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31. 发明专利

JPH05167086A RESONANCE TUNNEL BARRIER STRUCTURE AND FABRICATION THEREOF 失效
公开(公告)号：JPH05167086A
公开(公告)日：1993-07-02
申请号：JP35066191
申请日：1991-12-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO , OSAKA JIRO
IPC分类号： H01L29/06 , H01L29/68 , H01L29/88
摘要： PURPOSE:To realize a high peak originally possessed by a resonance tunnel barrier structure including a quantum box. CONSTITUTION:A title structure comprises a first GaAs buffer layer 202, first and second AlAs buffer layers 203, 205 acting as barriers against carriers in the buffer layer 202, a GaAs quantum well layer 204 sandwiched between the first and second barrier layers, and a metal conical body 102 containing Al metal particles 101. The metal conical body 102 has its vertex which is in a second barrier layer 205 opposed to the first buffer layer 202 with respect to the quantum well layer 204 and which expands oppsitely to the quantum well layer 204. Hereby, there is completely eliminated any processing damage introduced following etching and regrowth at or in the vicinity of an electron confining region, and hence there is ensured a resonance tunnel characteristic reflexing quantum levels in the quantum box.

32. 发明专利

JPH02224373A MANUFACTURE OF COMPOUND SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH02224373A
公开(公告)日：1990-09-06
申请号：JP4619289
申请日：1989-02-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO , YANAGAWA FUMIHIKO
IPC分类号： H01L29/78 , H01L21/203
摘要： PURPOSE:To enable the formation of a single crystal insulating film of large resistivity and the realization of a MISFET low in power dissipation by a method wherein a first insulating film is formed on a surface of a (111) face orientation or a surface close to it in an arsenic atmosphere. CONSTITUTION:A solid arsenic source cell is kept at a temperature of 250-320 deg.C so as to retain an arsenic atmosphere of 1X10 torr or more, for instance, 1X10 torr while a single crystal insulating film CaxSr1-x is made to grow. As mentioned above, the deposition of the insulating film is carried out in an arsenic atmosphere, so that the group V elements high in vapor pressure out of elements constituting a compound semiconductor are restrained from evaporating from a compound semiconductor substrate 14 and the surface of the substrate 14 on which a fluoride thin film is epitaxially grown is kept in an excellent state keeping its stoichiometric composition as it is. Moreover, the surface energy of fluoride is minimum in a (111) face and fluoride grows in layer on the substrate of a (111) face orientation. By this setup, a single crystal insulating film of high resistivity can be formed, so that a compound semiconductor element such as a GaAs MISFET or the like small in power dissipation can be realized.

33. 发明专利

JPS5646579A JOSEPHSON INTERFERENCE METER CIRCUIT 失效
公开(公告)号：JPS5646579A
公开(公告)日：1981-04-27
申请号：JP12220079
申请日：1979-09-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAMOTO MASASHI , WAHO TAKAO , ISHIDA AKIRA
IPC分类号： H01L39/22 , H03K17/92 , H03K19/195
摘要： PURPOSE:To eliminate a resistance element used normally in a Josephson interference meter circuit by employing solid solution of lead and indium for a superconductive substance forming the electrode of the Josephson element and controlling the composition of the solid solution when forming the circuit with the Josephson element and an inductance element. CONSTITUTION:Josephson junction elements J1, J2 are connected by using an inductance element L1, and a bias current line 1 is connected to the closed loop having the elements. Further, an inductance element L2 connected to a control current line 2 is connected to the element L1 as a Josephson interference meter circuit M. When a resistance element is normally connected to the elements J1, J2 normally in this structure, superconductive substance electrodes 11, 13 disposed between the tunnel barrier layers 12 of the elements J1, J2 are formed of solid solution of lead and indium selected in weight ratio, and a resistance element is thus eliminated. Thus, there can be obtained a desired braking coefficient while simplifying the circuit configuration of the Josephson interference meter circuit.

