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31. 发明专利

JPH06186729A FORMATION OF PATTERN 失效
公开(公告)号：JPH06186729A
公开(公告)日：1994-07-08
申请号：JP34026892
申请日：1992-12-21
申请人： HITACHI LTD
发明人： KONO TOSHIHIKO , KAWASAKI KATSUHIRO , MATSUZAKA TAKASHI , OTA HIROYA
IPC分类号： G03F1/26 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE:To suppress the mis-registration between light shielding film patterns and phase shift patterns occurring in the difference in the measured value of the flatness of a phase shift mask substrate at the time of plotting the light shielding film patterns and at the time of plotting the phase shift patterns. CONSTITUTION:The flatness of the phase shift mask substrate is measured by a Z correcting part 17 at the time of transferring the light shielding film patterns to the first resist film on the phase shift mask substrate M. The flatness condition obtd. by the measurement is decided as the flatness condition at the time of transferring the phase shift patterns to the second resist film on the phase shift mask substrate. The deflection quantity, etc., at the time of plotting the phase shift patterns are corrected in accordance therewith.

32. 发明专利

JPH0661133A ELECTRON BEAM LITHOGRAPHING DEVICE 失效
公开(公告)号：JPH0661133A
公开(公告)日：1994-03-04
申请号：JP21441392
申请日：1992-08-12
申请人： HITACHI LTD
发明人： KONO TOSHIHIKO , KAWASAKI KATSUHIRO , MATSUZAKA TAKASHI , OTA HIROYA
IPC分类号： G03F7/20 , H01L21/027
摘要： PURPOSE:To make the improvement of lithographing precision and the increase in yield of pattern formation feasible using the electron beam lithographing device. CONSTITUTION:Within the electron beam lithographing device wherein the surface of a semiconductor wafer as a specimen 1 is irradiated with electron beams to draw a photo-shielding pattern using a lithographing mechanism comprising an electron gun 4, the first molding diaphragm 5, the first molding lens 6, a molding deflector 7, the second molding lens 8, the second molding diaphragm 9, a contraction lens 10, a blanking electrode 11 and a deflector 12, a detecting light source 2 and a sensor 3 for measuring the shape of the specimen 1 are arranged on the rear surface side of the specimen 1.

33. 发明专利

JPH0613299A ELECTRON BEAM LITHOGRAPHY METHOD AND ITS LITHOGRAPHY EQUIPMENT 失效
公开(公告)号：JPH0613299A
公开(公告)日：1994-01-21
申请号：JP16722692
申请日：1992-06-25
申请人： HITACHI LTD
发明人： OTA HIROYA , MATSUZAKA TAKASHI , KONO TOSHIHIKO , KAWASAKI SHIYOUKATSU
IPC分类号： G03F7/20 , G21K5/04 , H01J37/20 , H01J37/305 , H01L21/027
摘要： PURPOSE:To make image drawing with high precision possible, by calculating the specimen deviation amount, on the basis of the temperature change amount of a sample stage from the starting time of image drawing and the thermal expansion coefficient of the material quality of the sample stage, and correcting the irradiation position of an electron beam. CONSTITUTION:An electron beam 102 outputted from an electron gun 101 is converged by an electron lens 103, deflected by a deflector 104, and forms a pattern on a specimen 105. As to the outside of the deflection region of the deflector 104, image drawing is performed by moving a sample stage 106 with a driving system 109. At this time, the position of the sample stage 106 is measured by a laser interference length measuring machine 108, and fed back to the deflector 104 through a control computer 110. The temperature of the sample stage is measured by a temperature sensor 107, and similarly inputted in the control computer 110. Thereby the position error of a specimen caused by the temperature change of the sample stage is corrected and image drawing with high precision is possible.

