stage and an area smaller than the substrate stage, which are provided in a vacuum chamber 11; and then bringing a raw material gas dissociated by plasma into contact with the substrate S to be treated on the substrate stage 14 while shielding plasma generated in the vacuum chamber 11 by the shielding member 15 provided between a plasma generation region and the substrate S to be treated.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：通过利用等离子体CVD装置和等离子体CVD法在待处理的基板的整个表面上气相沉积碳纳米管。解决方案：通过以下方式将碳纳米管气相沉积在待处理的基板S的整个表面上：使用具有基板台14的等离子体CVD装置1，等离子体产生装置和网状遮蔽构件15，其具有设置在真空室11中的与基板台相同的形状和相同的面积或与基板台相同的形状和小于基板台的面积; 然后将由等离子体解离的原料气体与衬底载台14上待处理的基板S接触，同时通过设置在等离子体产生区域和基板S之间的屏蔽构件15在真空室11中产生的等离子体进行屏蔽对待。版权所有（C）2008，JPO＆INPIT

39. 发明专利

JP2008075120A Film deposition apparatus 有权
标题翻译：胶片沉积装置
公开(公告)号：JP2008075120A
公开(公告)日：2008-04-03
申请号：JP2006254850
申请日：2006-09-20
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , MATSUURA MASAMICHI , SAITO ATSUSHI
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can inject an alloy into an object for film deposition.
SOLUTION: The film deposition apparatus 1 has first and second electron emitting sources 3a, 3b. In each of magnetic field forming means 20a, 20b of the first and second electron emitting sources 3a, 3b, an N-pole and an S-pole are located on the right side and left side, respectively. The electrons emitted from respective openings 39a, 39b of anode electrodes 32a, 32b are bent in the same flying direction. Since a substrate holder 7 is provided at a position reached by electrons which are emitted from respective openings 39a, 39b and whose flying directions are bent, an electron cloud is formed in the vicinity of the substrate holder 7, and positive fine charged-particles emitted from respective openings 39a, 39b are attracted to the electron cloud and reach the surface of a substrate 11.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够将合金注入到用于成膜的物体中的成膜装置。解决方案：成膜装置1具有第一和第二电子发射源3a，3b。在第一和第二电子发射源3a，3b的每个磁场形成装置20a，20b中，N极和S极分别位于右侧和左侧。从阳极32a，32b的各个开口39a，39b发射的电子沿相同的飞行方向弯曲。由于在从各个开口39a，39b发射并且其飞行方向弯曲的电子到达的电子位置处设置有基板保持件7，所以在基板保持件7附近形成电子云，并且正极细的带电粒子发射从相应的开口39a，39b吸引到电子云并到达基板11的表面。版权所有（C）2008，JPO＆INPIT

40. 发明专利

JP2008053116A Ion gun and deposition apparatus 审中-公开
标题翻译：离子枪和沉积装置
公开(公告)号：JP2008053116A
公开(公告)日：2008-03-06
申请号：JP2006229574
申请日：2006-08-25
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SATAKE TORU , SATAKOKU SHINJI , HARA YASUHIRO
IPC分类号： H01J37/08 , C23C14/48 , H01J27/08 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide an ion gun and a deposition apparatus obtaining wider range of use by making possible use in a higher pressure vacuum region.
SOLUTION: The ion gun 1 is provided with a negative electrode 2 with a slit opening 11 formed on it, a magnet 3 generating a magnetic field in the widthwise direction of the opening 11, and a positive electrode 5 installed separately from a back surface of the negative electrode 2 so that the electric field is generated in an approximately vertical direction to the magnetic field. Accordingly, ion beam is extracted from the opening 11 on the surface of the negative electrode 2. The magnet 3 is composed with SmCo alloy as main component, the opening 11 is composed of a vertical part with an approximately constant gap extending vertically from the back surface of the negative electrode 2 toward the interior, and an inclining part connected to the vertical part with a gap gradually widening toward the surface of the negative electrode 2. The gap in the vertical part is 0.7 mm or more and 2.5 mm or less.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过在较高压力真空区域中可能使用来获得更广泛使用范围的离子枪和沉积设备。解决方案：离子枪1设置有形成有狭缝开口11的负极2，在开口11的宽度方向上产生磁场的磁体3和与开口11的宽度方向分开设置的正极5 负极2的背面，使得在与磁场大致垂直的方向上产生电场。因此，离子束从负极2的表面上的开口11抽出。磁体3由SmCo合金作为主要成分构成，开口11由垂直部分构成，其垂直方向从背面垂直延伸负极2的表面朝向内部，并且倾斜部分与垂直部分连接，间隙朝着负极2的表面逐渐变宽。垂直部分的间隙为0.7mm以上至2.5mm以下。版权所有（C）2008，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式