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31. 发明专利

JPH02124525A LIQUID CRYSTAL CHARGING DEVICE 失效
公开(公告)号：JPH02124525A
公开(公告)日：1990-05-11
申请号：JP27627388
申请日：1988-11-02
申请人： HITACHI LTD
发明人： KANEKO HIROSHI , MIMURA AKIO , SUZUKI TAKASHI , KONISHI NOBUTAKE
IPC分类号： G02F1/13 , G02F1/1339
摘要： PURPOSE:To equalize the space of a liquid crystal cell and to improve the yield by pressing both surfaces of the liquid crystal cell by a flexible film as the external film of a liquid alveolus which contains pressurized liquid, and charging liquid crystal and sealing the liquid injection hole of the liquid crystal cell. CONSTITUTION:The liquid crystal cell 2 is fitted in a bag which contains liquid in an external container, i.e., the liquid alveolus 10 whose outside is made of the flexible film 9, the pressure in the liquid crystal cell 2 is reduced in a vacuum evacuating device, and then the liquid crystal injection hole of the liquid crystal cell 2 is dipped in the liquid crystal bath in a boat 7 containing the liquid crystal 1. Then, while the boat 7 of the liquid crystal bath and liquid crystal cell 2 are held, the container 8 is put back to atmospheric pressure entirely to inject the liquid crystal 1 into the liquid crystal cell 2. Then, while the liquid crystal 1 is injected into the liquid crystal cell 2 and the liquid crystal injection hole is sealed, the outsides of the substrates 3 and 4 of the liquid crystal cell 2 are pressed by the liquid alveolus 10. Consequently, the space between the substrates 3 and 4 is made constant and the yield is improved.

32. 发明专利

JPH0277017A LIQUID CRYSTAL DISPLAY PANEL 失效
公开(公告)号：JPH0277017A
公开(公告)日：1990-03-16
申请号：JP22740188
申请日：1988-09-13
申请人： HITACHI LTD
发明人： KIMURA ETSUKO , SUZUKI TAKASHI , ONO KIKUO , MIMURA AKIO , KONISHI NOBUTAKE
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/3205 , H01L23/52 , H01L27/12 , H01L29/40 , H01L29/786
摘要： PURPOSE:To obtain the liquid crystal display panel having good characteristics and high accuracy at a good yield by using a polycrystalline indium tin oxide film having a crystal structure of a cubic bixbyite type to a part of the panel. CONSTITUTION:The polycrystalline ITO film having the crystal structure of the cubic bixbyite type is used as the indium tin oxide (ITO) film. Namely, one picture element and common electrode leader part of the liquid crystal display panel are constituted to a switching TFT part 113, a capacitor part 114 for charge holding, and a common electrode leader part 115. The common electrode leader part 115 is connected through a through-hole 109 provided on the common electrode 106 directly to the common leader common electrode 111 and the lower electrode 106 is formed of the polycrystalline ITO film of the cubic bixbyite type. Both the transmittance and the electrical conductivity are enhanced in this way and the characteristics as the transparent conductive film and characteristics as the liquid crystal display panel are improved.

33. 发明专利

JPH0214577A THIN FILM TRANSISTOR 失效
公开(公告)号：JPH0214577A
公开(公告)日：1990-01-18
申请号：JP23874687
申请日：1987-09-25
申请人： HITACHI LTD
发明人： KAWACHI GENSHIROU , YOSHIMURA MASAO , KONISHI NOBUTAKE
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To suppress an increase in an off-current at the time of photoirradiation by forming a defective layer containing a defect in appropriate density in a specific region inside an active region between both the source and drain regions. CONSTITUTION:Due to an existing defective layer 7 of high resistance, the film thickness of an effective layer is thinned from t1 to t2 so that an off-current reduces similarly to the case where the film thickness is made thin. Further, at the time of photoirradiation, a surplus carrier is excited allover the active layer. Generally, however, the relation tauproportional 1/Nt is formed between a life (tau) of the surplus carrier and the density Ntd of a defect acting as the center of reunion of the carrier so that the surplus carrier generated inside the defective layer 7 almost does not contribute to conduction. Further, also the carrier generated in the region excepting the defective layer 7 diffuses toward the defective layer due to a difference of a lift and depending on a density grade of the carrier generated in the film thickness direction for being rejoined and extinct so that the off-current at the time of photoirradiation gets a more remarkable suppressing effect than the time of simple film-thinning from the film thickness t1 to t2.

