会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明专利
    • DEVICE FOR MEASURING DISTRIBUTION OF CHEMICAL SPECIES
    • JPS59230140A
    • 1984-12-24
    • JP10411783
    • 1983-06-13
    • HITACHI LTD
    • OSADA HISAJIROUEDAMURA TAKAO
    • G01N21/64
    • PURPOSE:To measure directly and quickly the three-dimensional concn. distribution of the specific chemical species in plasma with high sensitivity by exciting resonantly the chemical species in the plasma by laser light and measuring spectrally the fluorescence thereof with a prescribed optical system. CONSTITUTION:Light 2 of the resonance wavelength of the specific chemical species in plasma of a device 1 utilizing plasma is emitted from a dye laser generating mechanism 3 and scans the plasma with a movable mirror 5 and a parabolic mirror 6 driven by a control mechanism 11. The flurescence generated from a measuring point 8 is condensed onto an optical fiber 17 provided to a scanning mechanism 6 for photodetection by a condenser lens 5 and is detected via a spectral mechanism 18 by a photoelectric converting mechanism 19. The output voltage thereof is fed to the mechanism 11. The mechanism 11 displays the information on the position of the point 8 together with said voltage value on a display mechanism 20. The three-dimensional concn. distribution of the specific chemical species in the plasma is thus directly and quickly measured with high sensitivity.
    • 33. 发明专利
    • PLASMA MONITOR
    • JPS586450A
    • 1983-01-14
    • JP10436781
    • 1981-07-06
    • HITACHI LTD
    • EDAMURA TAKAOOSADA HISAJIROU
    • G01N21/64G01N21/63H05H1/00
    • PURPOSE:To grasp a plasma state in high sensitivity and accuracy, by irradiating a laser beam to gas in the plasma state and detecting its exciting luminescence. CONSTITUTION:A wavelength variable laser generating apparatus 1 is provided on a fixing stand 23 movable in parallel to the surface of this paper. A laser beam 2 from the apparatus 1 is made incident to a plasma generating apparatus 3 and a gas 6 in a plasma state is excited by irradiation. Excited light is emitted linearly at the position corresponding to a laser beam passage 2 and this beam 7 is taken out from a window for photodetecting 5 and then, is turned into the narrow width beam 7 passing through a slit 8. This beam 7 is made incident to a rotating paraboloid mirror 12 and is reflected toward its focus and then, is focused on a slit of a spectroscope 14. The beam 7 made incident to the spectroscope 14 is separated into its spectral components and is detected by a photodetector 15.
    • 35. 发明专利
    • SIO2 FILM THICKNESS MEASURING APPARATUS
    • JPS5486367A
    • 1979-07-09
    • JP15364777
    • 1977-12-22
    • HITACHI LTD
    • EDAMURA TAKAOWATANABE MASAHIROHIRATSUKA YUTAKA
    • G01B15/02G01N23/225
    • PURPOSE:To enable the thickness of SiO2 thin films in minute regions to be rapidly and readily measured by making use of the changes in the intensity ratios of characteristic X-rays between SiKalpha3 and SiKalpha4 caused by the film thicknesses of the SiO2 films. CONSTITUTION:An electron ray 1 is converged by an electron lens 2 and is scanned over the surface of the sample 4 which is mounted on a sample holder 6 and is placed on a sample drive unit 5, by a deflecting coil 3. The SiKalpha3 spectrum out of the characteristic X-rays respectively radiated from the SiO2 thin film and Si underlayer are separated by spectral crystals 7, 8. At this time, the combinations of the crystal 8 and detector 10, the crystal 7 and detecror 11 are moved on the circumference of a Rowland circle 9 by interlocking mechanisms 14, 15, whereby the peak positions of the SiKalpha3 spectrum and SiKalpha4 spectrum are obtained. The intensities of both spectra are measured with the detectors 10, 11 and the results of measurement are inputted to an arithmetic circuit 12. The SiO2 film thickness is then displayed in a display circuit 13.