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31. 发明专利

JPS5824238A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPS5824238A
公开(公告)日：1983-02-14
申请号：JP12191681
申请日：1981-08-05
申请人： NIPPON TELEGRAPH & TELEPHONE , HITACHI LTD
发明人： INABE YASUNOBU , SAGAWA AKIO , SUZUKI MASAYOSHI , IZAKI NAOYUKI , MATSUYAMA MITSUO
IPC分类号： H02M1/08 , H01L29/74 , H03K17/72 , H03K17/725 , H03K17/73
摘要： PURPOSE:To prevent a thyristor from malfunctioning by providing the 1st electrostatic capacity element between the anode potential of the thyristor and an electronic switch provided between a gate and cathode, and the 2nd electrostatic capacity element between the 1st element and cathode. CONSTITUTION:A transistor TR4 and a resistance 2 which constitute an electronic switch 3 are provided between the gate G and cathode K of a thyristor SCR1, and a TR6 and a diode 7 constituting the 1st electrostatic capacity element 5 are provided between the base of the TR4 and the anode terminal potential part of the SCR1. A capacitor 11 as the 2nd electrostatic capacity element 10 is further provided between the base of the TR6 and the cathode K of the SCR1. Consequently, when a sudden voltage is applied to the SCR1, a transient current is flowed through the TR4 to increase the recovery time constant of the TR6 constituting the electrostatic capacity element, and thus the active operation time of the TR4 is prolonged; when a transient voltage is applied, the capacity 11 is discharged through a diode 9 to prevent a break-through after the transient voltage ends.

32. 发明专利

JPH01292960A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH01292960A
公开(公告)日：1989-11-27
申请号：JP12176588
申请日：1988-05-20
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： KITANO JUNJIRO , INABE YASUNOBU
IPC分类号： H04M19/00 , H04Q3/42
摘要： PURPOSE:To obtain the semiconductor integrated circuit being suitable for making a telephone exchange subscriber's circuit small in size and electronic by forming an input resistance of a same phase feedback circuit and a current value determination use resistance of a constant-current driving circuit by a diffused resistor of the same structure, and setting a ratio of the latter resistance to the former resistance to below a prescribed value which can prevent a current-mixed oscillation. CONSTITUTION:In an electronic subscriber's circuit being a semiconductor integrated circuit, a constant-current determination use resistance RE of a constant-current driving circuit of PNPN switches 3, 4, and input resistances RIN, RIN, of a same phase feedback circuit 9 are formed by a diffused resistor of the same structure in the same semiconductor. Accordingly, a ratio RIN/RE of these resistances is always held with high accuracy even if a manufacture variance of an absolute value of the diffused resistor of the semiconductor integrated circuit is generated. Also, when this resistance ratio is set to below a value which can prevent a current-mixed oscillation, the stability of a protective operation at an electromixed time of a subscriber's line is secured. In this way, the semiconductor integrated circuit being suitable an electronic subscriber' s circuit being small in size and having high reliability can be obtained.

33. 发明专利

JPS63209295A LINE CURRENT DETECTING CIRCUIT 失效
公开(公告)号：JPS63209295A
公开(公告)日：1988-08-30
申请号：JP4033287
申请日：1987-02-25
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： KITANO JUNJIRO , INABE YASUNOBU
IPC分类号： H04M3/22 , H04M19/00 , H04Q3/42 , H04Q3/72
摘要： PURPOSE:To improve a current detecting accuracy by providing a two stage emitter follower circuit having a high input impedance in a current detecting part to detect the current so as to leave no influence to a feeding characteristic and correcting the current in an offset error generated in the two stage emitter follower circuit by using a correction constant current circuit. CONSTITUTION:Since the two stage emitter follower circuit of the current detecting parts 1, 2 is constituted of a pair of mutually complementary transistors, a loss in detection due to a drop in a voltage between a base and an emitter is eliminated, a load effect to a feeding resistance is eliminated according to the high input impedance characteristic of the emitter follower circuit nor the influence is left to the feeding characteristic. Since the correction constant current circuit 4 is constituted of a pair of transistors having the same construction as the pair of the mutually complementary transistors of the two stage emitter follower circuit, the correction current is formed based on a voltage difference between the base and the emitter of the pair of the mutually complementary transistors. Thereby, a highly accurate current detection can be attained.