34. 发明专利

JPH01267616A LIQUID CRYSTAL DISPLAY 失效
公开(公告)号：JPH01267616A
公开(公告)日：1989-10-25
申请号：JP9558488
申请日：1988-04-20
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： IWABUCHI KATSUHIRO , OIKAWA SABURO , MIMURA AKIO , KONISHI NOBUTAKE
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1335 , G02F1/1368 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To enable surer light shielding without entailing complication of process by providing a light shielding film to at least the region on the rear surface of a substrate opposite to the active region of a semiconductor element. CONSTITUTION:A polysilicon layer deposited on the rear surface of the glass substrate 1 is patterned to the same size as the size of the island-shaped polysilicon consisting of a source-drain layer 2 and a channel layer 3 and is left as the rear surface light shielding film 11 at the time of forming the source- drain layer 2, the channel layer 3 and the gate polysilicon layer 6. The off current of a thin-film transistor is thereby decreased and the light shielding film 11 of the size to maximize both the opening rate and light shieldability is formed. Further, the simultaneous deposition of said film at the time of forming the polysilicon on the front surface is possible if the polysilicon layer is used for the light shielding film 11 and, therefore, the stage is simplified.

35. 发明专利

JPH01170047A THIN FILM TRANSISTOR 失效
公开(公告)号：JPH01170047A
公开(公告)日：1989-07-05
申请号：JP32706787
申请日：1987-12-25
申请人： HITACHI LTD
发明人： ONO KIKUO , MIMURA AKIO , KONISHI NOBUTAKE
IPC分类号： H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To make it possible to obtain stable and superior contact characteristics by a method wherein the reduced metal part of a transparent electrode is provided at the contact interface between the transparent electrode and a metal for wiring. CONSTITUTION:A transparent electrode at the contact part between the transparent electrode 8 and a metal 7 for wiring is reduced with hydrogen to form the contact part into a contact structure, wherein indium 9 not containing oxygen is interposed between the electrode 8 and the metal 7. As a reduction method, there is a method wherein after the transparent electrode is formed using a hydrogencontaining SiN film as an insulating film for forming a thin film transistor, this substrate is annealed at a temperature at which hydrogen is removed. Among methods to implant hydrogen to expose during plasma hydrogen discharge are a method to implant by an ion implantation method, for example, and the like. Thereby, oxygen at the contact part is reduced, such an oxide film as an Al2O3 film is removed and good contact characteristics are obtained.

36. 发明专利

JPH01158414A THIN FILM TRANSISTOR SUBSTRATE 失效
公开(公告)号：JPH01158414A
公开(公告)日：1989-06-21
申请号：JP31624887
申请日：1987-12-16
申请人： HITACHI LTD
发明人： KANEKO HIROSHI , KONISHI NOBUTAKE , SUZUKI TAKAYA
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1333 , G02F1/1368 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To eliminate the etching problem of a glass substrate due to unnecessary polysilicon film removal and to obtain superior light transmission characteristics by providing a transparent protection film made of metal oxide with chemical resistance on a reverse-side surface. CONSTITUTION:The protection film 18 which has large light transmissivity and is hardly affected by a polysilicon film etchant and affinitive with the glass substrate is formed on the side of the reverse surface 5 of the glass substrate 1. This protection film 18 is etched slower with the polysilicon etching liquid than polysilicon films 6 and 9 sticking on the protection film 18 and has chemical resistance. Consequently, even if parts where etching is completed early and slowly are formed owing to the film quality distribution of polysilicon films 6 and 9 sticking on the protection film 18, the protection film 18 is sufficiently durable. Further, the protection film having the superior transmissivity is present even after the unnecessary polysilicon film is etched away, and a decrease in the light transmissivity is nearly eliminated.

