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    • 33. 发明专利
    • THIN FILM SOLAR BATTERY AND MANUFACTURING METHOD THEREOF
    • JPH0595126A
    • 1993-04-16
    • JP25264091
    • 1991-10-01
    • FUJI ELECTRIC CO LTD
    • FUJIKAKE SHINJI
    • H01L31/04
    • PURPOSE:To reduce a light absorption loss through laminated cells and improve conversion efficiency in a thin film solar battery, by using given amorphous silicon oxide as a material for p and n layers, each located on the rear side, opposed to the light incident side, of every pin junction-structured i layer except a pin junction-structured layer at the most distant place from the light incident side. CONSTITUTION:A plurality of pin junction structures mainly made of amorphous silicon oxide are deposited. In this case, amorphous silicon oxide, a-Si(1-x)Ox, where x is less than 0.2, is used as a material for p and n layers 5 and 6, each located on the rear side, opposed to the light incident side, of each pin junction- structured i layer except a pin junction-structured layer at the most distant place from the light incident side. Moreover, the amorphous silicon oxide is formed in a chemical decomposition step, such as a glow discharging decomposition step with the use of a mixed gas of monosilane, carbon dioxide, hydrogen, and doping impurities.
    • 34. 发明专利
    • THIN FILM SOLAR CELL
    • JPH02237080A
    • 1990-09-19
    • JP5751489
    • 1989-03-09
    • FUJI ELECTRIC CO LTD
    • FUJIKAKE SHINJI
    • H01L31/04
    • PURPOSE:To enable the formation of a solar cell of series connection structure only in a single process of patterning by a method wherein a connection section sandwiched between all-layer isolating grooves is provided facing to an adjacent cell, and a shortcircuit section is provided to a part of the connection section on an adjacent cell side where a back electrode layer is separated from a primary part by an isolating groove. CONSTITUTION:A transparent electrode layer, an a-Si layer, and a back electrode layer are laminated on a glass substrate 1, isolating grooves 71 are formed through irradiation with laser rays to pattern transparent electrodes 21, 22,..., a-Si layers 31, 32,..., and back electrodes 41, 42,.... Then, a short isolating groove 72 vertical to the isolating groove 71 is provided to both the ends of the groove 71 respectively through patterning by irradiation with laser rays penetrating all the layers, and a connection section 6 is provided to a part sandwiching between the isolating grooves 72. An isolating groove 8 is provided only to the back electrode layer through patterning in parallel with the groove 71, all the layers between the isolating groove 71 and the isolating groove 8 are fused and alloyed by irradiation with laser rays to be made lao in resistance to form a shortcircuit section 9. By this setup, a time required for all patterning processes can be shortened and the whole processes can be automated.