34. 发明专利

JPS59229956A INPUT PROTECTION SYSTEM OF CALL AND ANSWER DETECTING CIRCUIT 失效
公开(公告)号：JPS59229956A
公开(公告)日：1984-12-24
申请号：JP10414383
申请日：1983-06-13
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUYAMA MITSUO , SATOU EIJI , ISHIZAWA AKIRA , KAWAMURA SENSHI , INABE YASUNOBU
IPC分类号： H02H9/04 , H04M3/18 , H04M3/02
摘要： PURPOSE:To attain an electronic constitution for the call and answer detection part in a switchboard by providing a circuit constitution which varies to low impedance when a voltage level exceeds the voltage level set only on the basis of the ground potential. CONSTITUTION:When call and answer detection operation is performed, a call signal current flowing through a resistance is converted by a current converting circuit 12 into a low level current proportional to an input, and the low-level current is converted by resistances 20-23 of an overvoltage limiting circuit 23 into a voltage, which is applied to a DC detecting circuit 18. The voltage which is applied to the DC detecting circuit 18 and proportional to the call signal current is filtered by a low-pass filter 16, and a comparator 17 outputs a call answer signal when the output of the low-pass filter 16 contains a DC component and its voltage level is higher than the reference voltage set by a DC voltage source 9. The overvoltage limiting circuit 23 has low impedance when the output current of the current converting circuit 12 increases, so that an overvoltage input to the DC detecting circuit 18 is suppressed by setting the resistance to a proper value.

35. 发明专利

JPS587924A SEMICONDUCTOR SWITCHING CIRCUIT 失效
公开(公告)号：JPS587924A
公开(公告)日：1983-01-17
申请号：JP10555081
申请日：1981-07-08
申请人： NIPPON TELEGRAPH & TELEPHONE , HITACHI LTD
发明人： INABE YASUNOBU , SAGAWA AKIO , SUZUKI MASAYOSHI , IZAKI NAOYUKI , MATSUYAMA MITSUO
IPC分类号： H02M1/08 , H03K17/72 , H03K17/732
摘要： PURPOSE:To reduce the variation of extracting current even if operational power voltage is changed by constituting a driving circuit by a current extracting circuit for cutting off a thyristor of which output resistance is sufficiently increased. CONSTITUTION:A driving circuit with the sufficiently large output resistance of a current extracting circuit 20 is used for a titled circuit. Load resistors 4, 4a are connected to a cathode terminal K and an anode terminal A, respectively and negative and positive power source (voltage -VA, +VA) 5, 5a are connected to the cathode terminal K and the anode terminal A respectively. Consequently, when a thyristor 1 is connected, the potential of the cathode and gate terminals K, G is changed from +VA to -VA by the resistance values RA, RAa of the load resistors 4, 4a. Thus, even if the operational potential of the thyristor 1 is changed, the variation of current IG can be reduced because the output resistance value of the current extraction driving circuit 20 is large.

36. 发明专利

JPS56169285A PULSED ELECTRIC POWER CIRCUIT 失效
公开(公告)号：JPS56169285A
公开(公告)日：1981-12-25
申请号：JP7267180
申请日：1980-06-02
申请人： NIPPON TELEGRAPH & TELEPHONE , HITACHI LTD
发明人： HAYASHI TOSHIO , INABE YASUNOBU , OGIUE KATSUMI
IPC分类号： G11C11/41 , G11C5/14 , G11C11/413 , H03K19/00
摘要： PURPOSE:To obtain a pulsed electric power circuit which operates at a high speed and high stability having large operation margin of a power source, by separating a pulse-component passing circuit for a chip selection signal, etc., from an internal voltage generating circuit for determining a driving signal level of current source. CONSTITUTION:A pulse V1 which corresponds to a binary chip selection signal from an input buffer circuit 8 is applied to a level converting circuit 9 connected to an internal voltage generating circuit which generates a reference potential V'CC with a constant potential difference from a negative power source VEE. Then, the output V2 of a circuit 9 whose high level and low level follow up the potential V'CC is passed through a power amplifier 10 to obtain a high-speed power-source driving signal VPP with excellent stability. The circuit 9, amplifier 10, etc., where this pulse component passes are separated from the internal voltage circuit 11, so the level of the signal VPP following up the potential V'CC follows up the level of the power source VEE: and a current source driven with the signal VPP is hardly influenced by the power source VEE, increasing the operation margin. Therefore, using this circuit minimizes the deterioration in speed performance of a semiconductor storage element and also reduces the power consumption.

