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    • 34. 发明专利
    • RESISTANCE ELEMENT FOR SUPERCONDUCTING INTEGRATED CIRCUIT
    • JPH10163540A
    • 1998-06-19
    • JP31591596
    • 1996-11-27
    • HITACHI LTD
    • KOMINAMI SHINYAMITA REEKO
    • H01L39/22
    • PROBLEM TO BE SOLVED: To prevent the deviation of a sheet resistance of a resistor from a designed value by forming such a silicon film that is in contact with the upper surface of the resistor, covers the entire upper surface of the resistor except the parts connected to superconducting wiring, and does not exist in the other area than the upper surface. SOLUTION: After a base insulating film 2 is formed on a silicon substrate 1 by depositing silicon dioxide, a molybdenum film and a silicon film are deposited on the insulating film 2. Then a resistor protecting layer 3 is formed on the silicon film by forming and etching a photoresist. After the formation of the protective layer 3, a resistor 4 is formed by etching the molybdenum film by using the protective layer 3 as a mask. The width accuracy of the resistor 4 is improved by reducing the retreat of the silicon film, which becomes a mask by utilizing the etching rate difference between the molybdenum film and silicon film. Next, an interlayer insulating film 5 and superconducting wiring 6 are formed.
    • 36. 发明专利
    • SUPERCONDUCTING CONTACT
    • JPH098365A
    • 1997-01-10
    • JP14998195
    • 1995-06-16
    • HITACHI LTD
    • KOMINAMI SHINYAMITA REEKO
    • H01L39/00
    • PURPOSE: To increase the superconducting critical current flowing through a contact part without increasing the planar dimensions by employing a protruding or recessed structure at least partially on the contacting faces of two or more wirings or thin films of superconductor. CONSTITUTION: After depositing silicon dioxide 2 on a silicon substrate 1 by high frequency magnetron sputtering employing argon gas, niobium is deposited by 500nm by DC magnetron sputtering employing argon gas. It is then micromachined by reactive ion etching using CF4 gas thus forming a superconducting interconnection of Nb having line width of 1.5μm. The interconnection is subjected again to reactive ion etching by 250nm deep in the direction of thickness to form an irregular contact face 3 thus obtaining a lower layer superconducting interconnection 4 of Nb including the contact face 3. A protrusion in the center of contact face 3 has width of 0.5μm.
    • 37. 发明专利
    • PATTERN FORMATION
    • JPH07142776A
    • 1995-06-02
    • JP28640693
    • 1993-11-16
    • HITACHI LTD
    • YAMADA KOJIKOMINAMI SHINYAMITA REEKO
    • H01L39/24
    • PURPOSE:To prevent narrow part of the corner end of wiring pattern by providing a square groove at the predetermined position on a substrate, thereafter laminating a metal film and a resist film on the entire part, inserting the corner end part of photomask into the groove to form a resist pattern and thereafter processing a metal film pattern and removing resist on such metal film pattern. CONSTITUTION:A square groove 12 having tapered angle is formed at two predetermined locations on a substrate 11. Next, Nb film 13 is deposited on the substrate 11 and a resist film 14 is formed on it. Thereafter, a corner end of the photomask is inserted into the groove 12 by mask alignment and pattern transfer is performed. Moreover, after the transfer, a resist pattern 14' to be deloped is formed. Etching is carried out using the resist pattern 14' as a mask to pattern the Nb film 13 and the Nb film pattern 13' is formed by removing the resist pattern 14'. Accordingly, connecting area at the wiring pattern connecting portion can be formed as it is designed.
    • 39. 发明专利
    • CONNECTING STRUCTURE FOR SUPERCONDUCTING WIRING
    • JPH0637365A
    • 1994-02-10
    • JP19188792
    • 1992-07-20
    • HITACHI LTD
    • YAMADA KOJIKOMINAMI SHINYATAKAHASHI SACHIKO
    • H01L39/24
    • PURPOSE:To realize a superconducting connection of an Nb/Nb connection and to reduce a connecting area and a wiring pitch by forming a connecting member of a superconducting wiring of one layer of a lower electrode in the wiring for connecting superconducting devices therebetween on a board. CONSTITUTION:A board 11 is coated with a three-layer film of a lower electrode 12 made of an Nb film, an AlOx layer 13 to become a tunnel barrier layer and an upper electrode 14 made of an Nb film by a sputtering method. Then, after an inductor pattern B having first superconducting wirings A-A' and a connecting part is formed, an insulating film 15 is provided, a connecting part of a first superconducting wiring is dry etched to remove the film 14 and the layer 13, a surface of the electrode 12 is exposed, and a steplike sectional shape is formed at the connecting part of the wirings A-A'. Thereafter, after the connecting part is surface-cleaned, an Nb film 17 is formed on the entire surface by sputtering, and eventually the wiring 17 and a connecting wiring electrode 17' are simultaneously pattern-formed by dry etching.
    • 40. 发明专利
    • VERTICAL TYPE MAGNETIC FLUX COUPLING JOSEPHSON DEVICE
    • JPH04186886A
    • 1992-07-03
    • JP31401190
    • 1990-11-21
    • HITACHI LTD
    • HATANO YUJIYAMADA KOJIMIYAMOTO NOBUOKOMINAMI SHINYAHIRANO MIKIO
    • H01L39/22
    • PURPOSE:To make it possible to obtain a vertical type magnetic flux coupling Josephson device with three-layer superconducting films by installing a groove around a ground plane under the device and isolating/insulating the plane in island shape and connecting a wiring with the both ends of the island-shaped ground plane over a junction lower part electrode and passing control input current by way of said wiring. CONSTITUTION:A groove 111 is installed around a ground plane under this device so that the plane may be isolated and insulated, thereby forming three long island-shaped parts 112, 113, and 114. Holes 115 and 116 of a first insulation layer are installed to both ends of the island-shaped ground plane portion where first wiring layers 105 and 106 are connected with both ends of the island-shaped ground plane part 112. First wiring layers 106 and 109 are connected with both ends of the island-shaped ground plane portion 113 while the first wiring layers 107 and 110 are connected with both ends of the island-shaped ground plane part 114. Then, the wiring is connected with an input signal line over the first wiring layer, thereby providing control input to a vertical type magnetic flux coupling Josephson device.