34. 发明专利

JPH11195989A A/D CONVERTER 失效
公开(公告)号：JPH11195989A
公开(公告)日：1999-07-21
申请号：JP36753997
申请日：1997-12-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ITO TOSHIHIRO , WAHO TAKAO
IPC分类号： H03M1/36
摘要： PROBLEM TO BE SOLVED: To decrease the area for an A/D converter on a substrate or to reduce the area for a semiconductor substrate, to reduce power consumption and to increase the operating speed by reducing the number of components for the A/D converter integrated on the semiconductor substrate. SOLUTION: In the case of converting an analog signal voltage Vjin into an n-bit binary code consisting of 1st, 2nd,... bit signals, the analog signal is quantized into a ternary signal Qk.ak that takes a value of VL, VM, or VU. Time ternary signal Qk.ak is converted into a binary code bk.ak that denotes '0' when the ternary signal Qk.ak takes a level VL, denotes '1' when time ternary signal Qk.ak takes a level VM, and denotes '0' when the ternary signal Qk.ak takes a level VU. Then a k-th bit signal of the binary code is outputted by using the binary code dk.ak .

35. 发明专利

JPH10308669A ANALOG/DIGITAL CONVERTING DEVICE 失效
公开(公告)号：JPH10308669A
公开(公告)日：1998-11-17
申请号：JP11898797
申请日：1997-05-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO
IPC分类号： H03M1/36 , H03M5/20 , H03M7/02
摘要： PROBLEM TO BE SOLVED: To reduce power consumption and increase operating speed by digitally converting an n-ary signal to a binary signal as all the bits or partial bits of the binary code. SOLUTION: When the value of an analog signal Vin to be digitally converted to a binary code B is defined as V-1 to V-3 (on the condition of V-1

36. 发明专利

JPH1065187A RESONANCE TUNNEL DIODE 失效
公开(公告)号：JPH1065187A
公开(公告)日：1998-03-06
申请号：JP22200896
申请日：1996-08-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KITABAYASHI HIROTO , WAHO TAKAO
IPC分类号： H01L29/88
摘要： PROBLEM TO BE SOLVED: To obtain high ratio for a peak current to a valley current radio, without decreasing peak current density by inserting at least two positive hole barrier layers which become barriers to positive holes of a first, a second and a third semiconductors, in a quantum well layer. SOLUTION: For example, GaAs positive hole barrier layers 105, 107 are made 0.6nm in thickness. A GaSb quantum well layer 104 between a first barrier layer 103 of AlSb and the GaAs positive hole barrier layer 105 is made 4.5nm in thickness. Peaks of resonance tunnel probability that electrons in an InAs emitter layers 110 reach an InAs collector layer 102 are bundled, and the half band width does not becomes smaller than the half band width of the peak of resonance tunnel probability in the conventional structure for the same AlSb barrier width. The half band width of the peak of the resonance tunnel probability may be considered to be approximately proportional to the peak current density. Thereby the peak current density of an element does not become lower than that of the conventional structure.

37. 发明专利

JPH0946220A MULTIVALUED LOGICAL CIRCUIT 失效
公开(公告)号：JPH0946220A
公开(公告)日：1997-02-14
申请号：JP11324296
申请日：1996-04-10
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO
IPC分类号： H03K19/20 , H03K19/00 , H03K19/08
摘要： PROBLEM TO BE SOLVED: To provide a multivalued logical circuit whose manufacture is easy and whose constitution is simple by constituting a circuitry where several two-terminals semiconductor elements having differential negative resistance characteristics and representing voltage-current characteristics are connected to multiple-terminals semiconductor elements provided with several control terminals in series between main terminals. SOLUTION: In the semiconductor element serial connection circuit 1, q-pieces of semiconductor elements D1 -D6 (six) having the differential negative resistance characteristics and the voltage-current characteristics between the power terminal 2 and the terminal 3 are connected in series (q=m+n). In the serial connection circuit 1, sequentially taken m-pieces (three) of two-terminals semiconductor elements are DD1 -DD3 and n-pieces of remaining elements are the three-terminals semiconductor elements TD1 -TD3 having the control terminals. Peak current values on the respective voltage-current characteristics of q-pieces of elements D1 -D6 mutually differ. A common signal input terminal T1 is derived from the control terminals (c) of n-pieces of three- terminals elements, and a signal output terminal T2 is deriven from one connection midpoint (between (b) and (a)) of two adjacent semiconductor elements or plural or all connection midpoints.