37. 发明专利

JPH03113914A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPH03113914A
公开(公告)日：1991-05-15
申请号：JP10296890
申请日：1990-04-20
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUYAMA MITSUO , OKUHARA SHINJI , SAGAWA AKIO , INABE YASUNOBU
IPC分类号： H03K17/725 , H03K17/567 , H03K17/615 , H03K17/73
摘要： PURPOSE:To make the on-off detection characteristic of a main current suitable and to reduce the area occupied of an element by detecting the on-off state of a flowing current to a 1st anode terminal with a flowing current of a 2nd anode terminal. CONSTITUTION:The emitter of a transistor(TR) Q1 being a component of a PNPN switch 1 and the emitter of a TR Q51 are connected to form a 1st anode terminal A1 for the main electrode. Furthermore, the emitter of a TR Q52 whose collector and base are connected in common to those of the TR Q51 is used as a 2nd anode terminal A2 for on/off detection. The on/off detection of a main current is implemented by the presence of a current flowing to the emitter of the TR Q52 whose collector and base are connected in common to those of the TR Q51 turned finally off at the off-control. Thus, the on/off state of the main current is detected more accurately. Moreover, the TRs Q51, Q52 are integrated the same as the PNPN switch and the area occupied by the element is made small.

38. 发明专利

JPH03113913A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPH03113913A
公开(公告)日：1991-05-15
申请号：JP10296790
申请日：1990-04-20
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUYAMA MITSUO , OKUHARA SHINJI , SAGAWA AKIO , INABE YASUNOBU
IPC分类号： H03K17/725 , H03K17/567 , H03K17/615 , H03K17/73
摘要： PURPOSE:To surely detect on/off of a main current by providing a 2nd anode terminal for detecting the on/off state of the main current to a main current switch circuit. CONSTITUTION:The on-control is implemented by supplying an on-driving current from a gate G, a 4-terminal PNPN switch 2 is turned on, then transistors(TRs) Q5, Q6 are turned on and a load current flows from a 1st anode A to a cathode K. Moreover, since a TR Q12 is simultaneously turned on, an on-detection current flows from a 2nd anode A2 to the cathode K. Then the off-control is implemented by supplying an off-driving current from an off-control input terminal B to interrupt a load current flowing to the anode A1 to the cathode K. Thus, the detection characteristic is ensured and the occupied area for the detection element is decreased, then high circuit integration is attained.

39. 发明专利

JPS62207023A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPS62207023A
公开(公告)日：1987-09-11
申请号：JP4839286
申请日：1986-03-07
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUYAMA MITSUO , INABE YASUNOBU
IPC分类号： H03K17/73
摘要： PURPOSE:To detect properly the on/off state of a main current even when a main current switch is in any operating potential to a control power supply by detecting the on/off state of the main current by a current flowing respectively into the 1st detection terminal or not of the 2nd detection termonal. CONSTITUTION:When a PNPN switch 1 is in the on-state and a potential of an anode terminal A is higher than an earth potential of the control side, the 1st detection transistor (TR) Q4 is active and the on-detection current flows from the 1st detection terminal C1. When a potential of a cathode terminal K is lower than the control power supply V2, the 2nd detection TR Q5 is active and the ON-detection current flows to the 2nd detection terminal C2. The flowing current from the 1st and 2nd detection terminals C1, C2 acts like flowing itself to the sensing resistor R3 and the on/off state of the PNPN switch 1 is detected depending on the presence of the current flowing to the sensing resistor R3.

40. 发明专利

JPS60167522A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPS60167522A
公开(公告)日：1985-08-30
申请号：JP2180184
申请日：1984-02-10
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： OOHIGATA ICHIROU , MATSUYAMA MITSUO , KIMURA TADAKATSU , INABE YASUNOBU
IPC分类号： H03K17/16 , H03K17/72 , H03K17/73
摘要： PURPOSE:To secure the actuation of a PNPN switch with high dv/dt tolerance and high sensitivity by using an element of PNPN structure to drive a short circuit protecting TR which gives a short circuit to a P-N junction at one side of the PNPN switch. CONSTITUTION:When the transient voltage having a sudden rise is applied between an anode A and a cathode K, the drive current of a short-circuiting TRQ1 is supplied from a place equivalent to a cathode gate through a PNPN element 2. Thus the TRQ1 is driven with the characteristics similar to the stored residual charge produced by the composite TR effect of a PNPTR and an NPNTR in a PNPN switch 1. Thus the dv/dt effect protecting capacity. While the element 2 is short-circuited by the P-N junction of the anode A and an anode gate GA to a DC action and turned off. Therefore the TRQ1 is not actuated either. Then the gate ignition sensitivity and the minimum holding current of the switch 1 are decided by a resistance R. The resistance of such a level that prevents the misignition due to the leakage current of the switch 1 is needed to the R. Therefore the high ignition sensitivity is obtained from the gate.

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