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31. 发明专利

JPS63255303A GRAPHITE MOLD FOR HOT PRESSING 失效
公开(公告)号：JPS63255303A
公开(公告)日：1988-10-21
申请号：JP9150687
申请日：1987-04-13
申请人： IBIDEN CO LTD
发明人： TAKAGI TAKASHI
IPC分类号： B22F3/14 , B28B3/00 , C23C14/34
摘要： PURPOSE:To obtain a graphite mold for hot pressing by which a dense high purity sintered body can be produced, by regulating the impurity content in a graphite mold for hot pressing metal or ceramic powder to a prescribed value or below. CONSTITUTION:The impurity content in a graphite mold for hot pressing metal or ceramic powder is reduced to

32. 发明专利

JPS63135783A GRAPHITE MOLD FOR HOT PRESS 失效
公开(公告)号：JPS63135783A
公开(公告)日：1988-06-08
申请号：JP28260786
申请日：1986-11-27
申请人： IBIDEN CO LTD
发明人： TAKAGI TAKASHI
IPC分类号： B30B11/02 , B22F3/14 , F27B17/00

33. 发明专利

JP2002313888A JIG FOR SEMICONDUCTOR 失效
公开(公告)号：JP2002313888A
公开(公告)日：2002-10-25
申请号：JP2001110066
申请日：2001-04-09
申请人： IBIDEN CO LTD
发明人： NORO TADASHI , TAKAGI TAKASHI
IPC分类号： H01L21/683 , H01L21/205 , H01L21/26 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a jig for semiconductor which can improve the processing quality of a wafer. SOLUTION: The jig is used for the thermal treatment of the wafer. A wafer pocket 10 becoming a recessed part where the wafer is placed is arranged in a top face 12. The jig for semiconductor is constituted of a material which is generated by a CVD method including free carbon and is mainly composed of silicon carbide.

34. 发明专利

JP2002160997A METHOD OF PRODUCING CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JP2002160997A
公开(公告)日：2002-06-04
申请号：JP2000357963
申请日：2000-11-24
申请人： IBIDEN CO LTD
发明人： TAKAGI TAKASHI , YASUDA MASAHIRO
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a crucible for pulling up a silicon single crystal, whose durability is excellent and production cost is low, and which may easily produce a normal silicon single crystal free from generation of crystal lattice distortion. SOLUTION: In this method, the crucible for pulling up a silicon single crystal is composed of a quartz crucible 15 for housing silicon material and a carbon crucible 10 which is composed so as to enclose the quartz crucible from the outside. The carbon crucible is formed to a desired shape and the quartz crucible 15 is formed by forming a quartz layer along an inner face 19 of the carbon crucible 10. The formation of a quartz layer is performed along the inner face 19 of the carbon crucible 10 in the crucible 1 for pulling up a silicon single crystal, at each time when the silicon single crystal is pulled up.

35. 发明专利

JP2002097082A METHOD OF MANUFACTURING CARBON PART 失效
公开(公告)号：JP2002097082A
公开(公告)日：2002-04-02
申请号：JP2000233594
申请日：2000-08-01
申请人： IBIDEN CO LTD
发明人： TANAKA TOYOAKI , TAKAGI TAKASHI , SAKASHITA KEIICHI
IPC分类号： C04B35/83 , B28B1/26 , B28B1/52 , C04B35/52
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing carbon parts which can be manufactured easily into a predetermined form and can be used satisfactorily under severe conditions. SOLUTION: The method of manufacturing carbon parts begins with a suction forming process. In this suction forming process, carbon fibers are suspended in a liquid to make a slurry 31 and a suction forming mold 2 having porous planes 20 is dipped in the slurry 31. Then the liquid in the slurry 31 is sucked toward a back of the porous planes 20 to form a molded form 3 on a surface of the planes 20 and thereafter the mold 2 is pulled up from the slurry 31. The next is a drying process to dry the molded form 3, which is followed by a calcinations process to calcine the molded form 3 and a purification process to remove impurities from the molded form 3. The last step is a film coating process to form a thermally decomposed carbon coating on a surface of the calcined molded form 3.

36. 发明专利

JP2001203190A COMPONENT FOR SEMICONDUCTOR MANUFACTURING MACHINE AND THE MACHINE 失效
公开(公告)号：JP2001203190A
公开(公告)日：2001-07-27
申请号：JP2000012180
申请日：2000-01-20
申请人： IBIDEN CO LTD
发明人： NORO TADASHI , TAKAGI TAKASHI , SAKASHITA KEIICHI
IPC分类号： H01L21/302 , G01N23/20 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a component for a semiconductor manufacturing machine together with a semiconductor manufacturing machine using it, which is stably used for an extended period without contaminating a silicon wafer. SOLUTION: A component 1 which is used for a semiconductor manufacturing machine that uses plasma comprises a silicon carbide body comprising a silicon carbide formed with a CVD method. Related to silicon carbide, A/B is 1 or higher for an X-ray diffraction pattern, where A is a peak intensity on (111) surface while B is a peak intensity on (220) surface.