37. 发明专利

JPH01120868A THIN FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01120868A
公开(公告)日：1989-05-12
申请号：JP27833887
申请日：1987-11-05
申请人： HITACHI LTD
发明人： AOYAMA TAKASHI , KAWACHI GENSHIROU , KONISHI NOBUTAKE , SUZUKI TAKAYA
IPC分类号： H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To reduce a leakage current without loss of the ON current of a TFT by providing a semiconductor region having a conductivity type opposite to that of source and drain under a semiconductor region which becomes the source and drain. CONSTITUTION:An i-layer polycrystalline silicon film is deposited on a glass substrate 1, photoetched to allow a polysilicon layer for forming a TFT to remain, and a gate insulating film 6 and a gate electrode 7 are deposited. Then, boron is implanted, and a P-type region is formed on a source 2, a drain 3 and a semiconductor region 5 having a conductivity type opposite to that of the source 2, and the drain 3. Further, phosphorus is implanted, thereby forming an N-type semiconductor region which become the source 2 and the drain 3. Then, after a PSG is deposited, an ion implanted layer is activated. Subsequently, after a contact hole is formed, aluminum is sputtered, and then photoetched to form aluminum electrodes 9, thereby forming the TFT.

38. 发明专利

JPS63221679A THIN-FILM SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63221679A
公开(公告)日：1988-09-14
申请号：JP5404487
申请日：1987-03-11
申请人： HITACHI LTD
发明人： KONISHI NOBUTAKE , ONO KIKUO , SUZUKI TAKAYA , MIYATA KENJI
IPC分类号： H01L21/205 , H01L21/336 , H01L27/12 , H01L29/423 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a TFT structure in which hydrogenation effect can be sufficiently achieved without depending on a channel length by forming the thickness of a gate electrode to a specific value or less. CONSTITUTION:A TFT 100 is formed of a polycrystalline silicon having a source region 2, a drain region 3, a channel region 4, a gate insulating film 5, a polysilicon gate electrode 6, a protective PSG film 7, a source electrode 20, and a drain electrode 30 on an insulating substrate 1. Then, the thickness tG of the gate electrode 6 of the polysilicon is set to 1500Angstrom or less. When the tG becomes 2000Angstrom or less, muFE abruptly rises, and VTH decreases. This is because the residue of activated hydrogen absorbed to the electrode 6 arrives at the surface of the region 4 and unbonded polysilicon is bonded to hydrogen. No change in the characteristic even if the tG is set to 1000Angstrom or less is because, even if the hydrogen is invaded to the deep layer of the region 4, the formation of the channel is limited to an extremely thin layer of the surface. The gate electrode is formed to the thickness of the degree or less in which the hydrogenation is effected to uniformly hydrogenate the whole channel region.

39. 发明专利

JPS6371882A REDUNDANCY OF PLANAR IMAGE DEVICE 失效
公开(公告)号：JPS6371882A
公开(公告)日：1988-04-01
申请号：JP21579186
申请日：1986-09-16
申请人： HITACHI LTD
发明人： MIMURA AKIO , KONISHI NOBUTAKE , HOSOKAWA YOSHIKAZU , SUZUKI TAKAYA , MIYATA KENJI
IPC分类号： G09F9/30 , G01R31/26 , G02F1/133 , G02F1/136 , G02F1/1368 , G09G3/36 , H01L21/66

40. 发明专利

JPS62295465A THIN FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62295465A
公开(公告)日：1987-12-22
申请号：JP13832486
申请日：1986-06-16
申请人： HITACHI LTD
发明人： AOYAMA TAKASHI , MIMURA AKIO , YOSHIMURA MASAO , ADACHI HIDEMI , KONISHI NOBUTAKE
IPC分类号： H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a clear image without defect at high responding speed by forming a channel region of a thin film transistor (TFT) of polysilicon, forming source/drain regions of a-Si, and forming the junction of the regions in the a-Si. CONSTITUTION:An I-type polysilicon film (channel region 2) is deposited by a reduced pressure CVD method on a substrate 1 of a glass plate, I-type layer (a-Si) 3a, 3b and N type layer (a-Si) 3b, 4b to become source and drain regions 3, 4 are continuously formed by a plasma CVD method. After source and drain regions 3, 4 are formed by photoetching, an SiO2 film for a gate insulating film 5 is deposited on the regions. After holes for source and drain electrodes are formed by photoetching, aluminums for a gate electrode 6 and source/drain electrodes 7, 8 are deposited. Thus, a reverse leakage current can be reduced without loss of the electric field mobility of the TFT to obtain a clear image without defect at high responding speed.

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