34. 发明专利

JPH05158218A MASK SUBSTRATE AND PLOTTING METHOD 失效
公开(公告)号：JPH05158218A
公开(公告)日：1993-06-25
申请号：JP32552391
申请日：1991-12-10
申请人： HITACHI LTD
发明人： MATSUZAKA TAKASHI , KAWASAKI KATSUHIRO , KONO TOSHIHIKO , OTA HIROYA , HOKOTANI YOSHIO , HOUGEN MORIHISA
IPC分类号： G03F1/30 , G03F1/42 , G03F1/68 , G03F7/20 , H01L21/027
摘要： PURPOSE:To work a high-quality phase shift mask with high accuracy by previously forming marks for electron beams on a mask substrate and detecting these marks prior to plotting. CONSTITUTION:A light shielding film is formed on the surface of the mask substrate 3 formed of a transparent material. A mask pattern plotting region 8 for plotting mask patterns is previously assumed on the mask substrate 3 and the marks 1, 2 for the electron beams are formed in the periphery thereof by previously determining the respective positions. The position coordinates (x11, y11), (x21, y21) of the marks 1, 2 on the sample stage of an electron beam exposing device inclusive of the loading error to the device of this time are, therefor detected if the mask substrate 3 is loaded into the electron beam exposing device and the mark detection is executed in accordance with the position information of the marks 1, 2. Then, the rotating quantity theta with the plotting coordinate system and the start point of plotting are detected from theta=Arctan ((Y21-Y11)/(X21-X11)) if the marks are previously formed at the plural points.

35. 发明专利

JPH0547645A ELECTRON BEAM PLOTTING APPARATUS 失效
公开(公告)号：JPH0547645A
公开(公告)日：1993-02-26
申请号：JP20913891
申请日：1991-08-21
申请人： HITACHI LTD
发明人： MATSUOKA GENYA , KANETOMO MASABUMI , MATSUZAKA TAKASHI , OTA HIROYA
IPC分类号： H01L21/027
摘要： PURPOSE:To eliminate vibration of a lens barrel during plotting and to accurately plot by independently securing the barrel and a sample chamber to a surface plate, and flexibly securing between the barrel and the chamber as required. CONSTITUTION:A lens barrel formed of an electron gun 101 and electronic lenses 102, 103 is secured to a surface plate 109 through a trestle 202, and a sample chamber 201 is independently secured to the plate 109. Further, the chamber 201 is coupled to the trestle 202 by bellows 204. Vibration from a base 105 is shielded by the bellows 204, and not transmitted to the barrel. Since transmission of mechanical vibration due to a drive motor, etc., to the barrel can be prevented, an accurate plotting can be realized.

36. 发明专利

JPH0521324A PATTERN FORMATION AND DRAWING DEVICE 失效
公开(公告)号：JPH0521324A
公开(公告)日：1993-01-29
申请号：JP17094591
申请日：1991-07-11
申请人： HITACHI LTD
发明人： KONO TOSHIHIKO , KAWASAKI KATSUHIRO , MATSUZAKA TAKASHI , OTA HIROYA
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027
摘要： PURPOSE:To improve accuracy and yield in a pattern formation method and to improve accuracy in a drawing device. CONSTITUTION:A first layer 53 having a first pattern in a sample 17 is formed. When a second layer 55 having a second pattern is formed using the first layer 53 as a standard, formation conditions of the first layer 53 and formation conditions of the second layer 55 are made the same or approximate. Thereby, it is possible to reduce accuracy deterioration due to a difference of conditions in first and second pattern formations.

37. 发明专利

JPH04345013A ELECTRON BEAM DRAWING SYSTEM 失效
公开(公告)号：JPH04345013A
公开(公告)日：1992-12-01
申请号：JP11740891
申请日：1991-05-22
申请人： HITACHI LTD
发明人： KAWASAKI KATSUJI , MATSUZAKA TAKASHI , OTA HIROYA , KONO TOSHIHIKO
IPC分类号： H01L21/027 , G03F7/20
摘要： PURPOSE:To provide the title electron beam drawing system capable of minimizing the field connection errors due to the static characteristics of a stage in the same shifting directions of the moving stage both during the shifting time between fields and after the correction of the drifted beam for the electron beam drawing of high precision reticule. CONSTITUTION:A reference mark 17 is arranged at the corner of an X-Y coordinate system so as to start the electron beam drawing from the field 13 nearest to the reference mark 17 for successively continuing the electron beam drawing in the order of the fields nearer to the reference mark 17. In order to correct the drifted beam, a stage 12, after once shifting to the position of the reference mark 17, is shifted again halfway to the field beam drawing position but at this time, the stage shifting direction is equalized with the interfield stage shifting direction. Through these procedures, the title electron beam drawing system can be composed.

