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31. 发明专利

JPH11253848A COATER 失效
公开(公告)号：JPH11253848A
公开(公告)日：1999-09-21
申请号：JP5665998
申请日：1998-03-09
申请人： DENSO CORP
发明人： SUZUKI MASAHIRO
IPC分类号： B05B15/04 , B05B13/02
摘要： PROBLEM TO BE SOLVED: To prevent a masking jig from being coated and to prevent the generation of burrs and further to recover the paint depositing on the jig. SOLUTION: A hand part 14 is provided at the tip 13 of the arm of the robot 11 of this coater, the region of a work 16 to be masked is chucked by the hand part 14, and the work is set in a masking jig 18. Subsequently, while the region of the work 16 to be masked is chucked, the jig 18 is chucked by the hand 14, powder coating is applied, and then the work 16 is taken out of the jig 18 placed on its base 24, transferred to a baking jig 26 placed on a base 25 and backed. Meanwhile, air is blown against the masking jig 18, and the paint depositing on the jig 18 is recovered and recycled.

32. 发明专利

JPH11204737A INTEGRATED CIRCUIT PROTECTING APPARATUS 失效
公开(公告)号：JPH11204737A
公开(公告)日：1999-07-30
申请号：JP774298
申请日：1998-01-19
申请人： DENSO CORP
发明人： SUZUKI MASAHIRO , SHIOTANI TAKESHI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/088 , H03K19/003
摘要： PROBLEM TO BE SOLVED: To constitute an integrated circuit protecting apparatus capable of protecting a semiconductor integrated circuit with a possibly small circuit area, even when a voltage exceeding a prescribed range of the positive or negative polarity is applied to the semiconductor integrated circuit. SOLUTION: In a p-type semiconductor substrate 11, current control elements 26, 42 at the power source and ground which have a bidirectional thyristor structure are formed. When EDS is applied to an output pad 53, and the output pad 53 is connected to a ground Vss according to the working condition of inner elements 49, 50, SCR structures 24, 25 of the current control elements 26 turn on in a terminal T1-T2 direction and terminal T2-T1 direction respectively, according to the voltage polarity of ESD to protect inner elements 49. When the output pad 53 is connected to the power source Vdd, SCR structures 40, 41 of the current control elements 42 turn on in the terminal T1-T2 direction and the terminal T2-T1 direction respectively to protect the inner elements 50.

33. 发明专利

JP2010225615A SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME 审中-公开
公开(公告)号：JP2010225615A
公开(公告)日：2010-10-07
申请号：JP2009067930
申请日：2009-03-19
申请人： DENSO CORP
发明人： SUZUKI MASAHIRO , OKUNO HIDEKAZU , YAMAMOTO KENSAKU , YAMAMOTO TOSHIMASA , MATSUKI HIDEO , MIYAHARA SHINICHIRO
IPC分类号： H01L27/04 , H01L21/336 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To achieve simplification of a manufacturing process in a SiC semiconductor device in which a MOSFET and an SBD are formed on the same substrate. SOLUTION: A recess for constituting a mesa structure 14 in an outer-peripheral region and a contact trench 21 for an SBD 20 are formed in the same step. This enables simultaneous performance of a part of the forming step of the SBD 20 and a forming step of the other parts, thereby eliminating the step required only for forming the SBD 20. Accordingly, the manufacturing process is simplified in an SiC semiconductor device in which a MOSFET and the SBD 20 are formed on the same substrate. COPYRIGHT: (C)2011,JPO&INPIT

34. 发明专利

JP2001210838A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001210838A
公开(公告)日：2001-08-03
申请号：JP2000024783
申请日：2000-01-28
申请人： DENSO CORP
发明人： SUZUKI MASAHIRO , SAKAKIBARA JUN , MORISHITA TOSHIYUKI
IPC分类号： H01L29/80 , H01L21/331 , H01L29/73 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can be reduced in loss by suppressing a gate-source current. SOLUTION: This semiconductor device is constituted in such a way that a trench 9 is dug into an n--type layer 5 from the surface of the layer 5 between a p+-type gate layer 7 and 8 p--type layer 6 and an n+-type source layer 8 and filled with an insulating film 10. When the film 10 is arranged in such a way, the gate layer 7 and p-type layer 6 can be insulated and separated from the source layer 8. Consequently, the flow of the gate-source current can be suppressed, because the hole which is supplied from the gate layer 7 when this semiconductor device is actuated can be prevented from directly flowing to a source S1 through the source layer 8. Therefore, the power consumption between the gate and source can be reduced and a low-loss semiconductor device can be obtained.

35. 发明专利

JPH10294425A INTEGRATED CIRCUIT PROTECTIVE DEVICE 失效
公开(公告)号：JPH10294425A
公开(公告)日：1998-11-04
申请号：JP9998697
申请日：1997-04-17
申请人： DENSO CORP
发明人： MATSUOKA TOSHIHIKO , SHIOTANI TAKESHI , SUZUKI MASAHIRO
IPC分类号： H01L27/04 , H01L21/822
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit protective device which can lower the voltage for operating a controlled rectifier element as a semiconductor integrated circuit protective element with the minimum circuit area. SOLUTION: SCRs(silicon-controlled rectifiers) 5 and 6 are incorporated in a protective device 1 connected to the input-output terminal 19 of an LSI (large scale integration) circuit 18 and the n-type layer 9 corresponding to the n-gate of the SCR 5 is connected to the power source 20 of the LSI circuit 18. The p-type layer 13 corresponding to the p-gate of the SCR 6 is connected to a grounding terminal through a resistor 21. When positive ESD(electrostatic discharge) is impressed upon the terminal 19 and the potential at the ESD is higher than the sum of the voltage at the power source 20 and the forward voltage at a p-n junction 22a, the SCR 5 conducts to discharge the ESD through the ground and, when negative ESD is impressed upon the terminal 19 and the potential at the ESD is negatively higher than the sum of the ground potential and the forward voltage at a p-n junction 25a, the SCR 6 conducts to discharge the ESD through the ground.

36. 发明专利

JP2002299617A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002299617A
公开(公告)日：2002-10-11
申请号：JP2001097174
申请日：2001-03-29
申请人： DENSO CORP
发明人： SUZUKI MASAHIRO
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device allowing equal current to flow through the upper part of a channel and the lower part of the channel in the semiconductor device having a channel the width of which is set to be in the depth direction of a substrate for making current flow in a direction parallel to the main surface of the substrate. SOLUTION: By using an n type substrate 1 having a main surface 1a and a backside 1b to be a surface opposite to the main surface 1a, a recess is formed from the side of the main surface 1a of the n type substrate 1. After that, a drift area 1c, a p type base region 2 and an n type source region 3 are embedded by using an epitaxial growth technique, power MOSFET is constituted. The impurity concentration of the respective regions and the regions of source, drain regions are designed, set and manufactured so that a resistance value at the depth direction of the source-drain regions (the thickness direction of the substrate 1) may be equal substantially.

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