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31. 发明专利

JPS6358982A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS6358982A
公开(公告)日：1988-03-14
申请号：JP20437286
申请日：1986-08-29
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO , KIHARA KATSUHIRO
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042
摘要： PURPOSE:To take out an interference light as a frequency variation monitor and facilitate keeping an oscillation frequency by a method wherein an optical waveguide which has a branching region in the middle to provide two light paths with different path lengths is coupled with a semiconductor laser device of a distributed feedback (DFB) type or a distributed reflection (DBR) type. CONSTITUTION:For instance, an N-type InP cladding layer 2 is formed by epitaxial growth on an N-type InP semiconductor substrate 1 and then an InGaAsP guide layer 4 and an InGaAsP active layer 5 are successively grown. The semiconductor substrate of a zone B is selectively etched as deep as the InP cladding layer 2 and an InGaAsP guide layer 8 is grown and further an N-type InP cladding layer 9 is grown on it. In the zone B where the guide layer 8 is grown, an optical waveguide 11a which starts from a DFB laser device 10 and reaches a photodetector 12a with two-way branching part in the middle and an optical waveguide 11b which starts from the DFB laser device 10 and reaches a photodetector 11b are provided. A required light output is taken out from the end surface of the laser device 10 side and, in addition to taking out a light intensity monitor output from the optical waveguide 11b, an interference light produced by the light path length difference is taken out from the optical waveguide 11a as a frequency variation monitor.

32. 发明专利

JPS62199086A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS62199086A
公开(公告)日：1987-09-02
申请号：JP4240586
申请日：1986-02-26
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To output highly efficient high-power laser light, by forming a lightguide having one output end, which is coupled with an active layer with light, at the side surface of said active layer, thereby providing a laser structure. CONSTITUTION:On the entire surface of an n-InP substrate 8, an n-InP clad layer 9, a non-doped InGaAsP layer 10, a p-InP clad layer 12, and a p -InGaAsP contact layer 13 are epitaxially grown. Then, an SiO2 film 18 and the like are laminated as etching masks. Patterning is performed by an ordinary lithography method. The active layer and a lightguide layer 11 are made to remain in a mesa shape and the other parts thereof are etched away until reaching the n-InP layer 9. Then the mesa parts are embedded as high resistance layers 14 by using a non-doped InP layer or Fe doped InP layer. The SiO2 film 18 is once removed, and an insulating SiO2 film 15 is newly laminated. a window is opened at a laser active region part. An (n) electrode 16 and a (p) electrode 17 are formed. Thus the highly efficient, high power laser is obtained, and the required monitoring light can be secured.

33. 发明专利

JPH11202162A OPTICAL MODULE AND SEALING METHOD THEREFOR 失效
公开(公告)号：JPH11202162A
公开(公告)日：1999-07-30
申请号：JP209298
申请日：1998-01-08
申请人： FUJITSU LTD
发明人： TERADA KOJI , NOSAKA TAIZO , NAKAGAWA KOJI , TANAKA KAZUHIRO , MIURA KAZUNORI , YONEDA MASAHIRO , FUKUSHIMA AKIRA
IPC分类号： G02B6/122 , G02B6/42 , H01L21/56 , H01L23/29 , H01L23/31 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide an optical module low in cost and high in reliability by actualizing an easy sealing method for an optical element. SOLUTION: This optical module includes a substrate 4, an optical waveguide 10 which is formed on the substrate 3, and an optical element which is mounted on the substrate 4 so that it is optically coupled with an end part of the optical waveguide 10 and transduces light into electricity. Further, the optical module includes light-transmissive 1st resin covering at least the optical coupling part between the optical waveguide 10 and optical element and thermoplastic 2nd resin which seals the optical element airtightly by covering the optical element and its periphery from above the light-transmissive 1st resin.

34. 发明专利

JP2579559B2 失效
公开(公告)号：JP2579559B2
公开(公告)日：1997-02-05
申请号：JP1237391
申请日：1991-01-10
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO , WAKAO KYOHIDE , NOBUHARA HIROYUKI , FUJIMOTO NOBUHIRO , MUTSUKAWA HIROYUKI , KUROYANAGI TOMOJI
IPC分类号： G02F1/35 , G02F1/01

35. 发明专利

JPH08111554A SEMICONDUCTOR LASER CONTROL METHOD AND DEVICE THEREOF 失效
公开(公告)号：JPH08111554A
公开(公告)日：1996-04-30
申请号：JP24321194
申请日：1994-10-06
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO
IPC分类号： H01S5/042 , H01S5/068 , H01S3/096
摘要： PURPOSE: To obtain a current value approximate to a threshold value as much as possible even when the threshold value made a change by a method wherein the detected differential resistance value and the prescribed reference resistance value, which is set in advance, are compared based on the comparison signal, and a bias current is controlled in such a manner that the differential resistance value and the reference resistance value are made equal. CONSTITUTION: In a bias current controlling process, a bias current is controlled by a bias current controller 6 in such a manner that a differential resistance value Rd becomes equal to the reference value RF based on a comparison resistance value. Accordingly, the bias current is controlled in such a manner that the differential resistance value Rd is brought close to the value corresponding to its line of discontinuity or to the higher value of the value corresponding to its line of discontinuity. Consequently, the bias current becomes equal to the threshold value of a semiconductor laser 1 which makes a change corresponding to the change of operational environment, or becomes a value lower than the threshold current becomes the value corresponding to the oscillation delay time of the semiconductor layer 1 which is allowed in design.

