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    • 33. 发明专利
    • AMORPHOUS SOLAR CELL
    • JPH0653533A
    • 1994-02-25
    • JP20240692
    • 1992-07-29
    • MITSUI TOATSU CHEMICALS
    • MIYAJI KENJIASHIDA YOSHINORIFUKUDA NOBUHIRO
    • H01L31/04
    • PURPOSE:To enhance performance, especially open terminal voltage, of an amorphous solar cell by placing a p-type gallium nitride thin film between a transparent electrode and a p-type semiconductor thin film. CONSTITUTION:An amorphous silicon solar cell is constituted of a translucent substrate 1, a transparent electrode 2, a p-type semiconductor thin film 4, an i-type semiconductor thin film 5, an n-type semiconductor thin film 6, and an electrode 7, laminated sequentially. A chemically stable semiconductor thin film having low resistance and very high transmittance of visible light is placed on a transparent conductive oxide between the transparent electrode 2 and the p-type semiconductor thin film 4. The p-type gallium nitride thin film 3 is preferably formed by 5-100Angstrom thick. This constitution realizes an amorphous solar cell having high open terminal voltage. Furthermore, conductivity type of gallium nitride can be easily controlled to p-type only through impurity control and thereby reverse n/p junction is relaxed, resulting in further improvement of open terminal voltage.