37. 发明专利

JP2001203187A COMPONENT FOR SEMICONDUCTOR MANUFACTURING MACHINE AND THE MACHINE 失效
公开(公告)号：JP2001203187A
公开(公告)日：2001-07-27
申请号：JP2000010766
申请日：2000-01-19
申请人： IBIDEN CO LTD
发明人： NORO TADASHI , TAKAGI TAKASHI , SAKASHITA KEIICHI
IPC分类号： H01L21/302 , C04B41/87 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide components of a semiconductor manufacturing device with less impurities contamination than before when irradiated with a plasma and excellent in durability. SOLUTION: A part 1 used for a semiconductor manufacturing machine that uses plasma comprises a base material 11 of carbon material, and a coat 12 of silicon carbide formed on the surface of base material 11 by a CVD method. The film thickness of the coat 12 is preferred to be 80 μm or thicker.

38. 发明专利

JP2001200365A PARTS FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2001200365A
公开(公告)日：2001-07-24
申请号：JP2000013145
申请日：2000-01-21
申请人： IBIDEN CO LTD
发明人： NORO TADASHI , TAKAGI TAKASHI , SAKASHITA KEIICHI
IPC分类号： H01L21/02 , C23C16/32
摘要： PROBLEM TO BE SOLVED: To provide parts for a semiconductor manufacturing apparatus which is more excellent in durability under the plasma irradiation than a conventional one and has the electric characteristics favorable for plasma treatment, and the semiconductor manufacturing apparatus using the parts. SOLUTION: The parts 1 for the semiconductor manufacturing apparatus making use of the plasma comprises a base member 11 formed of carbon and a film 12 made of silicon carbide formed by a CVD method on the surface of the base member 11. The specific resistance of the base member 11 is 1.0×10-3 to 2.0×10-3 Ω.cm while the specific resistance of the film 12 is 1.0 to 1.0×103 Ω.cm.

39. 发明专利

JP2000190910A PACKING METHOD, AND PACKING CONTAINER 失效
公开(公告)号：JP2000190910A
公开(公告)日：2000-07-11
申请号：JP37091398
申请日：1998-12-25
申请人： IBIDEN CO LTD , IBIDEN SEIMITSU KK
发明人： TAKAGI TAKASHI , KONDO TOMEO
IPC分类号： B65B13/00 , B65B17/00 , B65D5/50
摘要： PROBLEM TO BE SOLVED: To surely fix an article to be packed in a box body without any play without using any cushioning material by winding a binding means around the article to be packed stored in the box body, binding it, and fixing the binding means to an inner wall surface of the box body. SOLUTION: A packing container 1 is provided with a box body 2 comprising a corrugated fiberboard box, and a binding band 4 to bind a plurality of products 3 as articles to be packed. Each product 3 is stored in the box body 2 in a neatly stacked condition with excellent balance in a central part of a bottom wall of the box body 2. The stacked products 3 are covered with a sheet-like thin cushioning material 6 formed of a soft material such as paper to form a product group 3a, and two binding bands 4A, 4B are wound around the product group 3a. End parts of the binding bands 4A, 4B are passed through slits 5 provided in side walls 2a, 2b opposite to each other of the box body 2, and exposed outside, and wound around an outer peripheral surface of the bottom wall 2c of the box body 2, joined therewith and fixed thereto.

40. 发明专利

JPH09290326A CARBON ELECTRODE 失效
公开(公告)号：JPH09290326A
公开(公告)日：1997-11-11
申请号：JP13093896
申请日：1996-04-25
申请人： UNO YOSHIYUKI , IBIDEN CO LTD
发明人： UNO YOSHIYUKI , OKADA AKIRA , NAKANISHI HIROTO , KAKU JIYOUNEI , TAKAGI TAKASHI
IPC分类号： B23H1/04 , B01D65/02 , B23H1/06 , C02F1/44
摘要： PROBLEM TO BE SOLVED: To provide a carbon electrode which can restrain the electrode wear and tear at the electric discharge machining time and electric discharge machine a work piece with a high accuracy. SOLUTION: In this carbon electrode 7 consisting of a piled and grown thermal decomposition carbon, the electrode surface 71 for electric discharge machining is made by an orthogonal surface to the piled and grown surface of the thermal decomposition carbon. This carbon electrode 7 is composed of a columnar carbon base material 2 and the piled layer 1 of the thermal decomposition carbon formed in an annual ring shape around a carbon base material and it is better that the electrode surface for electric discharge machining is made by the cut surface cut in the radius direction 21 of the carbon base material. The carbon base material is, for example, a carbon fiber.

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