36. 发明专利

JPH04273212A OPTICAL WAVELENGTH FILTER 失效
公开(公告)号：JPH04273212A
公开(公告)日：1992-09-29
申请号：JP3442291
申请日：1991-02-28
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO
IPC分类号： G02F1/025 , H01L31/14 , H01S5/00 , H01S5/042
摘要： PURPOSE:To provide the optical wavelength filter which has an optical amplification function and, the gain coefft. of which is not substantially changed by a change in the intensity of input light. CONSTITUTION:This optical wavelength filter is constituted so as to have an optical semiconductor device having an active layer 1 which includes a quantum well layer, an optical waveguide layer 3 which is disposed in parallel with the active layer and is formed of the semiconductor of a wider band gap and a diffraction grating 4 structure which is formed near the surface of the optical waveguide layer 3 surface and generates a resonance characteristic and an incident optical system 10 for supplying an input light signal 9 to the active layer of the optical semiconductor device and the optical waveguide layer 3.

37. 发明专利

JPH11211941A OPTICAL MODULE 失效
公开(公告)号：JPH11211941A
公开(公告)日：1999-08-06
申请号：JP1576398
申请日：1998-01-28
申请人： FUJITSU LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： NOSAKA TAIZO , TANAKA KAZUHIRO , MIURA KAZUNORI , SAWAE SHINYA , KIKUCHI EIJI , NAKAGAWA KOJI , SASAKI MASAMI , TABUCHI HARUHIKO , FUKUDA MITSUO , ICHIKAWA FUMIO , HANAWA FUMIAKI , ISHIBASHI SHIGEKI
IPC分类号： G02B6/42 , G02B6/122 , H01L33/12 , H01L33/56 , H01L33/62 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To attain the stable supply of an optical module with miniaturization, high reliability and price-down. SOLUTION: This optical module is provided with optical transmission lines 121 and 122 , first substrate 10 having optical elements 13 and 14 optically connected to one end of optical transmission lines 121 and 122 , box-shaped second substrate 20 for supporting the side of optical elements 1.3 and 14 together with the optical transmission lines 121 and 122 while defining the other end of the optical transmission lines 121 and 122 as outside, and resin flow stopping member 51 placed at the protruding position of the optical transmission lines 121 and 122 on the second substrate 20 over the optical transmission lines 121 and 122 , and the surface of the second substrate 20 is tightly covered and integrated with resin 42 while including the optical transmission lines 121 and 122 and the optical elements 13 and 14 on the first substrate 10. In this case, concerning the optical module, an interface part 51b of the flow stopping member 51 in contact with the resin 42 at a bridge part A is inclined to the other end side of the optical transmission lines 121 and 122 (the left side of a figure) rather than a surface vertical to the main side of the second substrate 20.

38. 发明专利

JPH11109149A WAVELENGTH DIVIDING MULTIPLE OPTICAL DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11109149A
公开(公告)日：1999-04-23
申请号：JP27273397
申请日：1997-10-06
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO , NAKAGAWA KOJI , YAMAZAKI YOSUKE , TABUCHI HARUHIKO
IPC分类号： G02B6/12 , G02B6/34 , G02B6/36 , G02B7/00
摘要： PROBLEM TO BE SOLVED: To provide a wavelength dividing multiple optical device in which the inserting process into the groove of a filter is facilitated. SOLUTION: This wavelength dividing multiple optical device comprises a clad layer 4 formed on a waveguide path base 2, a first optical waveguide path 6 buried in the clad layer 4, a second optical waveguide path 8 having one end connected to the middle part of the first waveguide path 6 and buried in the clad layer 4, and an insert groove 6 formed in the waveguide path base 2 and the clad layer 4 so as to cross the connecting part between the first and second optical waveguide paths 6, 8. This wavelength dividing multiple optical device further comprises first and second broad grooves 12, 14 formed in the clad layer 3 so as to include both side parts of the insert groove 6 and opened to both side surfaces of the clad layer 4, and a wavelength selecting filter inserted in to the insert groove 16.

39. 发明专利

JPH06152046A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH06152046A
公开(公告)日：1994-05-31
申请号：JP29407492
申请日：1992-11-02
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To reduce a threshold current by returning natural emission light projected wastefully to an active layer by simply changing a structure of a semiconductor laser device. CONSTITUTION:The title device is provided with a repetitive laminated multilayer film 23 composed of a combination of two kinds of semiconductor films having different refractive indexes inserted between a substrate 21 and an active layer 25 such as a combination of an InGaAsP film and an InP film and a p-side electrode 32 which covers a side of a mesa formed to cross at least the repetitive laminated multilayer film 23 from a front side through an insulating film 31 and functions as an optical reflection film consisting of a metal covering a top. An optical length of approximately 1/4 a wavelength at a short wavelength side of a laser oscillation wavelength is selected for the repetitive laminated multilayer film 23 and it functions as a high optical reflection film.

40. 发明专利

JPH05175586A SEMICONDUCTOR WAVELENGTH VARIABLE ELEMENT 失效
公开(公告)号：JPH05175586A
公开(公告)日：1993-07-13
申请号：JP34099391
申请日：1991-12-24
申请人： FUJITSU LTD
发明人： TANAKA KAZUHIRO
IPC分类号： H01S5/06
摘要： PURPOSE:To provide a semiconductor wavelength variable element in which a constant optical output is obtained when used as an oscillation wavelength variable laser even if an injection current of a wavelength tuning layer is varied and a threshold value current is not varied when used as a selective wavelength variable filter in the element to be used for an optical communication, etc. CONSTITUTION:A second active layer 10 is formed between a wavelength tuning layer 8 formed on a diffraction grating 12 of a semiconductor substrate 16 to match a wavelength and an upper wavelength tuning layer 6 of the layer 8. A common electrode layer 4 is formed on the layer 6, and an active layer 2 is formed on the layer 4. A clad layer 14 is formed on the layer 2.

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