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    • 35. 发明专利
    • SEMICONDUCTOR STORAGE DEVICE
    • JPH0784868A
    • 1995-03-31
    • JP22621993
    • 1993-09-10
    • FUJITSU LTD
    • OKAMOTO ITSUO
    • G06F12/06G11C11/401G11C11/407
    • PURPOSE:To save electric power by supplying no current to the memory cell selecting means of a block other than a block including an address to be accessed. CONSTITUTION:A memory cell part 1 has memory cells distributed by addresses. A memory cell selection part 2 is supplied with addresses and selects specific memory cells corresponding to the addresses of the memory cell part 1. A current control part 3 controls the operating current of the memory cell selection part 9. Then the block selection part 9 is supplied with addresses and selects on block including addresses supplied from plural blocks consisting of a specific number of addresses, and the current control part 3 is so controlled that current supply to the memory cell selection part 2 corresponding to the block other than the selected block is stopped. Therefore, the current control circuit 3 is controlled so that no current flows to the circuit corresponding to the block other than the block including the address to be accessed in the memory selection part 2.
    • 36. 发明专利
    • PULL-UP CIRCUIT
    • JPH06203565A
    • 1994-07-22
    • JP180193
    • 1993-01-08
    • FUJITSU LTD
    • OKAMOTO ITSUO
    • G11C11/41G11C11/417
    • PURPOSE:To improve the load characteristic of a pull-up circuit, to make the ampli-tude on a read-out exclusive bit line small and to stabilize the amplitude when a current limitting condition is added on an object to be pulled up in the pull-up circuit. CONSTITUTION:Transistors T1, T2 are connected in series between a power source line VDD and the object 14, the gate of the transistor T1 is connected to a point P being the series connection point of the transistor T1 and T2, the gate of the transistor T2 is connected to a referece power source VB1. Further, transistors T3, T4 are connected in series between the power source line VDD and an electric power feeding point X, the gate of the transistor T3 is connected to the power source VDD, the gate of the transistor T4 is connected to a reference power source VB2, a transitor T5 is connected between the electric power feeding point X and a second power source line VSS, the gate is connected to the power source line VSS.