38. 发明专利

JPH04304617A SAMPLE FEEDER FOR CHARGED PARTICLE BEAM DEVICE, ETC. 失效
公开(公告)号：JPH04304617A
公开(公告)日：1992-10-28
申请号：JP6822191
申请日：1991-04-01
申请人： HITACHI LTD
发明人： MATSUZAKA TAKASHI , OTA HIROYA , KONO TOSHIHIKO , KAWASAKI KATSUHIRO
IPC分类号： H01J37/16 , H01L21/027
摘要： PURPOSE:To prevent evacuated gas from taking away heat from the inwall of a preliminary evacuation chamber and a sample charged in a sample exchange mechanism due to adiabatic expansion, and lowering the temperature of the sample. CONSTITUTION:To reduce the temperature drop of a sample 5 caused during evacuation by the adiabatic expansion of evacuated gas, a variable flowrate valve 8 is added to the prestage of a roughing vacuum pump 7, and the pumping speed at the initial stage is controlled by means of a controller 6 so that the gas may be evacuated not in an adiabatic manner, whereby the temperature change of the sample 5 is prevented. Furthermore to elevate the effect, when leaking the vacuum, gas smaller in specific heat at constant volume than the gas is used in place of dry air or dry nitrogen generally used. In a charged particle beam device which requires strict temperature control of the sample, temperature change of the sample placed in a preliminary evacuation chamber can be prevented, and highly accurate processing and observation can be materialized.

39. 发明专利

JPH01283929A APERTURE FOR FORMING ARBITRARY FIGURE 失效
公开(公告)号：JPH01283929A
公开(公告)日：1989-11-15
申请号：JP11241988
申请日：1988-05-11
申请人： HITACHI LTD
发明人： MATSUZAKA TAKASHI , SAITO NORIO , OKUMURA MASAHIDE
IPC分类号： H01J37/09 , H01L21/027 , H01L21/30
摘要： PURPOSE:To prevent the increase in blurred part of a beam due to a coulomb effect, by determining the area of an opening part having an arbitrary shape so that the area is equal to or larger than the maximum area of a rectangular opening part in order to form a variable rectangular beam. CONSTITUTION:The cross sectional area of a variable rectangular beam which is used for adjusting an electrooptical system is determined beforehand. Apertures for forming arbitrary figures are formed so that the cross sectional area 4 of the rectangular beam becomes equal to the cross sectional area of an electron beam through openings 2' and 2'' having the arbitrary shapes. Even if the image of the opening having a very complicated shape is projected, an electron beam current I is not changed. Therefore, the blurred part of the beam due to a coulomb effect can be disregarded. Thus, it is not required to readjust the electrooptical system even if the electron beam having the arbitrary shape is projected. Complication of the constitution of the apparatus can be prevented.

40. 发明专利

JPH01187819A DEFLECTION DISTORTION CORRECTOR FOR ELECTRON BEAM LITHOGRAPHY APPARATUS 失效
公开(公告)号：JPH01187819A
公开(公告)日：1989-07-27
申请号：JP1072988
申请日：1988-01-22
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： OKUMURA MASAHIDE , SAITO NORIO , MATSUZAKA TAKASHI , IWATATE KAZUMI
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To form a pattern having high accuracy and beauty by supplying a voltage to cancel a nonorthogonality to a deflection plate, i.e., crosstalking the output of one D/A converter to the other D/A converter. CONSTITUTION:Since DELTAl generated by nonorthogonality is generated in an upper right side, it is necessary to subtract with respect to X-axis 8 bits D/A in this case. Thus, the output of Y-axis D/A is divided by a resistor R, and connected to the opposite side of an X-ray deflection plate. With the above construction, the resistor R is so regulated as to eliminate DELTAl. If the DELTAl is inclined toward its upper left side, it is necessary to add the output of a variable resistor R to the output of the X-axis D/A converter. In this case, a resistor is inserted in series with the output of an X-axis 8-bit D/A converter, and the output of the resistor R may be added to a resistance. In this case, it is added by analog, but similar effects can be also obtained by digitally adding or subtracting at the input side of the 8-bit D/A converter.

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