38. 发明专利

JPH0677468A RESONANCE TUNNELING-TYPE TRANSISTOR 失效
公开(公告)号：JPH0677468A
公开(公告)日：1994-03-18
申请号：JP11806691
申请日：1991-04-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO
IPC分类号： H01L29/205 , H01L29/68
摘要： PURPOSE:To display the amplification function and the oscillation function of the title transistor by a method wherein at least one out of six semiconductor layers is inserted into a second semiconductor layer so as to form a plurality of semiconductor layer parts as base layer parts. CONSTITUTION:One out of semiconductor layers 21 as barrier layers against electrons and holes is inserted into a semiconductor layer 4 as a base layer so as to form two semiconductor layer parts 4a, 4b as base layer parts. The semiconductor layer parts 4a, 4b are provided respectively with the concentration distribution of P-type impurities so as to become lower toward the outside from the central part as viewed from the thickness direction. The semiconductor layer 21 as the barrier layer is inserted into the semiconductor layer 4 as the base layer in such a way that the semiconductor layer parts 4a, 4b can be obtained in the nearly equal thickness. Consequently, the transistor is provided with the same constitution as a resonance tunneling-type transistor in conventional cases and can obtain an amplification function and an oscillation function.

39. 发明专利

JPH05136052A MANUFACTURE OF III-V COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05136052A
公开(公告)日：1993-06-01
申请号：JP32531091
申请日：1991-11-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OSAKA JIRO , MURASHITA TATSU , WAHO TAKAO
IPC分类号： C30B29/40 , H01L21/20 , H01L21/203 , H01L33/30
摘要： PURPOSE:To prevent a second group III metal layer from being formed through a contaminated layer formed on the surface of a III-V compound semiconductor crystalline layer by preliminarily forming the second patterned group III metal layer on the III-V compound semiconductor crystalline layer and by heat-treating the second group III metal layer at the temperature at which the second group III metal layer melts and by cooling it. CONSTITUTION:On a III-V compound semiconductor crystalline layer 2, a group III metal layer 3 which is made of Al, Ga, In or an alloy of two or more metals out of Al, Ga and In is formed. Then, a group III metal layer 4, a patterned second group III metal layer, is heat-treated at the temperature at which the layer 4 melts and then it is cooled. A patterned group III metal crystalline layer 5 is formed from the patterned group III metal layer 4. By this method, it is eliminated that the patterned group III metal crystalline layer 5 is formed through a contaminated layer formed on the III-V compound semiconductor crystalline layer 2.

40. 发明专利

JPH0575103A SEMICONDUCTOR RESONANCE TUNNEL BARRIER STRUCTURE 失效
公开(公告)号：JPH0575103A
公开(公告)日：1993-03-26
申请号：JP25872691
申请日：1991-09-11
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIGEKAWA NAOTERU , WAHO TAKAO
IPC分类号： H01L29/06 , H01L29/66
摘要： PURPOSE:To obtain a resonance tunnel barrier structure having both sufficient current controllability and high speed device operation. CONSTITUTION:A semiconductor collector layer 1 doped with n-type impurities, a semiconductor first barrier layer 2, a semiconductor well layer 3, a semiconductor second barrier layer 4 and a semiconductor emitter layer 5 doped with n-type impurities are sequentially laminated to be formed on a GaAs substrate 6. The conduction band lowermost end of a semiconductor material for constituting the layers 2, 4 has a higher energy position than the conduction band lowermost end of a semiconductor material for constituting the layers 3, 5. The layer 3 is made of a direct transition type semiconductor material, and the layers 2, 4 are made of an indirect transition type semiconductor material.

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